Mechanical Data
• Case: SOT-23 Molded Plastic
• Terminals: Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approx.)
• Device Marking: BC807-16 5A
BC807-25 5B
BC807-40 5C
BC807-16
BC807-25
BC807-40
PNP Silicon
General Purpose
Transistors
Features
• Capable of 0.3Watts of Power Dissipation.
• Collector-current 0.5A
• Collector-base Voltage 50V
• Operating and storage junction temperature range: -55OC to +150OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(I
C=10mAdc, IB=0)
45 --- Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(I
C=10uAdc, IE=0)
50 --- Vdc
V(BR)EBO Collector-Emitter Breakdown Voltage
(I
E=1.0uAdc, IC=0)
5.0 --- Vdc
ICBO Collector Cutoff Current
(VCB=45Vdc,I
E=0)
--- 0.1 uAdc
ICEO Collector Cutoff Current
(VCE=40V dc,IE=0)
--- 0.2 uAdc
IEBO Emitter Cutoff Current
(VEB=4.0Vdc, I
C=0)
--- 0.1 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain
(I
C=100mAdc, VCE=1.0Vdc)
BC807-16
BC807-25
BC807-40
100
160
250
250
400
600
---
---
---
hFE(2) DC Current Gain
(I
C=500mAdc, VCE=1.0Vdc)
40 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(I
C=500mAdc, IB=50mAdc)
--- 0.7 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(I
C=500mAdc,IB=50mAdc)
--- 1.2 Vdc
SMALL SIGNAL CHARACTERISTICS
fTCurrent-Gain-Bandwidth Product
(VCE=5.0V, f=100MHz, IC=10mA)
100 --- MHz
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .110 .120 2.80 3.04
B .083 .104 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
.079
2.000
inches
mm
.031
.800
.035
.900
.
03
7
.950
.037
.950
K
A
B
C
D
E
F
GH
J
SOT-23
Revision: B 2012/04/28
omponents
20736 Marilla Street Chatsworth
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MCC
3
TM
Micro Commercial Components
E
B
C
www.mccsemi.com
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• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
hFE, DC CURRENT GAIN
1000
10
-1000-0.1 -10 -100
100
-1.0
VCE = -1.0 V
TA = 25°C
IB, BASE CURRENT (mA)
Figure 2. Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS
)
V, VOLTAGE (VOLTS)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.01 -0.1 -10 -100-1.0
-1.0
-0.8
-0.6
-0.4
-0.2
0
-1.0 -10 -1000-100
TJ = 25°C
IC = -10 mA
IC = -100 mA
IC = -300 mA
IC =
-500 mA
TA = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = -1.0 V
VCE(sat) @ IC/IB = 10
Figure 4. Temperature Coefficients
+1.0
IC, COLLECTOR CURRENT
-1.0 -10 -100 -1000
-2.0
-1.0
0
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
θVC for VCE(sat)
θVB for VBE
MCC
BC807-16 thru BC807-40
Revision: B 2012/04/28
TM
Micro Commercial Components
www.mccsemi.com
2 of 3
MCC
Revision: B 2012/04/28
TM
Micro Commercial Components
www.mccsemi.com
3 of 3
3
Ordering Information :
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Device Packing
Part Number-TP
Tape&Reel;3Kpcs/Reel