OPTDELECTRONICS REFLECTIVE OBJECT SENSOR PIN 1 INDICATOR 083 (2.11) OPTICAL CENTERLINE Sw iN - .240 (6.10) 120 (3.08) _. be .173 ( 4.39) T .183 (4.65) .020 (0.51 .500 (12.7) sa (O51) MIN f f 4 PLCS elt 100 (2.54) 2 e t i elf .083 (2.11) ST2156 NOTES: 1, PINS 2 AND 4 ARE TYPICALLY .050 SHORTER THAN PINS 1 AND 3. 2, DIMENSIONS ARE IN INCHES (mm). 3. TOLERANCE IS +.010 (.25) UNLESS OTHERWISE SPECIFIED. OPB706A/B/C The OPB706A/B/C reflective sensors consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the OPB706A/B/C. The phototransistor responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector. @ Phototransistor output. m Unfocused for sensing diffused surfaces. w Low cost plastic housing. @ Designed for paper path and other non-contact surface sensing.REFLECTIVE OBJECT SENSOR OPTOELECTRONICS ABSOLU Storage Temperature ..... bees 40C to + 85C Operating Temperature 40C to + 85C Soldering: Lead Temperature (Iron) 2.0... eee nent ene t tetas 240C for 5 sec. * Lead Temperature (FIOW) 0.0.00. e EEE EERE EEE EDR REED 260C for 10 sec, ?*! INPUT DIODE Continuous Forward Current 2.0.00. ee nee nnn eee nee e nee nee 50 mA Reverse Voltage 60.060. en nnn nn nnn nen n enn een EEE ES 5.0 Volts Power Dissipation 2.0.0.0... ee nen R EEE EE ERED EE EEE eT Een een e eee nee 75 mW" OUTPUT TRANSISTOR Collector-Emitter Voltage 2.0.0 nnn EEE et ene Renee ene tenn nee 30 Volts Emitter-Collector Voltage... 2... cc ene nnn EEL enn DEE EEE EES 5.0 Volts Power Dissipation 2.0000... nnn en ene nett eens 75 mw PARAMETER INPUT DIODE Forward voltage Ve 1.70 Vv |. = 20mA Reverse Leakage Current la _ 100 BA V,=5.0V OUTPUT TRANSISTOR Collector-Emitter Breakdown BVeco 30 Vv |, = 100 pA, Ee = 0 Callector-Emitter Breakdown BVceo 5 _ Vv le = 100 pA, Ee = 0 Collector-Emitter Leakage loco _ 100 nA Voz = 10.0 V, Ee = 0 COUPLED On-State Collector Current OPB706A Teron 500 pA I; = 20 MA, Vee = 5.0 V, D = .050" " OPB706B leony 350 pA |, = 20 MA, Voc = 5.0 V, D = .050" 5 OPB706C letony 200 _ pA |; = 20 MA, Voc = 5.0 V, D = .050" Crosstalk lox _ 200 _ nA I; = 20 MA, Voc = 5.0 V, Ee = 0 Saturation Voltage Veeisany _ 0.40 Vv |; = 40 mA, |, = 100uA, D = .050"5 1, Derate power dissipation linearly 1.25 mW/C above 25C. 2. RMA fiux is recommended. 3. Soldering iron tip 4e (1.6 mm) minimum from housing. 4. As long as leads are not under any stress or spring tension. 5. 6. 7. . Dis the distance from the sensor face to the reflective surface. . Crosstalk (I,,) is the collector current measured with the indicated current on the input diode and with no reflective surface. . Measured using Eastman Kodak neutral white test card with 90% diffused reflectance as a reflecting surface.