NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC(R) NRF1 process - A proprietary GaN-on-Silicon technology FEATURES * Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 - 2700MHz * 125W P3dB Peak envelope power * 90W P3dB CW power * 10W linear power @ 2.0% EVM for single carrier OFDM, 10.3dB peak/avg, 10MHz channel bandwidth, 16.5dB gain, 26% efficiency * Characterized for operation up to 32V * 100% RF tested * Thermally enhanced industry standard package * High reliability gold metallization process * Lead-free and RoHS compliant * Subject to ECCN 3A982.a.1 export control 2100 - 2700 MHz 125 Watt, 28 Volt GaN HEMT RF Specifications (CW): VDS = 28V, IDQ = 600mA, Frequency = 2500MHz, TC = 25C, Measured in Nitronex Test Fixture Symbol Parameter Min Typ Max Units P3dB Average Output Power at 3dB Gain Compression 80 90 - W GSS Small Signal Gain 14 16.5 - dB Drain Efficiency at 3dB Gain Compression 55 62 - % h Typical 2-Tone Performance: VDS = 28V, IDQ = 600mA, Frequency = 2500MHz, Tone spacing = 1MHz, TC = 25C Measured in Load Pull System (Refer to Table 1 and Figure 1) Symbol Parameter Typ Units P3dB,PEP Peak Envelope Power at 3dB Compression 125 W P1dB,PEP Peak Envelope Power at 1dB Compression 90 W Peak Envelope Power at -35dBm IMD3 80 W PIMD3 Typical OFDM Performance: VDS = 28V, IDQ = 600mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst, continuous frame data, 10MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF. Frequency = 2500 to 2700MHz. POUT,AVG = 10W, TC=25C. Symbol GP h EVM NPT25100 Parameter Typ Units 16.5 dB Drain Efficiency 26 % Error Vector Magnitude 2.0 % Power Gain Page 1 NDS-001 Rev 6, April 2013 NPT25100 DC Specifications: TC = 25C Symbol Parameter Min Typ Max Units 100 - - V - 9 18 mA Off Characteristics VBDS Drain-Source Breakdown Voltage (VGS = -8V, ID = 36mA) IDLK Drain-Source Leakage Current (VGS = -8V, VDS = 60V) On Characteristics VT Gate Threshold Voltage (VDS = 28V, ID = 36mA) -2.3 -1.8 -1.3 V VGSQ Gate Quiescent Voltage (VDS = 28V, ID = 700mA) 600mA) -2.0 -1.5 -1.0 V RON On Resistance (VGS = 2V, ID = 270mA) - 0.13 0.14 W 19.0 - 20.5 21.0 - A Min Typ Max Units - 1.75 - C/W ID,MAX Drain Current (VDS = 7V pulsed, 300ms pulse width, 0.2% duty cycle) Thermal Resistance Specification Symbol qJC Parameter Thermal Resistance (Junction-to-Case), TJ = 145 C Absolute Maximum Ratings: Not simultaneous, TC = 25C unless otherwise noted Symbol Parameter Max Units V VDS Drain-Source Voltage 100 VGS Gate-Source Voltage -10 to 3 V IG Gate Current 180 mA PT Total Device Power Dissipation (Derated above 25C) 100 W TSTG TJ Storage Temperature Range Operating Junction Temperature -65 to 150 C 200 C HBM Human Body Model ESD Rating (per JESD22-A114) 2 (>2000V) MM Machine Model ESD Rating (per JESD22-A115) M2 (>100V) NPT25100 Page 2 NDS-001 Rev 6, April 2013 NPT25100 Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance, VDS = 28V, IDQ = 600mA Frequency (MHz) ZS (W) ZL (W) 2140 12.1 - j20.0 2.6 - j2.6 2300 10.0 - j3.0 2.5 - j2.3 2400 9.5 - j3.0 2.5 - j2.5 2500 9.0 - j3.0 2.5 - j2.7 2600 8.5 - j3.0 2.5 - j3.1 2700 8.0 - j3.0 2.5 - j3.3 ZS is the source impedance presented to the device. ZL is the load impedance presented to the device. Figure 1 - Optimal Impedances for CW Performance, VDS = 28V, IDQ = 600mA NPT25100 Page 3 NDS-001 Rev 6, April 2013 NPT25100 Figure 2 - Typical CW Performance in Load-Pull System, VDS = 28V, IDQ = 600mA, Frequency = 2300 to 2700MHz Figure 3 - Typical CW Performance in Load-Pull System, VDS = 28V & 32V, IDQ = 600mA, Frequency = 2500MHz, Impedances Held Constant Figure 4 - Typical CW Performance in Load Pull System, VDS = 28V, IDQ = 600mA Figure 5 - Typical CW and PEP Performance in Load-Pull System, VDS = 28V, IDQ = 600mA, Frequency = 2500MHz, Tone Spacing = 1MHz NPT25100 Page 4 NDS-001 Rev 6, April 2013 NPT25100 Figure 6 - Typical IMD3 Performance in Load-Pull