Document No. E1797E41 (Ver. 4.1)
Date Published February 2012 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2011-2012
DATA SHEET
2G bits DDR3L SDRAM
EDJ2104EDBG (512M words × 4 bits)
EDJ2108EDBG (256M words × 8 bits)
Specifications
• Density: 2G bits
• Organization
64M words × 4 bits × 8 banks (EDJ2104EDBG)
32M words × 8 bits × 8 banks (EDJ2108EDBG)
• Package
78-ball FBGA
Lead-free (RoHS compliant) and Halogen-free
• Power supply: 1.35V (typ.)
VDD, VDDQ = 1.283V to 1.45V
Backward compatible for VDD, VDDQ
= 1.5V ± 0.075V
• Data rate
1600Mbps/1333Mbps/1066Mbps (max.)
• 1KB page size
Row address: A0 to A14
Column address: A0 to A9, A11 (EDJ2104EDBG)
A0 to A9 (EDJ2108EDBG)
• Eight internal banks for concurrent operation
• Burst lengths (BL): 8 and 4 with Burst Chop (BC)
• Burst type (BT):
Sequential (8, 4 with BC)
Interleave (8, 4 with BC)
• /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11
• /CAS Write Latency (CWL): 5, 6, 7, 8
• Precharge: auto precharge option for each burst
access
• Driver strength: RZQ/7, RZQ/6 (RZQ = 240Ω)
• Refresh: auto-refresh, self-refresh
• Refresh cycles
Average refresh period
7.8µs at 0°C ≤ TC ≤ +85°C
3.9µs at +85°C < TC ≤ +95°C
• Operating case temperature range
TC = 0°C to +95°C
Features
• Double-data-rate architecture: two data transfers per
clock cycle
• The high-speed data transfer is realized by the 8 bits
prefetch pipelined architecture
• Bi-directional differential data strobe (DQS and /DQS)
is transmitted/received with data for capturing data at
the receiver
• DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
• Data mask (DM) for write data
• Posted /CAS by programmable additive latency for
better command and data bus efficiency
• On-Die Termination (ODT) for better signal quality
Synchronous ODT
Dynamic ODT
Asynchronous ODT
• Multi Purpose Register (MPR) for pre-defined pattern
read out
• ZQ calibration for DQ drive and ODT
• Programmable Partial Array Self-Refresh (PASR)
• /RESET pin for Power-up sequence and reset
function
• SRT range:
Normal/extended
• Programmable Output driver impedance control
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
2
Ordering Information
Part number
Die
revision
Organization
(words × bits)
Internal
banks
JEDEC speed bin
(CL-tRCD-tRP)
Package
EDJ2104EDBG-GN-F
EDJ2104EDBG-DJ-F
EDJ2104EDBG-AE-F
D 512M × 4 8
DDR3L-1600K (11-11-11)
DDR3L-1333H (9-9-9)
DDR3L-1066F (7-7-7)
78-ball FBGA
EDJ2108EDBG-GN-F
EDJ2108EDBG-DJ-F
EDJ2108EDBG-AE-F
256M × 8
DDR3L-1600K (11-11-11)
DDR3L-1333H (9-9-9)
DDR3L-1066F (7-7-7)
Note: 1. Please refer to the EDJ2104BDBG, EDJ2108BDBG datasheet (E1772E) when using this device at 1.5V
operation, unless stated otherwise.
Part Number
Elpida Memory
Density / Bank
21: 2Gb / 8-bank
Organization
04: x4
08: x8
Power Supply
E: 1.35V
Die Rev.
Package
BG: FBGA
Speed
GN: DDR3L-1600K (11-11-11)
DJ: DDR3L-1333H (9-9-9)
AE: DDR3L-1066F (7-7-7)
Product Family
J: DDR3
Type
D: Packaged Device
E D J 21 04 E D BG - GN- F
Environment code
F: Lead Free (RoHS compliant)
and Halogen Free
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
3
Pin Configurations
/xxx indicates active low signal.
VSS VDD
1
VDDQ
VSS
VSS
2
VSSQ DQ0VSS
DQ2
NCVSSQ
VDDQ
VREFDQ
VSS
VDD
/CS
BA0
A7
/RESET
NC
NC
VDD
3
NC
DQS
/DQS
NC
/RAS
/CAS
/WE
BA2
A9
A13
7
NC
DM
DQ1
VDD
NC
CK
/CK
A10(AP)
NC
A11
A14
8
VSS
VSSQ VDDQ
VSSQ
DQ3
VSS
NC
VSS
VDD
ZQ
VREFCA
A6
A8
CKE
VSS
VSS
9
VDD
VSSQ
VDDQ
NC
VDD
(Top view)
78-ball FBGA (×4 configuration)
ODT
NC
A
B
C
D
E
F
G
H
J
A3
VDD A0 A12(/BC) BA1 VDD
A5VSS A2 A1 A4 VSS
K
L
M
N
VSS VDD
1
VDDQ
VSS
VSS
2
VSSQ DQ0VSS
DQ2
DQ6VSSQ
VDDQ
VREFDQ
VSS
VDD
/CS
BA0
A7
/RESET
NC
NC
VDD
3
NC
DQS
/DQS
DQ4
/RAS
/CAS
/WE
BA2
A9
A13
7
NU/(/TDQS)
DM/TDQS
DQ1
VDD
DQ7
CK
/CK
A10(AP)
NC
A11
A14
8
VSS
VSSQ VDDQ
VSSQ
DQ3
VSS
DQ5
VSS
VDD
ZQ
VREFCA
A6
A8
CKE
VSS
VSS
9
VDD
VSSQ
VDDQ
NC
VDD
(Top view)
78-ball FBGA (×8 configuration)
ODT
NC
A
B
C
D
E
F
G
H
J
A3
VDD A0 A12(/BC) BA1 VDD
A5VSS A2 A1 A4 VSS
K
L
M
N
Pin name Function Pin name Function
A0 to A14*3
Address inputs
A10 (AP): Auto precharge
A12(/BC): Burst chop
/RESET*3 Active low asynchronous reset
BA0 to BA2*3 Bank select VDD Supply voltage for internal circuit
DQ0 to DQ7 Data input/output VSS Ground for internal circuit
DQS, /DQS Differential data strobe VDDQ Supply voltage for DQ circuit
TDQS, /TDQS Termination data strobe VSSQ Ground for DQ circuit
/CS*3 Chip select VREFDQ Reference voltage for DQ
/RAS, /CAS, /WE*3 Command input VREFCA Reference voltage
CKE*3 Clock enable ZQ Reference pin for ZQ calibration
CK, /CK Differential clock input NC*1 No connection
DM Write data mask NU*2 Not usable
ODT*3 ODT control
Notes: 1. Not internally connected with die.
2. Don’t connect. Internally connected.
3. Input only pins (address, command, CKE, ODT and /RESET) do not supply termination.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
4
CONTENTS
Specifications.................................................................................................................................................1
Features.........................................................................................................................................................1
Ordering Information......................................................................................................................................2
Part Number ..................................................................................................................................................2
Pin Configurations .........................................................................................................................................3
Electrical Conditions ......................................................................................................................................6
Absolute Maximum Ratings .........................................................................................................................6
Operating Temperature Condition ...............................................................................................................6
Recommended DC Operating Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.283V to 1.45V) ...............7
Recommended DC Operating Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V) ..................7
AC and DC Input Measurement Levels (TC = 0°C to +85°C, VDD, VDDQ = 1.283V to 1.45V)...................8
VREF Tolerances ........................................................................................................................................9
Input Slew Rate Derating ...........................................................................................................................10
AC and DC Logic Input Levels for Differential Signals ...............................................................................16
AC and DC Output Measurement Levels (TC = 0°C to +85°C, VDD, VDDQ = 1.283V to 1.45V) ..............21
AC Overshoot/Undershoot Specification....................................................................................................23
Output Driver Impedance...........................................................................................................................24
On-Die Termination (ODT) Levels and I-V Characteristics ........................................................................26
ODT Timing Definitions..............................................................................................................................28
IDD Measurement Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.283V to 1.45V) ...............................32
Electrical Specifications...............................................................................................................................45
DC Characteristics 1 (TC = 0°C to +85°C, VDD, VDDQ = 1.283V to 1.45V) .............................................45
Pin Capacitance (TC = 25°C, VDD, VDDQ = 1.283V to 1.45V) ................................................................. 47
Standard Speed Bins.................................................................................................................................48
AC Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.283V to 1.45V, VSS, VSSQ = 0V)...................51
Block Diagram .............................................................................................................................................64
Pin Function.................................................................................................................................................65
Command Operation ...................................................................................................................................67
Command Truth Table ...............................................................................................................................67
CKE Truth Table ........................................................................................................................................71
Simplified State Diagram .............................................................................................................................72
RESET and Initialization Procedure ............................................................................................................73
Power-Up and Initialization Sequence .......................................................................................................73
Reset and Initialization with Stable Power .................................................................................................74
Programming the Mode Register.................................................................................................................75
Mode Register Set Command Cycle Time (tMRD) ....................................................................................75
MRS Command to Non-MRS Command Delay (tMOD) ............................................................................75
DDR3 SDRAM Mode Register 0 [MR0] .....................................................................................................76
DDR3 SDRAM Mode Register 1 [MR1] .....................................................................................................77
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
5
DDR3 SDRAM Mode Register 2 [MR2] .....................................................................................................78
DDR3 SDRAM Mode Register 3 [MR3] .....................................................................................................79
Burst Length (MR0) ...................................................................................................................................80
Burst Type (MR0) ......................................................................................................................................80
DLL Enable (MR1) .....................................................................................................................................81
DLL-off Mode .............................................................................................................................................81
DLL on/off switching procedure .................................................................................................................82
Additive Latency (MR1)..............................................................................................................................84
Write Leveling (MR1) .................................................................................................................................85
TDQS, /TDQS function (MR1) ...................................................................................................................88
Extended Temperature Usage (MR2) ........................................................................................................89
Multi Purpose Register (MR3)....................................................................................................................91
Operation of the DDR3 SDRAM..................................................................................................................98
Read Timing Definition...............................................................................................................................98
Read Operation .......................................................................................................................................103
Write Timing Definition.............................................................................................................................110
Write Operation........................................................................................................................................112
Write Timing Violations ............................................................................................................................118
Write Data Mask ......................................................................................................................................119
Precharge ................................................................................................................................................120
Auto Precharge Operation .......................................................................................................................121
Auto-Refresh............................................................................................................................................122
Self-Refresh.............................................................................................................................................123
Power-Down Mode ..................................................................................................................................125
Input Clock Frequency Change during Precharge Power-Down.............................................................. 132
On-Die Termination (ODT).......................................................................................................................133
ZQ Calibration..........................................................................................................................................145
Package Drawing ......................................................................................................................................147
78-ball FBGA ...........................................................................................................................................147
Recommended Soldering Conditions........................................................................................................148
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
6
Electrical Conditions
• All voltages are referenced to VSS (GND)
• Execute power-up and Initialization sequence before proper device operation is achieved.
Absolute Maximum Ratings
Parameter Symbol Rating Unit Notes
Power supply voltage VDD −0.4 to +1.975 V 1, 3
Power supply voltage for output VDDQ −0.4 to +1.975 V 1, 3
Input voltage VIN −0.4 to +1.975 V 1
Output voltage VOUT −0.4 to +1.975 V 1
Reference voltage VREFCA −0.4 to 0.6 × VDD V 3
Reference voltage for DQ VREFDQ −0.4 to 0.6 × VDDQ V 3
Storage temperature Tstg −55 to +100 °C 1, 2
Power dissipation PD 1.0 W 1
Short circuit output current IOUT 50 mA 1
Notes: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage temperature is the case surface temperature on the center/top side of the DRAM.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be no greater than
0.6 × VDDQ, When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Operating Temperature Condition
Parameter Symbol Rating Unit Notes
Operating case temperature TC 0 to +95 °C 1, 2, 3
Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be
supported. During operation, the DRAM case temperature must be maintained between 0°C to +85°C
under all operating conditions.
3. Some applications require operation of the DRAM in the Extended Temperature Range between +85°C
and +95°C case temperature. Full specifications are guaranteed in this range, but the following additional
conditions apply:
a) Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to
3.9µs. (This double refresh requirement may not apply for some devices.)
b) If Self-refresh operation is required in the Extended Temperature Range, then it is mandatory to
either use the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 bit
[A6, A7] = [0, 1]) or enable the optional Auto Self-Refresh mode (MR2 bit [A6, A7] = [1, 0]).
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
7
Recommended DC Operating Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.283V to 1.45V)
[DDR3L Operation]
Parameter Symbol min. typ. max. Unit Notes
Supply voltage VDD 1.283 1.35 1.45 V 1, 2, 3, 4
Supply voltage for DQ VDDQ 1.283 1.35 1.45 V 1, 2, 3, 4
Notes: 1. Maximum DC value may not be greater than 1.425V. The DC value is the linear average of VDD/VDDQ(t)
over a very long period of time (e.g. 1 sec).
2. If maximum limit is exceeded, input levels shall be governed by DDR3 specifications.
3. Under these supply voltages, the device operates to this DDR3L specifcation.
4. Once initialized for DDR3L operation, DDR3 operation may only be used if the device is in reset while
VDD and VDDQ are changed for DDR3 operation shown as following timing wave form.
Recommended DC Operating Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
[DDR3 Operation]
Parameter Symbol min. typ. max. Unit Notes
Supply voltage VDD 1.425 1.5 1.575 V 1, 2, 3
Supply voltage for DQ VDDQ 1.425 1.5 1.575 V 1, 2, 3
Notes: 1. If minimum limit is exceeded, input levels shall be governed by DDR3L specifications.
2. Under 1.5V operation, this DDR3L device operates to the DDR3 specifcations under the same speed
timings as defined for this device.
3. Once initialized for DDR3 operation, DDR3L operation may only be used if the device is in reset while
VDD and VDDQ are changed for DDR3L operation shown as below.
T (min.) = 10ns
T (min.) = 200µs
T (min.) = 10ns
T = 500µs
tIS
Note: 1. From time point Td until Tk NOP or DESL commands must be applied between MRS and ZQCL commands.
: VIH or VIL
CK, /CK
VDD, VDDQ (DDR3)
VDD, VDDQ (DDR3L)
/RESET
CKE
Command
BA
ODT
RTT
tXPR tMRD tMRD tMRD tMOD
tCKSRX
tIS
tIS
Ta Tb Tc Td Te Tf Tg Th Ti Tj Tk
T (min.) = 10ns
tDLLK
tZQinit
*1 *1
Valid
Valid
Valid
Valid
MRS
Static low in case RTT_Nore is enabled at time Tg, otherwise static high or low
MRS MRS MRS
ZQCL
MR2 MR3 MR1 MR0
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
8
AC and DC Input Measurement L evels (TC = 0°C to +85°C, VDD, VDDQ = 1.283V to 1.45V)
Single-Ended AC and DC Input Levels for Command and Address
Parameter Symbol min. typ. max. Unit Notes
DC input logic high VIHCA (DC90) VREF + 0.09 VDD V 1
DC input logic low VILCA (DC90) VSS VREF − 0.09 V 1
AC input logic high VIHCA (AC160) VREF + 0.160 *2 V 1, 2, 5
AC input logic low VILCA (AC160) *2 VREF − 0.160 V 1, 2, 5
AC input logic high VIHCA (AC135) VREF + 0.135 *2 V 1, 2, 5
AC input logic low VILCA (AC135) *2 VREF − 0.135 V 1, 2, 5
Input reference voltage
for address, command
inputs
VREFCA (DC) 0.49 × VDD 0.51 × VDD V 3, 4
Notes: 1. For input only pins except /RESET; VREF = VREFCA (DC).
2. See Overshoot and Undershoot Specifications section.
3. The AC peak noise on VREF may not allow VREF to deviate from VREFCA (DC) by more than ±1% VDD
(for reference: approx. ±13.5mV).
4. For reference: approx. VDD/2 ± 13.5mV.
5. These levels apply to 1.35V operation only. The 1.5V levels (e.g. VIH/VILCA of DC100, AC175 and
AC150) do not apply to when the device is in 1.35V operation.
Single-Ended AC and DC Input Levels for DQ and DM
Parameter Symbol min. typ. max. Unit Notes
DC input logic high VIHDQ (DC90) VREF + 0.09 VDD V 1
DC input logic low VILDQ (DC90) VSS VREF − 0.09 V 1
AC input logic high
DDR3L-1600, 1333 VIHDQ (AC160) V 1, 2, 5
DDR3L-1066 VREF + 0.160 *2 V 1, 2, 5
AC input logic high VIHDQ (AC135) VREF + 0.135 *2 V 1, 2, 5
AC input logic low
DDR3L-1600, 1333 VILDQ (AC160) V 1, 2, 5
DDR3L-1066 *2 VREF − 0.160 V 1, 2, 5
AC input logic low VILDQ (AC135) *2 VREF − 0.135 V 1, 2, 5
Input reference
voltage for DQ, DM inputs VREFDQ (DC) 0.49 × VDD 0.51 × VDD V 3, 4
Notes: 1. For DQ and DM: VREF = VREFDQ (DC).
2. See Overshoot and Undershoot Specifications section.
3. The AC peak noise on VREF may not allow VREF to deviate from VREFDQ (DC) by more than ±1% VDD
(for reference: approx. ±13.5mV).
4. For reference: approx. VDD/2 ± 13.5mV.
5. These levels apply to 1.35V operation only. The 1.5V levels (e.g. VIH/VILDQ of DC100, AC175 and
AC150) do not apply to when the device is in 1.35V operation.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
9
VREF Tolerances
The dc-tolerance limits and ac-noise limits for the reference voltages VREFCA and VREFDQ are shown in Figure
VREF(DC) Tolerance and VREF AC-Noise Limits. It shows a valid reference voltage VREF(t) as a function of time.
(VREF stands for VREFCA and VREFDQ likewise).
VREF(DC) is the linear average of VREF(t) over a very long period of time (e.g. 1 sec). This average has to meet the
min/max requirements in the table of(Single-Ended AC and DC Input Levels for Command and Address).
Furthermore VREF(t) may temporarily deviate from VREF(DC) by no more than +/- 1% VDD.
VREF(DC) Tolerance and VREF AC-Noise Limits
The voltage levels for setup and hold time measurements VIH(AC), VIH(DC), VIL(AC) and VIL(DC) are dependent
on VREF.
VREF shall be understood as VREF(DC), as defined in figure above, VREF(DC) Tolerance and VREF AC-Noise
Limits.
This clarifies that DC-variations of VREF affect the absolute voltage a signal has to reach to achieve a valid high or
low level and therefore the time to which setup and hold is measured. System timing and voltage budgets need to
account for VREF(DC) deviations from the optimum position within the data-eye of the input signals.
This also clarifies that the DRAM setup/hold specification and derating values need to include time and voltage
associated with VREF AC-noise. Timing and voltage effects due to ac-noise on VREF up to the specified limit (±1%
of VDD) are included in DRAM timings and their associated deratings.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
10
Input Slew Rate Derating
For all input signals the total tIS, tDS (setup time) and tIH, tDH (hold time) required is calculated by adding the data
sheet tIS (base), tDS (base) and tIH (base), tDH (base) value to the ∆tIS, ∆tDS and ∆tIH, ∆tDH derating value
respectively.
Example: tDS (total setup time) = tDS (base) + ∆tDS.
Setup (tIS, tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF
(DC) and the first crossing of VIH (AC) min. Setup (tIS, tDS) nominal slew rate for a falling signal is defined as the
slew rate between the last crossing of VREF (DC) and the first crossing of VIL (AC) max. If the actual signal is
always earlier than the nominal slew rate line between shaded ‘VREF (DC) to AC region’, use nominal slew rate for
derating value (See the figure of Slew Rate Definition Nominal).
If the actual signal is later than the nominal slew rate line anywhere between shaded ‘VREF (DC) to AC region’, the
slew rate of a tangent line to the actual signal from the AC level to DC level is used for derating value (see the figure
of Slew Rate Definition Tangent).
Hold (tIH, tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of
VIL (DC) max. and the first crossing of VREF (DC). Hold (tIH, tDH) nominal slew rate for a falling signal is defined
as the slew rate between the last crossing of VIH (DC) min. and the first crossing of VREF (DC). If the actual signal
is always later than the nominal slew rate line between shaded ‘DC level to VREF (DC) region’, use nominal slew
rate for derating value (See the figure of Slew Rate Definition Nominal).
If the actual signal is earlier than the nominal slew rate line anywhere between shaded ‘DC to VREF (DC) region’,
the slew rate of a tangent line to the actual signal from the DC level to VREF (DC) level is used for derating value
(see the figure of Slew Rate Definition Tangent).
For a valid transition the input signal has to remain above/below VIH/VIL(AC) for some time tVAC (see the table of
Required time tVAC above VIH(AC) {below VIL(AC)} for valid transition).
Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached
VIH/IL (AC) at the time of the rising clock transition) a valid input signal is still required to complete the transition and
reach VIH/IL (AC).
For slew rates in between the values listed in the tables below, the derating values may obtained by linear
interpolation.
These values are typically not subject to production test. They are verified by design and characterization.
[Address/Command Setu p and Hold Base-Values for 1V/ns]
DDR3L-1600 DDR3L-1333 DDR3L-1066 Unit Reference
tIS(base) AC160 60 80 140 ps VIH/VILCA(AC)
tIS(base) AC135 185 205 290 ps VIH/VILCA(AC)
tIH(base) DC90 130 150 210 ps VIH/VILCA(DC)
Notes: 1. AC/DC referenced for 1V/ns Address/Command slew rate and 2V/ns differential CK, /CK slew rate.
2. The tIS(base) AC135 specifications are adjusted from the tIS(base) AC160 specification by adding an
additional 125ps for DDR3L-1066 or 100ps for DDR3L-1600/1333 of derating to accommodate for the
lower alternate threshold of 135mV and another 25ps to account for the earlier reference point [(160mV −
135mV)/1V/ns].
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
11
[Derating Values of tIS/tIH AC/DC based AC160 Threshold (DDR3L-1600, 1333, 1066)]
∆tIS, ∆tIH derating in [ps] AC/DC based
AC160 Threshold -> VIH(AC)=VREF(DC)+160mV, VIL(AC)=VREF(DC)-160mV
CK, /CK differential slew rate
4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH Unit
2.0 +80 +45 +80 +45 +80 +45 +88 +53 +96 +61 +104 +69 +112 +79 +120 +95 ps
1.5 +53 +30 +53 +30 +53 +30 +61 +38 +69 +46 +77 +54 +85 +64 +93 +80 ps
1.0 0 0 0 0 0 0 +8 +8 +16 +16 +24 +24 +32 +34 +40 +50 ps
0.9 −1 −3 −1 −3 −1 −3 +7 +5 +15 +13 +23 +21 +31 +31 +39 +47 ps
0.8 −3 −8 −3 −8 −3 −8 +5 +1 +13 +9 +21 +17 +29 +27 +37 +43 ps
0.7 −5 −13 −5 −13 −5 −13 +3 −5 +11 +3 +19 +11 +27 +21 +35 +37 ps
0.6 −8 −20 −8 −20 −8 −20 0 −12 +8 −4 +16 +4 +24 +14 +32 +30 ps
0.5 −20 −30 −20 −30 −20 −30 −12 −22 −4 −14 +4 −6 +12 +4 +20 +20 ps
CMD,
ADD
slew
rate
(V/ns)
0.4 −40 −45 −40 −45 −40 −45 −32 −37 −24 −29 −16 −21 −8 −11 0 +5 ps
[Derating Values of tIS/tIH AC/DC based-Alternate AC135 Threshold (DDR3L-1600, 1333, 1066)]
∆tIS, ∆tIH derating in [ps] AC/DC based
Alternate AC135 Threshold -> VIH(AC)=VREF(DC)+135mV, VIL(AC)=VREF(DC)-135mV
CK, /CK differential slew rate
4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH Unit
2.0 +68 +45 +68 +45 +68 +45 +76 +53 +84 +61 +92 +69 +100 +79 +108 +95 ps
1.5 +45 +30 +45 +30 +45 +30 +53 +38 +61 +46 +69 +54 +77 +64 +85 +80 ps
1.0 0 0 0 0 0 0 +8 +8 +16 +16 +24 +24 +32 +34 +40 +50 ps
0.9 +2 −3 +2 −3 +2 −3 +10 +5 +18 +13 +26 +21 +34 +31 +42 +47 ps
0.8 +3 −8 +3 −8 +3 −8 +11 +1 +19 +9 +27 +17 +35 +27 +43 +43 ps
0.7 +6 −13 +6 −13 +6 −13 +14 −5 +22 +3 +30 +11 +38 +21 +46 +37 ps
0.6 +9 −20 +9 −20 +9 −20 +17 −12 +25 −4 +33 +4 +41 +14 +49 +30 ps
0.5 +5 −30 +5 −30 +5 −30 +13 −22 +21 −14 +29 −6 +37 +4 +45 +20 ps
CMD,
ADD
slew
rate
(V/ns)
0.4 −3 −45 −3 −45 −3 −45 +6 −37 +14 −29 +22 −21 +30 −11 +38 +5 ps
[Required time tVAC above VIH(AC) {below VIL(AC)} for Valid Transition]
tVAC @ AC160mV [ps] tVAC @ AC135mV [ps]
Slew rate (V/ns) min. max. min. max.
>2.0 TBD TBD
2.0 TBD TBD
1.5 TBD TBD
1.0 TBD TBD
0.9 TBD TBD
0.8 TBD TBD
0.7 TBD TBD
0.6 TBD TBD
0.5 TBD TBD
<0.5 TBD TBD
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
12
[Data Setup and Hold Base-Valu es]
DDR3L-1600 DDR3L-1333 DDR3L-1066 Unit Reference
tDS(base) AC160 40 ps VIH/VILDQ(AC)
tDS(base) AC135 25 45 90 ps VIH/VILDQ(AC)
tDH(base) DC90 55 75 110 ps VIH/VILDQ(DC)
Note: 1 AC/DC referenced for 1V/ns DQ slew rate and 2V/ns DQS slew rate
[Derating Values of tDS/tDH AC/DC based , AC160 (DDR3L-1066)]
∆tDS, ∆tDH derating in [ps] AC/DC based
AC160 Threshold -> VIH(AC)=VREF(DC)+160mV, VIL(AC)=VREF(DC)-160mV
DQS, /DQS differential slew rate
4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH Unit
2.0 +80 +45 +80 +45 +80 +45 ps
1.5 +53 +30 +53 +30 +53 +30 +61 +38 ps
1.0 0 0 0 0 0 0 +8 +8 +16 +16 ps
0.9 −1 −3 −1 −3 +7 +5 +15 +13 +23 +21 ps
0.8 −3 −8 +5 +1 +13 +9 +21 +17 +29 +27 ps
0.7 +3 −5 +11 +3 +19 +11 +27 +21 +35 +37 ps
0.6 +8 −4 +16 +4 +24 +14 +32 +30 ps
0.5 +4 −6 +12 +4 +20 +20 ps
DQ
slew
rate
(V/ns)
0.4 −8 −11 0 +5 ps
[Derating Values of tDS/tDH AC/DC based , AC135 (DDR3L-1600, 1333, 1066)]
∆tDS, ∆tDH derating in [ps] AC/DC based
Alternate AC135 Threshold -> VIH(AC)=VREF(DC)+135mV, VIL(AC)=VREF(DC)-135mV
DQS, /DQS differential slew rate
4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH Unit
2.0 +68 +45 +68 +45 +68 +45 ps
1.5 +45 +30 +45 +30 +45 +30 +53 +38 ps
1.0 0 0 0 0 0 0 +8 +8 +16 +16 ps
0.9 +2 −3 +2 −3 +10 +5 +18 +13 +26 +21 ps
0.8 +3 −8 +11 +1 +19 +9 +27 +17 +35 +27 ps
0.7 +14 −5 +22 +3 +30 +11 +38 +21 +46 +37 ps
0.6 +25 −4 +33 +4 +41 +14 +49 +30 ps
0.5 +29 −6 +37 +4 +45 +20 ps
DQ
slew
rate
(V/ns)
0.4 +30 −11 +38 +5 ps
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
13
[Required time tVAC above VIH(AC) {below VIL(AC)} for valid transition]
DDR3L-1066 (AC160) DDR3L-1600, 1333, 1066 (AC135)
tVAC [ps] tVAC [ps]
Slew rate (V/ns) min. max. min. max.
>2.0 TBD TBD
2.0 TBD TBD
1.5 TBD TBD
1.0 TBD TBD
0.9 TBD TBD
0.8 TBD TBD
0.7 TBD TBD
0.6 TBD TBD
0.5 TBD TBD
<0.5 TBD TBD
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
14
VDD
tIS tIH tIS tIH
VREF to AC
region
VREF to AC
region
DC to VREF
region
DC to VREF
region
nominal
slew rate nominal
slew rate
∆TFS ∆TRH ∆TFH∆TRS
VSS
VIH (AC) min.
VIH (DC) min.
VIL (DC) max.
VIL (AC) max.
VREF (DC)
tVAC
tVAC
CK
/CK
Slew Rate Definition Nominal (CK, /CK)
VDD tDS tDH tDS tDH
/DQS
DQS
VREF to AC
region
VREF to AC
region
DC to VREF
region
DC to VREF
region
nominal
slew rate nominal
slew rate
∆TFS ∆TRH ∆TFH∆TRS
VSS
VIH (AC) min.
VIH (DC) min.
VIL (DC) max.
VIL (AC) max.
VREF (DC)
tVAC
tVAC
Slew Rate Definition Nominal (DQS, /DQS)
VREF (DC)
-
VIL (AC) max.
∆TFS
Setup slew rate
Falling signal
VREF (DC)
-
VIL (DC) max.
∆TRH
Hold slew rate
Rising signal
=
=
VIH (AC) min.
-
VREF (DC)
∆TRS
Setup slew rate
Rising signal
VIH (DC) min.
-
VREF (DC)
∆TFH
Hold slew rate
Falling signal
=
=
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
15
VDD tIS tIH tIS tIH
VREF (DC)
VIH (AC) min.
VIH (DC) min.
VIL (DC) max.
VIL (AC) max.
VSS
VREF to AC
region
VREF to AC
region
DC to VREF
region
DC to VREF
region
nominal
line
nominal
line
nominal
line
nominal
line
tangent
line tangent
line
∆TFS ∆TRH ∆TFH∆TRS
tVAC
tVAC
CK
/CK
Slew Rate Definition Tangent (CK, /CK)
VDD tDS tDH tDS tDH
VREF (DC)
VIH (AC) min.
VIH (DC) min.
VIL (DC) max.
VIL (AC) max.
VSS
VREF to AC
region
VREF to AC
region
DC to VREF
region
DC to VREF
region
nominal
line
nominal
line
nominal
line
nominal
line
tangent
line tangent
line
∆TFS ∆TRH ∆TFH∆TRS
/DQS
DQS
tVAC
tVAC
Slew Rate Definition Tangent (DQS, /DQS)
tangent line [VREF (DC)
-
VIL (AC) max.]
∆TFS
Setup slew rate
Falling signal
tangent line [VREF (DC)
-
VIL (DC) max.]
∆TRH
Hold slew rate
Rising signal
=
=
tangent line [VIH (AC) min.
-
VREF (DC)]
∆TRS
Setup slew rate
Rising signal
tangent line [VIH (DC) min.
-
VREF (DC)]
∆TFH
Hold slew rate
Falling signal
=
=
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
16
AC and DC Logic Input Levels for Differential Signals
Differential signal definition
! "#"
Definition of Differential AC-swing and “time above AC-level” tDVAC
[Differential AC and DC Input Levels]
Parameter Symbol min. typ. max. Unit Notes
Differential input logic high VIHdiff +0.180 *3 V 1
Differential input logic low VILdiff *3 –0.180 V 1
Differential input logic AC VIHdiff (AC) 2 × (VIH (AC) − VREF) *3 V 2
Differential input logic AC VILdiff (AC) *3 2 × (VIL(AC) − VREF) V 2
Notes: 1. Used to define a differential signal slew-rate.
2. For CK, /CK use VIH/VIL(AC) of address/command and VREFCA; for strobes (DQS, /DQS) use
VIH/VIL(AC) of DQs and VREFDQ; if a reduced ac-high or ac-low level is used for a signal group, then
the reduced level applies also here.
3. These values are not defined, however the single ended components of differential signal CK, /CK, DQS,
/DQS to be within the respective limits (VIH(DC) max, VIL(DC)min) for single-ended signals as well as the
limitations for overshoot and undershoot. Refer to Overshoot and Undershoot specifications.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
17
[Required time tDVAC above VIH(AC) {below VIL(AC)} for valid transition]
@[VIH/Ldiff (AC)] = 320mV @[VIH/Ldiff (AC)] = 270mV
tDVAC [ps] tDVAC [ps]
Slew rate (V/ns) min. max. min. max.
>4.0 TBD TBD
4.0 TBD TBD
3.0 TBD TBD
2.0 TBD TBD
1.8 TBD TBD
1.6 TBD TBD
1.4 TBD TBD
1.2 TBD TBD
1.0 TBD TBD
<1.0 TBD TBD
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
18
Single-Ended Requirements for Differential Signals
Each individual component of a differential signal (CK, DQS, /CK, /DQS) has also to comply with certain
requirements for single-ended signals.
CK and /CK have to reach VSEH min. / VSEL max. (approximately equal to the AC-levels (VIH(AC) / VIL(AC)) for
Address/command signals) in every half-cycle.
DQS, /DQS have to reach VSEH min./VSEL max. (approximately equal to the AC-levels (VIH(AC) / VIL(AC)) for DQ
signals) in every half-cycle preceding and following a valid transition.
Note that the applicable ac-levels for Address/command and DQ’s might be different per speed-bin etc. E.g. if VIH
135 (AC)/VIL 135 (AC) is used for Address/command signals, then these ac-levels apply also for the single ended
components of differential CK and /CK.
VSS or VSSQ
VDD or VDDQ
VSEL max.
VSEH min.
VSEH
VSEL
time
VDD/2 or VDDQ/2
CK or DQS
Single-Ended Requirement for Differential Signals.
Note that while Address/command and DQ signal requirements are with respect to VREF, the single-ended
components of differential signals have a requirement with respect to VDD / 2; this is nominally the same. The
transition of single-ended signals through the ac-levels is used to measure setup time. For single-ended components
of differential signals the requirement to reach VSEL max, VSEH min has no bearing on timing, but adds a restriction
on the common mode characteristics of these signals.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
19
[Single-ended levels for CK, DQS, /CK, /DQS]
Parameter Symbol min. typ. max. Unit Notes
Single-ended high level for strobes (VDD/2) + 0.160 *3 V 1, 2
Single-ended high level for CK, /CK
VSEH
(VDD/2) + 0.160 *3 V 1, 2
Single-ended low level for strobes *3 (VDD/2) − 0.160 V 1, 2
Single-ended low level for CK, /CK VSEL *3 (VDD/2) − 0.160 V 1, 2
Notes: 1. For CK, /CK use VIH/VIL(AC) of ADD/CMD; for strobes (DQS, /DQS) use VIH/VIL(AC) of DQs.
2. VIH(AC)/VIL(AC) for DQs is based on VREFDQ; VIH(AC)/VIL(AC) for address/command is based on
VREFCA; if a reduced ac-high or ac-low level is used for a signal group, then the reduced level applies
also here.
3. These values are not defined, however the single ended components of differential signals CK, /CK, DQS,
/DQS need to be within the respective limits (VIH(DC) max, VIL(DC)min) for single-ended signals as well
as the limitations for overshoot and undershoot. Refer to Overshoot and Undershoot specifications.
To guarantee tight setup and hold times as well as output skew parameters with respect to clock and strobe, each
cross point voltage of differential input signals (CK, /CK and DQS, /DQS) must meet the requirements in table below.
