2SA1016, 1016K / 2SC2362, 2362K
No.0572-1/5
Specifications ( ) : 2SA1016, 1016K
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions 2SA1016, 2SC2362 2SA1016K, 2SC2362K Unit
Collector-to-Base Voltage VCBO (--)120 (--)150 V
Collector-to-Emitter Voltage VCEO (--)100 (--)120 V
Emitter-to-Base Voltage VEBO (--)5 V
Collector Current IC(--)50 mA
Collector Current (Pulse) ICP (--)100 mA
Collector Dissipation PC400 mW
Junction Temperature Tj 125 °C
Storage Temperature Tstg --55 to +125 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=(--)80V, IE=0A (--)1.0 μA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)1.0 μA
DC Current Gain hFE VCE=(--)6V, IC=(--)1mA 160* 960*
Gain-Bandwidth Product fTVCE=(--)6V, IC=(--)1mA (110)130 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (2.2)1.8 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)10mA, IB=(--)1mA (--)0.5 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A [2SA1016, 2SC2362] (--)120 V
IC=(--)10μA, IE=0A [2SA1016K, 2SC2362K] (--)150 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ [2SA1016, 2SC2362] (--)100 V
IC=(--)1mA, RBE=∞ [2SA1016K, 2SC2362K] (--)120 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)5 V
Continued on next page.
* : The 2SA1016,1016K/2SC2362, 2362K are classified by 1mA hFE as follows :
Rank F G H
hFE 160 to 320 280 to 560 480 to 960
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN0572F
71608GA TI IM TC-00001502 / 70502TN (KT)/71598HA (KT)/3187AT/3075KI/1313KI
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guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
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'
s products or
equipment.
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SANYO Semiconductors
DATA SHEET
2SA1016, 1016K
2SC2362, 2362K
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Low-Noise Amp
Applications
2SA1016, 1016K / 2SC2362, 2362K
No.0572-2/5
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Noise Level VNO(ave)
VCC=30V, IC=1mA, Rg=56kΩ,VG=77dB/1kHz
35 mV
Noise Peak Level VNO(peak)
VCC=30V, IC=1mA, Rg=56kΩ,VG=77dB/1kHz
200 mV
Package Dimensions
unit : mm (typ)
7522-002
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
IC -- VCE
Collector Current, IC -- mA
ITR02951
0 --10 --20 --30 --40 --50
0
--4
--2
--6
--8
--10
--12
--100
μ
A
--50
μ
A
ITR02952
01020304050
0
4
2
6
8
10
12
IB=0
μ
A
--350
μ
A
--150
μ
A
--200
μ
A
--250
μ
A
--300
μ
A
2SA1016, 1016K
100
μ
A
50
μ
A
IB=0
μ
A
150
μ
A
200
μ
A
250
μ
A
2SC2362, 2362K
123
5.0
4.0 4.0
0.45
0.45 0.44
0.5
1.3
1.3
5.0
0.6
2.0
14.0
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
2SA1016, 1016K / 2SC2362, 2362K
No.0572-3/5
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Output Capacitance, Cob -- pF Gain-Bandwidth Product, fT -- MHz
fT -- IC
Collector Current, IC -- mA
DC Current Gain, hFE
hFE -- IC
Collector Current, IC -- mA
Collector Current, IC -- mA
