INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Benefits
Absolute Maximum Ratings
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.42
RθJC Junction-to-Case - Diode ––– ––– 0.83 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.24 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 40
WtWeight ––– 6 (0.21) ––– g (oz)
ZθJC Transient Thermal Impedance Junction-to-Case (Fig.24)
12/14/99
E
G
C
IRGP30B120KD-E
Motor Control Co-Pack IGBT
PD- 93818
TO-247AD
N-channel
www.irf.com 1
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current (Fig.1) 60
IC @ TC = 100°C Continuous Collector Current (Fig.1) 30
ICM Pulsed Collector Current (Fig.3, Fig. CT.5) 120
ILM Clamped Inductive Load Current(Fig.4, Fig. CT.2) 120 A
IF @ TC = 100°C Diode Continuous Forward Current 30
IFM Diode Maximum Forward Current 120
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation (Fig.2) 300
PD @ TC = 100°C Maximum Power Dissipation (Fig.2) 120
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300, (0.063 in. (1.6mm) from case) °C
Mounting Torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
W
• Low VCE(on) Non Punch Through (NPT)
Technology
• Low Diode VF (1.76V Typical @ 25A & 25°C)
• 10 µs Short Circuit Capability
• Square RBSOA
• Ultrasoft Diode Recovery Characteristics
• Positive VCE(on) Temperature Coefficient
• Extended Lead TO-247AD Package
• Benchmark Efficiency for Motor Control
Applications
• Rugged Transient Performance
• Low EMI
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation
• Longer leads for Easier Mounting
VCES = 1200V
VCE(on) typ. = 2.28V
VGE = 15V, IC = 25A, 25°C
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Electric al C haracteristics @ T J = 25°C (unless oth erw ise specified)
Parameter Min. Typ. Max. Units Conditions Fig.
V
(BR)CES
Collector-to-Em itter Breakdown Voltage
1200 V
V
GE
= 0V,I
c
=250 µ A
∆
V
(BR)CES
/
∆
Tj
Temperature Coeff. of Breakdown Voltage
+1.2 V/°C
V
GE
= 0V, I
c
= 1 mA ( 25 -125
o
C )
2.28 2.48
I
C
= 25A, V
GE
= 15V
5, 6
Collector-to-Em itter Saturation
2.46 2.66
I
C
= 30A, V
GE
= 15V
7, 9
V
CE(on)
Voltage
3.43 4.00 V
I
C
= 60A, V
GE
= 15V
10
2.74 3.10
I
C
= 25A, V
GE
= 15V, T
J
= 125°C
11
2.98 3.35
I
C
= 30A, V
GE
= 15V, T
J
= 125°C
V
GE(th)
G ate Threshold V oltage
4.0 5.0 6.0 V
V
CE
= V
GE
, I
C
= 250 µA
9,10,11,12
∆
V
GE(th)
/
∆
Tj
Temperature Coeff. of Threshold V oltage
- 1.2
mV/
o
C
V
CE
= V
GE
, I
C
= 1 mA ( 25 -125
o
C )
g
fe
Forward T ransconductance
14.8 16.9 19.0 S
V
CE
= 50V, I
C
= 25A, PW=80µs
250
V
GE
= 0V,V
CE
= 1200V
I
CES
Z e ro G a te V olt ag e Co lle cto r C u rre nt
325 675 µA
V
GE
= 0 v, V
CE
= 1200V, T
J
=125°C
2000
V
GE
= 0 v, V
CE
= 1200V, T
J
=150°C
1.76 2.06
I
C
= 25A
V
FM
Diode Forw ard Voltage Drop
1.86 2.17 V
I
C
= 30A
8
1.87 2.18
I
C
= 25A, T
J
= 125°C
2.01 2.40
I
C
= 30A, T
J
= 125°C
I
GES
G ate-to-Emitter Leakage Current
±100 nA
V
GE
= ±20V
Switchin
g
C haracteristics @ TJ = 25°C (un less otherw ise specifie d)
Parameter Min. Typ. Max. Units Conditions Fig.