The differential input cross point voltage VIX is measured from the actual cross point of true and complement signal
to the midlevel between of VDD and VSS.
VIX
VIX VIX
CK, DQS
VDD
VDD/2
/CK, /DQS
VSS
VSEH VSE
L
VIX Definition
[Cross point voltage for differential input signals (CK, DQS)]
Parameter Symbol pins min. max. Unit Note
Differential input cross point voltage
relative to VDD/2 VIX CK, /CK −150 150 mV 1
VIX DQS, /DQS −150 150 mV 1
Note: 1. The relation between VIX min./max. and VSEL/VSEH should satisfy the following.
VDD/2 +VIX (min.) −VSEL ≥ 25mV
VSEH − ((VDD/2) + VIX (max.)) ≥ 25mV
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
20
[Differential Input Slew Rate Definition]
Measured
Description From To Defined by Applicable for Note
Differential input slew rate for
rising edge
(CK - /CK and DQS - /DQS)
VILdiff (max.) VIHdiff (min.) VIHdiff (min.) – VILdiff (max.)
∆TRdiff
Differential input slew rate for
falling edge
(CK - /CK and DQS - /DQS)
VIHdiff (min.) VILdiff (max.) VIHdiff (min.) – VILdiff (max.)
∆TFdiff
Note: The differential signal (i.e. CK, /CK and DQS, /DQS) must be linear between these thresholds.
∆TRdiff
∆TFdiff
VIHdiff (min.)
−
VILdiff (max.)
∆TFdiff
Falling slew =
VIHdiff(min.)
VILdiff (max.)
0
VIHdiff (min.)
−
VILdiff (max.)
∆TRdiff
Rising slew =
Differential Input Slew Rate Definition for DQS, /DQS and CK, /CK
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
21
AC and DC Output Measurement Levels (TC = 0°C to +85°C, VDD, VDDQ = 1.283V to 1.45V)
Parameter Symbol Specification Unit Notes
DC output high measurement level
(for IV curve linearity) VOH (DC) 0.8 × VDDQ V
DC output middle measurement level
(for IV curve linearity) VOM (DC) 0.5 × VDDQ V
DC output low measurement level
(for IV curve linearity) VOL (DC) 0.2 × VDDQ V
AC output high measurement level
(for output slew rate) VOH (AC) VTT + 0.1 × VDDQ V 1
AC output low measurement level
(for output slew rate) VOL (AC) VTT − 0.1 × VDDQ V 1
AC differential output high measurement
level (for output slew rate) VOHdiff 0.2 × VDDQ V 2
AC differential output low measurement level
(for output slew rate) VOLdiff −0.2 × VDDQ V 2
AC differential cross point voltage VOX (AC) TBD mV
Notes: 1. The swing of ±0.1 × VDDQ is based on approximately 50% of the static single-ended output high or low
swing with a driver impedance of 34Ω and an effective test load of 25Ω to VTT = VDDQ/2 at each of the
differential outputs.
2. The swing of ±0.2 × VDDQ is based on approximately 50% of the static single-ended output high or low
swing with a driver impedance of 34Ω and an effective test load of 25Ω to VTT = VDDQ/2 at each of the
differential outputs.
Output Slew Rate Definitions
[Single-Ended Output Slew Rate Definition]
Measured
Description From To Defined by
Output slew rate for rising edge VOL (AC) VOH (AC) VOH (AC) – VOL (AC)
∆TRse
Output slew rate for falling edge VOH (AC) VOL (AC) VOH (AC) – VOL (AC)
∆TFse
∆TRse
∆TFse
VOH (AC)
−
VOL (AC)
∆TFse
Falling slew =
VOH (AC)
VOL (AC)
VTT
VOH (AC)
−
VOL (AC)
∆TRse
Rising slew =
Output Slew Rate Definition for Single-Ended Signals
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
22
[Differential Output Slew Rate Definition]
Measured
Description From To Defined by
Differential output slew rate for
rising edge VOLdiff (AC) VOHdiff (AC) VOHdiff(AC) – VOLdiff (AC)
∆TRdiff
Differential output slew rate for
falling edge VOHdiff (AC) VOLdiff (AC) VOHdiff (AC) – VOLdiff (AC)
∆TFdiff
∆TRdiff
∆TFdiff
VOHdiff (AC)
−
VOLdiff (AC)
∆TFdiff
Falling slew =
VOHdiff (AC)
VOLdiff (AC)
0
VOHdiff (AC)
−
VOLdiff (AC)
∆TRdiff
Rising slew =
Differential Output Slew Rate Definition for DQS, /DQS and CK, /CK
Output Slew Rate (RON = RZQ/7 setting)
Parameter Symbol Speed min. max. Unit Notes
Output slew rate
(Single-ended) SRQse
DDR3L-1600
DDR3L-1333
DDR3L-1066
1.75 5 V/ns 1
Output slew rate
(Differential) SRQdiff
DDR3L-1600
DDR3L-1333
DDR3L-1066
3.5 12 V/ns
Remark: SR = slew rate. se = single-ended signals. diff = differential signals. Q = Query output
Note: 1. In two cases, a maximum slew rate of 6V/ns applies for a single DQ signal within a byte lane.
(a) is defined for a single DQ signal within a byte lane which is switching into a certain direction (either from
high to low or low to high) while all remaining DQ signals in the same byte lane are static (i.e. they stay at
either high or low).
(b) is defined for a single DQ signal within a byte lane which is switching into a certain direction (either from
high to low or low to high) while all remaining DQ signals in the same byte lane are switching into the
opposite direction (i.e. from low to high or high to low respectively). For the remaining DQ signal
switching into the opposite direction, the regular maximum limit of 5V/ns applies.
Reference Load for AC Timing and Output Slew Rate
25Ω
VDDQ
CK, /CK VTT = VDDQ/2
DUT DQ
DQS,
/DQS
Reference Output Load
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
23
AC Overshoot/Undershoot Specification
Parameter Pins Specification
Maximum peak amplitude allowed for overshoot Command, Address,
CKE, ODT TBD
Maximum peak amplitude allowed for undershoot TBD
Maximum overshoot area above VDD
DDR3L-1600 TBD
DDR3L-1333 TBD
DDR3L-1066 TBD
Maximum undershoot area below VSS
DDR3L-1600 TBD
DDR3L-1333 TBD
DDR3L-1066 TBD
Maximum peak amplitude allowed for overshoot CK, /CK TBD
Maximum peak amplitude allowed for undershoot TBD
Maximum overshoot area above VDD
DDR3L-1600 TBD
DDR3L-1333 TBD
DDR3L-1066 TBD
Maximum undershoot area below VSS
DDR3L-1600 TBD
DDR3L-1333 TBD
DDR3L-1066 TBD
Maximum peak amplitude allowed for overshoot DQ, DQS, /DQS, DM TBD
Maximum peak amplitude allowed for undershoot TBD
Maximum overshoot area above VDDQ
DDR3L-1600 TBD
DDR3L-1333 TBD
DDR3L-1066 TBD
Maximum undershoot area below VSSQ
DDR3L-1600 TBD
DDR3L-1333 TBD
DDR3L-1066 TBD
Maximum amplitude
Overshoot area
Undershoot area
Volts (V)
Time (ns)
VDD, VDDQ
VSS, VSSQ
Overshoot/Undershoot Definition
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
24
Output Driver Impedance
RON will be achieved by the DDR3 SDRAM after proper I/O calibration. Tolerance and linearity requirements are
referred to the Output Driver DC Electrical Characteristics table.
A functional representation of the output buffer is shown in the figure Output Driver: Definition of Voltages and
Currents.
RON is defined by the value of the external reference resistor RZQ as follows:
• RON40 = RZQ/6
• RON34 = RZQ/7
The individual pull-up and pull-down resistors (RONPu and RONPd) are defined as follows:
Parameter Symbol Definition Conditions
Output driver pull-up impedance RONPu VDDQ − VOUT
IOUT RONPd is turned off
Output driver pull-down impedance RONPd VOUT
IOUT RONPu is turned off
VDDQ
VSSQ
V
Out
I
Out
I
Pu
RON
Pu
Chip in Drive Mode
To
other
circuitry
like
RCV,
...
Output Driver
DQ
I
Pd
RON
Pd
Output Driver: Definition of Voltages and Currents
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
25
Output Driver DC Electrical Characteristics
(RZQ = 240Ω, entire operating temperature range; after proper ZQ calibration)
RONnom Resistor VOUT min. nom. max. Unit Notes
40Ω RON40Pd
VOL (DC) = 0.2 × VDDQ
VOM (DC) = 0.5 × VDDQ
VOH (DC) = 0.8 × VDDQ
0.6
0.9
0.9
1.0
1.0
1.0
1.15
1.15
1.45
RZQ/6 1, 2, 3
RON40Pu
VOL (DC) = 0.2 × VDDQ
VOM (DC) = 0.5 × VDDQ
VOH (DC) = 0.8 × VDDQ
0.9
0.9
0.6
1.0
1.0
1.0
1.45
1.15
1.15
RZQ/6 1, 2, 3
34Ω RON34Pd
VOL (DC) = 0.2 × VDDQ
VOM (DC) = 0.5 × VDDQ
VOH (DC) = 0.8 × VDDQ
0.6
0.9
0.9
1.0
1.0
1.0
1.15
1.15
1.45
RZQ/7 1, 2, 3
RON34Pu
VOL (DC) = 0.2 × VDDQ
VOM (DC) = 0.5 × VDDQ
VOH (DC) = 0.8 × VDDQ
0.9
0.9
0.6
1.0
1.0
1.0
1.45
1.15
1.15
RZQ/7 1, 2, 3
Mismatch between pull-up and pull down, MMPuPd VOM (DC) = 0.5 × VDDQ −10 +10 % 1, 2, 4
Notes: 1. The tolerance limits are specified after calibration with stable voltage and temperature.
For the behavior of the tolerance limits if temperature or voltage changes after calibration, see following
section on voltage and temperature sensitivity.
2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ = VSS.
3. Pull-down and pull-up output driver impedances are recommended to be calibrated at 0.5 × VDDQ. Other
calibration schemes may be used to achieve the linearity spec shown above, e.g. calibration at 0.2 ×
VDDQ and 0.8 × VDDQ.
4. Measurement definition for mismatch between pull-up and pull-down, MMPuPd:
Measure RONPu and RONPd, both at 0.5 × VDDQ:
100
RONnom
RONPd - RONPu
MMPuPd ×=
Output Driver Temperature and Voltage Sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen according to the table Output Driver
Sensitivity Definition and Output Driver Voltage and Temperature Sensitivity.
∆T = T − T (@calibration); ∆V= VDDQ − VDDQ (@calibration); VDD = VDDQ
Note: dRONdT and dRONdV are not subject to production test but are verified by design and characterization.
[Output Driver Sensitivity Definition]
min. max. unit
RONPu@VOH (DC) 0.6 − dRONdTH × |∆T| − dRONdVH × |∆V| 1.1 + dRONdTH × |∆T| + dRONdVH × |∆V| RZQ/7
RON@ VOM (DC) 0.9 − dRONdTM × |∆T| − dRONdVM × |∆V| 1.1 + dRONdTM × |∆T| + dRONdVM × |∆V| RZQ/7
RONPd@VOL (DC) 0.6 − dRONdTL × |∆T| − dRONdVL × |∆V| 1.1 + dRONdTL × |∆T| + dRONdVL × |∆V| RZQ/7
[Output Driver Voltage and Temperature Sensitivity]
DDR3L-1600 DDR3L-1333, 1066
min. max. max. Unit
dRONdTM 0 1.5 1.5 %/°C
dRONdVM 0 0.13 0.15 %/mV
dRONdTL 0 1.5 1.5 %/°C
dRONdVL 0 0.13 0.15 %/mV
dRONdTH 0 1.5 1.5 %/°C
dRONdVH 0 0.13 0.15 %/mV
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
26
On-Die Termination (ODT) Levels and I-V Characteristics
On-Die Termination effective resistance RTT is defined by bits A9, A6 and A2 of the MR1 Register.
ODT is applied to the DQ, DM, DQS, /DQS and TDQS, /TDQS (×8 devices only) pins.
A functional representation of the on-die termination is shown in the figure On-Die Termination: Definition of Voltages
and Currents.
The individual pull-up and pull-down resistors (RTTPu and RTTPd) are defined as follows:
Parameter Symbol Definition Conditions
ODT pull-up resistance RTTPu VDDQ − VOUT
IOUT RTTPd is turned off
ODT pull-down resistance RTTPd VOUT
IOUT RTTPu is turned off
VDDQ
VSSQ
V
Out
I
Out
I
Pu
RTT
Pu
Chip in Termination Mode
To
other
circuitry
like
RCV,
...
ODT
DQ
I
Out
= I
Pd
- I
Pu
I
Pd
RTT
Pd
On-Die Termination: Definition of Voltages and Currents
The value of the termination resistor can be set via MRS command to RTT60 = RZQ/4 (nom) or RTT120 = RZQ/2
(nom).
RTT60 or RTT120 will be achieved by the DDR3 SDRAM after proper I/O calibration has been performed.
Tolerances requirements are referred to the ODT DC Electrical Characteristics table.
Measurement Definition for RTT
Apply VIH (AC) to pin under test and measure current I(VIH(AC)), then apply VIL(AC) to pin under test and measure
current I(VIL(AC)) respectively.
))AC(VIL(I))AC(VIH(I
)AC(VIL)AC(VIH
RTT −
−
=
Measurement Definition for ∆VM
Measure voltage (VM) at test pin (midpoint) with no load.
1001 -
VDDQ
VM2
VM ×
×
=∆
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
27
ODT DC Electrical Characteristics
(RZQ = 240Ω, entire operating temperature range; after proper ZQ calibration)
MR1
[A9, A6, A2]
RTT
Resistor
VOUT
min.
nom.
max.
Unit
Notes
[0, 1, 0] 120Ω RTT120Pd240
VOL (DC)
VOM (DC)
VOH (DC)
0.6
0.9
0.9
1.0
1.0
1.0
1.15
1.15
1.45
RZQ 1, 2, 3, 4
RTT120Pu240
VOL (DC)
VOM (DC)
VOH (DC)
0.9
0.9
0.6
1.0
1.0
1.0
1.45
1.15
1.15
RZQ 1, 2, 3, 4
RTT120 VIL (AC) to VIH (AC) 0.9 1.0 1.65 RZQ/2 1, 2, 5
[0, 0, 1] 60Ω RTT60Pd120
VOL (DC)
VOM (DC)
VOH (DC)
0.6
0.9
0.9
1.0
1.0
1.0
1.15
1.15
1.45
RZQ/2 1, 2, 3, 4
RTT60Pu120
VOL (DC)
VOM (DC)
VOH (DC)
0.9
0.9
0.6
1.0
1.0
1.0
1.45
1.15
1.15
RZQ/2 1, 2, 3, 4
RTT60 VIL (AC) to VIH (AC) 0.9 1.0 1.65 RZQ/4 1, 2, 5
[0, 1.1] 40Ω RTT40Pd80
VOL (DC)
VOM (DC)
VOH (DC)
0.6
0.9
0.9
1.0
1.0
1.0
1.15
1.15
1.45
RZQ/3 1, 2, 3, 4
RTT40Pu80
VOL (DC)
VOM (DC)
VOH (DC)
0.9
0.9
0.6
1.0
1.0
1.0
1.45
1.15
1.15
RZQ/3 1, 2, 3, 4
RTT40 VIL (AC) to VIH (AC) 0.9 1.0 1.65 RZQ/6 1, 2, 5
[1, 0, 1] 30Ω RTT30Pd60
VOL (DC)
VOM (DC)
VOH (DC)
0.6
0.9
0.9
1.0
1.0
1.0
1.15
1.15
1.45
RZQ/4 1, 2, 3, 4
RTT30Pu60
VOL (DC)
VOM (DC)
VOH (DC)
0.9
0.9
0.6
1.0
1.0
1.0
1.45
1.15
1.15
RZQ/4 1, 2, 3, 4
RTT30 VIL (AC) to VIH (AC) 0.9 1.0 1.65 RZQ/8 1, 2, 5
[1, 0, 0] 20Ω RTT20Pd40
VOL (DC)
VOM (DC)
VOH (DC)
0.6
0.9
0.9
1.0
1.0
1.0
1.15
1.15
1.45
RZQ/6 1, 2, 3, 4
RTT20Pu40
VOL (DC)
VOM (DC)
VOH (DC)
0.9
0.9
0.6
1.0
1.0
1.0
1.45
1.15
1.15
RZQ/6 1, 2, 3, 4
RTT20 VIL (AC) to VIH (AC) 0.9 1.0 1.65 RZQ/12 1, 2, 5
Deviation of VM w.r.t. VDDQ/2, ∆VM −5 5 % 1, 2, 5, 6
Notes: 1. The tolerance limits are specified after calibration with stable voltage and temperature.
For the behavior of the tolerance limits if temperature or voltage changes after calibration, see following
section on voltage and temperature sensitivity.
2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ = VSS.
3. Pull-down and pull-up output resistors are recommended to be calibrated at 0.5 × VDDQ. Other calibration
schemes may be used to achieve the linearity spec shown above, e.g. calibration at 0.2 × VDDQ and 0.8
× VDDQ.
4. Not a specification requirement, but a design guide line.
5. Measurement Definition for RTT:
Apply VIH (AC) to pin under test and measure current I(VIH(AC)), then apply VIL(AC) to pin under test
and measure current I(VIL(AC)) respectively.
))AC(VIL(I))AC(VIH(I
)AC(VIL)AC(VIH
RTT −
−
=
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
28
6. Measurement Definition for VM and ∆VM:
Measure voltage (VM) at test pin (midpoint) with no load:
1001 -
VDDQ
VM2
VM ×
×
=∆
ODT Temperature and Voltage Sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen according to the table ODT
Sensitivity Definition and ODT Voltage and Temperature Sensitivity.
∆T = T − T (@calibration); ∆V= VDDQ − VDDQ (@calibration); VDD = VDDQ
Note: dRTTdT and dRTTdV are not subject to production test but are verified by design and characterization.
[ODT Sensitivity Definition]
min. max. Unit
RTT 0.9 − dRTTdT × |∆T| - dRTTdV × |∆V| 1.6 + dRTTdT×|∆T| + dRTTdV × |∆V| RZQ/2, 4, 6, 8, 12
[ODT Voltage and Temperature Sensitivity]
min. max. Unit
dRTTdT 0 1.5 %/°C
dRTTdV 0 0.15 %/mV
ODT Timing Definitions
Test Load for ODT Timings
Different than for timing measurements, the reference load for ODT timings are defined in ODT Timing Reference
Load.
RTT = 25Ω
VDDQ
CK, /CK VTT = VSSQ
DUT DQ
DQS,
/DQS
ODT Timing Reference Load
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
29
ODT Measurement Definitions
Definitions for tAON, tAONPD, tAOF, tAOFPD and tADC are provided in the following table and subsequent figures.
Symbol Begin Point Definition End Point Definition Figure
tAON Rising edge of CK - /CK defined by the end point of
ODTLon Extrapolated point at VSSQ Figure a)
tAONPD Rising edge of CK - /CK with ODT being first
registered high Extrapolated point at VSSQ Figure b)
tAOF Rising edge of CK - /CK defined by the end point of
ODTLoff End point: Extrapolated point at VRTT_Nom Figure c)
tAOFPD Rising edge of CK - /CK with ODT being first
registered low End point: Extrapolated point at VRTT_Nom Figure d)
tADC Rising edge of CK - /CK defined by the end point of
ODTLcnw, ODTLcwn4 or ODTLcwn8
End point: Extrapolated point at VRTT_WR and
VRTT_Nom respectively Figure e)
Reference Settings for ODT Timing Measurements
Measurement reference settings are provided in the following Table.
Measured Parameter RTT_Nom Setting RTT_WR Setting VSW1 [V] VSW2 [V] Note
tAON RZQ/4 N/A 0.05 0.10
RZQ/12 N/A 0.10 0.20
tAONPD RZQ/4 N/A 0.05 0.10
RZQ/12 N/A 0.10 0.20
tAOF RZQ/4 N/A 0.05 0.10
RZQ/12 N/A 0.10 0.20
tAOFPD RZQ/4 N/A 0.05 0.10
RZQ/12 N/A 0.10 0.20
tADC RZQ/12 RZQ/2 0.20 0.25
CK
Begin point: Rising edge of CK - /CK
defined by the end point of ODTLon
End point: Extrapolated point at VSSQ
tAON
tSW2
VSW2
VSW1
tSW1
/CK
VSSQ
DQ, DM
DQS, /DQS
TDQS, /TDQS
VTT
VSSQ
a) Definition of tAON
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
30
CK
Begin point: Rising edge of CK - /CK with
ODT being first registered high
End point: Extrapolated point at VSSQ
tAONPD
tSW2
VSW2
VSW1
tSW1
/CK
VSSQ
DQ, DM
DQS, /DQS
TDQS, /TDQS
VTT
VSSQ
b) Definition of tAONPD
CK
Begin point: Rising edge of CK - /CK
defined by the end point of ODTLoff
End point: Extrapolated point at VRTT_Nom
VRTT_Nom
tAOF
tSW2
VSW2 VSW1
tSW1
/CK
DQ, DM
DQS, /DQS
TDQS, /TDQS
VTT
VSSQ
c) Definition of tAOF
Begin point: Rising edge of CK - /CK with
ODT being first registered low
CK
End point: Extrapolated point at VRTT_Nom
VRTT_Nom
tAOFPD
tSW2
VSW2 VSW1
tSW1
/CK
DQ, DM
DQS, /DQS
TDQS, /TDQS
VTT
VSSQ
d) Definition of tAOFPD
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
31
CK
Begin point: Rising edge of CK - /CK
defined by the end point of ODTLcnw Begin point: Rising edge of CK - /CK defined by
the end point of ODTLcwn4 or ODTLcwn8
End point: Extrapolated point at VRTT_Wr
tADC
TSW21
TSW11 VSW2
TSW12
TSW22
VSW1
/CK
tADC
VRTT_Wr
VRTT_Nom VRTT_Nom
DQ, DM
DQS, /DQS
TDQS, /TDQS
End point:
Extrapolated
point at VRTT_Nom
VTT
VSSQ
e) Definition of tADC
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
32
IDD Measurement Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.283V to 1.45V)
In this chapter, IDD and IDDQ measurement conditions such as test load and patterns are defined.
The figure Measurement Setup and Test Load for IDD and IDDQ Measurements shows the setup and test load for
IDD and IDDQ measurements.
• IDD currents (such as IDD0, IDD1, IDD2N, IDD2NT, IDD2P0, IDD2P1, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W,
IDD5B, IDD6, IDD6ET, IDD6TC and IDD7) are measured as time-averaged currents with all VDD balls of the
DDR3 SDRAM under test tied together. Any IDDQ current is not included in IDD currents.
• IDDQ currents (such as IDDQ2NT and IDDQ4R) are measured as time-averaged currents with all VDDQ balls of
the DDR3 SDRAM under test tied together. Any IDD current is not included in IDDQ currents.
Note: IDDQ values cannot be directly used to calculate I/O power of the DDR3 SDRAM. They can be used to
support correlation of simulated I/O power to actual I/O power as outlined in correlation from simulated channel I/O
power to actual channel I/O power supported by IDDQ measurement.
For IDD and IDDQ measurements, the following definitions apply:
• L and 0: VIN ≤ VIL (AC)(max.)
• H and 1: VIN ≥ VIH (AC)(min.)
• FLOATING: is defined as inputs are VREF = VDDQ / 2
• Timings used for IDD and IDDQ measurement-loop patterns are provided in Timings used for IDD and IDDQ
Measurement-Loop Patterns table.
• Basic IDD and IDDQ measurement conditions are described in Basic IDD and IDDQ Measurement Conditions
table.
Note: The IDD and IDDQ measurement-loop patterns need to be executed at least one time before actual IDD or
IDDQ measurement is started.
• Detailed IDD and IDDQ measurement-loop patterns are described in IDD0 Measurement-Loop Pattern table
through IDD7 Measurement-Loop Pattern table.
• IDD Measurements are done after properly initializing the DDR3 SDRAM. This includes but is not limited to setting.
RON = RZQ/7 (34 Ω in MR1);
Qoff = 0B (Output Buffer enabled in MR1);
RTT_Nom = RZQ/6 (40 Ω in MR1);
RTT_WR = RZQ/2 (120 Ω in MR2);
TDQS Feature disabled in MR1
• Define D = {/CS, /RAS, /CAS, /WE} : = {H, L, L, L}
• Define /D = {/CS, /RAS, /CAS, /WE} : = {H, H, H, H}
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
33
IDD
IDDQ
VDDQ/2
DDR3
SDRAM
VDD VDDQ
VSS VSSQ
CKE
/CS
/RAS, /CAS, /WE
Address, BA
ODT
ZQ
RTT = 25Ω
/RESET
CK, /CK DQS, /DQS,
DQ, DM,
TDQS, /TDQS
Measurement Setup and Test Load for IDD and IDDQ Measurements
Application specific
memory channel
environment
Channel
I/O power
simulation
Channel I/O power
number
Correction
Correlation
IDDQ
measurement
IDDQ
simulation
IDDQ
Test load
Correlation from Simulated Channel I/O Power to Actual Channel I/O Power
Supported by IDDQ Measurement.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
34
Timings used for IDD and IDDQ Measurement-Loop Patterns
DDR3L-1600 DDR3L-1333 DDR3L-1066
Parameter 11-11-11 9-9-9 7-7-7 Unit
CL 11 9 7 nCK
tCK min. 1.25 1.5 1.875 ns
nRCD min. 11 9 7 nCK
nRC min. 39 33 27 nCK
nRAS min. 28 24 20 nCK
nRP min. 11 9 7 nCK
nFAW 24 20 20 nCK
nRRD 5 4 4 nCK
nRFC 128 107 86 nCK
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
35
Basic IDD and IDDQ Measurement Conditions
Parameter Symbol Description
Operating one bank
active precharge
current
IDD0
CKE: H; External clock: on; tCK, nRC, nRAS, CL: see Timings used for IDD and IDDQ
Measurement-Loop Patterns table; BL: 8*1; AL: 0; /CS: H between ACT and PRE;
Command, address, bank address inputs: partially toggling according to
IDD0 Measurement-Loop Pattern table; Data I/O: FLOATING; DM: stable at 0;
Bank activity: cycling with one bank active at a time: 0,0,1,1,2,2,... (see IDD0 Measurement-
Loop Pattern table); Output buffer and RTT: enabled in MR*2; ODT signal: stable at 0;
Pattern details: see IDD0 Measurement-Loop Pattern table
Operating one bank
active-read-precharge
current
IDD1
CKE: H; External clock: On; tCK, nRC, nRAS, nRCD, CL: see Timings used for IDD and
IDDQ Measurement-Loop Patterns table; BL: 8*1, 6; AL: 0; /CS: H between ACT, READ and
PRE; Command, address, bank address inputs, data I/O: partially toggling according to IDD1
Measurement-Loop Pattern table;
DM: stable at 0; Bank activity: cycling with one bank active at a time: 0,0,1,1,2,2,...
(see IDD1 Measurement-Loop Pattern table); Output buffer and RTT: enabled in MR*2; ODT
Signal: stable at 0; Pattern details: see IDD1 Measurement-Loop
Pattern table
Precharge standby
current IDD2N
CKE: H; External clock: on; tCK, CL: see Timings used for IDD and IDDQ Measurement-
Loop patterns table BL: 8*1; AL: 0; /CS: stable at 1;
Command, address, bank address Inputs: partially toggling according to IDD2N and IDD3N
Measurement-Loop Pattern table; data I/O: FLOATING; DM: stable at 0; bank activity: all
banks closed; output buffer and RTT: enabled in mode registers*2; ODT signal: stable at 0;
pattern details: see IDD2N and IDD3N Measurement-Loop Pattern table
Precharge standby
ODT current
IDD2NT
CKE: H; External clock: on; tCK, CL: see Timings used for IDD and IDDQ Measurement-
Loop Patterns table; BL: 8*1; AL: 0; /CS: stable at 1;
Command, address, bank address Inputs: partially toggling according to IDD2NT and
IDDQ2NT Measurement-Loop Pattern table; data I/O: FLOATING; DM: stable
at 0; bank activity: all banks closed; output buffer and RTT: enabled in MR*2; ODT signal:
toggling according to IDD2NT and IDDQ2NT Measurement-Loop pattern table; pattern
details: see IDD2NT and IDDQ2NT Measurement-Loop Pattern table
Precharge standby
ODT IDDQ current IDDQ2NT Same definition like for IDD2NT, however measuring IDDQ current instead of IDD current
Precharge power-down
current slow exit IDD2P0
CKE: L; External clock: on; tCK, CL: see Timings used for IDD and IDDQ Measurement-
Loop Patterns table; BL: 8*1; AL: 0; /CS: stable at 1;
Command, address, bank address inputs: stable at 0; data I/O: FLOATING; DM: stable at 0;
bank activity: all banks closed; output buffer and RTT: EMR *2; ODT signal: stable at 0;
precharge power down mode: slow exit*3
Precharge power-down
current fast exit IDD2P1
CKE: L; External clock: on; tCK, CL: see Timings used for IDD and IDDQ Measurement-
Loop Patterns table; BL: 8*1; AL: 0; /CS: stable at 1;
Command, address, bank address Inputs: stable at 0; data I/O: FLOATING; DM:stable at 0;
bank activity: all banks closed; output buffer and RTT: enabled in MR*2; ODT signal: stable
at 0; precharge power down mode: fast exit*3
Precharge quiet
standby current IDD2Q
CKE: H; External clock: On; tCK, CL: see Timings used for IDD and IDDQ Measurement-
Loop Patterns table; BL: 8*1; AL: 0; /CS: stable at 1;
Command, address, bank address Inputs: stable at 0; data I/O: FLOATING;
DM: stable at 0;bank activity: all banks closed; output buffer and RTT: enabled in MR*2; ODT
signal: stable at 0
Active standby current IDD3N
CKE: H; External clock: on; tCK, CL: see Table Timings used for IDD and IDDQ
Measurement-Loop Patterns table; BL: 8*1; AL: 0; /CS: stable at 1;
Command, address, bank address Inputs: partially toggling according to IDD2N and IDD3N
Measurement-Loop Pattern; data I/O: FLOATING; DM: stable at 0;
bank activity: all banks open; output buffer and RTT: enabled in MR*2;
ODT signal: stable at 0; pattern details: see IDD2N and IDD3N
Measurement-Loop Pattern table
Active power-down
current IDD3P
CKE: L; External clock: on; tCK, CL: see Table Timings used for IDD and IDDQ
Measurement-Loop Patterns table; BL: 8*1; AL: 0; /CS: stable at 1;
Command, address, bank address inputs: stable at 0; data I/O: FLOATING;
DM:stable at 0; bank activity: all banks open; output buffer and RTT:
enabled in MR*2; ODT signal: stable at 0
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
36
Parameter Symbol Description
Operating burst read
current IDD4R
CKE: H; External clock: on; tCK, CL: see Timings used for IDD and IDDQ Measurement-
Loop Patterns table; BL: 8*1, 6; AL: 0; /CS: H between
READ; Command, address, bank address Inputs: partially toggling according to IDD4R and
IDDQ4R Measurement-Loop Pattern table; data I/O: seamless read
data burst with different data between one burst and the next one according to
IDD4R and IDDQ4R Measurement-Loop Pattern table; DM: stable at 0;
bank activity: all banks open, READ commands cycling through banks: 0,0,1,1,2,2,... (see
IDD4R and IDDQ4R Measurement-Loop Pattern table); Output buffer and RTT: enabled in
MR*2; ODT signal: stable at 0; pattern details: see IDD4R and IDDQ4R Measurement-Loop
Pattern table
Operating burst read
IDDQ current IDDQ4R Same definition like for IDD4R, however measuring IDDQ current instead of IDD current
Operating burst write current IDD4W
CKE: H; External clock: on; tCK, CL: see Timings used for IDD and IDDQ Measurement-
Loop Patterns table; BL: 8*1; AL: 0; /CS: H between WR; command, address, bank address
inputs: partially toggling according to IDD4W
Measurement-Loop Pattern table; data I/O: seamless write data burst with
different data between one burst and the next one according to IDD4W Measurement-Loop
Pattern table; DM: stable at 0; bank activity: all banks open,
WR commands cycling through banks: 0,0,1,1,2,2,.. (see IDD4W Measurement-Loop
Pattern table); Output buffer and RTT: enabled in MR*2; ODT signal: stable
at H; pattern details: see IDD4W Measurement-Loop Pattern table
Burst refresh current IDD5B
CKE: H; External clock: on; tCK, CL, nRFC: see Timings used for IDD and IDDQ
Measurement-Loop Patterns table; BL: 8*1; AL: 0; /CS: H between REF;
Command, address, bank address Inputs: partially toggling according to IDD5B
Measurement-Loop Pattern table; data I/O: FLOATING; DM: stable at 0;
bank activity: REF command every nRFC (IDD5B Measurement-Loop Pattern); output
buffer and RTT: enabled in MR*2; ODT signal: stable at 0; pattern
details: see IDD5B Measurement-Loop Pattern table
Self-refresh current: normal
temperature range IDD6
TC: 0 to 85°C; ASR: disabled*4; SRT:
Normal*5; CKE: L; External clock: off; CK and /CK: L; CL: see Timings used for
IDD and IDDQ Measurement-Loop Patterns table; BL: 8*1;
AL: 0; /CS, command, address, bank address, data I/O: FLOATING; DM: stable
at 0; bank activity: Self-refresh operation; output buffer and RTT: enabled in MR*2; ODT
signal: FLOATING
Self-refresh current:
extended temperature range IDD6ET
TC: 0 to 95°C; ASR: Disabled*4; SRT: Extended*5; CKE: L; External clock: off; CK and /CK:
L; CL: see Timings used for IDD and IDDQ Measurement-Loop Patterns table; BL: 8*1; AL:
0; /CS, command, address, bank address, data I/O: FLOATING;
DM: stable at 0; bank activity: Extended temperature self-refresh operation; output buffer
and RTT: enabled in MR*2; ODT signal: FLOATING
Auto self-refresh current
(Optional) IDD6TC
TC: 0 to 95°C; ASR: Enabled*4; SRT: Normal*5; CKE: L; External clock: off;
CK and /CK: L; CL: see Table Timings used for IDD and IDDQ Measurement-Loop
Patterns table; BL: 8*1; AL: 0; /CS, command, address, bank address, data I/O: FLOATING;
DM: stable at 0; bank activity: Auto self-refresh operation; output buffer and RTT: enabled
in MR*2; ODT signal: FLOATNG
Operating bank interleave
read current IDD7
CKE: H; External clock: on; tCK, nRC, nRAS, nRCD, nRRD, nFAW, CL: see Timings used
for IDD and IDDQ Measurement-Loop Patterns table;
BL: 8*1, 6; AL: CL-1; /CS: H between ACT and READA; Command, address, bank address
Inputs: partially toggling according to IDD7 Measurement-Loop Pattern table; data I/O: read
data bursts with different data between one burst and the next one according to IDD7
Measurement-Loop Pattern table; DM: stable at 0; bank activity: two times interleaved
cycling through banks (0, 1, …7) with different addressing, see IDD7 Measurement-Loop
Pattern table; output buffer and RTT: enabled in MR*2; ODT signal: stable at 0; pattern
details: see IDD7 Measurement-Loop Pattern table
RESET low current IDD8
/RESET: low; External clock: off; CK and /CK: low; CKE: FLOATING; /CS, command,
address, bank address, Data IO: FLOATING; ODT signal: FLOATING
RESET low current reading is valid once power is stable and /RESET has been low for at
least 1ms.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
37
Notes: 1. Burst Length: BL8 fixed by MRS: MR0 bits [1,0] = [0,0].