DC Current Gain, hFE
hFE -- IC
Gain-Bandwidth Product, fT -- MHz
fT -- IC
Collector Current, IC -- mA
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Output Capacitance, Cob -- pF
ITR02959 ITR02960
1.0
--1.0 23 57
--10 23 5 2357
10 100
23 57
7
1.0
2
3
7
5
10
7
1.0
2
3
7
5
10
2SA1016, 1016K
f=1MHz 2SC2362, 2362K
f=1MHz
ITR02957 ITR02958
--0.1 235--1.0 235 --10 235--100 0.1 23 5 1.0 23 5 10 2235100
2
7
5
3
10
7
5
2
3
7
5
1000
100
2
3
10
7
5
2
3
7
5
1000
100
2SA1016, 1016K
VCE=--6V 2SC2362, 2362K
VCE=6V
ITR02955 ITR02956
1.0 5325732 10
5
3
2
3
2
100
7
5
37510
2352
1.0
5
5
3
2
3
2
100
7
2SA1016, 1016K
VCE=--6V 2SC2362, 2362K
VCE=6V
IB -- VBE IB -- VBE
Base-to-Emitter Voltage, VBE -- V
Base Current, IB -- μA
Base-to-Emitter Voltage, VBE -- V
Base Current, IB -- μA
ITR02953
0 --0.2 --0.4 --0.6 --0.8 --1.0 0.6 0.8 1.00.20 0.4
40
100
20
0
80
60
ITR02954
2SA1016, 1016K
VCE=--5V
0
--40
--20
--60
--80
--100
2SC2362, 2362K
VCE=5V
2SA1016, 1016K / 2SC2362, 2362K
No.0572-4/5
Signal Source Resistance, Rg -- Ω
Contour of NF
Collector Current, IC -- mA
Signal Source Resistance, Rg -- Ω
Contour of NF
Collector Current, IC -- μA
Signal Source Resistance, Rg -- Ω
Contour of NF
Collector Current, IC -- mA
Signal Source Resistance, Rg -- Ω
Contour of NF
Collector Current, IC -- mA
Signal Source Resistance, Rg -- Ω
Contour of NF
Collector Current, IC -- μA
ITR02967
--0.001 --0.01
23 5 --0.1
23 5 --1.0 --10
23 5 23 5
5
3
2
5
3
2
5
3
2
0.1k
1.0k
10k
100k
2SA1016, 1016K
f=10kHz
Δf=1Hz
VCE=--6V
NF=0.5
dB
4
dB
2
dB
15
dB
6
dB
8
dB
12dB
0.7
dB
1
dB
4dB
2
dB
15
dB
6dB
8
dB
12
dB
0.7
dB
1
dB
--0.001 --0.01
23 5 --0.1
23 5 --1.0 --10
235 23 5 35 10
235
1000
235
10000
235100
2
1.0
3
5
0.1
2
3
5
2
10
3
5
2
100
1.0
ITR02965 ITR02966
5
3
2
5
3
2
5
3
2
0.1k
1.0k
10k
100k
2SA1016, 1016K
f=1kHz
Δf=1Hz
VCE=--6V
4
dB
2dB
15
dB
6
dB
8dB
12
dB
0.7
dB
1
dB
4
dB
2
dB
15
dB
6dB
8dB
12
dB
0.7dB
1
dB
2SC2362, 2362K
f=1kHz
VCE=6V
NF=
1
dB
NF=
1dB
4dB
2
dB
6
dB
8dB
4
dB
2
dB
6
dB
8dB
14dB
12dB
--0.001 --0.01
23 5 --0.1
23 5 --1.0 --10
23 5 23 5
ITR02963 ITR02964
35 10
235
1000
235
10000
235100
2
1.0
3
5
0.1
2
3
5
2
10
3
5
2
100
1.0
5
3
2
5
3
2
5
3
2
0.1k
1.0k
10k
100k
4
dB
2dB
15
dB
6dB
8
dB
12
dB
2SA1016, 1016K
f=100Hz
Δf=1Hz
VCE=--6V
4
dB
2dB
1dB
1
dB
15
dB
6
dB
8
dB
12
dB
2SC2362, 2362K
VCE=6V
f=10Hz
NF=1
dB
4
dB
2
dB
14dB
6dB
8
dB
12dB
4
dB
2
dB
14
dB
6
dB
8
dB
12dB
NF=0.7dB
Signal Source Resistance, Rg -- Ω
Contour of NF
Collector Current, IC -- mA Ambient Temperature, Ta -- °C
PC -- Ta
ITR02961
--0.001 --0.01
23 5 --0.1
23 5 --1.0 --10
23 5 23 5 75 125100 15025050
200
500
100
0
400
300
ITR02962
2SA1016, 1016K
f=10Hz
Δf=1Hz
VCE=--6V
5
3
2
5
3
2
5
3
2
0.1k
1.0k
10k
100k
4
dB
2
dB
15
dB
6
dB
8
dB
12dB
NF=1dB
4
dB
2dB
15
dB
6
dB
8
dB
12
dB
2SA1016, 1016K
2SC2362, 2362K
Collector Dissipation, PC -- mW
2SA1016, 1016K / 2SC2362, 2362K
No.0572-5/5
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