BUH150/D - ON Semiconductor

Motorola Bipolar Power Transistor Device Data





 

  

   

The BUH150 has an application specific state–of–art die designed for use in

150 Watts Halogen electronic transformers.

This power transistor is specifically designed to sustain the large inrush current

during either the start–up conditions or under a short circuit across the load.

This High voltage/High speed product exhibits the following main features:

•Improved Efficiency Due to the Low Base Drive Requirements:

— High and Flat DC Current Gain hFE

— Fast Switching

•Robustness Thanks to the Technology Developed to Manufacture

this Device

•Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible

Parametric Distributions

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Value

ÎÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎ

400

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Breakdown Voltage

ÎÎÎÎÎ

VCBO

ÎÎÎÎÎÎ

700

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Breakdown Voltage

ÎÎÎÎÎ

VCES

ÎÎÎÎÎÎ

700

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEBO

ÎÎÎÎÎÎ

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak (1)

ÎÎÎÎÎ

ICM

ÎÎÎÎÎÎ

ÎÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

Base Current — Peak (1)

ÎÎÎÎÎ

IBM

ÎÎÎÎÎÎ

ÎÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*Total Device Dissipation @ TC = 25

*Derate above 25°C

ÎÎÎÎÎ

ÎÎÎÎÎÎ

150

1.2

ÎÎÎÎÎ

Watt

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Temperature

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎ

–65 to 150

ÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance

— Junction to Case

— Junction to Ambient

ÎÎÎÎÎ

RθJC

RθJA

ÎÎÎÎÎÎ

0.85

62.5

ÎÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering Purposes:

1/8″ from case for 5 seconds

ÎÎÎÎÎ

ÎÎÎÎÎÎ

260

ÎÎÎÎÎ

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “W orst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.



SEMICONDUCTOR TECHNICAL DATA Order this document

by BUH150/D

 Motorola, Inc. 1995



POWER TRANSISTOR

15 AMPERES

700 VOLTS

150 WATTS

CASE 221A–06

TO–220AB

BUH150

2 Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

(IC = 100 mA, L = 25 mH)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

400

ÎÎÎÎ

460

ÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Breakdown Voltage

(ICBO = 1 mA)

ÎÎÎÎ

VCBO

ÎÎÎÎ

700

ÎÎÎÎ

860

ÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Breakdown Voltage

(IEBO = 1 mA)

ÎÎÎÎ

VEBO

ÎÎÎÎ

12.3

ÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEO, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCES, VEB = 0)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ICES

ÎÎÎÎ

ÎÎÎ

100

1000

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Base Current

(VCB = Rated VCBO, VEB = 0)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ICBO

ÎÎÎÎ

ÎÎÎ

100

1000

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Cutoff Current

(VEB = 9 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 10 Adc, IB = 2 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

ÎÎÎ

1.25

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 2 Adc, IB = 0.4 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

0.16

0.15

ÎÎÎ

0.4

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 10 Adc, IB = 2 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

0.45

ÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 20 Adc, IB = 4 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 20 Adc, VCE = 5 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

hFE

ÎÎÎÎ

2.5

ÎÎÎÎ

4.5

ÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 10 Adc, VCE = 5 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 2 Adc, VCE = 1 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC SATURATION VOLTAGE

ÎÎÎÎÎÎÎÎ

Dynamic Saturation

Voltage:

Determined 3 µs after

rising IB1 reaches

90% of final IB1

(see Figure 19)

ÎÎÎÎÎÎÎÎ

C = 5 Adc, IB1 = 1 Adc

VCC = 300 V

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

VCE(dsat)

ÎÎÎÎ

1.5

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Voltage:

Determined 3 µs after

rising IB1 reaches

90% of final IB1

(see Figure 19)

ÎÎÎÎÎÎÎÎ

IC = 5 Adc, IB1 = 1 Adc

VCC = 300 V

ÎÎÎÎÎÎ

@ TC = 125°C

ÎÎÎÎ

2.8

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

µs after

rising IB1 reaches

90% of final IB1

(see Figure 19)