2. MR: Mode Register
Output buffer enable: set MR1 bit A12 = 1 and MR1 bits [5, 1] = [0,1];
RTT_Nom enable: set MR1 bits [9, 6, 2] = [0, 1, 1]; RTT_WR enable: set MR2 bits [10, 9] = [1,0].
3. Precharge power down mode: set MR0 bit A12= 0 for Slow Exit or MR0 bit A12 = 1 for fast exit.
4. Auto self-refresh (ASR): set MR2 bit A6 = 0 to disable or 1 to enable feature.
5. Self-refresh temperature range (SRT): set MR0 bit A7= 0 for normal or 1 for extended temperature range.
6. Read burst type: nibble sequential, set MR0 bit A3 = 0.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
38
IDD0 Measurement-Loop Pattern
Notes: 1. DM must be driven low all the time. DQS, /DQS are FLOATING.
2. DQ signals are FLOATING.
3. BA: BA0 to BA2.
CK,
/CK
CKE
Sub
-Loop
Cycle
number
Com-
mand
/CS
/RAS
/CAS
/WE
ODT
BA*3
A11
-A14
A10
A7
-A9
A3
-A6
A0
-A2 Data*2
0 ACT 0 0 1 1 0 0 0 0 0 0 0
1, 2 D, D 1 0 0 0 0 0 0 0 0 0 0
3, 4 /D, /D 1 1 1 1 0 0 0 0 0 0 0
… Repeat pattern 1…4 until nRAS − 1, truncate if necessary
nRAS PRE 0 0 1 0 0 0 0 0 0 0 0
… Repeat pattern 1...4 until nRC − 1, truncate if necessary
1 × nRC
+ 0 ACT 0 0 1 1 0 0 0 0 0 F 0
1 × nRC
+1, 2, D, D 1 0 0 0 0 0 0 0 0 F 0
1 × nRC
+ 3, 4 /D, /D 1 1 1 1 0 0 0 0 0 F 0
… Repeat pattern nRC + 1,...,4 until 1 × nRC + nRAS − 1, truncate if necessary
1 × nRC
+ nRAS PRE 0 0 1 0 0 0 0 0 0 F 0
0
... Repeat nRC + 1,...,4 until 2 × nRC − 1, truncate if necessary
1 2 × nRC Repeat Sub-Loop 0, use BA= 1 instead
2 4 × nRC Repeat Sub-Loop 0, use BA= 2 instead
3 6 × nRC Repeat Sub-Loop 0, use BA= 3 instead
4 8 × nRC Repeat Sub-Loop 0, use BA= 4 instead
5 10 × nRC Repeat Sub-Loop 0, use BA= 5 instead
6 12 × nRC Repeat Sub-Loop 0, use BA= 6 instead
Toggling Static H
7 14 × nRC Repeat Sub-Loop 0, use BA= 7 instead
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
39
IDD1 Measurement-Loop Pattern
Notes: 1. DM must be driven low all the time. DQS, /DQS are used according to read commands, otherwise
FLOATING.
2. Burst sequence driven on each DQ signal by read command. Outside burst operation, DQ signals
are FLOATING.
3. BA: BA0 to BA2.
CK,
/CK
CKE
Sub
-Loop
Cycle
number
Com-
mand
/CS
/RAS
/CAS
/WE
ODT
BA*3
A11
-A14
A10
A7
-A9
A3
-A6
A0
-A2 Data*2
0 ACT 0 0 1 1 0 0 0 0 0 0 0
1, 2 D, D 1 0 0 0 0 0 0 0 0 0 0
3, 4 /D, /D 1 1 1 1 0 0 0 0 0 0 0
… Repeat pattern 1...4 until nRCD − 1, truncate if necessary
nRCD READ 0 1 0 1 0 0 0 0 0 0 0 00000000
… Repeat pattern 1...4 until nRAS − 1, truncate if necessary
nRAS PRE 0 0 1 0 0 0 0 0 0 0 0
… Repeat pattern 1...4 until nRC − 1, truncate if necessary
1 × nRC
+ 0 ACT 0 0 1 1 0 0 0 0 0 F 0
1 × nRC
+ 1, 2 D, D 1 0 0 0 0 0 0 0 0 F 0
1 × nRC
+ 3, 4 /D, /D 1 1 1 1 0 0 0 0 0 F 0
... Repeat pattern nRC + 1,..., 4 until nRC + nRCD − 1, truncate if necessary
1 × nRC
+ nRCD READ 0 1 0 1 0 0 0 0 0 F 0 00110011
... Repeat pattern nRC + 1,..., 4 until nRC +nRAS − 1, truncate if necessary
1 × nRC
+ nRAS PRE 0 0 1 0 0 0 0 0 0 F 0
0
… Repeat pattern nRC + 1,..., 4 until 2 * nRC − 1, truncate if necessary
1 2 × nRC Repeat Sub-Loop 0, use BA= 1 instead
2 4 × nRC Repeat Sub-Loop 0, use BA= 2 instead
3 6 × nRC Repeat Sub-Loop 0, use BA= 3 instead
4 8 × nRC Repeat Sub-Loop 0, use BA= 4 instead
5 10 × nRC Repeat Sub-Loop 0, use BA= 5 instead
6 12 × nRC Repeat Sub-Loop 0, use BA= 6 instead
Toggling Static H
7 14 × nRC Repeat Sub-Loop 0, use BA= 7 instead
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
40
IDD2N and IDD3N Measurement-Loop Pattern
Notes: 1. DM must be driven low all the time. DQS, /DQS are FLOATING.
2. DQ signals are FLOATING.
3. BA: BA0 to BA2.
IDD2NT and IDDQ2NT Measurement-Loop Pattern
Notes: 1. DM must be driven low all the time. DQS, /DQS are FLOATING.
2. DQ signals are FLOATING.
3. BA: BA0 to BA2.
CK,
/CK
CKE
Sub
-Loop
Cycle
number
Com-
mand
/CS
/RAS
/CAS
/WE
ODT
BA*3
A11
-A14
A10
A7
-A9
A3
-A6
A0
-A2 Data*2
0 D 1 0 0 0 0 0 0 0 0 0 0
1 D 1 0 0 0 0 0 0 0 0 0 0
2 /D 1 1 1 1 0 0 0 0 0 F 0
0
3 /D 1 1 1 1 0 0 0 0 0 F 0
1 4 to 7 Repeat Sub-Loop 0, use BA= 1 instead
2 8 to 11 Repeat Sub-Loop 0, use BA= 2 instead
3 12 to 15 Repeat Sub-Loop 0, use BA= 3 instead
4 16 to 19 Repeat Sub-Loop 0, use BA= 4 instead
5 20 to 23 Repeat Sub-Loop 0, use BA= 5 instead
6 24 to 27 Repeat Sub-Loop 0, use BA= 6 instead
Toggling Static H
7 28 to 31 Repeat Sub-Loop 0, use BA= 7 instead
CK,
/CK
CKE
Sub
-Loop
Cycle
number
Com-
mand
/CS
/RAS
/CAS
/WE
ODT
BA*3
A11
-A14
A10
A7
-A9
A3
-A6
A0
-A2 Data*2
0 D 1 0 0 0 0 0 0 0 0 0 0
1 D 1 0 0 0 0 0 0 0 0 0 0
2 /D 1 1 1 1 0 0 0 0 0 F 0
0
3 /D 1 1 1 1 0 0 0 0 0 F 0
1 4 to 7 Repeat Sub-Loop 0, but ODT = 0 and BA= 1
2 8 to 11 Repeat Sub-Loop 0, but ODT = 1 and BA= 2
3 12 to 15 Repeat Sub-Loop 0, but ODT = 1 and BA= 3
4 16 to 19 Repeat Sub-Loop 0, but ODT = 0 and BA= 4
5 20 to 23 Repeat Sub-Loop 0, but ODT = 0 and BA= 5
6 24 to 27 Repeat Sub-Loop 0, but ODT = 1 and BA= 6
Toggling Static H
7 28 to 31 Repeat Sub-Loop 0, but ODT = 1 and BA= 7
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
41
IDD4R and IDDQ4R Measurement-Loop Pattern
Notes: 1. DM must be driven low all the time. DQS, /DQS are used according to read commands, otherwise
FLOATING.
2. Burst sequence driven on each DQ signal by read command. Outside burst operation, DQ signals
are FLOATING.
3. BA: BA0 to BA2.
CK,
/CK
CKE
Sub
-Loop
Cycle
number
Com-
mand
/CS
/RAS
/CAS
/WE
ODT
BA*3
A11
-A14
A10
A7
-A9
A3
-A6
A0
-A2 Data*2
0 READ 0 1 0 1 0 0 0 0 0 0 0 00000000
1 D 1 0 0 0 0 0 0 0 0 0 0
2, 3 /D, /D 1 1 1 1 0 0 0 0 0 0 0
4 READ 0 1 0 1 0 0 0 0 0 F 0 00110011
5 D 1 0 0 0 0 0 0 0 0 F 0
0
6, 7 /D, /D 1 1 1 1 0 0 0 0 0 F 0
1 8 to 15 Repeat Sub-Loop 0, but BA= 1
2 16 to 23 Repeat Sub-Loop 0, but BA= 2
3 24 to 31 Repeat Sub-Loop 0, but BA= 3
4 32 to 39 Repeat Sub-Loop 0, but BA= 4
5 40 to 47 Repeat Sub-Loop 0, but BA= 5
6 48 to 55 Repeat Sub-Loop 0, but BA= 6
Toggling Static H
7 56 to 63 Repeat Sub-Loop 0, but BA= 7
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
42
IDD4W Measurement-Loop Pattern
Notes: 1. DM must be driven low all the time. DQS, /DQS are used according to write commands, otherwise
FLOATING.
2. Burst sequence driven on each DQ signal by write command. Outside burst operation, DQ signals are
FLOATING.
3. BA: BA0 to BA2.
IDD5B Measurement-Loop Pattern
Notes: 1. DM must be driven low all the time. DQS, /DQS are FLOATING.
2. DQ signals are FLOATING.
3. BA: BA0 to BA2.
CK,
/CK
CKE
Sub
-Loop
Cycle
number
Com-
mand
/CS
/RAS
/CAS
/WE
ODT
BA*3
A11
-A14
A10
A7
-A9
A3
-A6
A0
-A2 Data*2
0 WRIT 0 1 0 0 1 0 0 0 0 0 0 00000000
1 D 1 0 0 0 1 0 0 0 0 0 0
2, 3 /D, /D 1 1 1 1 1 0 0 0 0 0 0
4 WRIT 0 1 0 0
1 0 0 0 0 F 0 00110011
5 D 1 0 0 0 1 0 0 0 0 F 0
0
6, 7 /D, /D 1 1 1 1 1 0 0 0 0 F 0
1 8 to 15 Repeat Sub-Loop 0, but BA= 1
2 16 to 23 Repeat Sub-Loop 0, but BA= 2
3 24 to 31 Repeat Sub-Loop 0, but BA= 3
4 32 to 39 Repeat Sub-Loop 0, but BA= 4
5 40 to 47 Repeat Sub-Loop 0, but BA= 5
6 48 to 55 Repeat Sub-Loop 0, but BA= 6
Toggling Static H
7 56 to 63 Repeat Sub-Loop 0, but BA= 7
CK,
/CK
CKE
Sub
-Loop
Cycle
number
Com-
mand
/CS
/RAS
/CAS
/WE
ODT
BA*3
A11
-A14
A10
A7
-A9
A3
-A6
A0
-A2 Data*2
0 REF 0 0 0 1 0 0 0 0 0 0 0
1, 2 D 1 0 0 0 0 0 0 0 0 0 0
0
3, 4 /D, /D 1 1 1 1 0 0 0 0 0 F 0
5 to 8 Repeat cycles 1...4, but BA= 1
9 to 12 Repeat cycles 1...4, but BA= 2
13 to 16 Repeat cycles 1...4, but BA= 3
17 to 20 Repeat cycles 1...4, but BA= 4
21 to 24 Repeat cycles 1...4, but BA= 5
25 to 28 Repeat cycles 1...4, but BA= 6
1
29 to 32 Repeat cycles 1...4, but BA= 7
Toggling Static H
2 33 to
nRFC − 1 Repeat Sub-Loop 1, until nRFC − 1. Truncate, if necessary.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
43
IDD7 Measurement-Loop Pattern
CK,
/CK
CKE
Sub
-Loop
Cycle
number
Com-
mand
/CS
/RAS
/CAS
/WE
ODT
BA*3
A11
-A14
A10
A7
-A9
A3
-A6
A0
-A2 Data*2
0 ACT 0 0 1 1 0 0 0 0 0 0 0
1 READA 0 1 0 1 0 0 0 1 0 0 0 00000000
2 D 1 0 0 0 0 0 0 0 0 0 0
0
… Repeat above D Command until nRRD − 1
nRRD ACT 0 0 1 1 0 1 0 0 0 F 0
nRRD + 1 READA 0 1 0 1 0 1 0 1 0 F 0 00110011
nRRD + 2 D 1 0 0 0 0 1 0 0 0 F 0
1
… Repeat above D Command until 2 × nRRD - 1
2 2 × nRRD Repeat Sub-Loop 0, but BA= 2
3 3 × nRRD Repeat Sub-Loop 1, but BA= 3
D 1 0 0 0 0 3 0 0 0 F 0
4 4 × nRRD
Assert and repeat above D Command until nFAW - 1, if necessary
5 nFAW Repeat Sub-Loop 0, but BA= 4
6 nFAW
+ nRRD Repeat Sub-Loop 1, but BA= 5
7 nFAW
+ 2 × nRRD Repeat Sub-Loop 0, but BA= 6
8 nFAW
+ 3 × nRRD Repeat Sub-Loop 1, but BA= 7
D 1 0 0 0 0 7 0 0 0 F 0
9 nFAW
+ 4nRRD Assert and repeat above D Command until 2 × nFAW - 1, if necessary
2 × nFAW
+ 0 ACT 0 0 1 1 0 0 0 0 0 F 0
2 × nFAW
+ 1 READA 0 1 0 1 0 0 0 1 0 F 0 00110011
D 1 0 0 0 0 0 0 0 0 F 0
10
2 × nFAW
+ 2 Repeat above D Command until 2 × nFAW + nRRD - 1
2 × nFAW
+ nRRD ACT 0 0 1 1 0 1 0 0 0 0 0
2 × nFAW
+ nRRD + 1 READA 0 1 0 1 0 1 0 1 0 0 0 00000000
D 1 0 0 0 0 1 0 0 0 0 0
11
2 × nFAW
+ nRRD + 2 Repeat above D Command until 2 × nFAW + 2 × nRRD − 1
12 2 × nFAW
+2 × nRRD Repeat Sub-Loop 10, but BA= 2
13 2 × nFAW
+ 3 × nRRD Repeat Sub-Loop 11, but BA= 3
D 1 0 0 0 0 3 0 0 0 0 0
14 2 × nFAW
+ 4 × nRRD Assert and repeat above D Command until 3 × nFAW − 1, if necessary
15 3 × nFAW Repeat Sub-Loop 10, but BA= 4
16 3 ×nFAW
+nRRD Repeat Sub-Loop 11, but BA= 5
17 3 × nFAW
+ 2 × nRRD Repeat Sub-Loop 10, but BA= 6
18 3 × nFAW
+ 3 × nRRD Repeat Sub-Loop 11, but BA= 7
D 1 0 0 0 0 7 0 0 0 0 0
Toggling Static H
19 3 × nFAW
+ 4 × nRRD Assert and repeat above D Command until 4 × nFAW − 1, if necessary
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
44
Notes: 1. DM must be driven low all the time. DQS, /DQS are used according to read commands, otherwise
FLOATING.
2. Burst sequence driven on each DQ signal by read command. Outside burst operation,
DQ signals are FLOATING.
3. BA: BA0 to BA2.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
45
Electrical Specifications
DC Characteristics 1 (TC = 0°C to +85°C, VDD, VDDQ = 1.283V to 1.45V)
× 4 × 8
Parameter Symbol Data rate (Mbps) max. max. Unit Notes
Operating current
(ACT-PRE) IDD0
1600
1333
1066
55
50
45
55
50
45
mA
Operating current
(ACT-READ-PRE) IDD1
1600
1333
1066
65
60
55
65
60
55
mA
IDD2P1
1600
1333
1066
20
18
18
20
18
18
mA Fast PD Exit
Precharge power-down standby
current
IDD2P0
1600
1333
1066
12
12
12
12
12
12
mA Slow PD Exit
Precharge standby current IDD2N
1600
1333
1066
33
30
27
33
30
27
mA
Precharge standby
ODT current IDD2NT
1600
1333
1066
33
30
27
33
30
27
mA
Precharge quiet standby current IDD2Q
1600
1333
1066
33
30
27
33
30
27
mA
Active power-down current
(Always fast exit) IDD3P
1600
1333
1066
30
27
27
30
27
27
mA
Active standby current IDD3N
1600
1333
1066
43
40
37
43
40
37
mA
Operating current
(Burst read operating) IDD4R
1600
1333
1066
105
95
85
110
100
90
mA
Operating current
(Burst write operating) IDD4W
1600
1333
1066
110
100
90
115
105
95
mA
Burst refresh current IDD5B
1600
1333
1066
175
170
170
175
170
170
mA
All bank interleave read current IDD7
1600
1333
1066
175
165
145
180
170
150
mA
RESET low current IDD8 12 12 mA
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
46
Self-Refresh Current (TC = 0°C to +85°C, VDD, VDDQ = 1.283V to 1.45V)
× 4 × 8
Parameter Symbol Grade max. max. Unit Notes
Self-refresh current
normal temperature range IDD6 12 12 mA
Self-refresh current
extended temperature range IDD6ET 18 18 mA
Auto self-refresh current
(Optional) IDD6TC mA
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
47
Pin Capacitance (TC = 25°C, VDD, VDDQ = 1.283V to 1.45V)
Parameter Symbol Pins min. max. Unit Notes
Input pin capacitance, CK and /CK
DDR3L-1600, 1333 0.8 1.4 pF 1, 3
DDR3L-1066
CCK
0.8 1.6 pF 1, 3
Delta input pin capacitance, CK and /CK CDCK
CK, /CK
0 0.15 pF 1, 2
Input pin capacitance, control pins
DDR3L-1600, 1333 0.75 1.3 pF 1
DDR3L-1066
CIN_CTRL /CS, CKE, ODT
0.75 1.3 pF 1
Input pin capacitance, address and
command pins
DDR3L-1600, 1333
0.75 1.3 pF 1
DDR3L-1066
CIN_ADD_CMD /RAS, /CAS, /WE,
Address
0.75 1.3 pF 1
Delta input pin capacitance, control pins
DDR3L-1600, 1333 −0.4 0.2 pF 1, 4
DDR3L-1066
CDIN_CTRL /CS, CKE, ODT −0.5 0.3 pF 1, 4
Delta input pin capacitance, address and
command pins
DDR3L-1600, 1333
−0.4 0.4 pF 1, 5
DDR3L-1066
CDIN_ADD_CMD /RAS, /CAS, /WE,
Address −0.5 0.5 pF 1, 5
Input/output pin capacitance
DDR3L-1600, 1333 1.5 2.3 pF 1, 6
DDR3L-1066
CIO
1.5 2.5 pF 1, 6
Delta input/output pin capacitance CDIO
DQ, DQS, /DQS,
TDQS, /TDQS, DM
−0.5 0.3 pF 1, 7, 8
Delta input/output pin capacitance
DDR3L-1600, 1333 0 0.15 pF 1, 10
DDR3L-1066
CDDQS DQS, /DQS
0 0.2 pF 1, 10
Input/output pin capacitance of ZQ CZQ ZQ 3 pF 1, 9
Notes: 1. VDD, VDDQ, VSS, VSSQ applied and all other pins (except the pin under test) floating.
VDD = VDDQ =1.35V, VBIAS=VDD/2.
2. Absolute value of CCK(CK-pin) − CCK(/CK-pin).
3. CCK (min.) will be equal to CIN (min.)
4. CDIN_CTRL = CIN_CTRL − 0.5 × (CCK(CK-pin) + CCK(/CK-pin))
5. CDIN_ADD_CMD = CIN_ADD_CMD − 0.5 × (CCK(CK-pin) + CCK(/CK-pin))
6. Although the DM, TDQS and /TDQS pins have different functions, the loading matches DQ and DQS.
7. DQ should be in high impedance state.
8. CDIO = CIO (DQ, DM) −0.5 × (CIO(DQS-pin) + CIO(/DQS-pin)).
9. Maximum external load capacitance on ZQ pin: 5pF.
10. Absolute value of CIO(DQS) − CIO(/DQS).
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
48
Standard Speed Bins
[DDR3L-1600 Speed Bins]
Speed Bin DDR3L-1600K
CL-tRCD-tRP 11-11-11
Symbol
/CAS write
latency
min.
max.
Unit
Notes
tAA 13.125 20 ns 9
tRCD 13.125 ns 9
tRP 13.125 ns 9
tRC 48.125 ns 9
tRAS 35 9 × tREFI ns 8
tCK (avg) @CL=5 CWL = 5 3.0 3.3 ns 1, 2, 3, 4, 7
CWL = 6, 7, 8 Reserved Reserved ns 4
tCK (avg) @CL=6 CWL = 5 2.5 3.3 ns 1, 2, 3, 7
CWL = 6 Reserved Reserved ns 4
CWL = 7, 8 Reserved Reserved ns 4
tCK (avg) @CL=7 CWL = 5 Reserved Reserved ns 4
CWL = 6 1.875 < 2.5 ns 1, 2, 3, 4, 7
CWL = 7 Reserved Reserved ns 4
CWL = 8 Reserved Reserved ns 4
tCK (avg) @CL=8 CWL = 5 Reserved Reserved ns 4
CWL = 6 1.875 < 2.5 ns 1, 2, 3, 7
CWL = 7 Reserved Reserved ns 4
CWL = 8 Reserved Reserved ns 4
tCK (avg) @CL=9 CWL = 5, 6 Reserved Reserved ns 4
CWL= 7 1.5 < 1.875 ns 1, 2, 3, 4, 7
CWL= 8 Reserved Reserved ns 4
tCK (avg) @CL=10 CWL = 5, 6 Reserved Reserved ns 4
CWL= 7 1.5 < 1.875 ns 1, 2, 3, 7
CWL= 8 Reserved Reserved ns 4
tCK (avg) @CL=11 CWL = 5, 6, 7 Reserved Reserved ns 4
CWL= 8 1.25 < 1.5 ns 1, 2, 3
Supported CL
settings 5, 6, 7, 8, 9, 10, 11 nCK
Supported CWL
settings 5, 6, 7, 8 nCK
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
49
[DDR3L-1333 Speed Bins]
Speed Bin DDR3L-1333H
CL-tRCD-tRP 9-9-9
Symbol
/CAS write
latency
min.
max.
Unit
Notes
tAA 13.125 20 ns 9
tRCD 13.125 ns 9
tRP 13.125 ns 9
tRC 49.125 ns 9
tRAS 36 9 × tREFI ns 8
tCK (avg) @CL=5 CWL = 5 3.0 3.3 ns 1, 2, 3, 4, 6
CWL = 6, 7 Reserved Reserved ns 4
tCK (avg) @CL=6 CWL = 5 2.5 3.3 ns 1, 2, 3, 6
CWL = 6 Reserved Reserved ns 4
CWL = 7 Reserved Reserved ns 4
tCK (avg) @CL=7 CWL = 5 Reserved Reserved ns 4
CWL = 6 1.875 < 2.5 ns 1, 2, 3, 4, 6
CWL = 7 Reserved Reserved ns 4
tCK (avg) @CL=8 CWL = 5 Reserved Reserved ns 4
CWL = 6 1.875 < 2.5 ns 1, 2, 3, 6
CWL = 7 Reserved Reserved ns 4
tCK (avg) @CL=9 CWL = 5, 6 Reserved Reserved ns 4
CWL= 7 1.5 < 1.875 ns 1, 2, 3, 4
tCK (avg) @CL=10 CWL = 5, 6 Reserved Reserved ns 4
CWL= 7 1.5 < 1.875 ns 1, 2, 3
Supported CL
settings 5, 6, 7, 8, 9, 10 nCK
Supported CWL
settings 5, 6, 7 nCK
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
50
[DDR3L-1066 Speed Bins]
Speed Bin DDR3L-1066F
CL-tRCD-tRP 7-7-7
Symbol
/CAS write
latency
min.
max.
Unit
Notes
tAA 13.125 20 ns 9
tRCD 13.125 ns 9
tRP 13.125 ns 9
tRC 50.625 ns 9
tRAS 37.5 9 × tREFI ns 8
tCK (avg) @CL=5 CWL = 5 3.0 3.3 ns 1, 2, 3, 4, 5
CWL = 6 Reserved Reserved ns 4
tCK (avg) @CL=6 CWL = 5 2.5 3.3 ns 1, 2, 3, 5
CWL = 6 Reserved Reserved ns 4
tCK (avg) @CL=7 CWL = 5 Reserved Reserved ns 4
CWL = 6 1.875 < 2.5 ns 1, 2, 3, 4
tCK (avg) @CL=8 CWL = 5 Reserved Reserved ns 4
CWL = 6 1.875 < 2.5 ns 1, 2, 3
Supported CL settings 5, 6, 7, 8 nCK
Supported CWL settings 5, 6 nCK
Notes: 1. The CL setting and CWL setting result in tCK (avg) (min.) and tCK (avg) (max.) requirements. When
making a selection of tCK (avg), both need to be fulfilled: Requirements from CL setting as well as
requirements from CWL setting.
2. tCK (avg) (min.) limits: Since /CAS latency is not purely analog - data and strobe output are synchronized
by the DLL - all possible intermediate frequencies may not be guaranteed. An application should use the
next smaller JEDEC standard tCK (avg) value (2.5, 1.875, 1.5, or 1.25ns) when calculating
CL (nCK) = tAA (ns) / tCK (avg)(ns), rounding up to the next ‘Supported CL’.
3. tCK (avg) (max.) limits: Calculate tCK (avg) + tAA (max.)/CL selected and round the resulting tCK (avg)
down to the next valid speed bin (i.e. 3.3ns or 2.5ns or 1.875ns or 1.25ns). This result is tCK (avg) (max.)
corresponding to CL selected.
4. Reserved’ settings are not allowed. User must program a different value.
5. Any DDR3L-1066 speed bin also supports functional operation at lower frequencies as shown in the table
DDR3L-1066 Speed Bins which are not subject to production tests but verified by design/characterization.
6. Any DDR3L-1333 speed bin also supports functional operation at lower frequencies as shown in the table
DDR3L-1333 Speed Bins which is not subject to production tests but verified by design/characterization.
7. Any DDR3-1600 speed bin also supports functional operation at lower frequencies as shown in the table
DDR3L-1600 Speed Bins which is not subject to production tests but verified by design/characterization.
8. tREFI depends on operating case temperature (TC).
9. For devices supporting optional down binning to CL = 7 and CL = 9, tAA/tRCD/tRP(min.) must be
13.125 ns or lower. SPD settings must be programmed to match.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
51
AC Characteristics (TC = 0 °C to +85°C, VDD, VDDQ = 1.283V to 1.45V, VSS, VSSQ = 0V)
• New units tCK(avg) and nCK, are introduced in DDR3.
tCK(avg): actual tCK(avg) of the input clock under operation.
nCK: one clock cycle of the input clock, counting the actual clock edges.
AC Characteristics [DDR3L-1600, 1333]
-GN -DJ
Data rate (Mbps) 1600 1333
Parameter Symbol min. max. min. max. Unit Notes
Average clock cycle time tCK (avg) 1250 3333 1500 3333 ps
Minimum clock cycle time
(DLL-off mode) tCK (DLL-off) 8 8 ns 6
Average CK high-level width tCH (avg) 0.47 0.53 0.47 0.53 tCK (avg)
Average CK low-level width tCL (avg) 0.47 0.53 0.47 0.53 tCK (avg)
Active to read or write
command delay tRCD 13.125 13.125 ns 26
Precharge command period tRP 13.125 13.125 ns 26
Active to active/auto-refresh
command time tRC 48.125 49.125 ns 26
Active to precharge command tRAS 35 9 × tREFI 36 9 × tREFI ns 26
tRRD 6 6 ns 26, 27
Active bank A to active bank B
command period tRRD 4 4 nCK 26, 27
Four active window tFAW 30 30 ns 26
Address and control input hold time
(VIH/VIL (DC90) levels)
tIH (base)
DC90 130 150 ps 16, 23
Address and control input
setup time
(VIH/VIL (AC160) levels)
tIS (base)
AC160 60 80 ps 16, 23
Address and control input
setup time
(VIH/VIL (AC135) levels)
tIS (base)
AC135 185 205 ps 16, 23,
31
DQ and DM input hold time
(VIH/VIL (DC90) levels)
tDH (base)
DC90 55 75 ps 17, 25
DQ and DM input setup time
(VIH/VIL (AC160) levels)
tDS (base)
AC160 ps 17, 25
DQ and DM input setup time
(VIH/VIL (AC135) levels)
tDS (base)
AC135 25 45 ps 17, 25
Control and Address input pulse
width for each input tIPW 560 620 ps 32
DQ and DM input pulse width for
each input tDIPW 360 400 ps 32
DQ high-impedance time tHZ (DQ) 225 250 ps
12, 13,
14, 37
DQ low-impedance time tLZ (DQ) −450 225 −500 250 ps
12, 13,
14, 37
DQS, /DQS high-impedance time
(RL + BL/2 reference) tHZ (DQS) 225 250 ps
12, 13,
14, 37
DQS, /DQS low-impedance time
(RL − 1 reference) tLZ (DQS) −450 225 −500 250 ps
12, 13,
14, 37
DQS, /DQS to DQ skew,
per group, per access tDQSQ 100 125 ps 12, 13
/CAS to /CAS command delay tCCD 4 4 nCK
DQ output hold time from
DQS, /DQS tQH 0.38 0.38 tCK (avg)
12, 13,
38
DQS, /DQS rising edge output
access time from rising CK, /CK tDQSCK −225 225 −255 255 ps
12, 13,
37
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
52
-GN -DJ
Data rate (Mbps) 1600 1333
Parameter Symbol min. max. min. max. Unit Notes
DQS latching rising transitions to
associated clock edges tDQSS −0.27 0.27 −0.25 0.25 tCK (avg) 24
DQS falling edge hold time from
rising CK tDSH 0.18 0.2 tCK (avg) 24, 36
DQS falling edge setup time to
rising CK tDSS 0.18 0.2 tCK (avg) 24, 36
DQS input high pulse width tDQSH 0.45 0.55 0.45 0.55 tCK (avg) 34, 35
DQS input low pulse width tDQSL 0.45 0.55 0.45 0.55 tCK (avg) 33, 35
DQS output high time tQSH 0.40 0.40 tCK (avg)
12, 13,
38
DQS output low time tQSL 0.40 0.40 tCK (avg)
12, 13,
38
Mode register set command
cycle time tMRD 4 4 nCK
tMOD 15 15 ns 27
Mode register set command
update delay tMOD 12 12 nCK 27
Read preamble tRPRE 0.9 0.9 tCK (avg)
13, 19,
38
Read postamble tRPST 0.3 0.3 tCK (avg)
11, 13,
38
Write preamble tWPRE 0.9 0.9 tCK (avg) 1
Write postamble tWPST 0.3 0.3 tCK (avg) 1
Write recovery time tWR 15 15 ns 26
Auto precharge write recovery
+ precharge time tDAL WR + RU
(tRP/tCK (avg)) WR + RU
(tRP/tCK (avg)) nCK
Multi-Purpose register
recovery time tMPRR 1 1 nCK 29
Read to write command delay
(BC4MRS, BC4OTF) tRTW RL + tCCD/2
+ 2nCK − WL RL + tCCD/2
+ 2nCK − WL
(BL8MRS, BL8OTF) tRTW RL + tCCD
+ 2nCK − WL RL + tCCD
+ 2nCK − WL
Internal write to read
command delay tWTR 7.5 7.5 ns 18, 26,
27
tWTR 4 4 nCK
18, 26,
27
tRTP 7.5 7.5 ns 26, 27
Internal read to precharge
command delay tRTP 4 4 nCK 26, 27
Active to READ with auto
precharge command delay tRAP tRCD min tRCD min 28
Minimum CKE low width for self-
refresh entry to exit timing tCKESR tCKE (min.)
+ 1nCK tCKE (min.)
+ 1nCK
tCKSRE 10 10 ns 27
Valid clock requirement after self-
refresh entry or power-down entry tCKSRE 5 5 nCK 27
tCKSRX 10 10 ns 27
Valid clock requirement before
self-refresh exit or power-down exit tCKSRX 5 5 nCK 27
tXS tRFC (min.)
+ 10 tRFC (min.)
+ 10 ns 27
Exit self-refresh to commands not
requiring a locked DLL tXS 5 5 nCK 27
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
53
-GN -DJ
Data rate (Mbps) 1600 1333
Parameter Symbol min. max. min. max. Unit Notes
Exit self-refresh to commands requiring
a locked DLL tXSDLL tDLLK (min.) tDLLK (min.) nCK
Auto-refresh to active/auto-refresh
command time tRFC 160 160 ns
Average periodic refresh interval
(0°C ≤ TC ≤ +85°C) tREFI 7.8 7.8 µs
(+85°C < TC ≤ +95°C) tREFI 3.9 3.9 µs
CKE minimum pulse width
(high and low pulse width) tCKE 5 5.625 ns 27
tCKE 3 3 nCK 27
Exit reset from CKE high to a valid
command tXPR tRFC (min.)+10 tRFC (min.)+10 ns 27
tXPR 5 5 nCK 27
DLL locking time tDLLK 512 512 nCK
Power-down entry to exit time tPD tCKE (min.) 9 × tREFI tCKE (min.) 9 × tREFI 15
Exit precharge power-down with DLL
frozen to commands requiring a locked
DLL
tXPDLL 24 24 ns 2
tXPDLL 10 10 nCK 2
Exit power-down with DLL on to any
valid command; Exit precharge
power- down with DLL frozen to
commands not requiring a locked DLL
tXP 6 6 ns 27
tXP 3 3 nCK 27
Command pass disable/enable delay tCPDED 1 1 nCK
Timing of last ACT command to power-
down entry tACTPDEN 1 1 nCK 20
Timing of last PRE command to power-
down entry tPRPDEN 1 1 nCK 20
Timing of last READ/READA command
to power-down entry tRDPDEN RL + 4 + 1 RL + 4 + 1 nCK
Timing of last WRIT command to
power-down entry
(BL8MRS, BL8OTF, BC4OTF)
tWRPDEN WL + 4 +
tWR/tCK (avg) WL + 4 +
tWR/tCK (avg) nCK 9
(BC4MRS) tWRPDEN
WL + 2 +
tWR/tCK (avg) WL + 2 +
tWR/tCK (avg) nCK 9
Timing of last WRITA command to
power-down entry
(BL8MRS, BL8OTF, BC4OTF)
tWRAPDEN WL + 4 +
WR + 1 WL + 4 +
WR + 1 nCK 10
(BC4MRS) tWRAPDEN
WL + 2 +
WR + 1 WL + 2 +
WR + 1 nCK 10
Timing of last REF command to power-
down entry tREFPDEN 1 1 nCK 20, 21
Timing of last MRS command to
power-down entry tMRSPDEN tMOD (min.) tMOD (min.)
