ky SGS-THOMSON MICROELECTROMICS TDA7240A 20W BRIDGE AMPLIFIER FOR CAR RADIO a COMPACT HEPTAWATT PACKAGE a FEW EXTERNAL COMPONENTS OUTPUT PROTECTED AGAINST SHORT CIRCUITS TG GROUND AND ACROSS LOAD DUMP TRANSIENT THERMAL SHUTDOWN LOUDSPEAKER PROTECTION HIGH GURRENT CAPABILITY LOW DISTORTION/LOW NOISE DESCRIPTION The TDA7240A is a 20W bridge audio amplifier IC designed specially for car radio applications. Thanks to the low external part count and compact Heptawaitt 7-pin power package the TDA/7240A occupies little space on the printed circuit board. Figure 1: Test and Application Gircuit Heptawatt ORDERING NUMBERS : TDA7240AH TDA7240AV TDA7240AD Reliable operation is guaranteed by a comprehen- sive array of on-chip protection features. These in- clude protection against AC and DC output short circuits (to ground and across the load), load dump transients, and junction overtemperature. Additio- nally, the TDA7240A protectsthe loudspeakerwhen one output is short-circuited to ground. +Us op>+ c4 = = cs 22BUF A B.1uF INPUT o{]- 3 5 > 1F | ToA724B8A 5 4 22uF 2 | 4 STANDBY mee C2 = I 22uF cy ob ce e.22uF M391ITORZ248A-81 Appril 1995 1/7TDA7240A PION CONNECTION (Top view) OUTPUT SUPPLY VOLTAGE OUTPUT GND INPUT SUR AND STAND-BY FEEDBACK Z9n CONNECTED TO PIN 4 MSTT DAF 240R-2 ABSOLUTE MAXIMUM RATINGS bol Parameter Ve 18 DCS Vo 28 Peak Vo or50ms 40 Peak Current (non ive t = 0.1ms 45 Peak Current itive f >10Hz 3.5 Power D tion at Tcase = 85C 16 Storage and Junction T: 40 to 150 (*)Internaly limited THERMAL DATA Symbol Parameter Value Unit Rithj-case | Thermal Resistance Junctioncase Max. 4 Vv el? SGS-THOMSON ky MIGRGELECTREMICSTDA7240A ELECTRICAL CHARACTERISTICS (refer to the circuit of fig. 1, Tamb = 25C, Rin (heatsink) =4C/W, Vs = 14.4V) Symbol Parameter Test Conditions Min. Typ. Max. Unit Vs Supply Voltage 18 Vv Vos Output Offset Voltage 150 mv lg Total Quiescent Current Ri = 42 65 120 mA Po Output Power f= ikHz; d= 10% Ri = 42 18 20 W Ri = 80 10 12 W d Distortion RL =4Q f= 1kHz 0.1 0.5 % Po = 50mW to 12W Ri = 8 f= 1kHz 0.05 0.5 % Po = 50mW to 12W GV Voltage Gain f = 1KHz 39.5 40 40.5 dB SVR | Suppl Voltage Rejection |f = 100Hz Rg =10KQ2 35 40 dB En Total Input Noise Rg = 10KQ (*) 2 wv (**) 3 10 wv 7 Efficiency Ri = 42 f= 1KHz 65 % let Stand-by Current 200 LA Fi Input Resistance f = 1kKHz 70 kQ Vi Input Sensitivity f= 1kKHz; Po = 2W; RL =40 28 mv fL Low Frequency Roll Off Po=15W; Ri =40 30 Hz (-3dB) fu High Frequency Roll Off Po=15W:; RL=40 25 kHz (-3dB) As Stand-by Attenuation Vo = 2Vrms 70 90 dB Vi (ping) | Stand-by Threshold 1 Vv (*) B= Cuve A ("YB =22Hz to 22 KHz Figure 2: P.C. Board and Componenis layout of the Circuit of Fig. 1.(1:1scale) 3/7 THOMSOTDA7240A APPLICATION SUGGESTION The recommended values of the components are those shown on application circuit of Fig. 1. Different values can be used, the following table can help the designer. Component Recommended Purpose Larger Than Smaller Than Value R1, R2 2.20 Frequency Stability Danger of High Frequency Oscillation C1 TPF Input DC Decoupling |Higher Turn Onand Higher Turn On Pop. Stand-by Delay Higher Low Frequency Cutoff C2 22uF Ripple Rejection Increase of SVR Degradation of SVR Increase of the Turn On Delay C3 22uF Feedback low Higher Low Frequency Frequency Cutoff Cutoff C6, C7 0.22uF Frequency Stability Danger of Oscillation C4 220F Supply Filter Danger of Oscillation C5 0.1F Supply Bypass Danger of Oscillation Figure 3 : Output Power vs. Supply Voltage. Figure 4 : Distortion vs. Qutput Power. Bo M34 TDRI24ER- BY 4 MSITDAZ2IEN-B4 tw) t%) 214.4 22 8 48 Ff~1KHz 18 6 14 4 14 2 6 8 $ 186 411 #412 13 #14 #15 =Yaty) 2 5 18 14 Potw) Figure 5 : QutputPower vs. Supply voltage. Figure 6 : Distortion vs. Output Power. Po M9ITOAA248N- 85 THD HOt TOAF 248A - BE tw / tH) 14 7 18 THD 18% / Vs-14,4U 12 RL.Ba 7 8 RL82 FaiIKHz2 / Fs1KH2 | 18 6 4 8 Se ae 9 18 11 12 13 14 15 16 UsiU) 68 2 4 6 8 18 12 Poil) 47 SCS-THOMSON ky7 SenoneernonesTDA7240A Figure 7 : Distortion vs. Frequency. Figure 8 : Supply Voltage Rejection vs. Frequency. d M9TTORI2AEA- BF d HSITORT24BR- BS t&) 2) 8.6 68 Vee14.4V Pa-i2y UR8.5U RL.49 Rg~18kn 58 | C2.22u 9.4 Po-6 ta RL-49 jj | Ae2. tauF 8.2 S/S y 38 28 18 13? 133 104 ftHz) 19? 15 FIHZ) Figure 9 : Power Dissipation and Efficiency vs. Figure 10 : Power Dissipation and Efficiency vs. Output Power. Output Power. - MAITOAP24ER-Tt Ptot MSTTOAP24BA-18 Ptot m tu t%) tu) te) 78 7a 12 68 6 58 44 58 5 5a 18 48 4 40 ) 38 3 38 Vewi14.4y Vs-14,4U 8 RL-49 28 2 RL-8n 28 fei KHz f2iKHz 1 18 a 2 6 18 14 18 22 PoiW) a 2 4 6 8B 18 12 Pot) 5/7 haz SGS-THOMSON 7 WwerorectramesTDA7240A HEPTAWATT PACKAGE MECHANICAL DATA mm DIM. 6/7 SCS-THOMSON ky7 SenoneernonesTDA7240A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifica- tions mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information pre- viously supplied. SGS-THOMSON Microelectronics products ara not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelactronics - All Rights Reserved HEPTAWATT is a Trademark of SGS-THOMSON Microelectronics SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malia - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. 77 THOMSO