ÎÎÎÎÎÎÎÎ

C = 10 Adc, IB1 = 2 Adc

VCC = 300 V

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

2.4

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

90% of final IB1

(see Figure 19)

ÎÎÎÎÎÎÎÎ

IC = 10 Adc, IB1 = 2 Adc

VCC = 300 V

ÎÎÎÎÎÎ

@ TC = 125°C

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain Bandwidth

(IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz)

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

100

ÎÎÎ

150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Input Capacitance

(VEB = 8 Vdc, f = 1 MHz)

ÎÎÎÎ

Cib

ÎÎÎÎ

1300

ÎÎÎ

1750

ÎÎÎÎ

BUH150

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 µs)

ÎÎÎÎÎÎÎÎ

Turn–on Time

ÎÎÎÎÎÎÎÎ

IC = 2 Adc, IB1 = 0.2 Adc

IB2 = 0.2 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

ton

ÎÎÎÎ

200

ÎÎÎ

300

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

IC = 2 Adc, IB1 = 0.2 Adc

IB2 = 0.2 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

5.3

ÎÎÎ

6.5

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IB2 = 0.2 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

240

ÎÎÎ

350

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn–off Time

ÎÎÎÎÎÎÎÎ

CC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

toff

ÎÎÎÎ

5.6

ÎÎÎ

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Turn–on Time

ÎÎÎÎÎÎÎÎ

IC = 2 Adc, IB1 = 0.4 Adc

IB2 = 0.4 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

ton

ÎÎÎÎ

100

ÎÎÎ

200

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

IC = 2 Adc, IB1 = 0.4 Adc

IB2 = 0.4 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

6.1

ÎÎÎ

7.5

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IB2 = 0.4 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