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
54
ODT AC Electrical Characteristics [DDR3L-1600, 13 33]
-GN -DJ
Data rate (Mbps) 1600 1333
Parameter Symbol min. max. min. max. Unit Notes
RTT turn-on tAON −225 225 −250 250 ps 7, 12, 37
Asynchronous RTT turn-on delay
(Power-down with DLL frozen) tAONPD 2 8.5 2 8.5 ns
RTT_Nom and RTT_WR turn-off
time from ODTLoff reference tAOF 0.3 0.7 0.3 0.7 tCK (avg) 8, 12, 37
Asynchronous RTT turn-off delay
(Power-down with DLL frozen) tAOFPD 2 8.5 2 8.5 ns
ODT to power-down entry/exit
latency tANPD WL – 1 WL – 1 nCK
ODT turn-on Latency ODTLon WL – 2 WL – 2 WL – 2 WL – 2 nCK
ODT turn-off Latency ODTLoff WL – 2 WL – 2 WL – 2 WL – 2 nCK
ODT Latency for changing from
RTT_Nom to RTT_WR ODTLcnw WL – 2 WL – 2 WL – 2 WL – 2 nCK
ODT Latency for change from
RTT_WR to RTT_Nom
(BC4)
ODTLcwn4 4 + ODTLoff 4 + ODTLoff nCK
ODT Latency for change from
RTT_WR to RTT_Nom
(BL8)
ODTLcwn8 6 + ODTLoff 6 + ODTLoff nCK
ODT high time without WRIT
command or with WRIT
command and BC4
ODTH4 4 4 nCK
ODT high time with WRIT command
and BL8 ODTH8 6 6 nCK
RTT dynamic change skew tADC 0.3 0.7 0.3 0.7 tCK (avg) 12, 37
Power-up and reset calibration
time tZQinit 512 512 nCK
Normal operation full calibration
time tZQoper 256 256 nCK
Normal operation short
calibration time tZQCS 64 64 nCK 30
Write Leveling Characteristics [DDR3L-1600, 1333]
-GN -DJ
Data rate (Mbps) 1600 1333
Parameter Symbol min. max. min. max. Unit Notes
First DQS pulse rising edge after
write leveling mode is programmed tWLMRD 40 40 nCK 3
DQS, /DQS delay after write leveling
mode is programmed tWLDQSEN 25 25 nCK 3
Write leveling setup time from rising
CK, /CK crossing to rising DQS,
/DQS crossing
tWLS 165 195 ps
Write leveling hold time from rising
DQS, /DQS crossing to rising CK,
/CK crossing
tWLH 165 195 ps
Write leveling output delay tWLO 0 7.5 0 9 ns
Write leveling output error tWLOE 0 2 0 2 ns
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
55
AC Characteristics [DDR3L-1066]
-AE
Data rate (Mbps) 1066
Parameter Symbol min. max. Unit Notes
Clock cycle time Average CL = X tCK(avg) 1875 3333 ps
Minimum clock cycle time
(DLL-off mode)
tCK
(DLL-off) 8 ns 6
Average duty cycle high-level tCH (avg) 0.47 0.53 tCK (avg)
Average duty cycle low-level tCL (avg) 0.47 0.53 tCK (avg)
Active to read or write command delay tRCD 13.125 ns 26
Precharge command period tRP 13.125 ns 26
Active to active/auto-refresh command time tRC 50.625 ns 26
Active to precharge command tRAS 37.5 9 × tREFI ns 26
Active bank A to active bank B command
period tRRD 7.5 ns 26, 27
tRRD 4 nCK 26, 27
Four active window tFAW 37.5 ns 26
Address and control input hold time
(VIH/VIL (DC90) levels)
tIH (base)
DC90 210 ps 16, 23
Address and control input
setup time
(VIH/VIL (AC160) levels)
tIS (base)
AC160 140 ps 16, 23
Address and control input
setup time
(VIH/VIL (AC135) levels)
tIS (base)
AC135 290 ps
16, 23,
31
DQ and DM input hold time
(VIH/VIL (DC90) levels)
tDH (base)
DC90 110 ps 17, 25
DQ and DM input setup time
(VIH/VIL (AC160) levels)
tDS (base)
AC160 40 ps 17, 25
DQ and DM input setup time
(VIH/VIL (AC135) levels)
tDS (base)
AC135 90 ps 17, 25
Control and Address input pulse width
for each input tIPW 780 ps 32
DQ and DM input pulse width for each input tDIPW 490 ps 32
DQ high-impedance time tHZ (DQ) 300 ps 12, 13,
14, 37
DQ low-impedance time tLZ (DQ) −600 300 ps
12, 13, 14,
37
DQS, /DQS high-impedance time
(RL + BL/2 reference) tHZ (DQS) 300 ps 12, 13, 14,
37
DQS, /DQS low-impedance time
(RL − 1 reference) tLZ (DQS) −600 300 ps
12, 13,
14, 37
DQS, /DQS -DQ skew, per group, per access tDQSQ 150 ps 12, 13
/CAS to /CAS command delay tCCD 4 nCK
DQ output hold time from DQS, /DQS tQH 0.38 tCK (avg)
12, 13,
38
DQS, /DQS rising edge output access time
from rising CK, /CK tDQSCK −300 +300 ps 12, 13, 37
DQS latching rising transitions to associated
clock edges tDQSS −0.25 0.25 tCK (avg) 24
DQS falling edge hold time from rising CK tDSH 0.2 tCK (avg) 24, 36
DQS falling edge setup time to rising CK tDSS 0.2 tCK (avg) 24, 36
DQS input high pulse width tDQSH 0.45 0.55 tCK (avg) 34, 35
DQS input low pulse width tDQSL 0.45 0.55 tCK (avg) 33, 35
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
56
-AE
Data rate (Mbps) 1066
Parameter Symbol min. max. Unit Notes
DQS output high time tQSH 0.38 tCK (avg) 12, 13, 38
DQS output low time tQSL 0.38 tCK (avg) 12, 13, 38
Mode register set command cycle time tMRD 4 nCK
Mode register set command update delay tMOD 15 ns 27
tMOD 12 nCK 27
Read preamble tRPRE 0.9 tCK (avg) 13, 19, 38
Read postamble tRPST 0.3 tCK (avg) 11, 13, 38
Write preamble tWPRE 0.9 tCK (avg) 1
Write postamble tWPST 0.3 tCK (avg) 1
Write recovery time tWR 15 ns 26
Auto precharge write recovery
+ precharge time tDAL WR + RU (tRP/tCK
(avg)) nCK
Multi-Purpose register recovery time tMPRR 1 nCK 29
Read to write command delay
(BC4MRS, BC4OTF) tRTW RL + tCCD/2
+ 2nCK − WL
(BL8MRS, BL8OTF) tRTW RL + tCCD
+ 2nCK − WL
Internal write to read command delay tWTR 7.5 ns 18, 26, 27
tWTR 4 nCK 18, 26, 27
Internal read to precharge command delay tRTP 7.5 ns 26, 27
tRTP 4 nCK 26, 27
Active to READ with auto precharge command
delay tRAP tRCD min 28
Minimum CKE low width for self-refresh entry
to exit timing tCKESR tCKE (min.)
+1nCK
Valid clock requirement after self-refresh entry
or power-down entry tCKSRE 10 ns 27
tCKSRE 5 nCK 27
Valid clock requirement before
self-refresh exit or power-down exit tCKSRX 10 ns 27
tCKSRX 5 nCK 27
Exit self-refresh to commands not requiring a
locked DLL tXS tRFC (min.)
+ 10 ns 27
tXS 5 nCK 27
Exit self-refresh to commands requiring a
locked DLL tXSDLL tDLLK (min.) nCK
Auto-refresh to active/auto-refresh
command time tRFC 160 ns
Average periodic refresh interval
(0°C ≤ TC ≤ +85°C) tREFI 7.8 µs
(+85°C < TC ≤ +95°C) tREFI 3.9 µs
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
57
-AE
Data rate (Mbps) 1066
Parameter Symbol min. max. Unit Notes
CKE minimum pulse width
(high and low pulse width) tCKE 5.625 ns 27
tCKE 3 nCK 27
Exit reset from CKE high to a valid command tXPR tRFC(min.)+10 ns 27
tXPR 5 nCK 27
DLL locking time tDLLK 512 nCK
Power-down entry to exit time tPD tCKE (min.) 9 × tREFI 15
Exit precharge power-down with DLL frozen to
commands requiring a locked DLL tXPDLL 24 ns 2
tXPDLL 10 nCK 2
Fast exit/active precharge power down to any
command tXP 7.5 ns 27
tXP 3 nCK 27
Command pass disable/enable delay tCPDED 1 nCK
Timing of last ACT command to power-down
entry tACTPDEN 1 nCK 20
Timing of last PRE command to power-down
entry tPRPDEN 1 nCK 20
Timing of last READ/READA command to
power-down entry tRDPDEN RL + 4 + 1 nCK
Timing of last WRIT command to power-down
entry
(BL8MRS, BL8OTF, BC4OTF)
tWRPDEN WL + 4 +
tWR/tCK (avg) nCK 9
(BC4MRS) tWRPDEN
WL + 2 +
tWR/tCK (avg) nCK 9
Timing of last WRITA command to
power-down entry
(BL8MRS, BL8OTF, BC4OTF)
tWRAPDEN WL + 4 + WR + 1 nCK 10
(BC4MRS) tWRAPDEN WL + 2 + WR + 1 nCK 10
Timing of last REF command to power-down
entry tREFPDEN 1 nCK 20, 21
Timing of last MRS command to power-down
entry tMRSPDEN tMOD (min.)
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
58
ODT AC Electrical Characteristics [DDR3L-1066]
-AE
Data rate (Mbps) 1066
Parameter Symbol min. max. Unit Notes
RTT turn-on tAON –300 300 ps 7, 12, 37
Asynchronous RTT turn-on delay (Power-down
with DLL frozen) tAONPD 2 8.5 ns
RTT_Nom and RTT_WR turn-off time from
ODTLoff reference tAOF 0.3 0.7 tCK (avg) 8, 12, 37
ODT turn-off (Power-down mode) tAOFPD 2 8.5 ns
ODT to power-down entry/exit latency tANPD WL – 1 nCK
ODT turn-on Latency ODTLon WL – 2 WL – 2 nCK
ODT turn-off Latency ODTLoff WL – 2 WL – 2 nCK
ODT Latency for changing from RTT_Nom to
RTT_WR ODTLcnw WL – 2 WL – 2 nCK
ODT Latency for change from RTT_WR to
RTT_Nom
(BC4)
ODTLcwn4 4 + ODTLoff nCK
ODT Latency for change from RTT_WR to
RTT_Nom
(BL8)
ODTLcwn8 6 + ODTLoff nCK
ODT high time without WRIT command or with
WRIT command and BC4 ODTH4 4 nCK
ODT high time with WRIT command and BL8 ODTH8 6 nCK
RTT dynamic change skew tADC 0.3 0.7 tCK (avg) 12, 37
Power-up and reset calibration time tZQinit 512 nCK
Normal operation full calibration time tZQoper 256 nCK
Normal operation short
calibration time tZQCS 64 nCK 30
Write Leveling Characteristics [DDR3L-1066]
-AE
Data rate (Mbps) 1066
Parameter Symbol min. max. Unit Notes
First DQS pulse rising edge after write leveling
mode is programmed tWLMRD 40 nCK 3
DQS, /DQS delay after write leveling mode is
programmed tWLDQSEN 25 nCK 3
Write leveling setup time from rising CK, /CK
crossing to rising DQS, /DQS crossing tWLS 245 ps
Write leveling hold time from rising DQS, /DQS
crossing to rising CK, /CK crossing tWLH 245 ps
Write leveling output delay tWLO 0 9 ns
Write leveling output error tWLOE 0 2 ns
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
59
Notes for AC Electrical Characteristics
Notes: 1. Actual value dependant upon measurement level definitions. See Figure Method for Calculating tWPRE
Transitions and Endpoints and see Figure Method for Calculating tWPST Transitions and Endpoints.
2. Commands requiring locked DLL are: READ (and READA) and synchronous ODT commands.
3. The max values are system dependent.
4. WR as programmed in mode register.
5. Value must be rounded-up to next integer value.
6. There is no maximum cycle time limit besides the need to satisfy the refresh interval, tREFI.
7. ODT turn on time (min.) is when the device leaves high impedance and ODT resistance begins to turn on.
ODT turn on time (max.) is when the ODT resistance is fully on. Both are measured from ODTLon.
8. ODT turn-off time (min.) is when the device starts to turn-off ODT resistance. ODT turn-off time (max.) is
when the bus is in high impedance. Both are measured from ODTLoff.
9. tWR is defined in ns, for calculation of tWRPDEN it is necessary to round up tWR/tCK to the next integer.
10. WR in clock cycles as programmed in MR0.
11. The maximum read postamble is bound by tDQSCK (min.) plus tQSH (min.) on the left side and tHZ
(DQS) (max.) on the right side. See Figure Clock to Data Strobe Relationship.
12. Output timing deratings are relative to the SDRAM input clock. When the device is operated with input
clock jitter, this parameter needs to be derated by TBD.
13. Value is only valid for RON34.
14. Single ended signal parameter. Refer to the section of tLZ(DQS), tLZ(DQ), tHZ(DQS), tHZ(DQ) Notes for
definition and measurement method.
15. tREFI depends on operating case temperature (TC).
16. tIS(base) and tIH(base) values are for 1V/ns command/address single-ended slew rate and 2V/ns CK,
/CK differential slew rate. Note for DQ and DM signals, VREF(DC) = VREFDQ(DC). For input only pins
except /RESET, VREF(DC) = VREFCA(DC). See Address / Command Setup, Hold and Derating section
17. tDS(base) and tDH(base) values are for 1V/ns DQ single-ended slew rate and 2V/ns DQS, /DQS
differential slew rate. Note for DQ and DM signals, VREF(DC) = VREFDQ(DC). For input only pins except
/RESET, VREF(DC) = VREFCA(DC). See Data Setup, Hold and Slew Rate Derating section.
18. Start of internal write transaction is definited as follows:
For BL8 (fixed by MRS and on- the-fly): Rising clock edge 4 clock cycles after WL.
For BC4 (on-the-fly): Rising clock edge 4 clock cycles after WL.
For BC4 (fixed by MRS): Rising clock edge 2 clock cycles after WL.
19. The maximum read preamble is bound by tLZ(DQS)(min.) on the left side and tDQSCK(max.) on the right
side.
20. CKE is allowed to be registered low while operations such as row activation, precharge, auto precharge or
refresh are in progress, but power-down IDD spec will not be applied until finishing those operations.
21. Although CKE is allowed to be registered low after a refresh command once tREFPDEN(min.) is satisfied,
there are cases where additional time such as tXPDLL(min.) is also required. See Figure Power-Down
Entry/Exit Clarifications - Case 2.
22. tJIT(duty) = ± { 0.07 × tCK(avg) – [(0.5 - (min (tCH(avg), tCL(avg))) × tCK(avg)] }.
For example, if tCH/tCL was 0.48/0.52, tJIT(duty) would calculate out to ±125ps for DDR3-800.
The tCH(avg) and tCL(avg) values listed must not be exceeded.
23. These parameters are measured from a command/address signal (CKE, /CS, /RAS, /CAS, /WE, ODT,
BA0, A0, A1, etc.) transition edge to its respective clock signal (CK, /CK) crossing. The spec values are
not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as the setup and hold are
relative to the clock signal crossing that latches the command/address. That is, these parameters should
be met whether clock jitter is present or not.
24. These parameters are measured from a data strobe signal (DQS, /DQS) crossing to its respective clock
signal (CK, /CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e.
tJIT(per), tJIT(cc), etc.), as these are relative to the clock signal crossing. That is, these parameters
should be met whether clock jitter is present or not.
25. These parameters are measured from a data signal (DM, DQ0, DQ1, etc.) transition edge to its respective
data strobe signal (DQS, /DQS) crossing.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
60
26. For these parameters, the DDR3 SDRAM device is characterized and verified to support
tnPARAM [nCK] = RU{tPARAM [ns] / tCK(avg)}, which is in clock cycles, assuming all input clock jitter
specifications are satisfied.
For example, the device will support tnRP = RU{tRP / tCK(avg)}, which is in clock cycles, if all input clock
jitter specifications are met. This means: For DDR3-800 6-6-6, of which tRP = 15ns, the device will
support tnRP =RU{tRP / tCK(avg)} = 6, i.e. as long as the input clock jitter specifications are met,
precharge command at Tm and active command at Tm+6 is valid even if (Tm+6 − Tm) is less than 15ns
due to input clock jitter.
27. These parameters should be the larger of the two values, analog (ns) and number of clocks (nCK).
28. The tRAS lockout circuit internally delays the Precharge operation until the array restore operation has
been completed so that the auto precharge command may be issued with any read or write command.
29. Defined between end of MPR read burst and MRS which reloads MPR or disables MPR function.
30. One ZQCS command can effectively correct a minimum of 0.5% (ZQCorrection) of RON and RTT
impedance error within 64nCK for all speed bins assuming the maximum sensitivities specified in the
‘Output Driver Voltage and Temperature Sensitivity’ and ‘ODT Voltage and Temperature Sensitivity’
tables. The appropriate interval between ZQCS commands can be determined from these tables and
other application-specific parameters.
One method for calculating the interval between ZQCS commands, given the temperature (Tdriftrate) and
voltage (Vdriftrate) drift rates that the SDRAM is subject to in the application, is illustrated. The interval
could be defined by the following formula:
×
×
where TSens = max.(dRTTdT, dRONdTM) and VSens = max.(dRTTdV, dRONdVM) define the SDRAM
temperature and voltage sensitivities. For example, if TSens = 1.5%/°C, VSens = 0.15%/mV, Tdriftrate =
1°C/sec and Vdriftrate = 15mV/sec, then the interval between ZQCS commands is calculated as:
0.5
(1.5 × 1) + (0.15 × 15) = 0.133 ≈ 128ms
31. The tIS(base) AC135 specifications are adjusted from the tIS(base) specification by adding an additional
125ps of derating to accommodate for the lower alternate threshold of 135mV and another 25ps to
account for the earlier reference point [(160mV − 135mV)/1V/ns].
32. Pulse width of a input signal is defined as the width between the first crossing of VREF(DC) and the
consecutive crossing of VREF(DC).
33. tDQSL describes the instantaneous differential input low pulse width on DQS − /DQS, as measured from
one falling edge to the next consecutive rising edge.
34. tDQSH describes the instantaneous differential input high pulse width on DQS −/DQS, as measured from
one rising edge to the next consecutive falling edge.
35. tDQSH,act + tDQSL,act = 1tCK,act ; with tXYZ,act being the actual measured value of the respective
timing parameter in the application.
36. tDSH,act + tDSS,act = 1tCK,act ; with tXYZ,act being the actual measured value of the respective timing
parameter in the application.
37. When the device is operated with input clock jitter, this parameter needs to be derated by the actual
tERR(mper),act of the input clock, where 2 ≤ m ≤ 12. (output deratings are relative to the SDRAM input
clock.)
For example, if the measured jitter into a DDR3-800 SDRAM has tERR(mper),act,min = −172ps and
tERR(mper),act,max = +193ps, then tDQSCK,min(derated) = tDQSCK,min − tERR(mper),act,max =
−400ps − 193ps = −593ps and tDQSCK,max(derated) =tDQSCK,max − tERR(mper),act,min = 400ps +
172ps = +572ps. Similarly, tLZ(DQ) for DDR3-800 derates to tLZ(DQ),min(derated) = −800ps − 193ps =
−993ps and tLZ(DQ),max(derated) = 400ps + 172ps = +572ps. Note that tERR(mper),act,min is the
minimum measured value of tERR(nper) where 2 ≤ n ≤ 12, and tERR(mper),act,max is the maximum
measured value of tERR(nper) where 2 ≤ n ≤ 12.
38. When the device is operated with input clock jitter, this parameter needs to be derated by the actual
tJIT(per),act of the input clock. (output deratings are relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR3-800 SDRAM has tCK(avg),act = 2500ps, tJIT(per),act,min
= − 72ps and tJIT(per),act,max = +93ps, then tRPRE,min(derated) = tRPRE,min + tJIT(per),act,min = 0.9
× tCK(avg),act + tJIT(per),act,min = 0.9 × 2500ps − 72ps = +2178ps. Similarly, tQH,min(derated) =
tQH,min + tJIT(per),act,min = 0.38 × tCK(avg),act + tJIT(per),act,min = 0.38 × 2500ps − 72ps = + 878ps.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
61
Clock Jitter [DDR3L-1600, 1333]
-GN -DJ
Data rate (Mbps) 1600 1333
Parameter Symbol min. max. min. max. Unit Notes
Average clock period tCK (avg) 1250 3333 1500 3333 ps 1
Absolute clock period tCK (abs) tCK(avg)min +
tJIT(per)min
tCK(avg)max+
tJIT(per)max
tCK(avg)min +
tJIT(per)min
tCK(avg)max+
tJIT(per)max ps 2
Clock period jitter tJIT (per) −70 70 −80 80 ps 6
Clock period jitter during
DLL locking period tJIT (per, lck) −60 60 −70 70 ps 6
Cycle to cycle period Jitter tJIT (cc) 140 160 ps 7
Cycle to cycle clock period jitter
during DLL locking period tJIT (cc, lck) 120 140 ps 7
Cumulative error across 2 cycles tERR (2per) −103 103 −118 118 ps 8
Cumulative error across 3 cycles tERR (3per) −122 122 −140 140 ps 8
Cumulative error across 4 cycles tERR (4per) −136 136 −155 155 ps 8
Cumulative error across 5 cycles tERR (5per) −147 147 −168 168 ps 8
Cumulative error across 6 cycles tERR (6per) −155 155 −177 177 ps 8
Cumulative error across 7 cycles tERR (7per) −163 163 −186 186 ps 8
Cumulative error across 8 cycles tERR (8per) −169 169 −193 193 ps 8
Cumulative error across 9 cycles tERR (9per) −175 175 −200 200 ps 8
Cumulative error across 10 cycles tERR (10per) −180 180 −205 205 ps 8
Cumulative error across 11 cycles tERR (11per) −184 184 −210 210 ps 8
Cumulative error across 12 cycles tERR (12per) −188 188 −215 215 ps 8
Cumulative error across
n = 13, 14…49, 50 cycles tERR (nper) tERR (nper) min. = (1+0.68ln(n)) x tJIT(per) min.
tERR (nper) max. = (1+0.68ln(n)) x tJIT(per) max. ps 9
Average high pulse width tCH (avg) 0.47 0.53 0.47 0.53 tCK
(avg) 3
Average low pulse width tCL (avg) 0.47 0.53 0.47 0.53 tCK
(avg) 4
Absolute clock high pulse width tCH (abs) 0.43 0.43 tCK
(avg) 10, 11
Absolute clock low pulse width tCL (abs) 0.43 0.43 tCK
(avg) 10, 12
Duty cycle jitter tJIT (duty) ps 5
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
62
Clock Jitter [DDR3L-1066]
-AE
Data rate (Mbps) 1066
Parameter Symbol min. max. Unit Notes
Average clock period tCK (avg) 1875 3333 ps 1
Absolute clock period tCK (abs) tCK(avg)min + tJIT(per)min tCK(avg)max+ tJIT(per)max ps 2
Clock period jitter tJIT (per) −90 90 ps 6
Clock period jitter during
DLL locking period tJIT (per, lck) −80 80 ps 6
Cycle to cycle period jitter tJIT (cc) 180 ps 7
Cycle to cycle clock period jitter during
DLL locking period tJIT (cc, lck) 160 ps 7
Cumulative error across 2 cycles tERR (2per) −132 132 ps 8
Cumulative error across 3 cycles tERR (3per) −157 157 ps 8
Cumulative error across 4 cycles tERR (4per) −175 175 ps 8
Cumulative error across 5 cycles tERR (5per) −188 188 ps 8
Cumulative error across 6 cycles tERR (6per) −200 200 ps 8
Cumulative error across 7 cycles tERR (7per) −209 209 ps 8
Cumulative error across 8 cycles tERR (8per) −217 217 ps 8
Cumulative error across 9 cycles tERR (9per) −224 224 ps 8
Cumulative error across 10 cycles tERR (10per) −231 231 ps 8
Cumulative error across 11 cycles tERR (11per) −237 237 ps 8
Cumulative error across 12 cycles tERR (12per) −242 242 ps 8
Cumulative error across
n=13, 14…49,50 cycles tERR (nper) tERR (nper) min. = (1+0.68ln(n)) x tJIT(per) min.
tERR (nper) max. = (1+0.68ln(n)) x tJIT(per) max. ps 9
Average high pulse width tCH (avg) 0.47 0.53 tCK (avg) 3
Average low pulse width tCL (avg) 0.47 0.53 tCK (avg) 4
Absolute clock high pulse width tCH (abs) 0.43 tCK (avg) 10, 11
Absolute clock low pulse width tCL (abs) 0.43 tCK (avg) 10, 12
Duty cycle jitter tJIT (duty) ps 5
Notes: 1. tCK (avg) is calculated as the average clock period across any consecutive 200cycle window, where each
clock period is calculated from rising edge to rising edge.
Σ
N
j = 1
tCK
j
N
N = 200
2. tCK (abs) is the absolute clock period, as measured from one rising edge to the next consecutive rising
edge. tCK (abs) is not subject to production test.
3. tCH (avg) is defined as the average high pulse width, as calculated across any consecutive 200 high
pulses.
Σ
N
j = 1
tCHj(N × tCK(avg))
N = 200
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
63
4. tCL (avg) is defined as the average low pulse width, as calculated across any consecutive 200 low pulses.
Σ
N
j = 1
tCL
j
(N × tCK(avg))
N = 200
5. tJIT (duty) is defined as the cumulative set of tCH jitter and tCL jitter. tCH jitter is the largest deviation of
any single tCH from tCH (avg). tCL jitter is the largest deviation of any single tCL from tCL (avg).
tJIT (duty) is not subject to production test.
tJIT (duty) = Min./Max. of {tJIT (CH), tJIT (CL)}, where:
tJIT (CH) = {tCHj- tCH (avg) where j = 1 to 200}
tJIT (CL) = {tCLj- tCL (avg) where j = 1 to 200}
6. tJIT (per) is defined as the largest deviation of any single tCK from tCK (avg).
tJIT (per) = Min./Max. of { tCKj − tCK (avg) where j = 1 to 200}
tJIT (per) defines the single period jitter when the DLL is already locked. tJIT (per, lck) uses the same
definition for single period jitter, during the DLL locking period only. tJIT (per) and tJIT (per, lck) are not
subject to production test.
7. tJIT (cc) is defined as the absolute difference in clock period between two consecutive clock cycles:
tJIT (cc) = Max. of {tCKj+1 - tCKj}
tJIT (cc) is defines the cycle when the DLL is already locked. tJIT (cc, lck) uses the same definition for
cycle-to-cycle jitter, during the DLL locking period only. tJIT (cc) and tJIT (cc, lck) are not subject to
production test.
8. tERR (nper) is defined as the cumulative error across n multiple consecutive cycles from tCK (avg).
tERR (nper) is not subject to production test.
9. n = from 13 cycles to 50 cycles. This row defines 38 parameters.
10. These parameters are specified per their average values, however it is understood that the following
relationship between the average timing and the absolute instantaneous timing hold at all times.
(minimum and maximum of spec values are to be used for calculations in the table below.)
Parameter Symbol min. max. Unit
Absolute clock period tCK (abs) tCK (avg)min. + tJIT (per)min. tCK (avg)max. + tJIT (per)max. ps
Absolute clock high pulse
width tCH (abs) tCH (avg)min. × tCK (avg)min. +
tJIT (duty)min.
tCH (avg)max. × tCK (avg)max.
+ tJIT (duty)max. ps
Absolute clock low pulse
width tCL (abs) tCL (avg)min. × tCK (avg)min. +
tJIT (duty)min.
tCL (avg)max. × tCK (avg)max.
+ tJIT (duty)max. ps
11. tCH (abs) is the absolute instantaneous clock high pulse width, as measured from one rising edge to the
following falling edge.
12. tCL(abs) is the absolute instantaneous clock low pulse width, as measured from one falling edge to the
following rising edge.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
64
Block Diagram
Bank 7
Bank 6
Bank 5
Bank 4
Address,
BA0, BA1, BA2
/CS
/RAS
/CAS
/WE
Command decoder
Input & Output buffer
Latch circuit
Data control circuit
Column decoder
Row decoder
Memory cell array
Bank 0
Sense amp.
Bank 1
Bank 2
Bank 3
Control logic
Column
address
buffer
and
burst
counter
Row
address
buffer
and
refresh
counter
Mode
register
Clock
generator
DQ
CK
/CK
CKE
DQS, /DQS
DM
DLL
CK, /CK TDQS, /TDQS
ODT
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
65
Pin Function
CK, /CK (input pins)
CK and /CK are differential clock inputs. All address and control input signals are sampled on the crossing of the
positive edge of CK and negative edge of /CK. Output (read) data is referenced to the crossings of CK and /CK
(both directions of crossing).
/CS (input pin)
All commands are masked when /CS is registered high. /CS provides for external rank selection on systems with
multiple ranks. /CS is considered part of the command code.
/RAS, /CAS, /WE (input pins)
/RAS, /CAS and /WE (along with /CS) define the command being entered.
A0 to A14 (input pins)
Provided the row address for active commands and the column address for read/write commands to select one
location out of the memory array in the respective bank. (A10(AP) and A12(/BC) have additional functions, see
below) The address inputs also provide the op-code during mode register set commands.
[Address Pins Table]
Address (A0 to A14)
Part number Page size Row address (RA) Column address (CA) Note
EDJ2104EDBG 1KB AX0 to AX14 AY0 to AY9, AY11
EDJ2108EDBG AX0 to AX14 AY0 to AY9
A10(AP) (input pin)
A10 is sampled during read/write commands to determine whether auto precharge should be performed to the
accessed bank after the read/write operation. (high: auto precharge; low: no auto precharge)
A10 is sampled during a precharge command to determine whether the precharge applies to one bank (A10 = low)
or all banks (A10 = high). If only one bank is to be precharged, the bank is selected by bank addresses (BA).
A12(/BC) (input pin)
A12 is sampled during read and write commands to determine if burst chop (on-the-fly) will be performed.
(A12 = high: no burst chop, A12 = low: burst chopped.) See command truth table for details.
BA0 to BA2 (input pins)
BA0, BA1 and BA2 define to which bank an active, read, write or precharge command is being applied. BA0 and
BA1 also determine which Mode Register (MR0 to MR3) is to be accessed during a MRS cycle.
[Bank Select Signal Table]
BA0 BA1 BA2
Bank 0 L L L
Bank 1 H L L
Bank 2 L H L
Bank 3 H H L
Bank 4 L L H
Bank 5 H L H
Bank 6 L H H
Bank 7 H H H
Remark: H: VIH. L: VIL.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
66
CKE (input pin)
CKE high activates, and CKE low deactivates, internal clock signals and device input buffers and output drivers.
Taking CKE low provides precharge power-down and self-refresh operation (all banks idle), or active power-down
(row active in any bank). CKE is asynchronous for self-refresh exit. After VREF has become stable during the
power-on and initialization sequence, it must be maintained for proper operation of the CKE receiver. For proper
self-refresh entry and exit, VREF must be maintained to this input. CKE must be maintained high throughout read
and write accesses. Input buffers, excluding CK, /CK, ODT and CKE are disabled during power-down. Input buffers,
excluding CKE, are disabled during self-refresh.
DM (input pins)
DM is an input mask signal for write data. Input data is masked when DM is sampled high coincident with that input
data during a write access. DM is sampled on both edges of DQS. For ×8 configuration, the function of DM or
TDQS, /TDQS is enabled by mode register A11 setting in MR1.
DQ (input/output pins)
Bi-directional data bus.
DQS, /DQS (input/output pins)
Output with read data, input with write data. Edge-aligned with read data, center-aligned with write data.
The data strobe DQS is paired with differential signal /DQS to provide differential pair signaling to the system during
READs and WRITEs.
TDQS, /TDQS (output pins)
TDQS and /TDQS is applicable for ×8 configuration only. When enabled via mode register A11 = 1 in MR1, DRAM
will enable the same termination resistance function on TDQS, /TDQS as is applied to DQS, /DQS. When disabled
via mode register A11 = 0 in MR1, DM/TDQS will provide the data mask function and /TDQS is not used.
In ×4 configuration, the TDQS function must be disabled via mode register A11 = 0 in MR1.
/RESET (input pin)
/RESET is a CMOS rail to rail signal with DC high and low at 80% and 20% of VDD (1.20V for DC high and 0.30V
for DC low).
It is negative active signal (active low) and is referred to GND. There is no termination required on this signal. It will
be heavily loaded across multiple chips. /RESET is destructive to data contents.
ODT (input pin)
ODT (registered high) enables termination resistance internal to the DDR3 SDRAM. When enabled, ODT is only
applied to each DQ, DQS, /DQS, DM/TDQS, NU(/TDQS) (when TDQS is enabled via mode register A11 = 1 in MR1)
signal for ×4/×8 configuration. The ODT pin will be ignored if the Mode Register (MR1) is programmed to disable
ODT.
ZQ (supply)
Reference pin for ZQ calibration.
VDD, VSS, VDDQ, VSSQ (power supply pins)
VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply pins for the output
buffers.
VREFCA, VREFDQ (power supply pins)
Reference voltage
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
67
Command Operation
Command Truth Table
The DDR3 SDRAM recognizes the following commands specified by the /CS, /RAS, /CAS, /WE and address pins.
CKE
Function
Symbol
Previous
cycle
Current
cycle
/CS
/RAS
/CAS
/WE
BA0 to
BA2
A12
(/BC)
A10
(AP) Address
Notes
Mode register set MRS H H L L L L BA op-code
Auto-refresh REF H H L L L H V V V V
Self-refresh entry SELF H L L L L H V V V V 6, 8,
11
Self-refresh exit SREX L H H × × × × × × × 6, 7, 8,
11
L H L H H H V V V V
Single bank precharge PRE H H L L H L BA V L V
Precharge all banks PALL H H L L H L V V H V
Bank activate ACT H H L L H H BA RA 12
Write (Fixed BL) WRIT H H L H L L BA V L CA
Write (BC4, on the fly) WRS4 H H L H L L BA L L CA
Write (BL8, on the fly) WRS8 H H L H L L BA H L CA
Write with auto precharge
(Fixed BL) WRITA H H L H L L BA V H CA
Write with auto precharge
(BC4, on the fly) WRAS4 H H L H L L BA L H CA
Write with auto precharge
(BL8, on the fly) WRAS8 H H L H L L BA H H CA
Read (Fixed BL) READ H H L H L H BA V L CA
Read (BC4, on the fly) RDS4 H H L H L H BA L L CA
Read (BL8, on the fly) RDS8 H H L H L H BA H L CA
Read with auto precharge
(Fixed BL) READA H H L H L H BA V H CA
Read with auto precharge
(BC4, on the fly) RDAS4 H H L H L H BA L H CA
Read with auto precharge
(BL8, on the fly) RDAS8 H H L H L H BA H H CA
No operation NOP H H L H H H V V V V 9
Device deselect DESL H H H × × × × × × × 10
Power-down mode entry PDEN H L H × × × × × × × 5, 11
H L L H H H V V V V
Power-down mode exit PDEX L H H × × × × × × × 5, 11
L H L H H H V V V V
ZQ calibration long ZQCL H H L H H L × × H ×
ZQ calibration short ZQCS H H L H H L × × L ×
Remark: H = VIH. L = VIL. × = Don't care (defined or undefined (including floating around VREF)) logic level.
V = VIH or VIL (defined logic level).
BA = Bank addresses. RA = Row Address. CA = Column Address. /BC = Burst Chop.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
68
Notes: 1. All DDR3 commands are defined by states of /CS, /RAS, /CAS, /WE and CKE at the rising edge of the
clock. The most significant bit (MSB) of BA, RA, and CA are device density and configuration dependent.
