C2M0280120D VDS 1200 V ID @ 25C 10 A RDS(on) Silicon Carbide Power MOSFET TM C2M MOSFET Technology 280 m N-Channel Enhancement Mode Features * * * * * * Package High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits * * * * Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications * * * * LED Lighting Power Supplies High Voltage DC/DC Converters Industrial Power Supplies HVAC Part Number Package C2M0280120D TO-247-3 Maximum Ratings (TC = 25 C unless otherwise specified) Symbol Value Unit Test Conditions VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 A VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values VGSop Gate - Source Voltage -5/+20 V Recommended operational values ID ID(pulse) PD TJ , Tstg 1 Parameter Continuous Drain Current Pulsed Drain Current 10 6 A VGS = 20 V, TC = 25 C VGS = 20 V, TC = 100 C 20 A Pulse width tP limited by Tjmax Power Dissipation 62.5 W TC=25 C, TJ = 150 C Operating Junction and Storage Temperature -55 to +150 C TL Solder Temperature 260 C Md Mounting Torque 1 8.8 Nm lbf-in C2M0280120D Rev. B, 10-2015 1.6 mm (0.063") from case for 10s M3 or 6-32 screw Note Fig. 19 Fig. 22 Fig. 20 Electrical Characteristics (TC = 25C unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) Min. Typ. Max. 1200 2.0 2.6 VGS = 0 V, ID = 100 A V VDS = VGS, ID = 1.25mA V VDS = VGS, ID = 1.25mA, TJ = 150 C 100 A VDS = 1200 V, VGS = 0 V 250 nA VGS = 20 V, VDS = 0 V 4 280 Drain-Source On-State Resistance Test Conditions V 2.1 1 Unit 370 m 530 2.8 VGS = 20 V, ID = 6 A, TJ = 150 C VDS= 20 V, IDS= 6 A Fig. 11 Fig. 4,5,6 gfs Transconductance Ciss Input Capacitance 259 Coss Output Capacitance 23 Crss Reverse Transfer Capacitance 3 Eoss Coss Stored Energy 12.5 J VAC = 25 mV Fig 16 EAS Avalanche Energy, Single Pluse 280 mJ ID = 6A, VDD = 50V Fig. 29 EON Turn-On Switching Energy 32 EOFF Turn Off Switching Energy 37 J VDS = 800 V, VGS = -5/20 V, ID = 6A, RG(ext) = 2.5, L= 412 H Fig. 25 td(on) Turn-On Delay Time 5.2 Rise Time 7.6 Turn-Off Delay Time 10.8 ns Fig. 27 Fall Time 9.9 VDD = 800 V, VGS = -5/20 V ID = 6 A, RG(ext) = 2.5 , RL = 133 Timing relative to VDS Per IEC60747-8-4 pg 83 Internal Gate Resistance 11.4 f = 1 MHz, VAC = 25 mV, ESR of CISS Qgs Gate to Source Charge 5.6 Qgd Gate to Drain Charge 7.6 nC Qg Gate Charge Total 20.4 VDS = 800 V, VGS = -5/20 V ID = 6 A Per IEC60747-8-4 pg 21 tr td(off) tf RG(int) S VGS = 20 V, ID = 6 A Note 2.4 VDS= 20 V, IDS= 6 A, TJ = 150 C Fig. 7 VGS = 0 V pF Fig. 17,18 VDS = 1000 V f = 1 MHz Fig. 12 Reverse Diode Characteristics Symbol VSD Parameter Diode Forward Voltage Typ. Max. Unit Test Conditions Note 3.3 V VGS = - 5 V, ISD = 3 A 3.1 V VGS = - 5 V, ISD = 3 A, TJ = 150 C A TC = 25C Note 1 VGS = - 5 V, ISD = 6 A, VR = 800 V dif/dt = 1000 A/s Note 1 IS Continuous Diode Forward Current 10 trr Reverse Recovery time 24 ns Qrr Reverse Recovery Charge 70 nC Irrm Peak Reverse Recovery Current 4 A Fig. 8, 9, 10 Note (1): When using SiC Body Diode the maximum recommended VGS = -5V Thermal Characteristics Symbol 2 Parameter RJC Thermal Resistance from Junction to Case RJC Thermal Resistance from Junction to Ambient C2M0280120D Rev. B, 10-2015 Typ. Max. 1.8 2.0 40 Unit C/W Test Conditions Note Fig. 21 Typical Performance 14 Drain-Source Current, IDS (A) 16 Conditions: TJ = -55 C tp < 200 s 12 14 VGS = 16 V VGS = 18 V VGS = 14 V 10 8 VGS = 12 V 6 4 VGS = 10 V 2 2.5 5.0 7.5 10.0 12 VGS = 20 V VGS = 18 V 10 VGS = 12 V 8 6 VGS = 10 V 4 0 12.5 0.0 2.5 5.0 Drain-Source Voltage, VDS (V) VGS = 18 V 12 Conditions: IDS = 6 A VGS = 20 V tp < 200 s 1.8 1.6 VGS = 20 V On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) VGS = 16 V VGS = 14 V VGS = 12 V 10 VGS = 10 V 8 6 4 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 