Q
g
Total G ate charge (turn-on)
169 254
I
C
= 25A
23
Q
ge
Ga te - E mitte r C h ar ge (tu rn- on )
19 29 nC
V
CC
=600V
CT 1
Q
gc
G ate - Collector Charge (turn-on)
82 123
V
GE
= 15V
E
on
T u rn -O n S w itc hin g Lo ss
1066 1250
I
C
= 25A, V
CC
= 600V
CT 4
E
off
Turn-O ff Switching Loss
1493 1800 µJ
V
GE
= 15V, Rg = 5
Ω,
L=200µH
WF1
E
tot
T ota l Sw itc hing Lo ss
2559 3050
T
J
= 25
o
C, Energy losses include tail
and diode rev erse recov ery
WF2
E
on
T u rn-o n S w itch in g L o ss
1660 1856
Ic = 2 5A, V
CC
=600V
13, 15
E
off
Turn-off Switching Loss
2118 2580 µJ
V
GE
= 15V, Rg = 5
Ω,
L=200µH
CT 4
E
tot
T ota l Sw itc hing Lo ss
3778 4436
T
J
= 125
o
C, Energy losses include tail
and diode rev erse recov ery
WF1 & 2
td(on)
Turn - on delay tim e
50 65
Ic = 2 5A, V
CC
=600V
14, 16
tr
R ise time
25 35 ns
V
GE
= 15V, Rg = 5
Ω,
L=200µH
CT 4
td(off)
Turn - off delay time
210 230
T
J
= 125
o
C,
WF1
tf
F all time
60 75
WF2
C
ies
Input Capacitance
2200
V
GE
= 0V
C
oes
O utput Capacitance
210 pF
V
CC
= 30V
22
C
res
Rev erse Transfer Capacitance
85
f = 1.0 MH z
T
J
=150
o
C, Ic = 12 0A
4
RBSOA
Rev erse bias safe operating area
FULL SQUARE
V
CC
= 1000V, V
P
= 1200V
CT 2
Rg = 5
Ω
, V
GE
= +15V to 0 V
T
J
= 150
o
C
CT 3
SCSOA
S hort Circuit S afe O perating A rea
10 ---- ---- µs
V
CC
= 900V,V
P
= 1200V
WF4
Rg = 5
Ω
, V
GE
= +15V to 0 V
E
rec
Rev erse recovery energy of the diode
1820 2400 µJ
T
J
= 125
o
C
17,18,19
trr
Diode Reverse recovery tim e
300 ns
V
CC
= 6 0 0 V , Ic = 2 5 A
20, 21
Irr
Peak Reverse Recov ery Current
34 38 A
V
GE
= 15V, Rg = 5
Ω,
L=200µH
CT 4, WF3
Le
In tern a l E mitte r In du c ta nc e
13 nH
M easured 5 m m from the package.
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Fig.1 - Maximum DC Collector
Current vs. Case Temperature
0
10
20
30
40
50
60
70
0 40 80 120 160
T
C
(°C)
I
C
( A )
Fig.2 - Power Dissipat ion vs. C ase
Temperature
0
40
80
120
160
200
240
280
320
0 40 80 120 160
TC (°C)
P t o t ( W )
Fig.3 - For w ard SOA
T
C
= 25°C; Tj<150°C
0.1
1
10
100
1000
1 10 100 1000 10000
V
CE
(V)
I
C
( A )
DC
10ms
1ms
100µs
10µs
2µs
PULSED
Fig.4 - Rever se Bias SOA
Tj = 150°C, V
GE
= 15V
1
10
100
1000
1 10 100 1000 10000
V
CE
(V)
I
C
( A )
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Fig.5 - Typica l I G B T O utput
Characteristics
Tj= -40°C; tp=300µs
0
5
10
15
20
25
30
35
40
45
50
55
60
0123456
V
CE
(V)
I
C
( A )
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8V
Fig. 6 - Typical I G B T Output
Characteristics
Tj= 25°C; tp=300µs
0
5
10
15
20
25
30
35
40
45
50
55
60
0123456
V
CE
(V)
I
C
( A )
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8V
Fig.7 - Typical I G BT Output
Characteristics
Tj= 125°C; tp=300µs
0
5
10
15
20
25
30
35
40
45
50
55
60
0123456
V
CE
(V)
I
C
( A )
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8V
Fig. 8 - Typical Diode Forward
Characteristic
tp=300µs
0
5
10
15
20
25
30
35
40
45
50
55
60
01234
V
F
(V)
I
F
( A )
- 40°C
25°C
125°C
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Fig.9 - Typical V
CE
vs V
GE
Tj = - 40°C
0
2
4
6
8
10
12
14
16
18
20
6 8 10 12 14 16 18 20
V
GE
(V)
V
C E
( V )
I
CE
=10A
I
CE
=25A
I
CE
=50A
Fig. 12 - Ty p. Tr ansfer Char acter i st i cs
V
CE
=20V; t p= 20µs
0
25
50
75
100
125
150
175
200
225
250
048121620
V
GE
(V)
I
C
( A )
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Fi
g
.10 - Typical V
CE
vs V
GE
Tj= 25°C
0
2
4
6
8
10
12
14
16
18
20
6 8 10 12 14 16 18 20
V
GE
(V)
V
C E
( V )
I
CE
=10A
I
CE
=25A
I
CE
=50A
Fig. 11 - Typical V
CE
vs V
GE
Tj = 125°C
0
2
4
6
8
10
12
14
16
18
20
6 8 10 12 14 16 18 20
V
GE
(V)
V
C E
( V )
I
CE
=10A
I
CE
=25A
I
CE
=50A
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Fig.16 - Typical Switching Time vs Rg