2. /RESET is an active low asynchronous signal that must be driven high during normal operation
3. Bank Addresses (BA) determine which bank is to be operated upon. For MRS, BA selects an mode
register.
4. Burst READs or WRITEs cannot be terminated or interrupted and fixed/on the fly BL will be defined by
MRS.
5. The power-down mode does not perform any refresh operations.
6. The state of ODT does not affect the states described in this table. The ODT function is not available
during self-refresh.
7. Self-refresh exit is asynchronous.
8. VREF (both VREFDQ and VREFCA) must be maintained during self-refresh operation. VREFDQ supply
may be turned off and VREFDQ may take any value between VSS and VDD during self-refresh operation,
provided that VREFDQ is valid and stable prior to CKE going back high and that first write operation or
first write leveling activity may not occur earlier than 512 nCK after exit from self-refresh.
9. The No Operation command (NOP) should be used in cases when the DDR3 SDRAM is in an idle or a
wait state. The purpose of the NOP command is to prevent the DDR3 SDRAM from registering any
unwanted commands between operations. A NOP command will not terminate a previous operation that is
still executing, such as a burst read or write cycle.
10. The DESL command performs the same function as a NOP command.
11. Refer to the CKE Truth Table for more detail with CKE transition.
12. No more than 4 banks may be activated in a rolling tFAW window. Converting to clocks is done by
dividing tFAW (ns) by tCK (ns) and rounding up to next integer value. As an example of the rolling
window, if (tFAW/tCK) rounds up to 10 clocks, and an activate command is issued in clock N, no more
than three further activate commands may be issued in clock N+1 through N+9.
No Operation Command [NOP]
The No Operation command (NOP) should be used in cases when the DDR3 SDRAM is in an idle or a wait state.
The purpose of the NOP command is to prevent the DDR3 SDRAM from registering any unwanted commands
between operations. A NOP command will not terminate a previous operation that is still executing, such as a burst
read or write cycle.
The no operation (NOP) command is used to instruct the selected DDR3 SDRAM to perform a NOP (/CS low, /RAS,
/CAS, /WE high). This prevents unwanted commands from being registered during idle or wait states. Operations
already in progress are not affected.
Device Deselect Command [DESL]
The deselect function (/CS high) prevents new commands from being executed by the DDR3 SDRAM. The DDR3
SDRAM is effectively deselected. Operations already in progress are not affected.
Mode Register Set Command [MR0 to MR3]
The mode registers are loaded via row address inputs. See mode register descriptions in the Programming the
Mode Register section. The mode register set command can only be issued when all banks are idle, and a
subsequent executable command cannot be issued until tMRD is met.
Bank Activate Command [ACT]
This command is used to open (or activate) a row in a particular bank for a subsequent access. The values on the
BA inputs select the bank, and the address provided on row address inputs selects the row. This row remains active
(or open) for accesses until a precharge command is issued to that bank. A precharge command must be issued
before opening a different row in the same bank.
Note: No more than 4 banks may be activated in a rolling tFAW window. Converting to clocks is done by dividing
tFAW (ns) by tCK (ns) and rounding up to next integer value. As an example of the rolling window, if
(tFAW/tCK) rounds up to 10 clocks, and an activate command is issued in clock N, no more than three further
activate commands may be issued in clock N+1 through N+9.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
69
Read Command [READ, RDS4, RDS8, READA, RDAS4, RDAS8]
The read command is used to initiate a burst read access to an active row. The values on the BA inputs select the
bank, and the address provided on column address inputs selects the starting column location. The value on input
A10 determines whether or not auto precharge is used. If auto precharge is selected, the row being accessed will be
precharged at the end of the read burst; if auto precharge is not selected, the row will remain open for subsequent
accesses.
Write Command [WRIT, WRS4, WRS8, WRITA, WRAS4, WRAS8]
The write command is used to initiate a burst write access to an active row. The values on the BA inputs select the
bank, and the address provided on column address inputs selects the starting column location. The value on input
A10 determines whether or not auto precharge is used. If auto precharge is selected, the row being accessed will be
precharged at the end of the write burst; if auto precharge is not selected, the row will remain open for subsequent
accesses. Input data appearing on the DQ is written to the memory array subject to the DM input logic level
appearing coincident with the data. If a given DM signal is registered low, the corresponding data will be written to
memory; if the DM signal is registered high, the corresponding data inputs will be ignored, and a write will not be
executed to that byte/column location.
Precharge Command [PRE, PALL]
The precharge command is used to deactivate the open row in a particular bank or the open row in all banks. The
bank(s) will be available for a subsequent row access a specified time (tRP) after the precharge command is issued.
Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank is to be
precharged, inputs BA select the bank. Otherwise BA are treated as "Don't Care." Once a bank has been
precharged, it is in the idle state and must be activated prior to any read or write commands being issued to that
bank. A precharge command will be treated as a NOP if there is no open row in that bank (idle state), or if the
previously open row is already in the process of precharging.
Auto precharge Command [READA, WRITA]
Before a new row in an active bank can be opened, the active bank must be precharged using either the precharge
command or the auto precharge function. When a read or a write command is given to the DDR3 SDRAM, the /CAS
timing accepts one extra address, column address A10, to allow the active bank to automatically begin precharge at
the earliest possible moment during the burst read or write cycle. If A10 is low when the read or write command is
issued, then normal read or write burst operation is executed and the bank remains active at the completion of the
burst sequence. If A10 is high when the read or write command is issued, then the auto precharge function is
engaged. During auto precharge, a read command will execute as normal with the exception that the active bank
will begin to precharge on the rising edge which is (AL* + tRTP) cycles later from the read with auto precharge
command.
Auto precharge can also be implemented during write commands. The precharge operation engaged by the Auto
precharge command will not begin until the last data of the burst write sequence is properly stored in the memory
array.
This feature allows the precharge operation to be partially or completely hidden during burst read cycles (dependent
upon /CAS latency) thus improving system performance for random data access. The tRAS lockout circuit internally
delays the Precharge operation until the array restore operation has been completed so that the auto precharge
command may be issued with any read or write command.
Note: AL (Additive Latency), refer to Posted /CAS description in the Register Definition section.
Auto-Refresh Command [REF]
Auto-refresh is used during normal operation of the DDR3 SDRAM and is analogous to /CAS-before-/RAS (CBR)
refresh in FPM/EDO DRAM. This command is nonpersistent, so it must be issued each time a refresh is required.
The addressing is generated by the internal refresh controller. This makes the address bits a "Don't Care" during an
auto-refresh command.
A maximum of eight auto-refresh commands can be posted to any given DDR3, meaning that the maximum absolute
interval between any auto-refresh command and the next auto-refresh command is 9 × tREFI. This maximum
absolute interval is to allow DDR3 output drivers and internal terminators to automatically recalibrate compensating
for voltage and temperature changes.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
70
Self-Refresh Command [SELF]
The self-refresh command can be used to retain data in the DDR3, even if the rest of the system is powered down.
When in the self-refresh mode, the DDR3 retains data without external clocking. The self-refresh command is
initiated like an auto-refresh command except CKE is disabled (low). The DLL is automatically disabled upon
entering self-refresh and is automatically enabled and reset upon exiting self-refresh. The active termination is also
disabled upon entering self-refresh and enabled upon exiting self-refresh. (512 clock cycles must then occur before
a read command can be issued). Input signals except CKE are "Don't Care" during self-refresh. The procedure for
exiting self-refresh requires a sequence of commands. First, CK and /CK must be stable prior to CKE going back
high. Once CKE is high, the DDR3 must have NOP commands issued for tXSDLL because time is required for the
completion of any internal refresh in progress. A simple algorithm for meeting both refresh, DLL requirements and
out-put calibration is to apply NOPs for 512 clock cycles before applying any other command to allow the DLL to lock
and the output drivers to recalibrate.
ZQ calibration Command [ZQCL, ZQCS]
ZQ calibration command (short or long) is used to calibrate DRAM RON and ODT values over PVT.
ZQ Calibration Long (ZQCL) command is used to perform the initial calibration during power-up initialization
sequence.
ZQ Calibration Short (ZQCS) command is used to perform periodic calibrations to account for VT variations.
All banks must be precharged and tRP met before ZQCL or ZQCS commands are issued by the controller.
ZQ calibration commands can also be issued in parallel to DLL lock time when coming out of self-refresh.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
71
CKE Truth Table
CKE
Current state*2
Previous
cycle (n-1)*1
Current
cycle (n)*1
Command (n)*3
/CS, /RAS, /CAS, /WE
Operation (n)*3
Notes
Power-down L L × Maintain power-down 14, 15
L H DESL or NOP Power-down exit 11, 14
Self-refresh L L × Maintain self-refresh 15, 16
L H DESL or NOP Self-refresh exit 8, 12, 16
Bank Active H L DESL or NOP Active power-down entry 11, 13, 14
Reading H L DESL or NOP Power-down entry 11, 13, 14, 17
Writing H L DESL or NOP Power-down entry 11, 13, 14, 17
Precharging H L DESL or NOP Power-down entry 11, 13, 14, 17
Refreshing H L DESL or NOP Precharge power-down entry 11
All banks idle H L DESL or NOP Precharge power-down entry 11, 13, 14, 18
H L REFRESH Self-refresh entry 9, 13, 18
Any state other than
listed above H H Refer to the Command Truth Table 10
Remark: H = VIH. L = VIL. × = Don’t care
Notes: 1. CKE (n) is the logic state of CKE at clock edge n; CKE (n−1) is the state of CKE at the previous clock
edge.
2. Current state is the state of the DDR3 SDRAM immediately prior to clock edge n.
3. Command (n) is the command registered at clock edge n, and operation (n) is a result of Command (n).
ODT is not included here.
4. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this
document.
5. The state of ODT does not affect the states described in this table. The ODT function is not available
during self-refresh.
6. CKE must be registered with the same value on tCKE (min.) consecutive positive clock edges. CKE must
remain at the valid input level the entire time it takes to achieve the tCKE (min.) clocks of registration.
Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS +
tCKE (min.) + tIH.
7. DESL and NOP are defined in the Command Truth Table.
8. On self-refresh exit, DESL or NOP commands must be issued on every clock edge occurring during the
tXS period. Read or ODT command may be issued only after tXSDLL is satisfied.
9. Self-refresh mode can only be entered from the all banks idle state.
10. Must be a legal command as defined in the Command Truth Table.
11. Valid commands for power-down entry and exit are NOP and DESL only.
12. Valid commands for self-refresh exit are NOP and DESL only.
13. Self-refresh can not be entered while read or write operations, (extended) mode register set operations or
precharge operations are in progress. See section Power-Down and self-refresh Command for a detailed
list of restrictions.
14. The power-down does not perform any refresh operations.
15. “×” means “don’t care” (including floating around VREF) in self-refresh and power-down. It also applies to
address pins.
16. VREF (both VREFDQ and VREFCA) must be maintained during self-refresh operation. VREFDQ supply
may be turned off and VREFDQ may take any value between VSS and VDD during self-refresh operation,
provided that VREFDQ is valid and stable prior to CKE going back high and that first write operation or
first write leveling activity may not occur earlier than 512 nCK after exit from self-refresh.
17. If all banks are closed at the conclusion of the read, write or precharge command, the precharge power-
down is entered, otherwise active power-down is entered.
18. Idle state means that all banks are closed (tRP, tDAL, etc. satisfied), no data bursts are in progress. CKE
is high and all timings from previous operation are satisfied (tMRD, tMOD, tRFC, tZQinit, tZQoper, tZQCS,
etc.) as well as all self-refresh exit and power-down exit parameters are satisfied (tXS, tXP, tXPDLL, etc).
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
72
Simplified State Diagram
POWER
ON RESET
PROCEDURE
POWER
APPLIED
RESET
FROM ANY
STATE
INITIALIZATION
ZQ
CALIBRATION IDLE
ACTIVATING
MRS, MPR,
WRITE
LEVELING SELF
REFRESH
REFRESHING
MRS
SELF
SELFX
CKE_L
CKE_L
CKE_L
REF
PDEN
PDEX
ACT
PRECHARGE
POWER
DOWN
ACTIVE
POWER
DOWN
READINGWRITING
BANK
ACTIVE READ
READ
WRIT
WRIT
PRECHARGING
PDEN PDEX
READING
WRITING
READA
WRITA
READA
READAWRITA
WRIT
WRITA
PRE, PALL
Automatic sequence
Command sequence
PRE, PALL
PRE, PALL
READ
ZQCL
ZQCS
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
73
RESET and Initialization Procedure
Power-Up and Initialization Sequence
1. Apply power (/RESET is recommended to be maintained below 0.2 × VDD, (all other inputs may be undefined). )
/RESET needs to be maintained for minimum 200µs with stable power. CKE is pulled low anytime before
/RESET being de-asserted (min. time 10ns). The power voltage ramp time between 300mV to VDD (min.) must
be no greater than 200ms; and during the ramp, VDD > VDDQ and (VDD − VDDQ) < 0.3V.
• VDD and VDDQ are driven from a single power converter output
AND
• The voltage levels on all pins other than VDD, VDDQ, VSS, VSSQ must be less than or equal to VDDQ and VDD
on one side and must be larger than or equal to VSSQ and VSS on the other side. In addition, VTT is limited to
0.95V max once power ramp is finished,
AND
• VREF tracks VDDQ/2.
OR
• Apply VDD without any slope reversal before or at the same time as VDDQ.
• Apply VDDQ without any slope reversal before or at the same time as VTT and VREF.
• The voltage levels on all pins other than VDD, VDDQ, VSS, VSSQ must be less than or equal to VDDQ and VDD
on one side and must be larger than or equal to VSSQ and VSS on the other side.
2. After /RESET is de-asserted, wait for another 500µs until CKE become active. During this time, the DRAM will
start internal state initialization; this will be done independently of external clocks.
3. Clocks (CK, /CK) need to be started and stabilized for at least 10ns or 5tCK (which is larger) before CKE goes
active. Since CKE is a synchronous signal, the corresponding set up time to clock (tIS) must be met. Also a NOP
or DESL command must be registered (with tIS set up time to clock) before CKE goes active. Once the CKE
registered “high” after Reset, CKE needs to be continuously registered high until the initialization sequence is
finished, including expiration of tDLLK and tZQinit.
4. The DDR3 SDRAM will keep its on-die termination in high-impedance state during /RESET being asserted at
least until CKE being registered high. Therefore, the ODT signal may be in undefined state until tIS before CKE
being registered high. After that, the ODT signal must be kept inactive (low) until the power-up and initialization
sequence is finished, including expiration of tDLLK and tZQinit.
5. After CKE being registered high, wait minimum of tXPR, before issuing the first MRS command to load mode
register. (tXPR = max. (tXS ; 5 × tCK)
6. Issue MRS command to load MR2 with all application settings. (To issue MRS command for MR2, provide low to
BA0 and BA2, high to BA1.)
7. Issue MRS command to load MR3 with all application settings. (To issue MRS command for MR3, provide low to
BA2, high to BA0 and BA1.)
8. Issue MRS command to load MR1 with all application settings and DLL enabled. (To issue DLL Enable
command, provide low to A0, high to BA0 and low to BA1 and BA2).
9. Issue MRS command to load MR0 with all application settings and DLL reset. (To issue DLL reset command,
provide high to A8 and low to BA0 to BA2).
10. Issue ZQCL command to start ZQ calibration.
11. Wait for both tDLLK and tZQinit completed.
12. The DDR3 SDRAM is now ready for normal operation.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
74
max. (10 ns; 5tCK)
10ns tIS
tIS
tIS
200
m
s500
m
s
Notes: 1. From time point "Td" until "Tk", NOP or DESL commands must be
applied between MRS and ZQcal commands.
2. tXPR = max. (tXS; 5tCK)
: VIH or VIL
CK, /CK
VDD, VDDQ
/RESET
CKE
Command
BA
ODT
DRAM_RTT
MRS
*
1MRS MRS MRS ZQcal
MR2 MR3 MR1 MR0
Ta Tb Tc Td Te Tf Tg Th Ti Tj Tk
tXPR
tMRD tZQinit
tDLLK
tMRD tMRD tMOD
*
2
tCKSRX
Reset and Initialization Sequence at Power-On Ramping
Reset and Initialization with Stable Power
The following sequence is required for /RESET at no power interruption initialization.
1. Assert /RESET below 0.2 × VDD anytime when reset is needed (all other inputs may be undefined). /RESET
needs to be maintained for minimum 100ns. CKE is pulled low before /RESET being de-asserted (minimum time
10ns).
2. Follow Power-Up Initialization Sequence steps 2 to 11.
3. The reset sequence is now completed; DDR3 SDRAM is ready for normal operation.
max. (10 ns; 5tCK)
10ns tIS
tIS
tIS
100ns 500
m
s
Notes: 1. From time point "Td" until"Tk", NOP or DESL commands must be
applied between MRS and ZQCL commands.
2. tXPR = max. (tXS; 5tCK)
: VIH or VIL
CK, /CK
VDD, VDDQ
/RESET
CKE
Command
BA
ODT
DRAM_RTT
MRS
*
1
MRS MRS MRS
ZQCL
MR2 MR3 MR1 MR0
Ta Tb Tc Td Te Tf Tg Th Ti Tj Tk
tXPR
tMRD tZQinit
tDLLK
tMRD tMRD tMOD
*
2
tCKSRX
Reset Procedure at Power Stable Condition
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
75
Programming the Mode Register
For application flexibility, various functions, features and modes are programmable in four mode registers, provided
by the DDR3 SDRAM, as user defined variables, and they must be programmed via a Mode Register Set (MRS)
command. As the default values of the Mode Registers (MR#) are not defined, content of mode registers must be
fully initialized and/or re-initialized, i.e. written, after Power-up and/or reset for proper operation. Also the contents of
the mode registers can be altered by re-executing the MRS command during normal operation. When programming
the mode registers, even if the user chooses to modify only a sub-set of the MRS fields, all address fields within the
accessed mode register must be redefined when the MRS command is issued. MRS command and DLL Reset
does not affect array contents, which means these commands can be executed any time after power-up without
affecting the array contents.
The mode register set command cycle time, tMRD is required to complete the write operation to the mode register
and is the minimum time required between two MRS commands. The MRS command to non-MRS command delay,
tMOD, is required for the DRAM to update the features except DLL reset and is the minimum time required from an
MRS command to a non-MRS command excluding NOP and DESL. The mode register contents can be changed
using the same command and timing requirements during normal operation as long as the DRAM is in idle state, i.e.
all banks are in the precharged state with tRP satisfied, all data bursts are completed and CKE is already high prior
to writing into the mode register. The mode registers are divided into various fields depending on the functionality
and/or modes.
Mode Register Set Command Cycle Time (tMRD)
tMRD is the minimum time required from an MRS command to the next MRS command. As DLL enable and DLL
reset are both MRS commands, tMRD is applicable between MRS to MR1 for DLL enable and MRS to MR0 for DLL
reset, and not tMOD.
Command MRS NOP MRS NOP
tMRD
CK
/CK
tMRD Timing
MRS Command to Non-MRS Command Delay (tMOD)
tMOD is the minimum time required from an MRS command to a non-MRS command excluding NOP and DESL.
Note that additional restrictions may apply, for example, MRS to MR0 for DLL reset followed by read.
Command MRS NOP non-MRS NOP
Old
setting
tMOD
Updating New Setting
CK
/CK
tMOD Timing
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
76
DDR3 SDRAM Mode Register 0 [MR0]
The Mode Register MR0 stores the data for controlling various operating modes of DDR3 SDRAM.
It controls burst length, read burst type, /CAS latency, test mode, DLL reset, WR and DLL control for precharge
power-down, which include various vendor specific options to make DDR3 SDRAM useful for various applications.
The mode register is written by asserting low on /CS, /RAS, /CAS, /WE, BA0 and BA1, while controlling the states of
address pins according to the table below.
Notes: 1. BA2, A13 and A14 are reserved for future use and must be programmed to 0 during MRS.
2. WR (min.) (Write Recovery for autoprecharge) is determined by tCK (max.) and WR (max.) is determined by tCK (min.).
WR in clock cycles is calculated by dividing tWR (in ns) by tCK (in ns) and rounding up to the next integer
(WR (min.) [cycles] = roundup tWR (ns) / tCK (ns)).
(The WR value in the mode register must be programmed to be equal or larger than WR (min.)
This is also used with tRP to determine tDAL.
0 PPD
BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address field
0
BA1
0*
1
BA2
0*
1
A13
WR
A8
0
1
DLL reset
No
Yes
DLL TM /CAS latency RBT CL BL Mode register 0
A7
0
1
Mode
Normal
Test
A6
0
0
0
0
1
1
1
1
/CAS latency
A5
0
0
1
1
0
0
1
1
A4
0
1
0
1
0
1
0
1
Latency
Reserved
5
6
7
8
9
10
11
A2
0
0
0
0
0
0
0
0
A3
0
1
Read burst type
Nibble sequential
Interleave
A12
0
1
DLL Control for Precharge PD
Slow exit (DLL off)
Fast exit (DLL on)
Burst length
A11
0
0
0
0
1
1
1
1
Write recovery for autoprecharge
A10
0
0
1
1
0
0
1
1
A9
0
1
0
1
0
1
0
1
WR
Reserved
5*
2
6*
2
7*
2
8*
2
10*
2
12*
2
Reserved
BA1
0
0
1
1
MRS mode
MR0
MR1
MR2
MR3
BA0
0
1
0
1
A1
0
0
1
1
BL
8 (Fixed)
4 or 8 (on the fly)
4 (Fixed)
Reserved
A0
0
1
0
1
A14
MR0 Programming
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
77
DDR3 SDRAM Mode Register 1 [MR1]
The Mode Register MR1 stores the data for enabling or disabling the DLL, output driver strength, RTT_Nom
impedance, additive latency, write leveling enable, TDQS enable and Qoff. The Mode Register 1 is written by
asserting low on /CS, /RAS, /CAS, /WE, high on BA0 and low on BA1, while controlling the states of address pins
according to the table below.
Notes: 1. BA2, A8, A10, A13 and A14 are reserved for future use (RFU) and must be programmed to 0 during MRS.
2. Outputs disabled - DQ, DQS, /DQS.
3. RZQ = 240Ω
4. If RTT_Nom is used during writes, only the values RZQ/2, RZQ/4 and RZQ/6 are allowed.
5. In write leveling mode (MR1[bit7] = 1) with MR1[bit12] = 1, all RTT_Nom settings are allowed;
in write leveling mode (MR1[bit7] = 1) with MR1[bit12] = 0, only RTT_Nom settings of RZQ/2,
RZQ/4 and RZQ/6 are allowed
BA0BA1 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address field
1
A14
0*1
0
BA2
0*10*10*1
Level
Rtt_Nom
D.I.C AL
Rtt_NomRtt_Nom
D.I.C DLL Mode register 1
A11
0
1
TDQS enable
Disabled
Enabled A0
0
1
DLL enable
Enable
Disable
A6
0
0
1
1
0
0
1
1
A9
0
0
0
0
1
1
1
1
A2
0
1
0
1
0
1
0
1
RTT_Nom*
5
ODT Disabled
RZQ/4
RZQ/2
RZQ/6
RZQ/12
*4
RZQ/8
*4
Reserved
Reserved
A1
0
1
0
1
A5
0
0
1
1
Output driver
impedance control
RZQ/6
RZQ/7
Reserved
Reserved
TDQS
Qoff
A12
0
1
Qoff
Output buffers enabled
Output buffers disabled
*2
A7
0
1
Write leveling enable
Disabled
Enabled
A4
0
0
1
1
Additive Latency
0 (AL disabled)
CL-1
CL-2
Reserved
A3
0
1
0
1
A13
MR1 Programming
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
78
DDR3 SDRAM Mode Register 2 [MR2]
The Mode Register MR2 stores the data for controlling refresh related features, RTT_WR impedance and /CAS write
latency (CWL). The Mode Register 2 is written by asserting low on /CS, /RAS, /CAS, /WE, high on BA1 and low on
BA0, while con-trolling the states of address pins according to the table below.
Address field
A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0BA1BA2 BA0 A12
0*
1
Mode register 2
0*
1
0*
12
PASR*SRTRtt_WR*
2
01 ASR CWL
A13
Notes: 1. BA2, A8, and A11 to A14 are RFU and must be programmed to 0 during MRS.
2. The Rtt_WR value can be applied during writes even when Rtt_Nom is desabled.
During write leveling, Dynamic ODT is not available.
3. Optional in DDR3 SDRAM: If PASR (Partial Array Self-Refresh) is enabled, data located in areas of the array beyond
the specified address range will be lost if self-refresh is entered. Data integrity will be maintained if tREF conditions are
met and no self-refresh command is issued.
A1
0
0
1
1
0
0
1
1
A2
0
0
0
0
1
1
1
1
Full
Half : Bank 0 to Bank 3
Quarter: Bank 0 and Bank 1
1/8 : Bank 0
3/4 : Bank 2 to Bank 7
Half : Bank 4 to Bank 7
Quarter: Bank 6 and Bank 7
1/8 : Bank 7
A0
0
1
0
1
0
1
0
1
(BA [2:0] = 000, 001, 010, 011)
(BA [2:0] = 000, 001)
(BA [2:0] = 000)
(BA [2:0] = 010, 011, 100, 101,110 ,111)
(BA [2:0] = 100, 101, 110, 111)
(BA [2:0] = 110, 111)
(BA [2:0] = 111)
Partial array self-refresh
Refresh array
A7
0
Self-refresh range
Normal self-refresh
Extend temperature
self-refresh
A6
0
1
Auto self-refresh method
Manual SR reference
(SRT)
ASR enable
(Optional)
A5
0
0
0
0
1
1
1
1
A4
0
0
1
1
0
0
1
1
A3
0
1
0
1
0
1
0
1
CAS write Latency (CWL)
5 (tCK ≥ 2.5ns)
6 (2.5ns > tCK ≥ 1.875ns)
7 (1.875ns > tCK ≥ 1.5ns)
8 (1.5ns > tCK ≥ 1.25ns)
Reserved
Reserved
Reserved
Reserved
A9
0
1
0
1
A10
0
0
1
1
Rtt_WR
Dynamic ODT off (write does not
affect Rtt value)
RZQ/4
RZQ/2
Reserved
1
A14
MR2 Programming
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
79
DDR3 SDRAM Mode Register 3 [MR3]
The Mode Register MR3 controls Multi Purpose Registers (MPR). The Mode Register 3 is written by asserting low
on /CS, /RAS, /CAS, /WE, high on BA1 and BA0, while controlling the states of address pins according to the table
below.
Mode register 3
0*1
11
Address field
A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0BA1BA2 BA0 A12
MPR MPR Loc
A13
Notes : 1. BA2, A3 to A14 are reserved for future use (RFU) and must be programmed to 0 during MRS.
2. The predefined pattern will be used for read synchronization.
3 . When MPR control is set for normal operation, MR3 A[2]=0, MR3 A[1:0] will be ignored.
A2
0
1
MPR
Normal operation
*
3
Data flow from MPR
A1
0
0
1
1
MPR location
Predefined pattern
*
2
RFU
RFU
RFU
A0
0
1
0
1
MPR Address
MPR Operation
A14
0*
MR3 Programming
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
80
Burst Length (MR0)
Read and write accesses to the DDR3 are burst oriented, with the burst length being programmable, as shown in the
figure MR0 Programming. The burst length determines the maximum number of column locations that can be
accessed for a given read or write command. Burst length options include fixed BC4, fixed BL8, and on the fly which
allows BC4 or BL8 to be selected coincident with the registration of a read on write command Via A12 (/BC).
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
Burst Chop
In case of burst length being fixed to 4 by MR0 setting, the internal write operation starts two clock cycles earlier than
for the BL8 mode. This means that the starting point for tWR and tWTR will be pulled in by two clocks. In case of
burst length being selected on the fly via A12(/BC), the internal write operation starts at the same point in time like a
burst of 8 write operation. This means that during on-the-fly control, the starting point for tWR and tWTR will not be
pulled in by two clocks.
Burst Type (MR0)
[Burst Length and Sequence]
Burst length Operation Starting address
(A2, A1, A0)
Sequential addressing
(decimal)
Interleave addressing
(decimal)
4 (Burst chop) READ 000 0, 1, 2, 3, T, T, T, T 0, 1, 2, 3, T, T, T, T
001 1, 2, 3, 0, T, T, T, T 1, 0, 3, 2, T, T, T, T
010 2, 3, 0, 1, T, T, T, T 2, 3, 0, 1, T, T, T, T
011 3, 0, 1, 2, T, T, T, T 3, 2, 1, 0, T, T, T, T
100 4, 5, 6, 7, T, T, T, T 4, 5, 6, 7, T, T, T, T
101 5, 6, 7, 4, T, T, T, T 5, 4, 7, 6, T, T, T, T
110 6, 7, 4, 5, T, T, T, T 6, 7, 4, 5, T, T, T, T
111 7, 4, 5, 6, T, T, T, T 7, 6, 5, 4, T, T, T, T
WRITE 0VV 0, 1, 2, 3, X, X, X, X 0, 1, 2, 3, X, X, X, X
1VV 4, 5, 6, 7, X, X, X, X 4, 5, 6, 7, X, X, X, X
8 READ 000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7
001 1, 2, 3, 0, 5, 6, 7, 4 1, 0, 3, 2, 5, 4, 7, 6
010 2, 3, 0, 1, 6, 7, 4, 5 2, 3, 0, 1, 6, 7, 4, 5
011 3, 0, 1, 2, 7, 4, 5, 6 3, 2, 1, 0, 7, 6, 5, 4
100 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3
101 5, 6, 7, 4, 1, 2, 3, 0 5, 4, 7, 6, 1, 0, 3, 2
110 6, 7, 4, 5, 2, 3, 0, 1 6, 7, 4, 5, 2, 3, 0, 1
111 7, 4, 5, 6, 3, 0, 1, 2 7, 6, 5, 4, 3, 2, 1, 0
WRITE VVV 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7
Remark: T: Output driver for data and strobes are in high impedance.
V: A valid logic level (0 or 1), but respective buffer input ignores level on input pins.
X: Don’t Care.
Notes: 1. Page length is a function of I/O organization and column addressing
2. 0...7 bit number is value of CA [2:0] that causes this bit to be the first read during a burst.
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Data Sheet E1797E41 (Ver. 4.1)
81
DLL Enable (MR1)
The DLL must be enabled for normal operation. DLL enable is required during power-up initialization, and upon
returning to normal operation after having the DLL disabled. The DLL is automatically disabled when entering self-
refresh operation and is automatically re-enabled upon exit of self-refresh operation. Any time the DLL is enabled
and subsequently reset, tDLLK clock cycles must occur before a read or synchronous ODT command can be issued
to allow time for the internal clock to be synchronized with the external clock. Failing to wait for synchronization to
occur may result in a violation of the tDQSCK, tAON or tAOF parameters. During tDLLK, CKE must continuously be
registered high.
DDR3 SDRAM does not require DLL for any write operation. DDR3 does not require DLL to be locked prior to any
write operation. DDR3 requires DLL to be locked only for read operation and to achieve synchronous ODT timing.
DLL-off Mode
DDR3 DLL-off mode is entered by setting MR1 bit A0 to 1; this will disable the DLL for subsequent operations until
A0 bit set back to 0. The MR1 A0 bit for DLL control can be switched either during initialization or later.
The DLL-off mode operations listed below are an optional feature for DDR3. The maximum clock frequency for DLL-
off mode is specified by the parameter tCKDLL_OFF. There is no minimum frequency limit besides the need to
satisfy the refresh interval, tREFI.
Due to latency counter and timing restrictions, only one value of /CAS Latency (CL) in MR0 and CAS Write Latency
(CWL) in MR2 are supported. The DLL-off mode is only required to support setting of both CL = 6 and CWL = 6.
DLL-off mode will affect the Read data Clock to Data Strobe relationship (tDQSCK) but not the Data Strobe to Data
relationship (tDQSQ, tQH, tQHS). Special attention is needed to line up Read data to controller time domain.
Comparing with DLL-on mode, where tDQSCK starts from the rising clock edge (AL + CL) cycles after the Read
command, the DLL-off mode tDQSCK starts (AL + CL − 1) cycles after the read command. Another difference is that
tDQSCK may not be small compared to tCK (it might even be larger than tCK) and the difference between tDQSCK
(min.). and tDQSCK (max.) is significantly larger than in DLL-on mode.
The timing relations on DLL-off mode READ operation are shown at following Timing Diagram (CL = 6, BL8):
CK, /CK
Command
BA
DQSdiff_DLL-on
DQ_DLL-on
DQSdiff_DLL-off
DQ_DLL-off
DQSdiff_DLL-off
DQ_DLL-off
READ
A
CA0 CA1 CA2 CA3 CA4 CA5 CA6 CA7
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
RL = AL + CL = 6 (CL = 6, AL = 0)
RL (DLL-off) = AL + (CL - 1) = 5
tDQSCK(DLL-off)_min
tDQSCK(DLL-off)_max
CL = 6
CA0 CA1 CA2 CA3 CA4 CA5 CA6 CA7
CA1 CA2 CA3 CA4 CA5 CA6 CA7CA0
DLL-Off Mode Read Timing Operation
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Data Sheet E1797E41 (Ver. 4.1)
82
DLL on/off switching procedure
DDR3 DLL-off mode is entered by setting MR1 bit A0 to “1”; this will disable the DLL for subsequent operations until
A0 bit set back to “0”.
DLL “on” to DLL “off” Procedure
To switch from DLL “on” to DLL “off” requires the frequency to be changed during self-refresh outlined in the
following procedure:
1. Starting from Idle state (all banks pre-charged, all timings fulfilled, and DRAMs On-die Termination resistors,
RTT, must be in high impedance state before MRS to MR1 to disable the DLL.)
2. Set MR1 Bit A0 to “1” to disable the DLL.
3. Wait tMOD.
4. Enter self-refresh mode; wait until (tCKSRE) satisfied.
5. Change frequency, in guidance with Input Clock Frequency Change during Precharge Power-Down section.
6. Wait until a stable clock is available for at least (tCKSRX) at DRAM inputs. After stable clock, wait tCKSRX
before issuing SRX command.
7. Starting with the self-refresh exit command, CKE must continuously be registered high until all tMOD timings from
any MRS command are satisfied. In addition, if any ODT features were enabled in the mode registers when self-
refresh mode was entered, the ODT signal must continuously be registered low until all tMOD timings from any
MRS command are satisfied. If both ODT features were disabled in the mode registers when self-refresh mode
was entered, ODT signal can be registered low or high.
8. Wait tXS, then set mode registers with appropriate values (especially an update of CL, CWL and WR may be
necessary. A ZQCL command may also be issued after tXS).
9. Wait for tMOD, then DRAM is ready for next command.
Ta Tb Tc Tc+1Tc+2 TeTd Tf Tf+2Tf+1 Tg Tg+1 Th
CK
Command
CKE
ODT
/CK
MRS SRE NOP SRX MRS Valid
Change Frequency
tCKESR
tMOD tCKSRE tCKSRX tXS tMOD
DLL Switch Sequence from DLL-on to DLL-off
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Data Sheet E1797E41 (Ver. 4.1)
83
DLL “off” to DLL “on” Procedure
To Switch from DLL “off” to DLL “on” (with required frequency change) during Self-Refresh:
1. Starting from Idle state (all banks pre-charged, all timings fulfilled and DRAMs On-die Termination resistors (RTT)
must be in high impedance state before Self-Refresh mode is entered.)
2. Enter Self-refresh Mode, wait until tCKSRE satisfied.
3. Change frequency, in guidance with Input Clock Frequency Change during Precharge Power-Down section.
4. Wait until a stable clock is available for at least (tCKSRX) at DRAM inputs.
5. Starting with the self-refresh exit command, CKE must continuously be registered high until all tDLLK timing from
subsequent DLL Reset command is satisfied. In addition, if any ODT features were enabled in the mode
registers when self-refresh mode was entered, the ODT signal must continuously be registered low until tDLLK
timings from subsequent DLL Reset command is satisfied. If both ODT features are disabled in the mode
registers when Self-refresh mode was entered, ODT signal can be registered low or high.
