TLP185(SE
1
Photocouplers Infrared LED & Photo Transistor
TLP185(SE
TLP185(SE
TLP185(SE
TLP185(SE
Start of commercial production
2013-01
1.
1.
1.
1. Applications
Applications
Applications
Applications
• Office Equipment
• Programmable Logic Controllers (PLCs)
• AC Adapters
• I/O Interface Boards
2.
2.
2.
2. General
General
General
General
The TLP185(SE consist of a photo transistor optically coupled to an infrared LED.
The TLP185(SE photocoupler is housed in the very small and thin SO6 package.
Since TLP185(SE is smaller than DIP package, it's suitable for high-density surface mounting application such
as programmable controllers.
3.
3.
3.
3. Features
Features
Features
Features
(1) Collector-emitter voltage: 80 V (min)
(2) Current transfer ratio: 50% (min)
GB Rank: 100% (min)
(3) Isolation voltage: 3750 Vrms (min)
(4) Operating temperature: -55 to 110
(5) Safety standards
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)
(Note 1)
(Note 1)
(Note 1)
CQC-approved: GB4943.1, GB8898 Japan and Thailand Factory
Note 1: When a VDE approved type is needed, please designate the Option (V4)
Option (V4)
Option (V4)
Option (V4).
4.
4.
4.
4. Packaging and Pin Assignment
Packaging and Pin Assignment
Packaging and Pin Assignment
Packaging and Pin Assignment
11-4M1S
1: Anode
3: Cathode
4: Emitter
6: Collector
2019-11-18
Rev.7.0
©2015-2019
Toshiba Electronic Devices & Storage Corporation
TLP185(SE
2
5.
5.
5.
5. Principle of Operation
Principle of Operation
Principle of Operation
Principle of Operation
5.1.
5.1.
5.1.
5.1. Mechanical Parameters
Mechanical Parameters
Mechanical Parameters
Mechanical Parameters
Characteristics
Creepage distances
Clearance
Internal isolation thickness
Min
5.0
5.0
0.4
Unit
mm
6.
6.
6.
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
LED
Detector
Common
Characteristics
Input forward current
Input forward current derating
Input forward current (pulsed)
Input reverse voltage
Input power dissipation
Input power dissipation derating
Junction temperature
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Collector power dissipation derating
Junction temperature
Operating temperature
Storage temperature
Lead soldering temperature
Total power dissipation
Isolation voltage
(Ta ≥ 90 )
(Ta ≥ 90 )
(Ta ≥ 25 )
(10 s)
AC, 60 s, R.H. ≤ 60%
Symbol
IF
∆IF/∆Ta
IFP
VR
PD
∆PD/∆Ta
Tj
VCEO
VECO
IC
PC
∆PC/∆Ta
Tj
Topr
Tstg
Tsol
PT
BVS
Note
(Note 1)
(Note 2)
Rating
50
-1.5
1
5
100
-2.86
125
80
7
50
150
-1.5
125
-55 to 110
-55 to 125
260
200
3750
Unit
mA
mA/
A
V
mW
mW/
V
V
mA
mW
mW/
mW
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW) ≤ 100 µs, f = 100 Hz
Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
7.
7.
7.
7. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
LED
Detector
Characteristics
Input forward voltage
Input reverse current
Input capacitance
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Dark Current
Collector-emitter capacitance
Symbol
VF
IR
Ct
V(BR)CEO
V(BR)ECO
IDARK
CCE
Note Test Condition
IF = 10 mA
VR = 5 V
V = 0 V, f = 1 MHz
IC = 0.5 mA
IE = 0.1 mA
VCE = 48 V
VCE = 48 V, Ta = 85
V = 0 V, f = 1 MHz
Min
1.1
80
7
Typ.
1.25
30
0.01
2
10
Max
1.4
5
0.08
50
Unit
V
µA
pF
V
µA
pF
2019-11-18
Rev.7.0
©2015-2019
Toshiba Electronic Devices & Storage Corporation
TLP185(SE
3
8.
8.
8.