320

ÎÎÎ

500

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn–off Time

ÎÎÎÎÎÎÎÎ

CC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

toff

ÎÎÎÎ

6.5

ÎÎÎ

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Turn–on Time

ÎÎÎÎÎÎÎÎ

IC = 5 Adc, IB1 = 0.5 Adc

IB2 = 0.5 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ton

ÎÎÎÎ

450

800

ÎÎÎ

650

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn–off Time

ÎÎÎÎÎÎÎÎ

IB2 = 0.5 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

toff

ÎÎÎÎ

2.5

3.9

ÎÎÎ

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Turn–on Time

ÎÎÎÎÎÎÎÎ

IC = 10 Adc, IB1 = 2 Adc

IB2 = 2 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ton

ÎÎÎÎ

500

900

ÎÎÎ

700

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn–off Time

ÎÎÎÎÎÎÎÎ

IB2 = 2 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

toff

ÎÎÎÎ

2.25

2.75

ÎÎÎ

2.75

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IC = 2 Adc

IB1 = 0.2 Adc

IB2 = 0.2 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tfi

ÎÎÎÎ

110

160

ÎÎÎ

250

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

IC = 2 Adc

IB1 = 0.2 Adc

IB2 = 0.2 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tsi

ÎÎÎÎ

6.5

ÎÎÎ

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎ

IB2 = 0.2 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

235

240

ÎÎÎ

350

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IC = 2 Adc

IB1 = 0.4 Adc

IB2 = 0.4 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tfi

ÎÎÎÎ

110

170

ÎÎÎ

250

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

IC = 2 Adc

IB1 = 0.4 Adc

IB2 = 0.4 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tsi

ÎÎÎÎ

7.8

ÎÎÎ

7.5

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎ

IB2 = 0.4 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

250

270

ÎÎÎ

350

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IC = 5 Adc

IB1 = 0.5 Adc

IB2 = 0.5 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tfi

ÎÎÎÎ

110

140

ÎÎÎ

150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

IC = 5 Adc

IB1 = 0.5 Adc

IB2 = 0.5 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tsi

ÎÎÎÎ

3.25

4.6

ÎÎÎ

3.75

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎ

IB2 = 0.5 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

275

450

ÎÎÎ

350

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IC = 10 Adc

IB1 = 2 Adc

IB2 = 2 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tfi

ÎÎÎÎ

110

160

ÎÎÎ

175

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

IC = 10 Adc

IB1 = 2 Adc

IB2 = 2 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tsi

ÎÎÎÎ

2.3

2.8

ÎÎÎ

2.75

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎ

IB2 = 2 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

250

475

ÎÎÎ

350

ÎÎÎÎ

BUH150

4 Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

Figure 1. DC Current Gain @ 1 Volt

100

11010.10.001 IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ = 125

TJ = 25

TJ = –20

VCE = 1 V

Figure 2. DC Current Gain @ 3 Volt

100

11010.10.001 IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ = 125

TJ = 25

TJ = –20

VCE = 3 V

0.01 0.01

Figure 3. DC Current Gain @ 5 Volt

100

110010.10.01 IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ = 125

TJ = 25

TJ = –20

VCE = 5 V

Figure 4. Collector–Emitter Saturation Voltage

0.01 10010.10.001 IC, COLLECTOR CURRENT (AMPS)

TJ = 125

TJ = 25

TJ = –20

IC/IB = 5

VCE, VOLTAGE (VOLTS)

0.1

Figure 5. Collector–Emitter Saturation Voltage

0.01 1010.10.001 IC, COLLECTOR CURRENT (AMPS)

TJ = 125

TJ = 25

VCE, VOLTAGE (VOLTS)

0.1

0.01

Figure 6. Base–Emitter Saturation Region

1.5

010010.010.001 IC, COLLECTOR CURRENT (AMPS)

VBE, VOLTAGE (VOLTS)

TJ = 125

TJ = 25

TJ = –20

IC/IB = 5

0.5

0.1

0.01 10

IC/IB = 10

100 100

100

BUH150

Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

Figure 7. Base–Emitter Saturation Region

1.5

0.5

010010.10.001 IC, COLLECTOR CURRENT (AMPS)

VBE, VOLTAGE (VOLTS)

TJ = 125

TJ = 25

TJ = –20

0.01

IC/IB = 10

Figure 8. Collector Saturation Region

010010.10.01 IB, BASE CURRENT (A)

VCE(sat)

(IC = 1 A)

VCE, VOLTAGE (VOLTS)

TJ = 25

8 A

5 A

1.5

0.5

20 A

15 A

Figure 9. Capacitance

10000

10 100101 VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

100

Cib (pF)

TJ = 25

f(test) = 1 MHz

1000

Figure 10. Resistive Breakdown

900

700

400 100010010 RBE (

Ω

)

BVCER (VOLTS)

TJ = 25

BVCER @ 10 mA

800

600

500

BVCER(sus) @ 200 mA

10 10

10 A

Cob (pF)

BUH150

6 Motorola Bipolar Power Transistor Device Data

t, TIME ( s)

TYPICAL SWITCHING CHARACTERISTICS

Figure 11. Resistive Switching, ton

2000

1000

01530 IC, COLLECTOR CURRENT (AMPS)

t, TIME (ns)

1400

800

IB1 = IB2

VCC = 300 V

PW = 40

Figure 12. Resistive Switch Time, toff

015100 IC, COLLECTOR CURRENT (AMPS)

Figure 13. Inductive Storage Time, tsi

01551 IC, COLLECTOR CURRENT (AMPS)

TJ = 125

TJ = 25

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200

1800

IC/IB = 5

Figure 14. Inductive Storage Time,

tc & tfi @ IC/IB = 5

550

50 1571 IC, COLLECTOR CURRENT (AMPS)

t, TIME (ns)

150

TJ = 125

TJ = 25

tfi

350

9 12

IC/IB = 10

IC/IB = 5

125

TJ = 25

TJ = 125

CIB1 = IB2

VCC = 300 V

PW = 20

IC/IB = 10

IC/IB = 5

t, TIME ( s)

Figure 13 Bis. Inductive Storage Time, tsi

01041 IC, COLLECTOR CURRENT (AMPS)

TJ = 125

TJ = 25

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200

t, TIME ( s)

IC/IB = 10

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200

Figure 15. Inductive Storage Time,

tc & tfi @ IC/IB = 10

800

01080 IC, COLLECTOR CURRENT (AMPS)

t, TIME (ns)

