PD 9.1675B IRL3202S PRELIMINARY HEXFET(R) Power MOSFET l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS(on) = 0.016W G Description ID = 48A S These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. D 2 P ak Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS VGSM EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100s) Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 48 30 190 69 0.56 10 14 Units A W W/C V V 270 29 6.9 5.0 -55 to + 150 mJ A mJ V/ns C 300 (1.6mm from case ) Thermal Resistance Parameter RqJC RqJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max. Units --- --- 1.8 40 C/W 11/18/97 IRL3202S Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current Min. 20 --- --- --- 0.70 28 --- --- --- --- --- --- --- --- --- --- --- Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LS Internal Source Inductance --- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- IGSS Typ. --- 0.029 --- --- --- --- --- --- --- --- --- --- --- 9.8 100 63 82 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.019 VGS = 4.5V, ID = 29A W 0.016 VGS = 7.0V, ID = 29A --- V VDS = VGS, ID = 250A --- S VDS = 16V, ID = 29A 25 VDS = 20V, VGS = 0V A 250 VDS = 10V, VGS = 0V, TJ = 150C 100 VGS = 10V nA -100 VGS = -10V 43 ID = 29A 12 nC VDS = 16V 13 VGS = 4.5V, See Fig. 6 --- VDD = 10V --- ID = 29A ns --- RG = 9.5W, VGS = 4.5V --- RD = 0.3W, Between lead, nH 7.5 --- and center of die contact 2000 --- VGS = 0V 800 --- pF VDS = 15V 290 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM V SD t rr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 48 --- --- showing the A G integral reverse --- --- 190 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 29A, VGS = 0V --- 68 100 ns TJ = 25C, IF = 29A --- 130 190 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.64mH RG = 25W , IAS = 29A. ISD 29A, di/dt 63A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. Uses IRL3202 data and test conditions ** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994. IRL3202S 1000 1000 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V BOTTOM 2.00V BOTTOM 1.75V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 10 2.0V 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 10 100 R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 TJ = 25 C 100 TJ = 150 C 10 V DS = 15V 20s PULSE WIDTH 3 4 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 1 10 100 Fig 2. Typical Output Characteristics 1000 2 20s PULSE WIDTH TJ = 150 C VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 2.0V 1 0.1 VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V BOTTOM 2.00V BOTTOM 1.75V TOP TOP 5 ID = 48A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( C) Fig 4. Normalized On-Resistance Vs. Temperature IRL3202S VGS = Ciss = Crss = Coss = C, Capacitance (pF) 3000 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 2500 Ciss 2000 1500 Coss 1000 Crss 500 15 VGS , Gate-to-Source Voltage (V) 3500 VDS = 16V 12 9 6 3 0 1 10 ID = 29A 0 100 0 10 VDS , Drain-to-Source Voltage (V) 30 40 50 60 70 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) 20 QG , Total Gate Charge (nC) 100 100 TJ = 150 C TJ = 25 C 10 1 0.2 100us 1ms 10 10ms TC = 25 C TJ = 150 C Single Pulse V GS = 0 V 0.8 1.4 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 2.6 1 1 10 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 100 IRL3202S 600 EAS , Single Pulse Avalanche Energy (mJ) 50 I D , Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature ( C) TOP 500 BOTTOM ID 13A 18A 29A 400 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 0.01 0.00001 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1 0.018 RDS(on), Drain-to-Source On Resistance ( W ) R DS (on) , Drain-to-Source On Resistance(W) IRL3202S VGS = 4.5V 0.016 0.014 VGS = 7.0V 0.012 0.010 0.025 0.020 ID = 48A 0.015 0.010 0 10 20 30 40 50 I D , Drain Current (A) Fig 12. On-Resistance Vs. Drain Current 60 A 0.0 2.0 4.0 6.0 V G S , Gate-to-Source V oltage (V ) Fig 13. On-Resistance Vs. Gate Voltage 8.0 IRL3202S D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A- 1.32 (.052) 1.22 (.048) 2 1.78 (.070) 1.27 (.050) 1 10.16 (.400) REF. -B- 4.69 (.185) 4.20 (.165) 6.47 (.255) 6.18 (.243) 3 15.49 (.610) 14.73 (.580) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 5.28 (.208) 4.78 (.188) 3X 1.40 (.055) 1.14 (.045) 5.08 (.200 ) 0.55 (.022) 0.46 (.018) 0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M 8.89 (.350) REF. 1 .39 (.055) 1 .14 (.045) B A M M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.4 50) N O TE S : 1 D IM E N S IO N S A F T E R S O LD E R D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C H . 4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S . LE A D A S S IG N M E N TS 1 - G A TE 2 - D R A IN 3 - SOURCE 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X Part Marking Information D2Pak IN TE R N A T IO N A L R E C TIF IE R LOGO ASSEMBLY LOT CODE A PART NUMBER F530S 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK 2.54 (.100) 2X IRL3202S Tape & Reel Information D2Pak TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) F E E D D IR E C TIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) F E E D D IR E C T IO N 1 3.5 0 (.5 32 ) 1 2.8 0 (.5 04 ) 2 7.4 0 (1 .07 9) 2 3.9 0 (.9 41 ) 4 330.00 (14.173) M A X. N O TES : 1. C O M F O R M S T O E IA -41 8 . 2. C O N T R O L LIN G D IM E N S IO N : M ILL IM E T E R . 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E . 6 0.0 0 (2 .3 6 2) M IN . 26 .40 (1.039) 24 .40 (.961) 3 3 0.4 0 (1 .1 97 ) MAX. 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 11/97