0.0 2.5 5.0 7.5 10.0 -50 12.5 -25 0 700 Conditions: VGS = 20 V tp < 200 s 700 On Resistance, RDS On (mOhms) 600 TJ = 150 C 500 400 TJ = 25 C TJ = -55 C 200 75 100 125 150 Conditions: IDS = 6 A tp < 200 s 600 300 50 Figure 4. Normalized On-Resistance vs. Temperature Figure 3. Output Characteristics TJ = 150 C 800 25 Junction Temperature, TJ (C) Drain-Source Voltage, VDS (V) On Resistance, RDS On (mOhms) 12.5 Figure 2. Output Characteristics TJ = 25 C 2 100 0 500 VGS = 14 V 400 VGS = 16 V VGS = 18 V 300 VGS = 20 V 200 100 0 0 2 4 6 8 10 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 10.0 2.0 Conditions: TJ = 150 C tp < 200 s 14 7.5 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 C 16 VGS = 14 V VGS = 16 V 2 0 0.0 Conditions: TJ = 25 C tp < 200 s VGS = 20 V Drain-Source Current, IDS (A) 16 C2M0280120D Rev. B, 10-2015 12 14 -50 -25 0 25 50 75 100 Junction Temperature, TJ (C) Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 125 150 Typical Performance 10 9 -5 -6 Conditions: VDS = 20 V tp < 200 s -2 -3 VGS = 0 V TJ = 150 C 6 TJ = 25 C 5 4 3 TJ = -55 C 2 1 0 0 -2 -4 Drain-Source Current, IDS (A) 7 -1 Condition: TJ = -55 C tp < 200 s VGS = -5 V 8 Drain-Source Current, IDS (A) -4 VGS = -2 V -6 -8 -10 -12 -14 0 0 2 4 6 8 10 12 14 -16 Gate-Source Voltage, VGS (V) Drain-Source Voltage, VDS (A) Figure 7. Transfer Characteristic For Various Junction Temperatures -5 -4 -3 VGS = -5 V -2 -1 0 Condition: TJ = 25 C tp < 200 s VGS = 0 V -6 -4 -3 -2 -1 VGS = -2 V -6 -8 -10 -12 0 Condition: TJ = 150 C tp < 200 s VGS = -5 V -2 -4 Drain-Source Current, IDS (A) -5 0 VGS = 0 V VGS = -2 V -8 -10 -12 -14 -16 -16 Drain-Source Voltage, VDS (A) Drain-Source Voltage, VDS (A) Figure 9. Body Diode Characteristic at 25 C Figure 10. Body Diode Characteristic at 150 C 3.5 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 Junction Temperature TJ (C) Figure 11. Threshold Voltage vs. Temperature C2M0280120D Rev. B, 10-2015 150 Conditions: IDS = 6 A IGS = 100 mA VDS = 800 V TJ = 25 C 20 Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 3.0 4 25 Conditions Conditions VV DSDS==V10 GS V IDS==1.25 IDS 0.5 mA -25 -2 -6 -14 -50 0 -4 Drain-Source Current, IDS (A) -6 Figure 8. Body Diode Characteristic at -55 C 15 10 5 0 -5 0 5 10 15 20 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 25 Typical Performance -6 -5 -4 -3 -2 -1 0 -6 -5 -4 -3 -2 -1 0 0 VGS = 0 V 0 Conditions: TJ = 25 C tp < 200 s -2 Drain-Source Current, IDS (A) VGS = 5 V -4 -6 VGS = 10 V -8 VGS = 15 V -10 VGS = 20 V -12 VGS = 0 V -2 VGS = 5 V Drain-Source Current, IDS (A) Conditions: TJ = -55 C tp < 200 s -4 VGS = 10 V -6 VGS = 15 V -8 -10 VGS = 20 V -12 -14 -14 -16 Drain-Source Voltage, VDS (V) Figure 13. 3rd Quadrant Characteristic at -55 C -6 -5 -4 -3 -2 -1 Figure 14. 3rd Quadrant Characteristic at 25 C 0 14 0 VGS = 5 V VGS = 0 V VGS = 15 V 12 -2 VGS = 10 V Drain-Source Current, IDS (A) -4 VGS = 20 V -6 -8 -10 Stored Energy, EOSS (J) Conditions: TJ = 150 C tp < 200 s -12 8 6 4 0 0 -16 Drain-Source Voltage, VDS (V) 10 2 -14 200 800 1000 1000 1200 Conditions: TJ = 25 C VAC = 25 mV f = 1 MHz Ciss 100 Capacitance (pF) Capacitance (pF) 600 Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 C VAC = 25 mV f = 1 MHz Ciss 400 Drain to Source Voltage, VDS (V) Figure 15. 