6. Wait tXS, then set MR1 bit A0 to “0” to enable the DLL.
7. Wait tMRD, then set MR0 bit A8 to “1” to start DLL Reset.
8. Wait tMRD, and then set mode registers with appropriate values (especially an update of CL, CWL and WR may
be necessary. After tMOD is satisfied from any proceeding MRS command, a ZQCL command may also be
issued during or after tDLLK.)
9. Wait for tMOD, and then DRAM is ready for next command (remember to wait tDLLK after DLL Reset before
applying command requiring a locked DLL). In addition, wait also for tZQoper in case a ZQCL command was
issued.
CK
Command
CKE
ODT
/CK
Ta Tb TcTc+1Tc+2 TeTd Tf Tf+2Tf+1 Tg
Valid
MRS MRS
MRS
SRX
NOP
SRE
Change Frequency
tCKESR
ODTLoff + 1x tCK
tCKSRE tCKSRX tDLLK
tXS tMRD tMRD
DLL Switch Sequence from DLL-Off to DLL-On
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Data Sheet E1797E41 (Ver. 4.1)
84
Additive Latency (MR1)
A posted /CAS read or write command when issued is held for the time of the Additive Latency (AL) before it is
issued inside the device. The read or write posted /CAS command may be issued with or without auto precharge.
The Read Latency (RL) is controlled by the sum of AL and the /CAS latency (CL).
The value of AL is also added to compute the overall Write Latency (WL).
MRS (1) bits A4 and A3 are used to enable Additive latency.
MRS1
A4 A3 AL*
0 0 0 (posted CAS disabled)
0 1 CL − 1
1 0 CL − 2
1 1 Reserved
Note: AL has a value of CL − 1 or CL − 2 as per the CL value programmed in the /CAS latency MRS setting.
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Data Sheet E1797E41 (Ver. 4.1)
85
Write Leveling (MR1)
For better signal integrity, DDR3 memory module adopts fly by topology for the commands, addresses, control
signals and clocks. The fly by topology has benefits for reducing number of stubs and their length but in other
aspect, causes flight time skew between clock and strobe at every DRAM on DIMM. It makes Controller hard to
maintain tDQSS, tDSS and tDSH specification. Therefore, the controller should support ’write leveling’ in DDR3
SDRAM to compensate the skew.
Write leveling is a scheme to adjust DQS to CK relationship by the controller, with a simple feedback provided by the
DRAM. The memory controller involved in the leveling must have adjustable delay setting on DQS to align the rising
edge of DQS with that of the clock at the DRAM pin. DRAM asynchronously feeds back CK, sampled with the rising
edge of DQS, through the DQ bus. The controller repeatedly delays DQS until a transition from 0 to 1 is detected.
The DQS delay established through this exercise would ensure tDQSS, tDSS and tDSH specification. A conceptual
timing of this scheme is shown as below.
diff_Clock
Source
Destination
Push DQS to
capture 0-1 transition
diff_DQS
diff_Clock
diff_DQS
DQ
DQ
X0 0
X1 1
Write Leveling Concept
DQS, /DQS driven by the controller during leveling mode must be terminated by the DRAM, based on the ranks
populated. Similarly, the DQ bus driven by the DRAM must also be terminated at the controller.
One or more data bits should carry the leveling feedback to the controller across the DRAM configurations ×4, ×8.
DRAM Setting for Write Leveling and DRAM Termination Function in That Mode
DRAM enters into write leveling mode if A7 in MR1 set 1. And after finishing leveling, DRAM exits from write leveling
mode if A7 in MR1 set 0 (MR1 Setting Involved in the Leveling Procedure table).
Note that in write leveling mode, only DQS/DQS terminations are activated and deactivated via ODT pin, not like
normal operation (refer to the DRAM Termination Function in The Leveling Mode table)
[MR1 Setting Involved in the Leveling Procedure]
Function MR1 bit Enable Disable Note
Write leveling enable A7 1 0
Output buffer mode (Qoff) A12 0 1 1
Note: 1. Output buffer mode definition is consistent with DDR2
[DRAM Termination Function in The Leveling Mode]
ODT pin@DRAM DQS, /DQS termination DQs termination
De-asserted Off Off
Asserted On Off
Note: In write leveling mode with its output buffer disabled (MR1 [bit7] = 1 with MR1 [bit12] = 1) all RTT_Nom
settings are allowed; in write leveling mode with its output buffer enabled (MR1 [bit7] = 1 with MR1 [bit12] = 0)
only RTT_Nom settings of RZQ/2, RZQ/4 and RZQ/6 are allowed.
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Data Sheet E1797E41 (Ver. 4.1)
86
Write Leveling Procedure
Memory controller initiates leveling mode of all DRAMs by setting bit 7 of MR1 to 1. Since the controller levelizes
rank at a time, the output of other rank must be disabled by setting MR1 bit A12 to 1. Controller may assert ODT
after tMOD, time at which DRAM is ready to accept the ODT signal.
Controller may drive DQS low and /DQS high after a delay of tWLDQSEN, at which time DRAM has applied on-die
termination on these signals. After tWLMRD, controller provides a single DQS, /DQS edge which is used by the
DRAM to sample CK driven from controller. tWLMRD timing is controller dependent.
DRAM samples CK status with rising edge of DQS and provides feedback on all the DQ bits asynchronously after
tWLO timing. There is a DQ output uncertainty of tWLOE defined to allow mismatch on DQ bits; there are no read
strobes (DQS, /DQS) needed for these DQs. Controller samples incoming DQ and decides to increment or
decrement DQS delay setting and launches the next DQS, /DQS pulse after some time, which is controller
dependent.
Once a 0 to 1 transition is detected, the controller locks DQS delay setting and write leveling is achieved for the
device. The below figure describes detailed timing diagram for overall procedure and the timing parameters are
shown in below figure.
/CK
CK
Command
ODT
diff_DQS*
4
All DQs*
1
Notes:1. DDR3 SDRAM drives leveling feedback on all DQs.
2. MRS : Load MR1 to enter write leveling mode.
3. NOP : NOP or deselec
4. diff_DQS is the differential data strobe (DQS, /DQS). Timing reference points are the zero crossing. DQS is
shown with solid line, /DQS is shown with dotted line.
5. CK, /CK : CK is shown with solid dark line, where as /CK is drawn with dotted line.
6. DQS needs to fulfill minimum pulse width requirements tDQSH (min.) and tDQSL (min.) as defined for regular
writes; the max pulse width is system dependent.
tMOD
T1 T2
tWLO
tWLH
tWLS
tWLMRD tWLO
tWLOE
tDQSL (min.) tDQSH (min.) tDQSL (min.) tDQSH (min.)
tWLDQSEN
MRS
*
2NOP
*
4NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
*
3
tWLH
tWLS
*
5
*
2
*
3
*
6
*
6
Timing Details Write Leveli ng Sequence
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Data Sheet E1797E41 (Ver. 4.1)
87
Write Leveling Mode Exit
The following sequence describes how the write leveling mode should be exited:
1. After the last rising strobe edge(see T111), stop driving the strobe signals (see ~T128). Note: From now on, DQ
pins are in undefined driving mode, and will remain undefined, until tMOD after the respective MR command
(T145).
2. Drive ODT pin low (tIS must be satisfied) and continue registering low (see T128).
3. After the RTT is switched off: disable Write Level Mode via MR command (see T132).
4. After tMOD is satisfied (T145), any valid commands may be registered. (MR commands may already be issued
after tMRD (T136).
CK, /CK
RTT_DQS-/DQS
RTT_DQ
ODT
DQS-/DQS
DQ
T111 T112 T116 T117 T128 T131 T132 T136 T145
tODTL_off
tMRD
tMOD
tIS
tWLO + tWLOE
Command
BA
WL_off
MRS
1
Result = 1
Valid Valid
Valid
Valid
Timing Details Write Leveling Exit
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Data Sheet E1797E41 (Ver. 4.1)
88
TDQS, /TDQS function (MR1)
TDQS (Termination Data Strobe) is a feature of ×8 DDR3 SDRAM that provides additional termination resistance
outputs that may be useful in some system configurations.
TDQS is not supported in ×4 configurations. When enabled via the mode register, the same termination resistance
function is applied to the TDQS and /TDQS pins that are applied to the DQS and /DQS pins.
In contrast to the RDQS function of DDR2 SDRAM, TDQS provides the termination resistance function only. The
data strobe function of RDQS is not provided by TDQS.
The TDQS and DM functions share the same pin. When the TDQS function is enabled via the mode register, the DM
function is not supported. When the TDQS function is disabled, the DM function is provided and the /TDQS pin is
not used. See Table TDQS, /TDQS function for details.
The TDQS function is available in ×8 DDR3 SDRAM only and must be disabled via the mode register A11 = 0 in
MR1 for ×4 configurations.
[TDQS, /TDQS function]
A11@MR1 TDQS enable
0 Disable
1 Enable
Notes: 1. If TDQS is enabled, the DM function is disabled.
2. When not used, TDQS function can be disabled to save termination power.
3. TDQS function is only available for ×8 DRAM and must be disabled for ×4.
[Function matrix]
A11@MR1 (TDQS enable) DM/TDQS NU/ /TDQS
0 DM High-Z
1 TDQS /TDQS
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Data Sheet E1797E41 (Ver. 4.1)
89
Extended Temperature Usage (MR2)
[Mode Register Description]
Field Bits Description Description
ASR A6 0 Manual SR Reference (SRT)
1 ASR enable (Optional)
Auto self-refresh (ASR) (Optional)
when enabled, DDR3 SDRAM automatically
provides self-refresh power management functions
for all supported operating temperature values. If
not enabled, the SRT bit must be programmed to
indicate TC during subsequent self-refresh
operation
SRT A7 0 Normal operating temperature range
1 Extended operating temperature range
Self-Refresh Temperature (SRT) Range
If ASR = 0, the SRT bit must be programmed to
indicate TC during subsequent self-refresh
operation
If ASR = 1, SRT bit must be set to 0
Partial Array Self-Refresh (PASR)
Optional in DDR3 SDRAM: Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine
if DDR3 SDRAM devices support the following options or requirements referred to in this material. If PASR (Partial
Array Self-Refresh) is enabled, data located in areas of the array beyond the specified address range shown in
figure of MR2 programming will be lost if Self-Refresh is entered. Data integrity will be maintained if tREFI
conditions are met and no Self-Refresh command is issued.
/CAS Write Latency (CWL)
The /CAS Write Latency is defined by MR2 bits [A3, A5], as shown in figure of MR2 programming. /CAS Write
Latency is the delay, in clock cycles, between the internal Write command and the availability of the first bit of input
data. DDR3 SDRAM does not support any half-clock latencies. The overall Write Latency (WL) is defined as
Additive Latency (AL) + /CAS Write Latency (CWL); WL = AL + CWL. For more information on the sup-ported CWL
and AL settings based on the operating clock frequency, refer to “Standard Speed Bins”. For detailed Write operation
refer to “WRITE Operation”.
Auto Self-Refresh Mode - ASR Mode (optional)
DDR3 SDRAM provides an Auto Self-Refresh mode (ASR) for application ease. ASR mode is enabled by setting
MR2 bit A6 = 1 and MR2 bit A7 = 0. The DRAM will manage self-refresh entry in either the Normal or Extended
(optional) Temperature Ranges. In this mode, the DRAM will also manage self-refresh power consumption when the
DRAM operating temperature changes, lower at low temperatures and higher at high temperatures.
If the ASR option is not supported by the DRAM, MR2 bit A6 must be set to 0.
If the ASR mode is not enabled (MR2 bit A6 = 0), the SRT bit (MR2 A7) must be manually programmed with the
operating temperature range required during self-refresh operation.
Support of the ASR option does not automatically imply support of the Extended Temperature Range.
Self- Refresh Temperature Ran ge - SRT
If ASR = 0, the Self-Refresh Temperature (SRT) Range bit must be programmed to guarantee proper self-refresh
operation. If SRT = 0, then the DRAM will set an appropriate refresh rate for self-refresh operation in the Normal
Temperature Range. If SRT = 1 then the DRAM will set an appropriate, potentially different, refresh rate to allow
self-refresh operation in either the Normal or Extended Temperature Ranges. The value of the SRT bit can effect
self-refresh power consumption, please refer to the IDD table for details.
For parts that do not support the Extended Temperature Range, MR2 bit A7 must be set to 0 and the DRAM should
not be operated outside the Normal Temperature Range.
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Data Sheet E1797E41 (Ver. 4.1)
90
[Self-Refresh Mode Summary]
MR2
A6
A7
Self-refresh operation
Allowed operating temperature range
for self-refresh mode
0 0 Self-refresh rate appropriate for the Normal Temperature Range Normal (0°C to +85°C)
0 1
Self-refresh rate appropriate for either the Normal or Extended
Temperature Ranges. The DRAM must support Extended
Temperature Range. The value of the SRT bit can effect self-
refresh power consumption, please refer to the Self- refresh
Current for details.
Normal and Extended (0°C to +95°C)
1 0
ASR enabled (for devices supporting ASR and Normal
Temperature Range). Self-refresh power consumption is
temperature dependent
Normal (0°C to +85°C)
1 0
ASR enabled (for devices supporting ASR and Extended
Temperature Range). Self-refresh power consumption is
temperature dependent
Normal and Extended (0°C to +95°C)
1 1 Illegal
Dynamic ODT (Rtt_WR)
DDR3 SDRAM introduces a new feature “Dynamic ODT”. In certain application cases and to further enhance signal
integrity on the data bus, it is desirable that the termination strength of the DDR3 SDRAM can be changed without
issuing an MRS command. MR2 register locations A9 and A10 configure the Dynamic ODT settings. In write
leveling mode, only RTT_Nom is available. For details on Dynamic ODT operation, refer to “Dynamic ODT”.
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Data Sheet E1797E41 (Ver. 4.1)
91
Multi Purpose Register (MR 3)
The Multi Purpose Register (MPR) function is used to read out predefined system timing calibration bit sequence.
·
·
!
" ! #$ #$
! !
$%" $" $%&" '$%&
(
Conceptual Block Diagram of Multi Purpose Register
To enable the MPR, a Mode Register Set (MRS) command must be issued to MR3 register with bit A2 = 1. Prior to
issuing the MRS command, all banks must be in the idle state (all banks precharged and tRP/tRPA met). Once the
MPR is enabled, any subsequent READ or READA commands will be redirected to the multi purpose register. The
resulting operation when a READ or READA command is issued is defined by MR3 bits [A1: A0] when the MPR is
enabled. When the MPR is enabled, only READ or READA commands are allowed until a subsequent MRS
command is issued with the MPR disabled (MR3 bit A2=0). Power-down mode, self-refresh, and any other non-
READ/READA command are not allowed during MPR enable mode. The /RESET function is supported during MPR
enable mode.
[Functional Description of MR3 Bits for MPR]
MR3
A2 A [1:0]
MPR MPR-Loc Function Notes
0 Don’t care
(0 or 1)
Normal operation, no MPR transaction.
All subsequent reads will come from DRAM array.
All subsequent WRITEs will go to DRAM array.
1 MR3 A [1:0] Enable MPR mode, subsequent READ/READA commands defined by MR3 A [1:0]
bits. 1
Note: 1. See Available Data Locations and Burst Order Bit Mapping for Multi Purpose Register table
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Data Sheet E1797E41 (Ver. 4.1)
92
• One bit wide logical interface via all DQ pins during READ operation
Register Read on ×4:
DQ [0] drives information from MPR.
DQ [3:1] drive the same information as DQ [0].
Register Read on ×8:
DQ [0] drives information from MPR.
DQ [7:1] drive the same information as DQ [0].
Note: A standardization of which DQ is used by DDR3 SDRAM for MPR reads is strongly recommended to ensure
functionality also for AMB2 on DDR3 FB-DIMM.
• Addressing during Multi Purpose Register reads for all MPR agents:
BA [2:0]: don’t care.
A [1:0]: A [1:0] must be equal to ‘00’b. Data read burst order in nibble is fixed
A [2]:
For BL8, A [2] must be equal to 0.
Burst order is fixed to [0,1,2,3,4,5,6,7] *1
For Burst Chop 4 cases, the burst order is switched on nibble base
A [2] = 0, Burst order: 0,1,2,3 *1
A [2] = 1, Burst order: 4,5,6,7 *1
A [9:3]: don’t care
A10(AP): don’t care
A12(/BC): Selects burst chop mode on-the-fly, if enabled within MR0
A11: don’t care
• Regular interface functionality during register reads:
Support two burst ordering which are switched with A2 and A [1:0] = 00.
Support of read burst chop (MRS and on-the-fly via A12(/BC).
All other address bits (remaining column address bits including A10, all bank address bits) will be ignored by the
DDR3 SDRAM.
Regular read latencies and AC timings apply.
DLL must be locked prior to MPR Reads.
Note: Burst order bit 0 is assigned to LSB and burst order bit 7 is assigned to MSB of the selected MPR agent.
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Data Sheet E1797E41 (Ver. 4.1)
93
Functional Block Diagrams
Figures below provide functional block diagrams for the multi purpose register in ×4, ×8 DDR3 SDRAM.
Memory Array
Copy to
DQ[3:0]
QMPR
32
Read Path
DQ[3:0]
NibbleLane
8
4×8
4×8
DM
DQS
/DQS
Functional Block Diagram of Multi Purpose Register in ×4 DDR3 SDRAM
Memory Array
Copy to
DQ[7:0]
QMPR
64
Read Path
DQ[7:0]
ByteLane
8
8×8
8×8
DM
DQS
/DQS
Functional Block Diagram of Multi Purpose Register in ×8 DDR3 SDRAM
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Data Sheet E1797E41 (Ver. 4.1)
94
Register Address Table
The table below provides an overview of the available data locations, how they are addressed by MR3 A [1:0] during
a MR0 to MR3, and how their individual bits are mapped into the burst order bits during a multi purpose register
read.
[Available Data Locations and Burst Order Bit Mapping for Multi Purpose Register]
Note: 1. Burst order bit 0 is assigned to LSB and burst order bit 7 is assigned to MSB of the selected MPR agent.
Relevant Timing Parameters
The following AC timing parameters are important for operating the Multi Purpose Register: tRP, tMRD, tMOD and
tMPRR.
Besides these timings, all other timing parameters needed for proper operation of the DDR3 SDRAM need to be
observed.
[MPR Recovery Time tMPRR]
Symbol Description
tMPRR Multi Purpose Register Recovery Time, defined between end of MPR read burst and MRS which
reloads MPR or disables MPR function
MR3
A [2]
MR3
A [1:0] Function Burst
Length
Read
Address
A [2:0]
Burst Order and Data Pattern Notes
BL8 000
Burst order 0,1,2,3,4,5,6,7
Pre-defined pattern [0,1,0,1,0,1,0,1] 1
BC4 000
Burst order 0,1,2,3,
Pre-defined pattern [0,1,0,1] 1
1 00
Read predefined
pattern for
system
calibration BC4 100
Burst order 4,5,6,7
Pre-defined pattern [0,1,0,1] 1
BL8 000 Burst order 0,1,2,3,4,5,6,7 1
BC4 000 Burst order 0,1,2,3 1
1 01 RFU
BC4 100 Burst order 4,5,6,7 1
BL8 000 Burst order 0,1,2,3,4,5,6,7 1
BC4 000 Burst order 0,1,2,3 1
1 10 RFU
BC4 100 Burst order 4,5,6,7 1
BL8 000 Burst order 0,1,2,3,4,5,6,7 1
BC4 000 Burst order 0,1,2,3, 1
1 11 RFU
BC4 100 Burst order 4,5,6,7 1
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Data Sheet E1797E41 (Ver. 4.1)
95
Protocol Examples
Protocol Example: Read Ou t Predetermined Read-Calibration Pattern
Multiple reads from Multi Purpose Register, in order to do system level read timing calibration based on
predetermined and standardized pattern.
Protocol Steps:
• Precharge All
• Wait until tRP is satisfied
• MRS MR3, op-code “A2 = 1 “ and “A[1:0] = 00“
Redirect all subsequent reads into the Multi Purpose Register, and load Pre-defined pattern into MPR.
• Wait until tMRD and tMOD are satisfied (Multi Purpose Register is then ready to be read). During the period
MR3 A2 =1, no data write operation is allowed.
• Read:
A [1:0] = ‘00’ (Data burst order is fixed starting at nibble, always 00 here)
A [2] = ‘0’ (For BL8, burst order is fixed as 0,1,2,3,4,5,6,7)
A12(/BC) = 1 (use regular burst length of 8)
All other address pins (including BA [2:0] and A10(AP)): don’t care.
• After RL = AL + CL, DRAM bursts out the predefined Read Calibration Pattern.
• Memory controller repeats these calibration reads until read data capture at memory controller is optimized.
• After end of last MPR read burst wait until tMPRR is satisfied.
• MRS MR3, op-code “A2 = 0“ and “A[1:0] = valid data but value are don’t care“
All subsequent read and write accesses will be regular READs and WRITEs from/to the DRAM array.
• Wait until tMRD and tMOD are satisfied
• Continue with “regular” DRAM commands, like activate a memory bank for regular read or write access,
33
Valid
10
0*
2
00 00
Valid
10
Valid
00
Valid
*
1
00
Valid
00
Valid
0
Valid
0*
2
tMOD
*
1
tMRD
RL
Notes: 1. READ with BL8 either by MRS or OTF
2. Memory Control must drive 0 on A[2:0] VIH or VIL
CK
Command
BA
A[1:0]
A[2]
A[9:3]
A10(AP)
A[11]
A12(/BC)
A[15:13]
DQS, /DQS
DQ
tMPRR
PALL MRS
NOP NOP READ NOP
MRS
NOP
T0 T4 T5 T9 T17 T18 T19 T20 T21 T22 T23 T24 T25 T26 T27 T28 T29 T30 T31 T39
tRP tMOD
0
/CK
MPR Readout of Predefined Pattern, BL8 fixed Burst Order, Single Readout
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
96
tMOD
*1
tMRD
RL RL
Notes: 1. READ with BL8 either by MRS or OTF
2. Memory Control must drive 0 on A[2:0] VIH or VIL
CK
Command
BA
A[1:0]
A[2]
A[9:3]
A10, AP
A[11]
A12(/BC)
A[15:13]
DQS, /DQS
DQ
tMPRR
PALL MRS
NOP NOP READ MRS
NOP *1
READ NOP NOP
T0 T4 T5 T9 T17 T18 T19 T20 T21 T22 T23 T24 T25 T26 T27 T28 T29 T30 T31 T43
tRP tCCDtMOD
33
Valid Valid
00 00
Valid Valid
01 0
Valid Valid
00
Valid Valid
*1*1
00
Valid Valid
00
Valid Valid
0
Valid
0*20*2
1 00 *20*2
/CK
MPR Readout of Predefined Pattern, BL8 Fixed Burst Order, Back-to-Back Readout
T0 T4 T5 T9 T17 T18 T19 T20 T21 T22
tMOD
*1
*1*1
tMRD
33
Valid
0Valid
0
10
0
00 00
Valid
0
10
Valid
00
Valid
00
Valid
00
Valid
RL RL
Notes:1. READ with BC4 either by MRS or OTF
2. Memory Control must drive 0 on A[1:0]
3. A[2] = 0 selects lower 4 nibble bits 0 ... 3
4. A[2] = 1 selects upper 4 nibble bits 4 ... 7
CK
Command
BA
A[1:0]
A[2]
A[9:3]
A10(AP)
A[11]
A12(/BC)
A[15:13]
DQS, /DQS
DQ
tMPRR
PALL MRS
NOP NOP READ MRS
NOP *1
READ NOP NOP
T23 T24 T25 T26 T27 T28 T29 T30 T31 T43
tRP tCCD
tMOD
*2
*3
Valid
0
1
Valid
Valid
Valid
Valid
Valid
*2
*4
VIH or VIL
/CK
MPR Readout Predefined Pattern, BC4, Lower Nibble Then Upper Nibble
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
97
T0 T4 T5 T9 T17 T18 T19 T20 T21 T22 T23 T24 T25 T26 T27 T28 T29 T30 T31 T43
tMOD
*1
*1*1
tMRD
33
Valid
0
Valid
0
10
1
00 00
Valid
0
10
Valid
00
Valid
00
Valid
00
Valid
RL RL
Notes:1. READ with BC4 either by MRS or OTF
2. Memory Control must drive 0 on A[1:0]
3. A[2] = 0 selects lower 4 nibble bits 0 ... 3
4. A[2] = 1 selects upper 4 nibble bits 4 ... 7
CK, /CK
Command
BA
A[1:0]
A[2]
A[9:3]
A10, AP
A[11]
A12(/BC)
A[15:13]
DQS, /DQS
DQ
tMPRR
PALL MRS
NOP NOP READ
MRS
NOP
*1
READ NOP
NOP
tRP tCCD
tMOD
*2
*4
Valid
0
0
Valid
Valid
Valid
Valid
Valid
*2
*3
VIH or VIL
MPR Readout of Predefined Pattern, BC4, Upper Nibble Then Lower Nibble
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
98
Operation of the DDR3 SDRAM
Read Timing Definition
Read timing is shown in the following Figure and is applied when the DLL is enabled and locked.
Rising data strobe edge parameters:
• tDQSCK min/max describes the allowed range for a rising data strobe edge relative to CK, /CK.
• tDQSCK is the actual position of a rising strobe edge relative to CK, /CK.
• tQSH describes the DQS, /DQS differential output high time.
• tDQSQ describes the latest valid transition of the associated DQ pins.
• tQH describes the earliest invalid transition of the associated DQ pins.
Falling data strobe edge parameters:
• tQSL describes the DQS, /DQS differential output low time.
• tDQSQ describes the latest valid transition of the associated DQ pins.
• tQH describes the earliest invalid transition of the associated DQ pins.
tDQSQ; both rising/falling edges of DQS, no tAC defined.
CK
/DQS
Associated
DQ Pins
/CK
tDQSCK
tDQSCK
tQSL
tQSH
tQH
tDQSQ
tDQSQ
tQH
tDQSCK(max.)
tDQSCK(min.) tDQSCK(min.)
tDQSCK(max.)
DQS
Rising Strobe
Region
Rising Strobe
Region
Read Timing Definition
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
99
• CK, /CK crossing to DQS, /DQS crossing
• tDQSCK; rising edges only of CK and DQS
• tQSH; rising edges of DQS to falling edges of DQS
• tQSL; rising edges of / DQS to falling edges of /DQS
• tLZ (DQS), tHZ (DQS) for preamble/postamble (see tHZ (DQS), tLZ (DQS)
/CK
CK
DQS, /DQS
Early strobe
tRPRE tRPST
tLZ(DQS)(min.)
tDQSCK(min.) tDQSCK(min.) tDQSCK(min.)
DQS, /DQS
Late strobe
tDQSCK(min.)
tRPRE tRPST
tLZ(DQS)(max.) tHZ(DQS)(max.)
Bit0 Bit1 Bit2 Bit3 Bit4 Bit5 Bit6 Bit7
Bit0 Bit1 Bit2 Bit3 Bit4 Bit5 Bit6 Bit7
RL Measured to this point
tDQSCK(max.) tDQSCK(max.) tDQSCK(max.) tDQSCK(max.)
tQSH tQSL
tQSH tQSL
Notes: 1. Within a burst, rising strobe edge is not necessarily fixed to be always at tDQSCK (min.) or tDQSCK (max.). Instead, rising
strobe edge can vary between tDQSCK (min.) and tDQSCK (max.).
2. Notwithstanding note 1, a rising strobe edge with tDQSCK (max) at T (n) can not be immediately followed by a rising strobe
edge with tDQSCK (min.) at T (n+1). This is because other timing
relationships (tQSH, tQSL) exist:
if tDQSCK(n+1) < 0:
tDQSCK(n) < 1.0 tCK - (tQSHmin + tQSLmin) - | tDQSCK (n+1) |
3. The DQS, /DQS differential output high time is defined by tQSH and the DQS, /DQS differential output low time is defined by tQSL.
4. Likewise, tLZ (DQS)min and tHZ (DQS)min are not tied to tDQSCKmin (early strobe case) and tLZ (DQS) max and tHZ (DQS) max
are not tied to tDQSCKmax (late strobe case).
5. The minimum pulse width of read preamble is defined by tRPRE (min).
6. The maximum read postamble is bound by tDQSCK(min.) plus tQSH (min.) on the left side and tHZ(DQS)(max.) on the right side.
7. The minimum pulse width of read postamble is defined by tRPST (min.).
8. The maximum read preamble is bound by tLZ (DQS)(min.) on the left side and tDQSCK (max.) on the right side.
DDR3 Clock to Data Strobe Relationship
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
100
• DQS, /DQS crossing to Data Output
• tDQSQ; both rising/falling edges of DQS, no tAC defined
Notes: 1. BL8, RL = 5(AL = 0, CL = 5).
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] and A12 = 1 during READ command at T0.
5. Output timings are referenced to VDDQ/2, and DLL on for locking.
6. tDQSQ defines the skew between DQS, /DQS to data and does not define DQS, /DQS to clock.
7. Early data transitions may not always happen at the same DQ.
Data transitions of a DQ can vary(either early or late) within a busy.
VIH or VIL
READ
CK
/CK T0 T5 T7 T9 T10T4 T6 T8
Command*3
DQS, /DQS
DQ*2
(Last data valid)
NOP
Address*4 Bank
Coln
DQ*2
(First data no longer valid)
All DQS collectively
tRPST
RL = AL + CL
tQH tQH
tRPRE
tDQSQ(max.)
Dout
nDout
n+1 Dout
n+2 Dout
n+3 Dout
n+4 Dout
n+5 Dout
n+6 Dout
n+7
Data valid Data valid
Dout
nDout
n+1 Dout
n+2 Dout
n+3 Dout
n+4 Dout
n+5 Dout
n+6 Dout
n+7
Dout
nDout
n+1 Dout
n+2 Dout
n+3 Dout
n+4 Dout
n+5 Dout
n+6 Dout
n+7
tLZ(DQ)(min.)
tLZ(DQ)(max.) tHZ(DQ)(max.)
tDQSQ(max.)
DDR3 Data Strobe to Data Relationship
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
101
tLZ (DQS), tLZ (DQ), tHZ (DQS), tHZ (DQ) Notes
tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to
a specific voltage level which specifies when the device output is no longer driving tHZ(DQS) and tHZ(DQ), or begins
driving tLZ(DQS), tLZ(DQ). The figure below shows a method to calculate the point when device is no longer driving
tHZ(DQS) and tHZ(DQ), or begins driving tLZ(DQS), tLZ(DQ) by measuring the signal at two different voltages. The
actual voltage measurement points are not critical as long as the calculation is consistent. The parameters
tLZ(DQS), tLZ(DQ), tHZ(DQS), and tHZ(DQ) are defined as singled ended.
VOH − x mV
VOH − 2x mV
VOL + 2x mV
VOL + x mV
tHZ(DQS), tHZ(DQ)
tHZ(DQS), tHZ(DQ) end point = 2 × T1 - T2
T1
T2
tLZ(DQS), tLZ(DQ)
tLZ(DQS), tLZ(DQ) begin point = 2 × T1 - T2
tLZ(DQS): CK-/CK rising crossing at RL − 1
tLZ(DQ): CK-/CK rising crossing at RL
VTT + 2x mV
VTT + x mV
VTT − x mV
VTT − 2x mV
T2
T1
CK
/CK
tLZ
tHZ(DQS), tHZ(DQ) with BL8: CK-/CK rising crossing at RL + 4nCK
tHZ(DQS), tHZ(DQ) with BL4: CK-/CK rising crossing at RL + 2nCK
CK
/CK
tHZ
Method for Calculating Transitions and Endpoints
tRPRE Calculation
The method for calculating differential pulse widths for tRPRE is shown as follows.
CK
DQS
Single ended signal, provided
as background information
Single ended signal, provided
as background information
Resulting differential signal,
relevant for tRPRE
specification
tA
tC
tB
tD
/DQS
DQS - /DQS
t1
tRPRE_begin
t2
tRPRE_end
tRPRE
/CK
VTT
VTT
VTT
0V
Method for Calculating tRPRE Transitions and Endpoint
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
102
tRPST Calculation
The method for calculating differential pulse widths for tRPST is shown as follows.
CK
DQS
Single ended signal, provided
as background information
Single ended signal, provided
as background information
Resulting differential signal,
relevant for tRPST
specification
tA
tC
tB
tD
/DQS
DQS - /DQS
t1
tRPST_begin
t2
tRPST_end
tRPST
/CK
VTT
VTT
VTT
0V
Method for Calculating tRPST Transitions and Endpoint
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
103
Read Operation
During read or write command DDR3 will support BC4 and BL8 on the fly using address A12 during the READ or
WRITE (auto precharge can be enabled or disabled).
• A12 = 0, BC4 (BC4 = burst chop, tCCD = 4)
• A12 = 1, BL8
A12 will be used only for burst length control, not a column address.
The Burst Read command is initiated by having /CS and /CAS low while holding /RAS and /WE high at the rising
edge of the clock. The address inputs determine the starting column address for the burst. The delay from the start
of the command to when the data from the first cell appears on the outputs is equal to the value of the read latency
(RL). The data strobe output (DQS) is driven low 1 clock cycle before valid data (DQ) is driven onto the data bus.
The first bit of the burst is synchronized with the rising edge of the data strobe (DQS). Each subsequent data-out
appears on the DQ pin in phase with the DQS signal in a source synchronous manner.
The RL is equal to an additive latency (AL) plus /CAS latency (CL). The CL is defined by the Mode Register 0 (MR0),
similar to the existing SDR and DDR-I SDRAMs. The AL is defined by the Mode Register 1.
READ
/CK
CK T0 T2 T4 T6 T8 T10T1 T3 T5 T7 T9 T11
Command*
3
DQS, /DQS
DQ*
2
NOP
CL = 5
Address*
4
Bank
Col n
Dout
nDout
n+1 Dout
n+2 Dout
n+3 Dout
n+4 Dout
n+5 Dout
n+6 Dout
n+7
tRPRE tRPST
RL = AL + CL
Notes: 1. BL8, AL = 0, RL = 5, CL = 5
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
VIH or VIL
Burst Read Operation, RL = 5
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
104
READ
/CK
CK T0 T2 T4 T6 T8 T10T1 T3 T5 T7 T9 T11 T12 T13
Command*3
DQS, /DQS*2
DQ
NOP
AL = 4
tRPRE
RL = AL + CL
Dout
nDout
n+1 Dout
n+2 Dout
n+3 Dout
n+4 Dout
n+5 Dout
n+6 Dout
n+7
CL = 5
tRPST
Bank
Col n
Notes: 1. BL8, RL = 9, AL = (CL − 1), CL = 5
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
VIH or VIL
Address*4
Burst Read Operation, RL = 9
READ READ
NOP
/CK
CK T0 T4T3 T6 T8 T10 T12T5 T7 T9 T11 T13 T14
Command*3
DQS, /DQS
DQ*2
RL = 5
tCCD
tRPRE
RL = 5
Dout
n+2 Dout
n+3 Dout
n+4 Dout
n+5 Dout
n+6 Dout
n+7
Dout
nDout
n+1 Dout
b+2 Dout
b+3 Dout
b+4 Dout
b+5 Dout
b+6 Dout
b+7
Dout
bDout
b+1
tRPST
Notes: 1. BL8, RL = 5 (CL = 5, AL = 0).