8. Coupled Electrical Characteristics (Unless otherwise specified, T
Coupled Electrical Characteristics (Unless otherwise specified, T
Coupled Electrical Characteristics (Unless otherwise specified, T
Coupled Electrical Characteristics (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Current transfer ratio
Saturated current transfer ratio
Collector-emitter saturation
voltage
OFF-state collector current
Symbol
IC/IF
IC/IF(sat)
VCE(sat)
IC(off)
Note
(Note 1)
Test Condition
IF = 5 mA, VCE = 5 V
IF = 5 mA, VCE = 5 V, GB Rank
IF = 1 mA, VCE = 0.4 V
IF = 1 mA, VCE = 0.4 V, GB Rank
IC = 2.4 mA, IF = 8 mA
IC = 0.2 mA, IF = 1 mA
IC = 0.2 mA, IF = 1 mA, GB Rank
VF = 0.7 V, VCE = 48 V
Min
50
100
30
Typ.
60
0.2
1
Max
600
600
0.3
0.3
10
Unit
%
V
µA
Note 1: See Table 8.1 for current transfer ratio.
Table
Table
Table
Table 8.1
8.1
8.1
8.1 Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, T
Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, T
Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, T
Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
Rank
Blank
Y
GR
GB
BL
YH
GRL
GRH
BLL
Test Condition
IF = 5 mA, VCE = 5 V
Current
transfer ratio
IC/IF
Min
50
50
100
100
200
75
100
150
200
Current
transfer ratio
IC/IF
Max
600
150
300
600
600
150
200
300
400
Marking of
Classification
Blank, YE, GR, GB,
BL, Y+, G, G+, B
YE, Y+
GR, G, G+
GB, GR, BL, G, G+, B
BL, B
Y+
G
G+
B
Unit
%
Note: Specify both the part number and a rank in this format when ordering.
Example: TLP185(GB,SE
For safety standard certification, however, specify the part number alone.
Example: TLP185(GB,SE: TLP185
9.
9.
9.
9. Isolation Characteristics (Unless otherwise specified, T
Isolation Characteristics (Unless otherwise specified, T
Isolation Characteristics (Unless otherwise specified, T
Isolation Characteristics (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Total capacitance (input to
output)
Isolation resistance
Isolation voltage
Symbol
CS
RS
BVS
Note
(Note 1)
(Note 1)
(Note 1)
Test Condition
VS = 0 V, f = 1 MHz
VS = 500 V, R.H. ≤ 60%
AC, 60 s
Min
1012
3750
Typ.
0.8
1014
Max
Unit
pF
Ω
Vrms
Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
2019-11-18
Rev.7.0
©2015-2019
Toshiba Electronic Devices & Storage Corporation
TLP185(SE
4
10.
10.
10.
10. Switching Characteristics (Unless otherwise specified, T
Switching Characteristics (Unless otherwise specified, T
Switching Characteristics (Unless otherwise specified, T
Switching Characteristics (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Rise time
Fall time
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
Symbol
tr
tf
ton
toff
ton
ts
toff
Note Test Condition
VCC = 10 V, IC = 2 mA,
RL = 100 Ω
See Fig. 10.1
VCC = 5 V, IF = 16 mA,
RL = 1.9 kΩ
Min
Typ.
2
3
3
3
0.5
25
40
Max
Unit
µs
Fig.
Fig.
Fig.
Fig. 10.1
10.1
10.1
10.1 Switching Time Test Circuit and Waveform
Switching Time Test Circuit and Waveform
Switching Time Test Circuit and Waveform
Switching Time Test Circuit and Waveform
2019-11-18
Rev.7.0
©2015-2019
Toshiba Electronic Devices & Storage Corporation
TLP185(SE
5
11.
11.
11.
11. Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Fig.
Fig.
Fig.
Fig. 11.1
11.1
11.1
11.1 I
I
I
IF
F
F
F - T
- T
- T
- Ta
a
a
aFig.
Fig.
Fig.
Fig. 11.2
11.2
11.2
11.2 P
P
P
PC
C
C
C - T
- T
- T
- Ta
a
a
a
Fig.
Fig.
Fig.
Fig. 11.3
11.3
11.3
11.3 I
I
I
IFP
FP
FP
FP - D
- D
- D
- DR
R
R
RFig.
Fig.
Fig.
Fig. 11.4
11.4
11.4
11.4 I
I
I
IF
F
F
F - V
- V
- V
- VF
F
F
F
Fig.
Fig.
Fig.
Fig. 11.5
11.5
11.5
11.5 ∆
∆
∆
∆V
V
V
VF
F
F
F/
/
/
/∆
∆
∆
∆T
T
T
Ta
a
a
a - I
- I
- I
- IF
F
F
FFig.
Fig.
Fig.
