FMMTA42 FMMTA43 FMMTA42 FMMTA43 SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 3 JANUARY 1996 PARTMARKING DETAIL FMMTA42 3E FMMTA43 1E FMMTA42R 7E FMMTA43R 5E 160 fT Transition Frequency (MHz) hFE Static Forward Current Transfer Ratio TYPICAL CHARACTERISTICS 140 120 VCE=10V 100 80 60 40 20 0.1 1.0 IC-Collector 10 100 140 VCE=20V 120 COMPLEMENTARY TYPES FMMTA42 FMMTA92 FMMTA43 FMMTA93 80 60 40 20 0 0.1 fT vs IC Single Pulse Test at Tamb=25C 10ms IC-Collector Current Amps VCE (sat) Collector-Emitter Saturation Voltage(Volts) 100 10 1.0 hFE vs IC 1A IC / IB=10 0.1 0 0.1 1.0 10 IC-Collector Current (mA) VCE(sat) vs IC 100 200 1ms 100ms 0.1 1 10 PARAMETER SYMBOL FMMTA42 FMMTA43 UNIT V Collector-Base Voltage VCBO 300 200 Collector-Emitter Voltage VCEO 300 200 Emitter-Base Voltage VEBO Continuous Collector Current IC 200 mA Power Dissipation at Tamb=25C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 C 5 V V ELECTRICAL CHARACTERISTICS (at Tamb = 25C). D.C. 0.01 0.001 SOT ABSOLUTE MAXIMUM RATINGS. IC-Collector Current (mA) Current (mA) 0.2 B 100 200 0.3 E C 100 1000 VCE-Collector-Emitter Voltage (Volts) Safe operating area PARAMETER SYMBOL MIN. MAX. Collector-Base Breakdown Voltage V(BR)CBO 300 Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-Off Current ICBO 0.1 Emitter Cut-Off Current IEBO 0.1 Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) MIN. UNIT CONDITIONS. 200 V IC=100A, IE=0 300 200 V IC=1mA, IB=0* 6 6 V IE=100A, IC=0 0.1 A A VCB=200V, IE=0 VCB=160V, IE=0 0.1 A A VEB=6V, IC=0 VEB=4V, IC=0 0.5 0.4 V IC=20mA, IB=2mA* 0.9 0.9 V IC=20mA, IB=2mA* Static Forward Current hFE Transfer Ratio 25 40 40 25 40 50 Transition Frequency fT 50 50 Output Capacitance Cobo 6 MAX. IC=1mA, VCE=10V* IC=10mA, VCE=10V* IC=30mA, VCE=10V* 200 8 MHz IC=10mA, VCE=20V f=20MHz pF VCB=20V, f=1MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% FMMTA42 FMMTA43 FMMTA42 FMMTA43 SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 3 JANUARY 1996 PARTMARKING DETAIL FMMTA42 3E FMMTA43 1E FMMTA42R 7E FMMTA43R 5E 160 fT Transition Frequency (MHz) hFE Static Forward Current Transfer Ratio TYPICAL CHARACTERISTICS 140 120 VCE=10V 100 80 60 40 20 0.1 1.0 IC-Collector 10 100 140 VCE=20V 120 COMPLEMENTARY TYPES FMMTA42 FMMTA92 FMMTA43 FMMTA93 80 60 40 20 0 0.1 fT vs IC Single Pulse Test at Tamb=25C 10ms IC-Collector Current Amps VCE (sat) Collector-Emitter Saturation Voltage(Volts) 100 10 1.0 hFE vs IC 1A IC / IB=10 0.1 0 0.1 1.0 10 IC-Collector Current (mA) VCE(sat) vs IC 100 200 1ms 100ms 0.1 1 10 PARAMETER SYMBOL FMMTA42 FMMTA43 UNIT V Collector-Base Voltage VCBO 300 200 Collector-Emitter Voltage VCEO 300 200 Emitter-Base Voltage VEBO Continuous Collector Current IC 200 mA Power Dissipation at Tamb=25C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 C 5 V V ELECTRICAL CHARACTERISTICS (at Tamb = 25C). D.C. 0.01 0.001 SOT ABSOLUTE MAXIMUM RATINGS. IC-Collector Current (mA) Current (mA) 0.2 B 100 200 0.3 E C 100 1000 VCE-Collector-Emitter Voltage (Volts) Safe operating area PARAMETER SYMBOL MIN. MAX. Collector-Base Breakdown Voltage V(BR)CBO 300 Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-Off Current ICBO 0.1 Emitter Cut-Off Current IEBO 0.1 Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) MIN. UNIT CONDITIONS. 200 V IC=100A, IE=0 300 200 V IC=1mA, IB=0* 6 6 V IE=100A, IC=0 0.1 A A VCB=200V, IE=0 VCB=160V, IE=0 0.1 A A VEB=6V, IC=0 VEB=4V, IC=0 0.5 0.4 V IC=20mA, IB=2mA* 0.9 0.9 V IC=20mA, IB=2mA* Static Forward Current hFE Transfer Ratio 25 40 40 25 40 50 Transition Frequency fT 50 50 Output Capacitance Cobo 6 MAX. IC=1mA, VCE=10V* IC=10mA, VCE=10V* IC=30mA, VCE=10V* 200 8 MHz IC=10mA, VCE=20V f=20MHz pF VCB=20V, f=1MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%