Tj=125°C; L=200µH; V
CE
=600V;
I
CE
=25 A; V
GE
=15V
10
100
1000
0 5 10 15 20 25 30 35 40 45 50 55
Rg (ohms)
t ( n S )
tdon
tdoff
tr
tf
Fig. 13 - Typical Energy Loss vs I c
Tj =125°C; L= 200µH; V
CE
=600V;
Rg=22Ω; V
GE
=15V
0
1000
2000
3000
4000
5000
6000
7000
8000
0 102030405060
I
C
(A)
E n e r g y ( µ J )
Eon
Eoff
Fig. 15 - Typical Ener g y Loss vs Rg
Tj = 1 25°C; L=2 00µH; V
CE
= 600V ;
I
CE
=25A; V
GE
=15V
1500
1700
1900
2100
2300
2500
2700
2900
3100
3300
3500
0 5 10 15 20 25 30 35 40 45 50 55
Rg (ohms)
E n e r g y ( u J )
Eon
Eoff
Fig.14 - Typical Swit ching Time vs I c
Tj=125°C; L= 200µH; V
CE
=600V;
Rg=22Ω;V
GE
=15V
10
100
1000
0 102030405060
I
C
(A)
t ( n S )
tdon
tdoff
tf
tr
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Fig. 20 - Typical Diode Q
RR
V
CC
=600V; V
GE
=15V; Tj=125°C
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
0 500 1000 1500
dI
F
/ dt (A/µs)
Q
R R
( n C )
51Ω
22Ω10Ω5Ω50A
40A
30A
25A
20A
Fig. 18 - Typical Diode I
RR
vs Rg
Tj=125°C; I
F
=25A
0
5
10
15
20
25
30
35
40
45
0 5 10 15 20 25 30 35 40 45 50 55
Rg (ohms)
I
R R
( A )
Fig.17 - Typical Diode IRR vs IF
Tj=125°C
0
5
10
15
20
25
30
35
40
45
0 102030405060
I
F
(A)
I R R ( A )
Rg=5Ω
Rg=10Ω
Rg=22Ω
Rg=51Ω
Fi g.19 - Typical D i ode I RR vs dI F/dt
VCC=600V; VGE=15V
IF= 25A; Tj =125°C
0
5
10
15
20
25
30
35
40
45
0 500 1000 1500
dIF / dt (A/µs)
I R R ( A )
Rg=22Ω
Rg=51Ω
R
g
=10Ω
Rg=5Ω
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Fig. 21 - Typ . Diode E
rec
vs. I
F
Tj=125°C
800
1000
1200
1400
1600
1800
2000
2200
2400
0 102030405060
I
F
(A)
E n e r g y ( u J )
5Ω
10Ω
22Ω
51Ω
Fig.23 - Typ. Gate Charge vs. V
GE
I
C
=25A; L=6 00µH
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200
Q
G
, Total Gate Charge ( nC)
V
G E
( V )
600V
800V
Fig.22 - Typical Capacit ance vs V
CE
V
GE
=0V; f=1M Hz
10
100
1000
10000
0 20406080100
V
CE
(V)
C a p a c I t a n c e ( p F )
C
ies
C
oes
C res
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Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case
0.001
0.01
0.1
1
10
0.00001 0.00010 0.00100 0.01000 0.10000 1.00000 10.00000
t
1
, Rectangular Pulse Duration (sec)
θ
SINGLE
PULSE
0.05
0.02
D =0.5
0.01
0
.2
0.1
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P
DM
t
1
t
2
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Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit
Fig. CT.3 - S.C. SOA Circuit
L
Rg
80 V DUT
1000V
D
C
Driver
DUT
900V
Fig. CT.4 - Switching Loss Circuit
1K
VCC
DUT
0
L
L
Rg
VCC
diode clamp /
DUT
DUT /
DRIVER
- 5V
Rg
VCC
DUT
R =
V
CC
I
CM
Fig. CT.5 - Resistive Load Circuit
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Fig. WF.1 - Typ. Turn-off Loss Waveform
@ Tj=125°C using Fig. CT.4 Fig. WF.2 - Typ. Turn-on Loss Waveform
@ Tj=125°C using Fig. CT.4
Fig. WF.4 - Typ. S.C. Waveform
@ T
C
=150°C using Fig. CT.3
Fig. WF.3 - Typ. Diode Recovery Waveform
@ Tj=125°C using Fig. CT.4
0
200
400
600
800
1000
1200
-10 0 10 20 30
t i me (µs)
V C E
( V )
-50
0
50
100
150
200
250
I C E
( A )
-1200
-1000
-800
-600
-400
-200
0
-0.5 0.0 0.5 1.0
t I me (µS)
V C E ( V )
-30
-20
-10
0
10
20
30
I C E ( A )
Peak
IRR
QRR
tRR
10%
Peak
IRR
-100
0
100
200
300
400
500
600
700
800
900
4.0 4.1 4.2 4.3 4.4 4.5
t I me (µs)
V C E
( V )
-5
0
5
10
15
20
25
30
35
40
45
I C E
( A )
TEST CURRENT
90% test current
10% test current
Eon Loss
5% VCE
t r
-100
0
100
200
300
400
500
600
700
800
-0.5 0.0 0.5 1.0 1.5 2.0 2.5
t I me (µs)
V C E ( V )
-5
0
5
10
15
20
25
30
35
40
I C E ( A )
90% ICE
t f
5% VCE
5% ICE
Eoff Loss
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TO-247AD Case Outline and Dimensions
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 12/99
∆ΡΓ. Νο :