2. Dout n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0 and T4.
VIH or VIL
Address*4
NOP
Bank
Col n Bank
Col b
Read (BL8) to Read (BL8)
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
105
READ NOP
/CK
CK
T0 T4T3 T6 T8 T10 T12T5 T7 T9 T11 T13 T14
Command*3
DQS, /DQS
DQ*2
RL = 5
tCCD = 5
tRPRE
RL = 5
Dout
n+2
Dout
n+3
Dout
n+4
Dout
n+5
Dout
n+6
Dout
n+7
Dout
n
Dout
n+1
Dout
b+2
Dout
b+3
Dout
b+4
Dout
b+5
Dout
b+6
Dout
b+7
Dout
b
Dout
b+1
Notes: 1. BL8, RL = 5 (CL = 5, AL = 0), tCCD = 5.
2. Dout n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0 and T4.
5. DQS-/DQS is held logic low at T9.
VIH or VIL
Address*4
NOP
Bank
Col n Bank
Col b
READ
tRPST
NOP
Nonconsecutive Read (BL8) to Read (BL8), tCCD = 5
READ READ
NOP
/CK
CK T0 T4 T6 T8 T10 T12T5 T7 T9 T11 T13 T14
Command*3
DQS, /DQS
DQ*2
RL = 5
tCCD
tRPRE tRPRE
RL = 5
Dout
n+2 Dout
n+3
Dout
nDout
n+1 Dout
b+2 Dout
b+3
Dout
bDout
b+1
tRPST
Bank
Col n Bank
Col b
Notes: 1. BC4, RL = 5 (CL = 5, AL = 0).
2. Dout n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [1, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 0 during READ command at T0 and T4.
VIH or VIL
tRPST
Address*4
NOP
Read (BC4) to Read (BC4)
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
106
READ WRIT
NOP
/CK
CK T0 T4T3 T6 T8 T10 T12T5 T7 T9 T11 T13 T14 T15
Command*3
DQS, /DQS
RL = 5
READ to WRIT command delay = RL + tCCD + 2tCK − WL
tRPRE tWPRE
WL = 5
tBL = 4 clocks tWR
Bank
Col n Bank
Col b
Notes: 1. BL8, RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0).
2. Dout n = data-out from column n, Din b= data-in from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0 and WRIT command T6.
VIH or VIL
Address*4
NOP
tWTR
DQ*2
tRPST
Dout
n+2 Dout
n+3 Dout
n+4 Dout
n+5 Dout
n+6 Dout
n+7
Dout
nDout
n+1 Din
b+2 Din
b+3 Din
b+4 Din
b+5 Din
b+6 Din
b+7
Din
b+1
Din
b
tWPST
Read (BL8) to Write (BL8)
READ WRIT
NOP
/CK
CK T0 T4T3 T6 T8 T10 T12T5 T7 T9 T11 T13 T14 T15
Command*
3
DQS, /DQS
RL = 5
READ to WRIT Command delay = RL + tCCD/2 + 2tCK − WL
tRPRE tWPRE
WL = 5
tBL = 4 clocks
Bank
Col n Bank
Col b
Notes: 1. BC4, RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0).
2. Dout n = data-out from column n, Din b= data-in from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during READ command at T0 and WRIT command T4.
VIH or VIL
Address*
4
NOP
DQ*
2
tRPST
Dout
n+2 Dout
n+3
Dout
nDout
n+1 Din
b+2 Din
b+3
Din
b+1
Din
b
tWPST
tWR
tWTR
Read (BC4) to Write (BC4) OTF
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
107
READ READ
NOP
/CK
CK T0 T4 T6 T8 T10 T12T5 T7 T9 T11 T13 T14
Command*
3
DQS, /DQS
DQ*
2
RL = 5
tCCD
tRPRE
RL = 5
Dout
n+2 Dout
n+3 Dout
n+4 Dout
n+5 Dout
n+6 Dout
n+7
Dout
nDout
n+1 Dout
b+2 Dout
b+3
Dout
bDout
b+1
Notes: 1. RL = 5 (CL = 5, AL = 0).
2. Dout n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during READ command at T4.
BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
VIH or VIL
Address*
4
NOP
Bank
Col n Bank
Col b
tRPST
Read (BL8) to Read (BC4) OTF
READ READ
NOP
CK
/CK
T0 T4 T6 T8 T10 T12T5 T7 T9 T11 T13 T14
Command*3
DQS, /DQS
DQ*2
RL = 5
tCCD
tRPRE tRPRE
RL = 5
Dout
n+2 Dout
n+3
Dout
nDout
n+1 Dout
b+2 Dout
b+3
Dout
bDout
b+1 Dout
b+4 Dout
b+5 Dout
b+6 Dout
b+7
Notes: 1. RL = 5 (CL = 5, AL = 0).
2. Dout n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during READ command at T0.
BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T4.
VIH or VIL
Address*4
NOP
tRPST tRPST
Bank
Col n Bank
Col b
Read (BC4) Read (BL8) OTF
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
108
READ WRIT
NOP
/CK
CK T0 T4T3 T6 T8 T10 T12T5 T7 T9 T11 T13 T14 T15
Command*3
DQS, /DQS
RL = 5
tRPRE tWPRE
WL = 5
tBL = 4 clocks
Bank
Col n Bank
Col b
Notes: 1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0).
2. Dout n = data-out from column n , Din b= data-in from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during READ command at T0.
BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T4.
VIH or VIL
Address*4
NOP
DQ*2
tRPST
Dout
n+2 Dout
n+3
Dout
nDout
n+1 Din
b+2 Din
b+3
Din
b+1
Din
bDin
b+6 Din
b+7
Din
b+5
Din
b+4
tWPST
READ to WRIT command delay = RL + tCCD/2 + 2tCK − WL
tWR
tWTR
Read (BC4) to Write (BL8) OTF
READ WRIT
NOP
/CK
CK T0 T4T3 T6 T8 T10 T12T5 T7 T9 T11 T13 T14 T15
Command*3
DQS, /DQS
RL = 5
READ to WRIT command delay = RL + tCCD + 2tCK − WL
tRPRE tWPRE
WL = 5
Bank
Col n Bank
Col b
Notes: 1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0).
2. Dout n = data-out from column n, n Din b= data-in from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T6.
VIH or VIL
Address*4
NOP
DQ*2
tRPST
Dout
n+2 Dout
n+3 Dout
n+4 Dout
n+5 Dout
n+6 Dout
n+7
Dout
nDout
n+1 Din
b+2 Din
b+3
Din
b+1
Din
b
tWPST
tBL = 4 clocks tWR
tWTR
Read (BL8) to Write (BC4) OTF
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
109
READ PRE
/CK
CK T0 T2 T4 T6 T8 T10T1 T3 T5 T7 T9 T11
Command*
3
DQS, /DQS
DQ*
2
NOPNOP
CL = 5
Address*
4
Bank
Col n
Dout
nDout
n+1 Dout
n+2 Dout
n+3 Dout
n+4 Dout
n+5 Dout
n+6 Dout
n+7
tRPRE tRPST
RL = AL + CL
Notes: 1. BL8, AL = 0, RL = 5, CL = 5
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
VIH or VIL
tRTP = 4 nCK tRP
Burst Read Precharge Oper atio n, RL = 5
READ
/CK
CK T0 T2 T4 T6 T8 T10T1 T3 T5 T7 T9 T11 T12 T13
Command*
3
DQS, /DQS*
2
DQ
NOP
AL = 4
tRPRE
RL = AL + CL
Dout
nDout
n+1 Dout
n+2 Dout
n+3 Dout
n+4 Dout
n+5 Dout
n+6 Dout
n+7
CL = 5
tRPST
Bank
Col n
Notes: 1. BL8, RL = 9, AL = (CL
-
1), CL = 5
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
VIH or VIL
Address*
4
PRE
NOP
tRTP = 4 nCK
Internal Read command starls here
tRP
Burst Read Precharge Oper atio n, RL = 9
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
110
Write Timing Definition
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
WL = AL + CWL
tDQSS(min)
tDQSS(max)
tWPRE (min)
T10
tDQSS tDSH tDSH tDSH tDSH
tDQSH (min)
tDQSH
tDQSL
tDQSH
tDQSL
tDSS tDSS tDSS tDSS tDSS
NOP
WRIT NOP
NOP NOP NOP NOP NOP NOP NOP NOP
tWPST (min)
Notes: BL8, WL = 5 (AL = 0, CWL = 5)
1. Din n = data-in from column n. 2.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0.
4. tDQSS must be met at each rising clock edge.
5.
VIH or VIL
Command*
3
DQ*
2
DQS, /DQS
Address*
4
Din
nDin
n + 1 Din
n + 2 Din
n + 3 Din
n + 4 Din
n + 5 Din
n + 6 Din
n + 7
Bank,
Col n
tDQSH
tDQSL tDQSH
tDQSL (min)
tDQSL
tWPRE (min)
tDSH tDSH tDSH tDSH
tDQSH (min)
tDQSH
tDQSL
tDQSH
tDQSL
tDSS tDSS tDSS tDSS tDSS
tWPST (min)
DQ*
2
DQS, /DQS
Din
nDin
n + 1 Din
n + 2 Din
n + 3 Din
n + 4 Din
n + 5 Din
n + 6 Din
n + 7
tDQSH
tDQSL tDQSHtDQSL (min)
tDQSL
tWPRE (min)
tDQSS
tDSH tDSH tDSH tDSH
tDQSH (min)
tDQSH
tDQSL
tDQSH
tDQSL
tDSS tDSS tDSS tDSS tDSS
tWPST (min)
DQ*
2
DQS, /DQS
Din
nDin
n + 1 Din
n + 2 Din
n + 3 Din
n + 4 Din
n + 5 Din
n + 6 Din
n + 7
tDQSH
tDQSL tDQSH
tDQSL (min)
tDQSL
1
CK
/CK*
Write Timing Definition
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
111
tWPRE Calculation
The method for calculating differential pulse widths for tWPRE is shown as follows.
CK
Resulting differential signal,
relevant for tWPRE
specification
DQS - /DQS
t1
tWPRE_begin
t2
tWPRE_end
tWPRE
/CK
VTT
0V
Method for Calculating tWPRE Transitions and Endpoints
tWPST Calculation
The method for calculating differential pulse widths for tWPST is shown as follows.
CK
Resulting differential signal,
relevant for tWPST
specification
DQS - /DQS
t1
tWPST_begin
t2
tWPST_end
tWPST
/CK
VTT
0V
Method for Calculating tWPST Transitions and Endpoints
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
112
Write Operation
During read or write command DDR3 will support BC4 and BL8 on the fly using address A12 during the READ or
WRITE (auto precharge can be enabled or disabled).
• A12 = 0, BC4 (BC4 = burst chop, tCCD = 4)
• A12 = 1, BL8
A12 will be used only for burst length control, not a column address.
The Burst Write command is initiated by having /CS, /CAS and /WE low while holding /RAS high at the rising edge of
the clock. The address inputs determine the starting column address. Write latency (WL) is equal to (AL + CWL). A
data strobe signal (DQS) should be driven low (preamble) one clock prior to the WL. The first data bit of the burst
cycle must be applied to the DQ pins at the first rising edge of the DQS following the preamble. The tDQSS
specification must be satisfied for write cycles. The subsequent burst bit data are issued on successive edges of the
DQS until the burst length of 4 is completed. When the burst has finished, any additional data supplied to the DQ
pins will be ignored. The DQ Signal is ignored after the burst write operation is complete. The time from the
completion of the burst write to bank precharge is the write recovery time (tWR).
WRIT
/CK
CK T0 T2 T4 T6 T8 T10T1 T3 T5 T7 T9 T11 T12 T13
Command*
3
DQ*
2
NOP
tWPRE
WL = AL + CWL
Bank
Col n
Notes: 1. BL8, WL = 5 (AL = 0, CWL = 5)
2. Din n = data-in from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0.
VIH or VIL
Address*
4
DQS, /DQS
tWPST
Din
nDin
n+1 Din
n+2 Din
n+3 Din
n+4 Din
n+5 Din
n+6 Din
n+7
Burst Write Operation, WL = 5
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
113
WRIT
/CK
CK T0 T2 T4 T6 T8 T10T1 T3 T5 T7 T9 T11 T12 T13
Command*
3
DQ*
2
NOP
AL = 4
tWPRE
WL = AL + CWL
CWL = 5
tWPST
Bank
Col n
Notes: 1. BL8, WL = 9 (AL = (CL − 1), CL = 5, CWL = 5)
2. Din n = data-in from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRITcommand at T0.
VIH or VIL
Address*
4
Din
nDin
n+1 Din
n+2 Din
n+3 Din
n+4 Din
n+5 Din
n+6 Din
n+7
DQS, /DQS
Burst Write Operation, WL = 9
WRIT READ
/CK
CK T0 T2 T4 T6 T8 T10T1 T3 T5 T7 T9 Tn Tn+1 Tn+2
Command*
3
DQ*
2
NOP
tWPRE
Bank
Col n Bank
Col b
VIH or VIL
Address*
4
DQS, /DQS
Din
nDin
n+1 Din
n+2 Din
n+3
tWTR*
5
tWPST
WL = 5 RL = 5
Notes: 1. BC4, WL = 5, RL = 5.
2. Din n = data-in from column n; Dout b = data-out from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [1, 0] during WRIT command at T0 and READ command at Tn.
5. tWTR controls the write to read delay to the same device and starts with the first rising clock edge after the
last write data shown at T7.
Write (BC4) to Read (BC4) Operation
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
114
WRIT PRE
/CK
CK T0 T2 T4 T6 T8 T10T1 T3 T5 T7 T9 Tn Tn+1 Tn+2
Command*
3
DQ*
2
NOP
tWPRE
Bank
Col n
VIH or VIL
Address*
4
DQS, /DQS
Din
nDin
n+1 Din
n+2 Din
n+3
tWR*
5
tWPST
WL = 5
Notes: 1. BC4, WL = 5, RL = 5.
2. Din n = data-in from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [1, 0] during WRIT command at T0.
5. The write recovery time (tWR) referenced from the first rising clock edge after the last write data shown at T7.
tWR specifies the last burst write cycle until the precharge command can be issued to the same bank .
Write (BC4) to Precharge Operation
WRIT WRITNOP
/CK
CK T0 T2 T4 T6 T8 T10T1 T3 T5 T7 T9 T11 T12 T13
Command*
3
DQ*
2
NOP
tWPRE
Bank
Col n Bank
Col b
VIH or VIL
Address*
4
DQS, /DQS
Din
bDin
b+1
Din
n+6 Din
n+7 Din
b+2 Din
b+3 Din
b+4 Din
b+5 Din
b+6 Din
b+7
tCCD
tWPST
WL = 5 WL = 5
Notes: 1. BL8, WL = 5 (CWL = 5, AL = 0)
2. Din n (or b) = data-in from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0 and T4.
Din
n+2 Din
n+3
Din
nDin
n+1 Din
n+4 Din
n+5
tWR
tWTR
tBL = 4 clocks
Write (BL8) to Write (BL8) OTF
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
115
WRIT WRIT
/CK
CK T0 T2 T4 T6 T8 T10T1 T3 T5 T7 T9 T11 T12 T13
Command*3
DQ*2
NOPNOP
tWPRE
Bank
Col n Bank
Col b
VIH or VIL
Address*4
DQS, /DQS
Din
bDin
b+1 Din
b+2 Din
b+3
tCCD
tWPRE tWPST
tWPST
WL = 5 WL = 5
Notes: 1. BC4, WL = 5 (CWL = 5, AL = 0)
2. Din n (or b) = data-in from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by either MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T0 and T4.
Din
n+2 Din
n+3
Din
nDin
n+1
tWR
tWTR
tBL = 4 clocks
Write (BC4) to Write (BC4) OTF
WRIT READ
/CK
CK T0 T2 T4 T6 T8 T10T1 T3 T5 T7 T9 T11 T12 T13 T14
Command*
3
DQ*
2
NOP NOP
tWPRE
Bank
Col n Bank
Col b
VIH or VIL
Address*
4
DQS, /DQS
Din
n+6 Din
n+7
tWPST
WL = 5 RL = 5
Notes: 1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0)
2. Din n = data-in from column n; DOUT b = data-out from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0.
READ command at T13 can be either BC4 or BL8 depending on MR0 bit [A1, A0] and A12 status at T13.
Din
n+2 Din
n+3
Din
nDin
n+1 Din
n+4 Din
n+5
tWTR
Write (BL8) to Read (BC4/BL8) OTF
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
116
WRIT READ
/CK
CK T0 T2 T4 T6 T8 T10T1 T3 T5 T7 T9 T11 T12 T13 T14
Command*
3
DQ*
2
NOP NOP
tWPRE
Bank
Col n Bank
Col b
VIH or VIL
Address*
4
DQS, /DQS
tBL = 4 clocks
tWPST
WL = 5
Notes: 1. BC4, RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0)
2. Din n = data-in from column n; Dout b = data-out from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T0.
READ command at T13 can be either BC4 or BL8 depending on MR0 bit [A1, A0] and A12 status at T13.
Din
n+2 Din
n+3
Din
nDin
n+1
tWTR
RL = 5
Write (BC4) to Read (BC4/BL8) OTF
WRIT WRIT
/CK
CK T0 T2 T4 T6 T8 T10T1 T3 T5 T7 T9 T11 T12 T13 T14
Command*
3
DQ*
2
NOPNOP
tWPRE
Bank
Col n Bank
Col b
VIH or VIL
Address*
4
DQS, /DQS
Din
bDin
b+1
Din
n+6 Din
n+7 Din
b+2 Din
b+3
tCCD
tWPST
WL = 5
Notes: 1. WL = 5 (CWL = 5, AL = 0)
2. Din n (or b) = data-in from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0.
BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T4.
Din
n+2 Din
n+3
Din
nDin
n+1 Din
n+4 Din
n+5
tWR
tWTR
tBL = 4 clocks
WL = 5
Write (BL8) to Write (BC4) OTF
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
117
WRIT WRIT
/CK
CK T0 T2 T4 T6 T8 T10T1 T3 T5 T7 T9 T11 T12 T13 T14
Command*
3
DQ*
2
NOPNOP
tWPRE
Bank
Col n Bank
Col b
VIH or VIL
Address*
4
DQS, /DQS
Din
bDin
b+1 Din
b+2 Din
b+3 Din
b+4 Din
b+5 Din
b+6 Din
b+7
tCCD
tWPRE tWPST
tWPST
WL = 5
Notes: 1. WL = 5 (CWL = 5, AL = 0)
2. Din n (or b) = data-in from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T0.
BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T4.
Din
n+2 Din
n+3
Din
nDin
n+1
tWR
tWTR
tBL = 4 clocks
WL = 5
Write (BC4) to Write (BL8) OTF
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
118
Write Timing Violations
Motivation
Generally, if timing parameters are violated, a complete reset/initialization procedure has to be initiated to make sure
the DRAM works properly.
However it is desirable for certain minor violations, that the DRAM is guaranteed not to "hang up" and error to be
limited to that particular operation.
For the following it will be assumed that there are no timing violations w.r.t to the write command itself (including
ODT etc.) and that it does satisfy all timing requirements not mentioned below.
Data Setup and Hold Violations
Should the data to strobe timing requirements (tDS, tDH) be violated, for any of the strobe edges associated with a
write burst, then wrong data might be written to the memory location addressed with this write command.
In the example (Figure Write Timing Parameters) the relevant strobe edges for write burst A are associated with the
clock edges: T5, T5.5, T6, T6.5, T7, T7.5, T8, T8.5.
Subsequent reads from that location might result in unpredictable read data, however the DRAM will work properly
otherwise.
Strobe to Strobe and Strobe to Clock Violations
Should the strobe timing requirements (tDQSH, tDQSL, tWPRE, tWPST) or the strobe to clock timing requirements
(tDSS, tDSH tDQSS) be violated for any of the strobe edges associated with a write burst, then wrong data might be
written to the memory location addressed with the offending write command. Subsequent reads from that location
might result in unpredictable read data, however the DRAM will work properly otherwise.
In the example (Figure Write (BL8) to Write (BL8) OTF) the relevant strobe edges for write burst n are associated
with the clock edges: T4, T4.5, T5, T5.5, T6, T6.5, T7, T7.5, T8, T8.5 and T9. Any timing requirements starting and
ending on one of these strobe edges are T8, T8.5, T9, T9.5, T10, T10.5, T11, T11.5, T12, T12.5 and T13. Some
edges are associated with both bursts.
WRIT WRIT
NOP
/CK
CK T0 T4T3 T6 T8 T10 T12T5 T7 T9 T11 T13 T14
Command*3
DQS, /DQS
DQ*2
ODTL
WL
BL/2 + 2 + ODTL
tWPRE tWPST
VIH or VIL
tDQSL
tDQSH
tDSH
Address*4
/CS
NOP
tDSS
tDQSS
AB
tDH
tDS
Write Timing Parameters
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
119
Write Data Mask
One write data mask (DM) pin for each 8 data bits (DQ) will be supported on DDR3 SDRAMs, Consistent with the
implementation on DDR-I SDRAMs. It has identical timings on write operations as the data bits, and though used in
a uni-directional manner, is internally loaded identically to data bits to ensure matched system timing. DM is not
used during read cycles.
DQ
DQS
/DQS
T1 T2 T3 T4 T5 T6
DM
Write mask latency = 0
in in in in in in in in
Data Mask Timing
/CK
CK
DQS, /DQS
DQ
DM
DQS, /DQS
DQ
DM
Command
[tDQSS(min.)]
tWR
tDQSS
WL
tDQSS
WL
[tDQSS(max.)]
WRIT NOP
in0 in2 in3
in0 in2 in3
Data Mask Function, WL = 5, AL = 0 shown
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
120
Precharge
The precharge command is used to precharge or close a bank that has been activated. The precharge command is
triggered when /CS, /RAS and /WE are low and /CAS is high at the rising edge of the clock. The precharge
command can be used to precharge each bank independently or all banks simultaneously. Four address bits A10,
BA0, BA1 and BA2 are used to define which bank to precharge when the command is issued.
[Bank Selection for Precharge by Address Bits]
A10 BA0 BA1 BA2 Precharged Bank(s)
L L L L Bank 0 only
L H L L Bank 1 only
L L H L Bank 2 only
L H H L Bank 3 only
L L L H Bank 4 only
L H L H Bank 5 only
L L H H Bank 6 only
L H H H Bank 7 only
H × × × All banks 0 to 7
Remark: H: VIH, L: VIL, ×: VIH or VIL
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
121
Auto Precharge Operation
Before a new row in an active bank can be opened, the active bank must be precharged using either the precharge
command or the auto precharge function. When a read or a write command is given to the DDR3 SDRAM, the /CAS
timing accepts one extra address, column address A10, to allow the active bank to automatically begin precharge at
the earliest possible moment during the burst read or write cycle. If A10 is low when the read or write Command is
issued, then normal read or write burst operation is executed and the bank remains active at the completion of the
burst sequence. If A10 is high when the Read or Write Command is issued, then the auto precharge function is
engaged. During auto precharge, a read Command will execute as normal with the exception that the active bank
will begin to precharge on the rising edge which is /CAS latency (CL) clock cycles before the end of the read burst.
Auto precharge can also be implemented during Write commands. The precharge operation engaged by the Auto
precharge command will not begin until the last data of the burst write sequence is properly stored in the memory
array.
This feature allows the precharge operation to be partially or completely hidden during burst read cycles (dependent
upon /CAS latency) thus improving system performance for random data access. The /RAS lockout circuit internally
delays the Precharge operation until the array restore operation has been completed so that the auto precharge
command may be issued with any read or write command.
Burst Read with Auto Precharge
If A10 is high when a Read Command is issued, the Read with Auto precharge function is engaged. The DDR3
SDRAM starts an auto precharge operation on the rising edge which is (AL + tRTP) cycles later from the read with
AP command when tRAS (min.) is satisfied. If tRAS (min.) is not satisfied at the edge, the start point of auto
precharge operation will be delayed until tRAS (min.) is satisfied. A new bank active (command) may be issued to
the same bank if the following two conditions are satisfied simultaneously.
(1) The /RAS precharge time (tRP) has been satisfied from the clock at which the auto precharge begins.
(2) The /RAS cycle time (tRC) from the previous bank activation has been satisfied.
Burst Write with Auto precharge
If A10 is high when a write command is issued, the Write with auto precharge function is engaged. The DDR3
SDRAM automatically begins precharge operation after the completion of the burst writes plus write recovery time
(tWR). The bank-undergoing auto precharge from the completion of the write burst may be reactivated if the
following two conditions are satisfied.
(1) The data-in to bank activate delay time (tWR + tRP) has been satisfied.
(2) The /RAS cycle time (tRC) from the previous bank activation has been satisfied.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
122
Auto-Refresh
The refresh command (REF) is used during normal operation of the DDR3 SDRAMs. This command is non
persistent, so it must be issued each time a refresh is required. The DDR3 SDRAM requires refresh cycles at an
average periodic interval of tREFI. When /CS, /RAS and /CAS are held low and /WE high at the rising edge of the
clock, the chip enters a refresh cycle. All banks of the SDRAM must be precharged and idle for a minimum of the
precharge time tRP(min) before the refresh command can be applied. The refresh addressing is generated by the
internal refresh controller. This makes the address bits “Don’t Care” during a refresh command. An internal address
counter supplies the addresses during the refresh cycle. No control of the external address bus is required once this
cycle has started. When the refresh cycle has completed, all banks of the SDRAM will be in the precharged (idle)
state. A delay between the refresh command and the next valid command, except NOP or DESL, must be greater
than or equal to the minimum refresh cycle time tRFC(min) as shown in the following figure. Note that the tRFC
timing parameter depends on memory density.
In general, a refresh command needs to be issued to the DDR3 SDRAM regularly every tREFI interval. To allow for
improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is
provided. A maximum of 8 refresh commands can be postponed during operation of the DDR3 SDRAM, meaning
that at no point in time more than a total of 8 refresh commands are allowed to be postponed. In case that 8 refresh
commands are postponed in a row, the resulting maximum interval between the surrounding refresh commands is
limited to 9 × tREFI. A maximum of 8 additional refresh commands can be issued in advance (“pulled in”), with each
one reducing the number of regular refresh commands required later by one. Note that pulling in more than
8 refresh commands in advance does not further reduce the number of regular refresh commands required later, so
that the resulting maximum interval between two surrounding refresh commands is limited to 9 × tREFI. At any given
time, a maximum of 16 REF commands can be issued within 2 × tREFI. Self-refresh mode may be entered with a
maximum of eight refresh commands being postponed. After exiting self-refresh mode with one or more refresh
commands postponed, additional refresh commands may be postponed to the extent that the total number of
postponed refresh commands (before and after the self-refresh) will never exceed eight. During self-refresh mode,
the number of postponed or pulled-in REF commands does not change.
NOPPRE
CK
/CK T0 T1 T2 T3
CKE
Command
≥ tRP
VIH
≥ tRFC ≥ tRFC
REF
REF NOP Any
Command
Refresh Command Timing
tREFI
tRFC t
9 × tREFI
8 × REF-Commands postponed
Postponing Refresh Command
tREFI
tRFC t
9 × tREFI
8 × REF-Commands pulled-in
Pulling-in Refresh Command
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
123
Self-Refresh
The self-refresh command can be used to retain data in the DDR3 SDRAM, even if the rest of the system is powered
down. When in the self-refresh mode, the DDR3 SDRAM retains data without external clocking. The DDR3 SDRAM
device has a built-in timer to accommodate self-refresh operation. The self-refresh entry (SELF) command is
defined by having /CS, /RAS, /CAS and CKE held low with /WE high at the rising edge of the clock.
Before issuing the self-refresh entry command, the DDR3 SDRAM must be idle with all bank precharge state with
tRP satisfied. ‘Idle state’ is defined as all banks are closed (tRP, tDAL, etc. satisfied), no data bursts are in progress,
CKE is high, and all timings from previous operations are satisfied (tMRD, tMOD, tRFC, tZQinit, tZQoper, tZQCS,
etc.) Also, on-die termination must be turned off before issuing self-refresh entry command, by either registering
ODT pin low “ODTL + 0.5tCK” prior to the self-refresh entry command or using MRS to MR1 command. Once the
self-refresh entry command is registered, CKE must be held low to keep the device in self-refresh mode. During
normal operation (DLL on), MR1 (A0 = 0), the DLL is automatically disabled upon entering self-refresh and is
automatically enabled (including a DLL-Reset) upon exiting self-refresh.
When the DDR3 SDRAM has entered self-refresh mode all of the external control signals, except CKE and /RESET,
are “don’t care”. For proper self-refresh operation, all power supply and reference pins (VDD, VDDQ, VSS, VSSQ,
VREFCA and VREFDQ) must be at valid levels. VREFDQ supply may be turned OFF and VREFDQ may take any
value between VSS and VDD during self-refresh operation, provided that VREFDQ is valid and stable prior to CKE
going back high and that first write operation or first write leveling activity may not occur earlier than 512 nCK after
exit from self-refresh. The DRAM initiates a minimum of one refresh command internally within tCKESR period once
it enters self-refresh mode.
The clock is internally disabled during self-refresh operation to save power. The minimum time that the DDR3
SDRAM must remain in self-refresh mode is tCKESR. The user may change the external clock frequency or halt the
external clock tCKSRE cycles after self-refresh entry is registered, however, the clock must be restarted and stable
tCKSRX clock cycles before the device can exit self-refresh operation. To protect DRAM internal delay on CKE line
to block the input signals, one NOP (or DESL) command is needed after self-refresh entry.
The procedure for exiting self-refresh requires a sequence of events. First, the clock must be stable prior to CKE
going back high. Once a self-refresh exit command (SREX, combination of CKE going high and either NOP or
DESL on command bus) is registered, a delay of at least tXS must be satisfied before a valid command not requiring
a locked DLL can be issued to the device to allow for any internal refresh in progress.
Before a command that requires a locked DLL can be applied, a delay of at least tXSDLL must be satisfied.
Depending on the system environment and the amount of time spent in self-refresh, ZQ calibration commands may
be required to compensate for the voltage and temperature drift as described in ZQ Calibration section. To issue ZQ
calibration commands, applicable timing requirements must be satisfied (See Figure ZQ Calibration).
CKE must remain high for the entire self-refresh exit period tXSDLL for proper operation except for self-refresh
re-entry. Upon exit from self-refresh, the DDR3 SDRAM can be put back into self-refresh mode after waiting at least
tXS period and issuing one refresh command (refresh period of tRFC). NOP or DESL commands must be registered
on each positive clock edge during the self-refresh exit interval tXS. ODT must be turned off during tXSDLL.
The use of self-refresh mode introduces the possibility that an internally timed refresh event can be missed when
CKE is raised for exit from self-refresh mode. Upon exit from self-refresh, the DDR3 SDRAM requires a minimum of
one extra refresh command before it is put back into self-refresh mode.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
124
tCKSRE
tCKESR
tXS
ODTLoff + 0.5 x tCK
tRP
*2*2*3*3
Notes: 1. Only NOP or DESL commands.
2. Valid commands not requiring a locked DLL.
3. Valid commands requiring a locked DLL.
4. One NOP or DESL commands.
CK, /CK
ODT
Command SELF NOP
PALL SREX
Valid
*1
*4
Ta Tb Tc Tc+1Tc+2 TeTd Tf Tf+1 Tf+2 Tg+1Tg Th+1Th
CKE
tCKSRX tXSDLL
Valid Valid Valid
Self-Refresh Entry and Exit Timing
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
125
Power-Down Mode
Power-down is synchronously entered when CKE is registered low (along with NOP or DESL command). CKE is not
allowed to go low while mode register set command, MPR operations, ZQCAL operations, DLL locking or read/write
operation are in progress. CKE is allowed to go low while any of other operations such as row activation, precharge
or auto precharge and refresh are in progress, but power-down IDD spec will not be applied until finishing those
operations.
The DLL should be in a locked state when power-down is entered for fastest power-down exit timing. If the DLL is
not locked during power-down entry, the DLL must be reset after exiting power-down mode for proper read operation
and synchronous ODT operation. DRAM design provides all AC and DC timing and voltage specification as well
proper DLL operation with any CKE intensive operations as long as DRAM controller complies with DRAM
specifications.
During power-down, if all banks are closed after any in-progress commands are completed, the device will be in
precharge power-down mode; if any bank is open after in-progress commands are completed, the device will be in
active power-down mode.
Entering power-down deactivates the input and output buffers, excluding CK, /CK, ODT, CKE and /RESET. To
protect DRAM internal delay on CKE line to block the input signals, multiple NOP or DESL commands are needed
during the CKE switch off and cycle(s) after this timing period are defined as tCPDED. CKE_low will result in
deactivation of command and address receivers after tCPDED has expired.
[Power-Down Entry Definitions]
Status of DRAM MR0 bit A12 DLL PD Exit Relevant Parameters
Active
(A bank or more open) Don’t Care On Fast tXP to any valid command
Precharged
(All banks precharged) 0 Off Slow
tXP to any valid command. Since it is in
precharge state, commands here will be ACT,
AR, MRS, PRE or PALL .
tXPDLL to commands who need DLL to operate,
such as READ, READA or ODT control line.
Precharged
(All banks precharged) 1 On Fast tXP to any valid command
Also the DLL is disabled upon entering precharge power-down for slow exit mode, but the DLL is kept enabled
during precharge power-down for fast exit mode or active power-down. In power-down mode, CKE low, RESET high
and a stable clock signal must be maintained at the inputs of the DDR3 SDRAM, and ODT should be in a valid state
but all other input signals are “Don’t Care” (If RESET goes low during power-down, the DRAM will be out of PD
mode and into reset state). CKE low must be maintained until tPD has been satisfied. Power-down duration is
limited by 9 times tREFI of the device.
The power-down state is synchronously exited when CKE is registered high (along with a NOP or DESL command).
CKE high must be maintained until tCKE has been satisfied. A valid, executable command can be applied with
power-down exit latency, tXP and/or tXPDLL after CKE goes high. Power-down exit latency is defined at AC
Characteristics table of this data sheet.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
126
Timing Diagrams for Proposed CKE with Power-Down Entry, Power-Down Exit
CK
Command
CKE
DQ(BL8)
/CK T5 T7 T8 T9 T10 T11T0 T1 T6 T12 Tx Tx+1
out
0out
1out
2out
3
VIH
READ
BA
Valid
NOP
DQ(BC4)
out
0out
1out
2out
3
out
4out
5out
6out
7
tRDPDEN tCPDED
tPD
tIS
RL = CL + AL = 5 (AL = 0)
NOP
Power-Down Entry after Read an d Read with Auto Precharge
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Tn
CK
BA
Command
CKE
/CK
T10 T14 T15 T16 T17 T18
WRITA
Valid
NOP NOP NOP
tCPDED
tPD
tWR*
Note: tWR is programmed through MRS.
WL=5
tWRAPDEN
tIS
Start Internal
Precharge
in
0in
1in
2in
3
in
0in
1in
2in
3in
4in
5in
6in
7
DQ(BC4)
DQ(BL8)
Power-Down Entry Af ter Write with Auto Precharge
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
127
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
CK
BA
Command
CKE
/CK
T10 Tx Tx+1 Tx+2 Tx+3
WRITE
Valid
NOP NOP
tCPDED
tPD
tWR
WL=5
tWRPDEN
tIS
in
0in
1in
2in
3
in
0in
1in
2in
3in
4in
5in
6in
7
DQ(BL8)
DQ(BC4)
Power-Down Entry after Write
T0 T1 Tn Tn+1 Tx Ty
tXP
tCPDED tCKE (min.)
tPD
CK
Command
CKE
/CK
Enter power-down mode
Note: Valid command at T0 is ACT, NOP, DESL or precharge with still one bank remaining open after completion of
precharge command.