Fig. 11.6
11.6
11.6
11.6 I
I
I
IFP
FP
FP
FP - V
- V
- V
- VFP
FP
FP
FP
2019-11-18
Rev.7.0
©2015-2019
Toshiba Electronic Devices & Storage Corporation
TLP185(SE
6
Fig.
Fig.
Fig.
Fig. 11.7
11.7
11.7
11.7 I
I
I
IC
C
C
C - V
- V
- V
- VCE
CE
CE
CE Fig.
Fig.
Fig.
Fig. 11.8
11.8
11.8
11.8 I
I
I
IC
C
C
C - V
- V
- V
- VCE
CE
CE
CE
Fig.
Fig.
Fig.
Fig. 11.9
11.9
11.9
11.9 I
I
I
IC
C
C
C - I
- I
- I
- IF
F
F
FFig.
Fig.
Fig.
Fig. 11.10
11.10
11.10
11.10 I
I
I
IC
C
C
C/I
/I
/I
/IF
F
F
F - I
- I
- I
- IF
F
F
F
Fig.
Fig.
Fig.
Fig. 11.11
11.11
11.11
11.11 I
I
I
IDARK
DARK
DARK
DARK - T
- T
- T
- Ta
a
a
aFig.
Fig.
Fig.
Fig. 11.12
11.12
11.12
11.12 V
V
V
VCE(sat)
CE(sat)
CE(sat)
CE(sat) - T
- T
- T
- Ta
a
a
a
2019-11-18
Rev.7.0
©2015-2019
Toshiba Electronic Devices & Storage Corporation
TLP185(SE
7
Fig.
Fig.
Fig.
Fig. 11.13
11.13
11.13
11.13 I
I
I
IC
C
C
C - T
- T
- T
- Ta
a
a
aFig.
Fig.
Fig.
Fig. 11.14
11.14
11.14
11.14 Switching Time - R
Switching Time - R
Switching Time - R
Switching Time - RL
L
L
L
Fig.
Fig.
Fig.
Fig. 11.15
11.15
11.15
11.15 Switching Time - T
Switching Time - T
Switching Time - T
Switching Time - Ta
a
a
a
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
2019-11-18
Rev.7.0
©2015-2019
Toshiba Electronic Devices & Storage Corporation
TLP185(SE
8
12.
12.
12.
12. Soldering and Storage
Soldering and Storage
Soldering and Storage
Soldering and Storage
12.1.
12.1.
12.1.
12.1. Precautions for Soldering
Precautions for Soldering
Precautions for Soldering
Precautions for Soldering
The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective
of whether a soldering iron or a reflow soldering method is used.
• When using soldering reflow.
The soldering temperature profile is based on the package surface temperature.
(See the figure shown below, which is based on the package surface temperature.)
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.
Fig.
Fig.
Fig.
Fig. 12.1.1
12.1.1
12.1.1
12.1.1 An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used
An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used
An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used
An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used
• When using soldering flow
Preheat the device at a temperature of 150 (package surface temperature) for 60 to 120 seconds.
Mounting condition of 260 within 10 seconds is recommended.
Flow soldering must be performed once.
• When using soldering Iron
Complete soldering within 10 seconds for lead temperature not exceeding 260 or within 3 seconds not
exceeding 350
Heating by soldering iron must be done only once per lead.
12.2.
12.2.
12.2.
12.2. Precautions for General Storage
Precautions for General Storage
Precautions for General Storage
Precautions for General Storage
• Avoid storage locations where devices may be exposed to moisture or direct sunlight.
• Follow the precautions printed on the packing label of the device for transportation and storage.
• Keep the storage location temperature and humidity within a range of 5 to 35 and 45 % to 75 %,
respectively.
• Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
• Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the
solderability of the leads.
• When restoring devices after removal from their packing, use anti-static containers.
• Do not allow loads to be applied directly to devices while they are in storage.
• If devices have been stored for more than two years under normal storage conditions, it is recommended
that you check the leads for ease of soldering prior to use.
2019-11-18
Rev.7.0
©2015-2019
Toshiba Electronic Devices & Storage Corporation
TLP185(SE
9
Package Dimensions
Package Dimensions
Package Dimensions
Package Dimensions
Unit: mm
Weight: 0.08 g (typ.)
Package Name(s)
TOSHIBA: 11-4M1S
2019-11-18
Rev.7.0
©2015-2019
Toshiba Electronic Devices & Storage Corporation
TLP185(SE
10
https://toshiba.semicon-storage.com/
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RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
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AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
2019-11-18
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©2015-2019
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