3rd Quadrant Characteristic at 150 C 1000 -16 Drain-Source Voltage, VDS (V) Coss 10 100 Coss 10 Crss Crss 1 0 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0-200 V) 5 C2M0280120D Rev. B, 10-2015 200 1 0 200 400 600 Drain-Source Voltage, VDS (V) 800 Figure 18. Capacitances vs. Drain-Source Voltage (0-1000 V) 1000 Typical Performance 70 Conditions: TJ 150 C Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 12 10 8 6 4 2 0 Conditions: TJ 150 C 60 50 40 30 20 10 0 -55 -5 45 95 145 -55 -5 45 Case Temperature, TC (C) 0.5 1 10.00 0.3 0.1 0.05 100E-3 0.02 0.01 SinglePulse 10E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) 10E-3 100E-3 10 s Limited by RDS On 100 s 1 ms 1.00 100 ms 0.10 Conditions: TC = 25 C D = 0, Parameter: tp 0.01 1E-3 0.1 1 1 10 100 1000 Drain-Source Voltage, VDS (V) Figure 21. Transient Thermal Impedance (Junction - Case) Figure 22. Safe Operating Area 350 250 Conditions: TJ = 25 C VDD = 800 V RG(ext) = 2.5 VGS = -5/+20 V FWD = C4D02120A L = 412 H 250 Conditions: TJ = 25 C VDD = 600 V RG(ext) = 2.5 VGS = -5/+20 V FWD = C4D02120A L = 412 H 200 ETotal Switching Energy (uJ) 300 Switching Energy (uJ) 145 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) Figure 19. Continuous Drain Current Derating vs. Case Temperature 200 EOn 150 100 EOff 150 ETotal EOn 100 EOff 50 50 0 0 2 4 6 8 10 12 14 16 Drain to Source Current, IDS (A) Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 800V) 6 95 Case Temperature, TC (C) C2M0280120D Rev. B, 10-2015 18 0 0 2 4 6 8 10 12 14 16 Drain to Source Current, IDS (A) Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V) 18 Typical Performance 120 100 Switching Loss (uJ) 120 Conditions: TJ = 25 C VDD = 800 V IDS = 6 A VGS = -5/+20 V FWD = C4D02120A L = 412 H 80 EOn 60 EOff 40 80 ETotal 60 EOff 40 EOn 20 20 0 0 0 5 10 15 20 25 30 External Gate Resistor RG(ext) (Ohms) 20 -50 -25 0 25 50 75 100 Figure 26. Clamped Inductive Switching Energy vs. Temperature Conditions: TJ = 25 C VDD = 800 V RL = 133 VGS = -5/+20 V 18 16 14 td (off) 12 tf 10 tr 8 6 td (on) 4 2 0 0 5 10 15 20 25 External Gate Resistor, RG(ext) (Ohms) Figure 28. Switching Time Definition Figure 27. Switching Times vs. RG(ext) 12 Conditons: VDD = 50 V Avalanche Current (A) 10 8 6 4 2 0 0 25 50 75 100 Time in Avalanche TAV (us) Figure 29. Single Avalanche SOA curve 7 C2M0280120D Rev. B, 10-2015 125 Junction Temperature, TJ (C) Figure 25. Clamped Inductive Switching Energy vs. RG(ext) Time (ns) Conditions: IDS = 6 A VDD = 800 V RG(ext) = 2.5 VGS = -5/+20 V FWD = C4D02120A L = 412 H 100 ETotal Swithcing Loss (uJ) 140 125 150 150 Test Circuit Schematic VDC C4D02120A 2A, 1200V SiC Schottky D1 L=412 uH CDC=42.3 uF D.U.T C2M0280120D Q1 Figure 30. Clamped Inductive Switching Waveform Test Circuit Q1 RG L=412 uH CDC=42.3 uF VDC D.U.T C2M0280120D VGS= - 5V RG Q2 C2M0280120D Figure 31. Body Diode Recovery Test Circuit ESD Ratings 8 ESD Test Total Devices Sampled Resulting Classification ESD-HBM All Devices Passed 1000V 2 (>2000V) ESD-MM All Devices Passed 400V C (>400V) ESD-CDM All Devices Passed 1000V IV (>1000V) C2M0280120D Rev. B, 10-2015 Package Dimensions POS Package TO-247-3 T V U W Pinout Information: * * * Pin 1 = Gate Pin 2, 4 = Drain Pin 3 = Source Inches Millimeters Min Max Min A .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 5.10 E2 .145 .201 3.68 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC N 3 5.44 BSC 3 L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 OP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 9 11 9 11 U 9 11 9 11 V 2 8 2 8 W 2 8 2 8 Recommended Solder Pad Layout TO-247-3 9 C2M0280120D Rev. B, 10-2015 Max Part Number Package Marking C2M0280120D TO-247-3 C2M0280120 Notes * RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. * REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. * This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links * * * C2M PSPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright (c) 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 10 C2M0280120D Rev. B, 10-2015 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Cree, Inc.: C2M0280120D