Exit power-down
tIH tIH
tIS tIS
Valid NOP NOP NOP NOP NOP NOP NOP Valid NOP NOP NOP NOP N
Active Power-Down Entry and Exit Timing Diagram
T0 T1 Tn Tn+1 Tx Ty
tXP
tCPDED tCKE (min.)
tPD
CK
Command
CKE
/CK
Enter power-down mode Exit power-down
tIH tIH
tIS tIS
NOP NOP NOP NOP NOP NOP NOP Valid NOP NOP NOP NOP N
Valid
Precharge Power-Down (Fast Exit Mode) Entry and Exit
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
128
T0 T1 Tn Tx Ty
CK
Command
CKE
/CK
Tn+1
Enter power-down mode Exit power-down
NOP NOP NOP NOP NOP NOP NOP NOP Valid NOP Valid NOP NO
tXP
tXPDLL
tCPDED tCKE (min.)
tPD
tIH tIH
tIS tIS
Valid
Precharge Power-Down (Slow Exit Mode) Entry and Exit
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11
CK
Command
CKE
/CK
NOPNOP
Valid
tCPDED
tREFPDEN
tIS
Refresh Command to Power-Down Entry
T0 T1 T2 T3 T4 Tn End
CK
Command
CKE
/CK
Tn+1 Tn+2
NOPNOP
Valid
tCPDED
tACTPDEN
tPD
tIS
Active Command to Power-Down Entry
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
129
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 End
CK
Command
CKE
/CK
NOP
NOP
Valid
tCPDED
tPREPDEN
tIS
Precharge/Precharge All Command to Power-Down Entry
T0 T1 T2 T3 Tn Tn+1 Tn+2 Tn+3 Tn+4 Tn+5 Tn+6 Tn+7
CK
Command
CKE
/CK
MRS NOP NOP NOP NOP NOP
tMRSPDEN
tCPDED
tIS
MRS Command to Power-Down Entry
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
130
Timing Values tXXXPDEN Parameters
Status of DRAM Last Command before CKE_low Parameter Parameter Value Unit
Idle or Active Activate tACTPDEN 1 nCK
Idle or Active Precharge tPRPDEN 1 nCK
Active READ/READA tRDPDEN RL + 4 + 1 nCK
Active WRIT for BL8MRS, BL8OTF, BC4OTF tWRPDEN WL + 4 + (tWR/tCK (avg)) *1 nCK
Active WRIT for BC4MRS tWRPDEN WL + 2 + (tWR/tCK (avg))*1 nCK
Active WRITA for BL8MRS, BL8OTF, BC4OTF tWRAPDEN WL + 4 + WR*2 + 1 nCK
Active WRITA for BC4MRS tWRAPDEN WL + 2 + WR*2 + 1 nCK
Idle Refresh tREFPDEN 1 nCK
Idle Mode Register Set tMRSPDEN tMOD
Notes: 1. tWR is defined in ns, for calculation of tWRPDEN, it is necessary to round up tWR / tCK to next integer.
2. WR in clock cycles as programmed in mode register.
Power-Down Entry and Exit Clarification
Case 1:
When CKE registered low for power-down entry, tPD must be satisfied before CKE can be registered high for power-
down exit.
Case 1a:
After power-down exit, tCKE must be satisfied before CKE can be registered low again.
T0 T1 Tn Tn+1 Tx Ty
tCPDED
tCKE
tPD
CK
Command
CKE
/CK
Enter power-down Exit power-down
tIH tIH
tIS tIS
Valid NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP N
Power-Down Entry/Exit Clarifications (1)
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
131
Case 2:
For certain CKE intensive operations, for example, repeated "PD Exit - Refresh - PD Entry" sequence, the number of
clock cycles between PD Exit and PD Entry may be insufficient to keep the DLL updated. Therefore the following
conditions must be met in addition to tPD in order to maintain proper DRAM operation when Refresh commands is
issued in between PD Exit and PD Entry.
Power-down mode can be used in conjunction with Refresh command if the following conditions are met:
1. tXP must be satisfied before issuing the command
2. tXPDLL must be satisfied (referenced to registration of PD exit) before next power-down can be entered.
T0 T1 Tn Tn+1 Tx Ty
tCPDED
tCKE (min.)
tXPDLL (min.)
tPD
CK
Command
CKE
/CK
Enter power-down Exit power-down
tIH tIH
tIS tIS
tXP
Valid NOP NOP NOP NOP NOP NOP NOP NOP NOP NOPREFNOP
Power-Down Entry/Exit Clarifications (2)
Case 3:
If an early PD Entry is issued after Refresh command, once PD Exit is issued, NOP or DESL with CKE high must be
issued until tRFC from the refresh command is satisfied. This means CKE cannot be de-asserted twice within tRFC
window.
T0 T1 Tn Tn+1 Tx Ty
tCPDED tCKE (min.)
tRFC (min.)
tPD tXPDLL
CK
Command
CKE
/CK
Enter power-down
Note: * Synchronous ODT Timing starts at the end of tXPDLL (min.)
Exit power-down
tIH tIH
tIS tIS
REF NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP N
NOP
Power-Down Entry/Exit Clarifications (3)
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
132
Input Clock Frequency Change during Precharge Pow er-Down
Once the DDR3 SDRAM is initialized, the DDR3 SDRAM requires the clock to be “stable” during almost all states of
normal operation. This means once the clock frequency has been set and is to be in the “stable state”, the clock
period is not allowed to deviate except for what is allowed for by the clock jitter and SSC (Spread Spectrum
Clocking) specifications.
The input clock frequency can be changed from one stable clock rate to another stable clock rate under two
conditions: (1) self-refresh mode and (2) precharge power-down mode. Outside of these two modes, it is illegal to
change the clock frequency. For the first condition, once the DDR3 SDRAM has been successfully placed in to Self-
Refresh mode and tCKSRE has been satisfied, the state of the clock becomes a don’t care. Once a don’t care,
changing the clock frequency is permissible, provided the new clock frequency is stable prior to tCKSRX. When
entering and exiting Self-Refresh mode for the sole purpose of changing the clock frequency, the self-refresh entry
and exit specifications must still be met as outlined in Self-Refresh section.
The second condition is when the DDR3 SDRAM is in Precharge Power-down mode (either fast exit mode or slow
exit mode.) ODT must be at a logic low ensuring RTT is in an off state prior to entering Precharge Power-down mode
and CKE must be at a logic low. A minimum of tCKSRE must occur after CKE goes low before the clock frequency
may change. The DDR3 SDRAM input clock frequency is allowed to change only within the minimum and maximum
operating frequency specified for the particular speed grade. During the input clock frequency change, ODT and
CKE must be held at stable low levels. Once the input clock frequency is changed, stable new clocks must be
provided to the DRAM tCKSRX before Precharge Power-down may be exited; after Precharge Power-down is exited
and tXP has expired, the DLL must be RESET via MRS. Depending on the new clock frequency additional MRS
commands may need to be issued to appropriately set the WR, CL, and CWL with CKE continuously registered high.
During DLL relock period, ODT must remain low. After the DLL lock time, the DRAM is ready to operate with new
clock frequency. This process is depicted in the figure Clock Frequency Change in Precharge Power-Down Mode.
CK
CKE
T2 Tb Tc Tc+1 TdT0 T1 Ta
/CK Td+1
Enter precharge
power-down mode
ODT
Command
Te Te+1
DQS, /DQS
NOP NOP NOPNOP NOPMRS Valid
Exit precharge
power-down mode
tXP
High-Z
High-Z
Frequency
change
NOP
Address Valid
tIH tIS tCKSRE
New clock frequencyPrevious clock frequency
tCPDED
tCKSRX
DLL
RESET
tAOFPD/tAOF
DQ
DM
tDLLK
Notes: 1. Applicable for both slow exit and fast exit precharge power-down.
2. tCKSRE and tCKSRX are self-refresh mode specifications but the values
they represent are applicable here.
3. tAOFPD and tAOF must be satisfied and outputs high-z prior to T1;
refer to ODT timing for exact requirements.
Clock Frequency Change in Precharge Power-Down Mode
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
133
On-Die Termination (ODT)
ODT (On-Die Termination) is a feature of the DDR3 SDRAM that allows the DRAM to turn on/off termination
resistance for each DQ, DQS, /DQS and DM for ×4 and ×8 configuration (and TDQS, /TDQS for ×8 configuration,
when enabled via A11=1 in MR1) via the ODT control pin. The ODT feature is designed to improve signal integrity of
the memory channel by allowing the DRAM controller to independently turn on/off termination resistance for any or
all DRAM devices.
The ODT feature is turned off and not supported in Self-Refresh mode.
A simple functional representation of the DRAM ODT feature is shown in figure Functional Representation of ODT.
To other
circuitry
like
RCV, ...
ODT VDDQ/2
RTT
Switch
DQ, DQS, DM, TDQS
Functional Representation of ODT
The switch is enabled by the internal ODT control logic, which uses the external ODT pin and other control
information, see below. The value of RTT is determined by the settings of mode register bits (see MR1
programming figure in the section Programming the Mode Register). The ODT pin will be ignored if the Mode
Register MR1 is programmed to disable ODT and in self-refresh mode.
ODT Mode Register and ODT Truth Table
The ODT Mode is enabled if either of MR1 bits A2 or A6 or A9 are non-zero. In this case the value of RTT is
determined by the settings of those bits.
Application: Controller sends WRIT command together with ODT asserted.
• One possible application: The rank that is being written to provide termination.
• DRAM turns ON termination if it sees ODT asserted (except ODT is disabled by MR)
• DRAM does not use any write or read command decode information
• The Termination Truth Table is shown in the Termination Truth Table
[Termination Truth Table]
ODT pin DRAM Termination State
0 OFF
1 ON, (OFF, if disabled by MR1 bits A2, A6 and A9 in general)
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
134
Synchronous ODT Mode
Synchronous ODT mode is selected whenever the DLL is turned on and locked. Based on the power-down
definition, these modes are:
• Active mode
• Idle mode with CKE high
• Active power-down mode (regardless of MR0 bit A12)
• Precharge power-down mode if DLL is enabled during precharge power-down by MR0 bit A12.
In synchronous ODT mode, RTT will be turned on or off ODTLon clock cycles after ODT is sampled high by a rising
clock edge and turned off ODTLoff clock cycles after ODT is registered low by a rising clock edge. The ODT latency
is tied to the write latency (WL) by: ODTLon = WL – 2; ODTLoff = WL – 2.
ODT Latency and Posted ODT
In Synchronous ODT mode, the Additive Latency (AL) programmed into the Mode Register (MR1) also applies to the
ODT signal. The DRAM internal ODT signal is delayed for a number of clock cycles defined by the Additive Latency
(AL) relative to the external ODT signal.
ODTLon = CWL + AL − 2; ODTLoff = CWL + AL − 2. For details, refer to DDR3 SDRAM latency definitions.
[ODT Latency Table]
Parameter Symbol Value Unit
ODT turn-on Latency ODTLon WL – 2 = CWL + AL – 2 nCK
ODT turn-off Latency ODTLoff WL – 2 = CWL + AL – 2 nCK
Synchronous ODT Timing Parameters
In synchronous ODT mode, the following timing parameters apply (see Synchronous ODT Timing Examples (1)):
ODTLLow, ODTLLoff, tAON,(min.), (max.), tAOF,(min.),(max.) Minimum RTT turn-on time (tAON min) is the point in
time when the device leaves high impedance and ODT resistance begins to turn on. Maximum RTT turn-on time
(tAON max) is the point in time when the ODT resistance is fully on. Both are measured from ODTLon.
Minimum RTT turn-off time (tAOF min ) is the point in time when the device starts to turn-off the ODT resistance.
Maximum RTT turn-off time (tAOF max) is the point in time when the on-die termination has reached high
impedance. Both are measured from ODTLoff.
When ODT is asserted, it must remain high until ODTH4 is satisfied. If a Write command is registered by the
SDRAM with ODT high, then ODT must remain high until ODTH4 (BL4) or ODTH8 (BL8) after the Write command
(see figure Synchronous ODT Timing Examples (2)). ODTH4 and ODTH8 are measured from ODT registered high
to ODT registered low or from the registration of a Write command until ODT is registered low.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
135
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 END
CK
CKE
IntODT
ODT
RTT
/CK
ODTH4 (min.)
AL = 3 AL = 3
ODTLon = CWL + AL – 2 ODTLoff = CWL + AL – 2
CWL – 2
RTT
tAOF (max.)
tAOF (min.)
tAON (max.)
tAON (min.)
Synchronous ODT Timing Examples (1): AL=3, CWL = 5;
ODTLon = AL + CWL - 2 = 6; ODTLoff = AL + CWL - 2 = 6
CK
CKE
Command
ODT
DRAM_RTT
/CK
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18
ODTH4 ODTH4
ODTH4
ODTLon = WL – 2
ODTLon = WL – 2
ODTLoff = WL – 2 ODTLoff = WL – 2
WRS4
RTT RTT
tAON (max.)
tAON (min.) tAOF (max.)
tAOF (min.) tAOF (max.)
tAOF (min.)
tAON (min.)
tAON (max.)
Synchronous ODT Timing Examples (2)*: BC4, WL = 7
ODT must be held high for at least ODTH4 after assertion (T1); ODT must be kept high ODTH4 (BC4) or ODTH8
(BL8) after write command (T7). ODTH is measured from ODT first registered high to ODT first registered low, or
from registration of write command with ODT high to ODT registered low. Note that although ODTH4 is satisfied
from ODT registered high at T6 ODT must not go low before T11 as ODTH4 must also be satisfied from the
registration of the write command at T7.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
136
ODT during Reads
As the DDR3 SDRAM cannot terminate and drive at the same time, RTT must be disabled at least half a clock cycle
before the read preamble by driving the ODT pin low appropriately. RTT may nominally not be enabled until one
clock cycle after the end of the post-amble as shown in the example in the figure below.
Note that ODT may be disabled earlier before the Read and enabled later after the Read than shown in this example
in the figure below.
ODT must be disabled externally during Reads by driving ODT low.
(example: CL = 6; AL = CL - 1 = 5; RL = AL + CL = 11; CWL = 5; ODTLon = CWL + AL -2 = 8;
ODTLoff = CWL + AL - 2 = 8)
DRAM_RTT
CK
Command
Address
ODT
DQS, /DQS
DQ
/CK
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 End
RL = AL + CL
ODTLoff = WL – 2 = CWL + AL – 2
ODTLon = WL – 2 = CWL + AL – 2
READ
A
out
0
RTT
RTT
out
1out
2out
3out
4out
5out
6out
7
tAON (min.)
tAON (max.)
tAOF (max.)
tAOF (min.)
Example of ODT during Reads
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
137
Dynamic ODT
In certain application cases and to further enhance signal integrity on the data bus, it is desirable that the termination
strength of the DDR3 SDRAM can be changed without issuing an MRS command. This requirement is supported by
the “Dynamic ODT” feature as described as follows:
Functional Description:
The Dynamic ODT mode is enabled if bit A9 or A10 of MR2 is set to ’1’. The function and is described as follows:
• Two RTT values are available: RTT_Nom and RTT_WR.
The value for RTT_Nom is pre-selected via bits A[9,6,2] in MR1
The value for RTT_WR is pre-selected via bits A[10,9] in MR2
• During operation without write commands, the termination is controlled as follows:
Nominal termination strength RTT_Nom is selected.
Termination on/off timing is controlled via ODT pin and latencies ODTLon and ODTLoff.
• When a write command (WRIT, WRITA, WRS4, WRS8, WRAS4, WRAS8) is registered, and if Dynamic ODT is
enabled, the termination is controlled as follows:
A latency ODTLcnw after the write command, termination strength RTT_WR is selected.
A latency ODTLcwn8 (for BL8, fixed by MRS or selected OTF) or ODTLcwn4 (for BC4, fixed by MRS or selected
OTF) after the write command, termination strength RTT_Nom is selected.
Termination on/off timing is controlled via ODT pin and ODTLon, ODTLoff.
Table Latencies and Timing Parameters Relevant for Dynamic ODT shows latencies and timing parameters, which
are relevant for the on-die termination control in Dynamic ODT mode:
When ODT is asserted, it must remain high until ODTH4 is satisfied. If a write command is registered by the SDRAM
with ODT high, then ODT must remain high until ODTH4 (BC4) or ODTH8 (BL8) after the write command (see the
figure Synchronous ODT Timing Examples (2)). ODTH4 and ODTH8 are measured from ODT registered high to
ODT registered low or from the registration of a write command until ODT is registered low.
[Latencies and Timing Parameters Relevant for Dynamic ODT]
Parameters
Symbols
Defined from
Defined to
Definition for all DDR3
speed bins
Unit
ODT turn-on Latency ODTLon Registering external
ODT signal high Turning termination on ODTLon = WL – 2 nCK
ODT turn-off Latency ODTLoff Registering external
ODT signal low Turning termination off ODTLoff = WL – 2 nCK
ODT latency for changing
from RTT_Nom to RTT_WR ODTLcnw Registering external
write command
Change RTT strength from
RTT_Nom to RTT_WR ODTLcnw = WL – 2 nCK
ODT latency for change
from RTT_WR to RTT_Nom
(BC4)
ODTLcwn4 Registering external
write command
Change RTT strength from
RTT_WR to RTT_Nom
ODTLcwn4 =
4 + ODTLoff nCK
ODT latency for change
from RTT_WR to RTT_Nom
(BL8)
ODTLcwn8 Registering external
write command
Change RTT strength from
RTT_WR to RTT_Nom
ODTLcwn8 =
6 + ODTLoff nCK
Minimum ODT high time after
ODT assertion ODTH4 registering ODT high ODT registered low ODTH4 (min.) = 4 nCK
Minimum ODT high time after
Write (BC4) ODTH4 registering Write with
ODT high ODT registered low ODTH4 (min.) = 4 nCK
Minimum ODT high time after
Write (BL8) ODTH8 registering Write with
ODT high ODT registered low ODTH8 (min.) = 6 nCK
RTT change skew tADC ODTLcnw
ODTLcwn RTT valid 0.3 to 0.7 tCK (avg)
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
138
Mode Register Settings for Dynamic ODT Mode:
The table Mode Register for RTT Selection shows the mode register bits to select RTT_Nom and RTT_WR values.
[Mode Register for RTT Selection]
MR1 MR2
A9
A6
A2
RTT_Nom
(RZQ)
RTT_Nom
(Ω)
A10
A9
RTT_WR
(RZQ)
RTT_WR*1
(Ω)
0 0 0 off off 0 0 Dynamic ODT OFF: Write does not
affect RTT value
0 0 1 RZQ/4 60 0 1 RZQ/4 60
0 1 0 RZQ/2 120 1 0 RZQ/2 120
0 1 1 RZQ/6 40 1 1 Reserved Reserved
1 0 0 RZQ/12*2 20
1 0 1 RZQ/8*2 30
1 1 0 Reserved Reserved
1 1 1 Reserved Reserved
Notes: 1. RZQ = 240Ω.
2. If RTT_Nom is used during WRITEs, only the values RZQ/2, RZQ/4 and RZQ/6 are allowed.
ODT Timing Diagrams
CK
Command
ODT
RTT
DQS, /DQS
DQ
/CK
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19
in
0
WRS4
ODTLcnw
ODTLcwn4
ODTLon ODTLoff
ODTH4
ODTH4
WL
RTT_Nom RTT_Nom
RTT_WR
tAON (min.) tADC (min.) tADC (min.) tAOF (min.)
tADC (max.)
tADC (max.)
tAON (max.) tAOF (max.)
in
1in
2in
3
Dynamic ODT: Behavior with ODT Being Asserted Before and after the Write*
Note: Example for BC4 (via MRS or OTF), AL = 0, CWL = 5. ODTH4 applies to first registering ODT high and to the
registration of the write command. In this example ODTH4 would be satisfied if ODT is low at T8 (4 clocks
after the write command).
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
139
CK
Command
ODT
RTT
DQS, /DQS
DQ
/CK
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11
ODTH4
RTT_Nom
tAON (min.)
tAON (max.)
tAOF (min.)
tAOF (max.)
ODTLon ODTLoff
Dynamic ODT*: Behavior without Write Command; AL = 0, CWL = 5
Note: ODTH4 is defined from ODT registered high to ODT registered low, so in this example ODTH4 is satisfied;
ODT registered low at T5 would also be legal.
CK
Command
ODT
RTT
DQS, /DQS
DQ
/CK
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11
RTT_WR
tAON (min.)
tADC (max.)
tAOF (min.)
tAOF (max.)
ODTLcnw
ODTLcwn8
ODTLon ODTLoff
WRS8
in
0
WL
ODTH8
in
1in
2in
3in
4in
5in
6in
7
Dynamic ODT*: Behavior with ODT Pin Being Asserted Together with Write Command
for Duration of 6 Clock Cycl es
Note: Example for BL8 (via MRS or OTF), AL = 0, CWL = 5. In this example ODTH8 = 6 is exactly satisfied.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
140
CK
Command
ODT
RTT
DQS, /DQS
DQ
/CK
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11
RTT_WR RTT_Nom
tAON (min.)
tADC (max.)
tAOF (min.)
tAOF (max.)
tADC (min.)
tADC (max.)
ODTLcnw
ODTLcwn4
ODTLon ODTLoff
WRS4
in
0
WL
ODTH4
in
1in
2in
3
Dynamic ODT*: Behavior with ODT Pin Being Asserted Together with Write Command
for a Duration of 6 Clock Cycles, Example for BC4 (via MRS or OTF), AL = 0, CWL = 5.
Note: ODTH4 is defined from ODT registered high to ODT registered low, so in this example ODTH4 is satisfied;
ODT registered low at T5 would also be legal.
CK
Command
ODT
RTT
DQS, /DQS
DQ
/CK
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
ODTLcnw
ODTLcwn4
ODTLon ODTLoff
WRS4
in
0
WL
tADC (max.) tAOF (max.)
RTT_WR
tAON (min.) tAOF (min.)
ODTH4
in
1in
2in
3
Dynamic ODT*: Behavior with ODT Pin Being Asserted Together with Write Command
for Duration of 4 Clock Cycl es
Note: Example for BC4 (via MRS or OTF), AL = 0, CWL = 5. In this example ODTH4 = 4 is exactly satisfied.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
141
Asynchronous ODT Mode
Asynchronous ODT mode is selected when DRAM runs in DLL-on mode, but DLL is temporarily disabled (i.e. frozen)
in precharge power-down (by MR0 bit A12).
Precharge power-down mode if DLL is disabled during precharge power-down by MR0 bit A12.
In asynchronous ODT timing mode, internal ODT command is not delayed by Additive Latency (AL) relative to the
external ODT command.
In asynchronous ODT mode, the following timing parameters apply (see figure Asynchronous ODT Timings):
tAONPD (min.), (max.), tAOFPD (min.),(max.)
Minimum RTT turn-on time (tAONPD (min.)) is the point in time when the device termination circuit leaves high
impedance state and ODT resistance begins to turn on. Maximum RTT turn-on time (tAONPD (max.)) is the point in
time when the ODT resistance is fully on. tAONPD (min.) and tAONPD (max.) are measured from ODT being
sampled high.
Minimum RTT turn-off time (tAOFPD (min.)) is the point in time when the devices termination circuit starts to turn off
the ODT resistance. Maximum ODT turn-off time (tAOFPD (max.)) is the point in time when the on-die termination
has reached high impedance. tAOFPD (min.) and tAOFPD (max.) are measured from ODT being sampled low.
CK
ODT
CKE
DRAM_RTT
/CK
RTT
tIH
tIS
tIH
tIS
tAONPD (max.)
tAONPD (min.) tAOFPD (max.)
tAOFPD (min.)
Asynchronous ODT Timings on DDR3 SDRAM with Fast ODT Transition: AL is Ignored
In precharge power-down, ODT receiver remains active, however no read or write command can be issued, as the
respective address/command receivers may be disabled.
[Asynchronous ODT Timing Parameters for All Speed Bins]
Symbol Parameters min. max. Unit
tAONPD Asynchronous RTT turn-on delay (power-down with DLL frozen) 2 8.5 ns
tAOFPD Asynchronous RTT turn-off delay (power-down with DLL frozen) 2 8.5 ns
[ODT for Power-Down (with DLL Frozen) Entry and Exit Transition Period]
Description min. max.
ODT to RTT turn-on delay
min {ODTLon × tCK + tAON(min.);
tAONPD(min.) }
max {ODTLon × tCK + tAON(max.);
tAONPD(max.) }
min { (WL − 2) × tCK + tAON(min.);
tAONPD(min.) }
max {(WL − 2) × tCK + tAON(max.);
tAONPD(max.) }
ODT to RTT turn-off delay min { ODTLoff × tCK +tAOF(min.);
tAOFPD(min.) }
max { ODTLoff × tCK + tAOF(max.);
tAOFPD(max.) }
min { (WL − 2) × tCK +tAOF(min.);
tAOFPD(min.) }
max {(WL − 2) × tCK + tAOF(max.);
tAOFPD(max.) }
tANPD WL − 1
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
142
Synchronous to Asynchronous ODT Mode Transition during Power-Down Entry
If DLL is selected to be frozen in precharge power-down mode by the setting of bit A12 in MR0 to 0 there is a
transition period around power-down entry, where the DDR3 SDRAM may show either synchronous or
asynchronous ODT behavior.
This transition period ends when CKE is first registered low and starts tANPD before that. If there is a Refresh
command in progress while CKE goes low, then the transition period ends tRFC after the refresh command. tANPD
is equal to (WL − 1) and is counted (backwards) from the clock cycle where CKE is first registered low.
ODT assertion during the transition period may result in an RTT change as early as the smaller of tAONPD(min.)
and (ODTLon × tCK + tAON(min.)) and as late as the larger of tAONPD(max.) and (ODTLon × tCK + tAON(max.)).
ODT de-assertion during the transition period may result in an RTT change as early as the smaller of tAOFPD(min.)
and (ODTLoff × tCK + tAOF(min.)) and as late as the larger of tAOFPD(max.) and (ODTLoff × tCK + tAOF(max.)).
Note that, if AL has a large value, the range where RTT is uncertain becomes quite large.
The figure below shows the three different cases: ODT_A, synchronous behavior before tANPD; ODT_B has a state
change during the transition period; ODT_C shows a state change after the transition period.
CK
ODT
Command
CKE
DRAM_RTT_A_sync
ODT_A_sync
ODT_B_tran
DRAM_RTT_B_tran
DRAM_RTT_C_async
ODT_C_async
/CK
tAOF (min.)
tAOF (max.)
PD entry transition period
tANPD
tRFC
ODTLoff
REF NOP NOP
RTT
RTT
ODTLoff + tAOFPD (min.)
tAOFPD (max.)
tAOFPD (max.)
tAOFPD (min.)
tAOFPD (min.)
ODTLoff + tAOFPD (max.)
Synchronous to Asynchronous Transition During Precharge Power-Down (with DLL Frozen) Entry
(AL = 0; CWL = 5; tANPD = WL − 1 = 4)
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
143
Asynchronous to Synchronous ODT Mode Transition during Power-Down Exit
If DLL is selected to be frozen in precharge power-down mode by the setting of bit A12 in MR0 to 0, there is also a
transition period around power-down exit, where either synchronous or asynchronous response to a change in ODT
must be expected from the DDR3 SDRAM.
This transition period starts tANPD before CKE is first registered high, and ends tXPDLL after CKE is first registered
high. tANPD is equal to (WL − 1) and is counted backward from the clock cycle where CKE is first registered high.
ODT assertion during the transition period may result in an RTT change as early as the smaller of tAONPD(min.)
and (ODTLon × tCK + tAON(min.)) and as late as the larger of tAONPD(max.) and (ODTLon × tCK + tAON(max.)).
ODT de-assertion during the transition period may result in an RTT change as early as the smaller of tAOFPD(min.)
and (ODTLoff × tCK + tAOF(min.)) and as late as the larger of tAOFPD(max.) and (ODTLoff × tCK + tAOF(max.)).
See ODT for Power-Down (with DLL Frozen) Entry and Exit Transition Period table.
Note that, if AL has a large value, the range where RTT is uncertain becomes quite large. The figure below shows
the three different cases: ODT_C, asynchronous response before tANPD; ODT_B has a state change of ODT during
the transition period; ODT_A shows a state change of ODT after the transition period with synchronous response.
RTT
RTT
T1 T3 T5 T7 T9 T11 T13 T15 T17 T19 T21 T23 T25 T27 T29 T31 T33 T35
CK
Command
CKE
DRAM_RTT_A_sync
ODT_A_sync
ODT_B_tran
DRAM_RTT_B_tran
DRAM_RTT_C_async
ODT_C_async
/CK
PD exit transition period
tANPD tXPDLL
tAOF (min.)
tAOF (max.)
ODTLoff
tAOFPD (max.)
tAOFPD (min.)
ODTLoff + tAOF (max.)
ODTLoff + tAOF (min.)
tAOFPD (max.)
tAOFPD (min.)
NOP NOP
Asynchronous to Synchronous Transition during Precharge Power-Down (with DLL Frozen) Exit
(CL = 6; AL = CL - 1; CWL = 5; tANPD= WL − 1 = 9)
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
144
Asynchronous to Synchronous ODT Mode during Short CKE high and Short CKE Low Periods
If the total time in precharge power-down state or idle state is very short, the transition periods for power-down entry
and power-down exit may overlap. In this case the response of the DDR3 SDRAM RTT to a change in ODT state at
the input may be synchronous OR asynchronous from the start of the power-down entry transition period to the end
of the PD exit transition period (even if the entry period ends later than the exit period).
If the total time in idle state is very short, the transition periods for power-down exit and power-down entry may
overlap. In this case the response of the DDR3 SDRAM RTT to a change in ODT state at the input may be
synchronous OR asynchronous from the start of the power-down exit transition period to the end of the power-down
entry transition period.
Note that in the bottom part of figure below it is assumed that there was no refresh command in progress when idle
state was entered.
REF
NOP NOP NOP
NOP
CK
Command
CKE
CKE
/CK
tANPD tRFC
PD entry transition period
PD exit transition period
tANPD tXPDLL
tANPD tXPDLL
tANPD short CKE high transition period
short CKE low transition period
tXPDLL
Transition Period for Short CKE Cycles with Entry and Exit Period Overlapping
(AL = 0, WL = 5, tANPD = WL − 1 = 4)
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
145
ZQ Calibration
ZQ calibration command is used to calibrate DRAM RON and ODT values. DDR3 SDRAM needs longer time to
calibrate RON and ODT at initialization and relatively smaller time to perform periodic calibrations.
ZQCL command is used to perform the initial calibration during power-up initialization sequence. This command may
be issued at any time by the controller depending on the system environment. ZQCL command triggers the
calibration engine inside the DRAM and once calibration is achieved the calibrated values are transferred from
calibration engine to DRAM I/O which gets reflected as updated RON and ODT values.
The first ZQCL command issued after reset is allowed a timing period of tZQinit to perform the full calibration and the
transfer of values. All other ZQCL commands except the first ZQCL command issued after RESET is allowed a
timing period of tZQoper.
ZQCS command is used to perform periodic calibrations to account for voltage and temperature variations. A shorter
timing window is provided to perform the calibration and transfer of values as defined by timing parameter tZQCS.
One ZQCS command can effectively correct a minimum of 0.5% (ZQCorrection) of RON and RTT impedance error
within 64nCK for all speed bins assuming the maximum sensitivities specified in the ‘Output Driver Voltage and
Temperature Sensitivity’ and ‘ODT Voltage and Temperature Sensitivity’ tables. The appropriate interval between
ZQCS commands can be determined from these tables and other application-specific parameters. One method for
calculating the interval between ZQCS commands, given the temperature (Tdriftrate) and voltage (Vdriftrate) drift
rates that the SDRAM is subject to in the application, is illustrated. The interval could be defined by the following
formula:
×
×
where TSens = max(dRTTdT, dRONdTM) and VSens = max(dRTTdV, dRONdVM) define the SDRAM temperature
and voltage sensitivities.
For example, if TSens = 1.5%/°C, VSens = 0.15%/mV, Tdriftrate = 1°C/sec and Vdriftrate = 15mV/sec, then the
interval between ZQCS commands is calculated as:
0.5
(1.5 × 1) + (0.15 × 15) = 0.133 ≈ 128ms
No other activities should be performed on the DRAM channel by the controller for the duration of tZQinit, tZQoper or
tZQCS. The quiet time on the DRAM channel allows in accurate calibration of RON and ODT. Once DRAM
calibration is achieved the DRAM should disable ZQ current consumption path to reduce power.
All banks must be precharged and tRP met before ZQCL or ZQCS commands are issued by the controller.
ZQ calibration commands can also be issued in parallel to DLL lock time when coming out of self-refresh. Upon self-
refresh exit, DDR3 SDRAM will not perform an I/O calibration without an explicit ZQ calibration command. The
earliest possible time for ZQ Calibration command (short or long) after self-refresh exit is tXS.
In systems that share the ZQ resistor between devices, the controller must not allow any overlap of tZQoper, tZQinit
or tZQCS between the devices.
CK
A10
Address
CKE
DQ Bus*
2
Notes: 1. CKE must be continuously registered high during the calibration procedure.
2. ODT must be disabled via ODT signal or MRS during calibration procedure.
3. All device connected to DQ bus should be High impedance during calibration.
Command NOP/DESL NOP/DESL
ZQCS Valid
Valid
ZQCL
Hi-Z Activities Hi-Z Activities
A10 = L
A10 = H
X
X
tZQinit or tZQ oper tZQCS
ZQ Calibration
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
146
ZQ External Resistor Value and Tolerance
DDR3 SDRAM has a 240Ω ±1% tolerance external resistor connecting from the DDR3 SDRAM ZQ pin to ground.
The resister can be used as single DRAM per resistor.
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
147
Package Drawing
78-ball FBGA
Solder ball: Lead free (Sn-Ag-Cu)
7.50 ± 0.10
INDEX MARK
10.60 ± 0.10
0.10 S
0.20 S 1.20 max.
0.35 ± 0.05
S
B
A
INDEX MARK
0.8
9.6
1.6
6.4
Unit: mm
0.20 S B
78-φ0.45 ± 0.05
φ0.15
M
SAB
ECA-TS2-0306-01
0.20 S A
0.8
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
148
Recommended Soldering Conditions
Please consult with our sales offices for soldering conditions of the EDJ2104EDBG, EDJ2108EDBG.
Type of Surface Mount Device
EDJ2104EDBG, EDJ2108EDBG: 78-ball FBGA < Lead free (Sn-Ag-Cu) >
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
149
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR MOS DEVICES
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
2 HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to V
DD
or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
3 STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
EDJ2104EDBG, EDJ2108EDBG
Data Sheet E1797E41 (Ver. 4.1)
150
M01E1007
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
[Product applications]
Be aware that this product is for use in typical electronic equipment for general-purpose applications.
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, this product is not intended for use in the product in aerospace, aeronautics, nuclear power,
combustion control, transportation, traffic, safety equipment, medical equipment for life support, or other
such application in which especially high quality and reliability is demanded or where its failure or
malfunction may directly threaten human life or cause risk of bodily injury. Customers are instructed to
contact Elpida Memory's sales office before using this product for such applications.
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
[Usage environment]
Usage in environments with special characteristics as listed below was not considered in the design.
Accordingly, our company assumes no responsibility for loss of a customer or a third party when used in
environments with the special characteristics listed below.
Example:
1) Usage in liquids, including water, oils, chemicals and organic solvents.
2) Usage in exposure to direct sunlight or the outdoors, or in dusty places.
3) Usage involving exposure to significant amounts of corrosive gas, including sea air, CL
2
, H
2
S, NH
3
,
SO
2
, and NOx.
4) Usage in environments with static electricity, or strong electromagnetic waves or radiation.
5) Usage in places where dew forms.
6) Usage in environments with mechanical vibration, impact, or stress.
7) Usage near heating elements, igniters, or flammable items.
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