200

TC = 125

TC = 25

tfi

400

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200

600

1600

1200

600

400

200

3 9 11 13

450

250

3 9 11 13

700

500

300

100

125

C25

BUH150

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

01042 hFE, FORCED GAIN 8

TJ = 125

TJ = 25

Figure 16. Inductive Storage Time

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200

Figure 17. Inductive Fall Time

200

0103 hFE, FORCED GAIN

150

tfi, FALL TIME (ns)

100

4 6 7

TJ = 125

TJ = 25

, STORAGE TIME (tsi

IC = 5 A

IC = 10 A

5 8 9

IBoff = IB2

VCC = 15 V

VZ = 300 V

LC = 200

Figure 18. Inductive Crossover Time

800

300

100

hFE, FORCED GAIN

600

tc, CROSSOVER TIME (ns)

700

400

500

200

103 4 6 75 8 9

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200

TJ = 125

TJ = 25

IC = 5 A

IC = 10 A

BUH150

8 Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

Table 1. Inductive Load Switching Drive Circuit

V(BR)CEO(sus)

L = 10 mH

RB2 =

∞

VCC = 20 Volts

IC(pk) = 100 mA

Inductive Switching

L = 200

RB2 = 0

VCC = 15 Volts

RB1 selected for

desired IB1

RBSOA

L = 500

RB2 = 0

VCC = 15 Volts

RB1 selected for

desired IB1

Figure 19. Dynamic Saturation Voltage

Measurements

TIME

VCE

0 V

90% IB

dyn 1

dyn 3

Figure 20. Inductive Switching Measurements

0820 TIME 6

1 3 5 7

Vclamp

tsi

tfi

90% IC

10% IC

90% IB1

10% Vclamp

+15 V

F150

Ω

3 W 100

Ω

3 W

MPF930

+10 V

Ω

COMMON

–Voff

500

MPF930

MTP8P10

MUR105

MJE210 MTP12N10

MTP8P10

150

Ω

3 W

100

Iout

RB1

RB2

IC PEAK

VCE PEAK

VCE

IB1

IB2

TYPICAL THERMAL RESPONSE

Figure 21. Forward Bias Power Derating

016010020 TC, CASE TEMPERATURE (

0.8

POWER DERATING FACTOR

0.6

0.4

0.2

60 140

SECOND BREAKDOWN

DERATING

40 80 120

THERMAL DERATING

BUH150

Motorola Bipolar Power Transistor Device Data

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC–VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate. The data of Figure 22 is based

on TC = 25°C; TJ(pk) is variable depending on power level.

Second breakdown pulse limits are valid for duty cycles to

10% but must be derated when TC > 25°C. Second

breakdown limitations do not derate the same as thermal

limitations. Allowable current at the voltages shown on

Figure 22 may be found at any case temperature by using

the appropriate curve on Figure 21.

TJ(pk) may be calculated from the data in Figure 24. At any

case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations

imposed by second breakdown. For inductive loads, high

voltage and current must be sustained simultaneously during

turn–off with the base to emitter junction reverse biased. The

safe level is specified as a reverse biased safe operating

area (Figure 23). This rating is verified under clamped

conditions so that the device is never subjected to an

avalanche mode.

Figure 22. Forward Bias Safe Operating Area

100

0.01 10001 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 23. Reverse Bias Safe Operating Area

0800300 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

100

0.1

IC, COLLECTOR CURRENT (AMPS)

5 ms 1 ms

GAIN

≥

0 V –1.5 V

–5 V

≤

125

LC = 4 mH

400 500 700600

EXTENDED SOA

TYPICAL THERMAL RESPONSE

Figure 24. Typical Thermal Response (ZθJC(t)) for BUH150

0.01 100.10.01 t, TIME (ms)

0.1

1 100 1000

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

JC(t) = r(t) R

JC = 0.83

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

0.05

SINGLE PULSE

0.5

0.2

0.1

0.02

BUH150

10 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

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BUH150/D

*BUH150/D*

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