System, VDS = 28V, IDQ = 600mA, Frequency = 2500MHz, Tone Spacing = 1MHz Figure 7 - Typical CW, PEP, and Pulsed Performance in Load-Pull System, Pulse Width = 10ms, Duty Cycle = 1%, VDS = 28V, IDQ = 600mA, Frequency = 2500MHz, Tone Spacing = 1MHz Figure 8 - Typical Pulsed CW Performance in Load-Pull System, 1% Duty Cycle, VDS = 28V, IDQ = 600mA, Frequency = 2500MHz Figure 9 - Typical OFDM Performance in Load-Pull System, VDS = 28V & 32V, IDQ = 600mA, Frequency = 2500MHz NPT25100 Page 5 NDS-001 Rev 6, April 2013 NPT25100 Figure 10 - Typical OFDM Performance in Load-Pull System, POUT,AVG = 10W, VDS = 28V, IDQ = 600mA Figure 11 - Typical LTE (Long Term Evolution, 20MHz channel), Nitronex Test Fixture, VDS = 28V, IDQ = 600mA, Frequency = 2600MHz Figure 12 - OFDM Performance in Nitronex Test Fixture as a Function of IDQ, VDS = 28V, IDQ = 500 to 1000mA, Frequency = 2500MHz Figure 13 - Typical W-CDMA Performance in Load-Pull System, VDS = 28V, IDQ = 600mA, Frequency = 2110 to 2170MHz NPT25100 Page 6 NDS-001 Rev 6, April 2013 NPT25100 Figure 14 - OFDM performance in Nitronex Test Fixture as a Function of IDQ, VDS = 28V, IDQ = 500mA to 1000mA, Frequency = 2500MHz Figure 15 - OFDM performance in Nitronex Test Fixture as a Function of Case Temperature, VDS = 28V, IDQ = 600mA, Frequency = 2500MHz Figure 16 - S-parameters Measured in Nitronex Test Fixture, VDS = 28V, IDQ = 600mA Figure 17 - Quiescient Gate Voltage (VGSQ) Required to Reach IDQ as a Function of Case Temperature, Measured in Nitronex Test Fixture at VDS = 28V NPT25100 Page 7 NDS-001 Rev 6, April 2013 NPT25100 Figure 18 - Power Derating Curve NPT25100 Figure 19 - MTTF of NRF1 Devices as a Function of Junction Temperature Page 8 NDS-001 Rev 6, April 2013 NPT25100 C9 C10 VVDS DS R2 C12 VGS V GS C8 C4 C7 C11 C5 C3 C6 R1 VININ RF RF VOUTOUT C2 C1 C14 C15 C16 C13 NITRONEX PA1 CORPORATION NBD-019_Rev2 Figure 20 - APP-NPT25100-25 2500MHz Demonstration Board NPT25100 Page 9 NDS-001 Rev 6, April 2013 NPT25100 6 5 4 3 2 1 REVISION RECORD ECO NO: LTR APPROVED: DATE: D D VDS VGS C12 12pF 0805 VGS + C9 150uF C3 1uF 1812 C4 0.1uF 1206 C5 VDS + C10 R2 270uF 0.33 0805 C11 0.01uF 1206 12pF 0805 C8 C C7 0.01uF 1206 0.1uF 1206 C6 C 1uF 1812 R1 10 0805 RFIN 168mils 65mils RFIN PA1 TL2 0805 C13 0.9pF 0805 G TL1 3.3pF C2 NPT25100 C1 207mils 610mils 200mils 65mils 300mils 65mils TL6 TL7 TL5 D S 580mils 410mils RFOUT RFOUT 1.0pF 0805 C15 C14 .8pF 0805 1.8pF 0805 C16 1.0pF 0805 B B Nitronex Corporation Figure 21 - APP-NPT25100-25 2500MHz Demonstration Board Equivalent Circuit COMPANY: NITRONEX CORPORATION DRAWN: A R. Sadler TITLE: APP-NPT25100-25 Schematic DATED: 10/6/2007 6/2007 Table 2: APP-NPT25100-25 2500MHz Demonstration BoardR. Sadler Bill of10/ Materials CHECKED: DATED: Name Value Tolerance Vendor C1 3.3pF +/- 0.1pF ATC C2 1.2pF +/- 0.1pF ATC SCALE: SIZE: B NA DRAWING NO: REV: SCH-019 Vendor Number SHEET: 1OF ATC600F3R3B 1 1 ATC100B1R2BT C3 1uF 20% Panasonic ECJ-5YB2A105M C4 0.1uF 10% Kemet C1206C104K1RACTU C5 0.01uF 10% AVX 12061C103KAT2A C6 1uF 10% Panasonic ECJ-5YB2A105M C7 0.1uF 10% Kemet C1206C104K1RACTU C8 0.01uF 10% AVX 12061C103KAT2A C9 150uF 20% Nichicon UPW1C151MED C10 270uF 20% United Chmi-Con ELXY630ELL271MK25S C11 33pF 5% ATC ATC600F330B C12 33pF 5% ATC ATC600F330B C13 0.9pF +/- 0.1pF ATC ATC600F0R9B C14 1.8pF +/- 0.1pF ATC ATC600F1R8B C15 Do Not Place C16 0.8pF +/- 0.1pF ATC ATC600F0R8B PA1 -- -- -- NPT25100B R1 10 ohm 1% Panasonic ERJ-6ENF10R0V R2 0.033 ohm 1% Panasonic ERJ-6RQFR33V NBD-019_Rev2 -- -- Alberta Printed Circuits NBD-019_Rev2 Rogers R04350, t = 30mil er = 3.5 Substrate NPT25100 Page 10 NDS-001 Rev 6, April 2013 A NPT25100 Ordering Information1 Part Number Description NPT25100B NPT25100 in AC780B-2 Metal-Ceramic Bolt-Down Package NPT25100P NPT25100 in AC780P-2 Metal-Ceramic Pill Package 1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com Figure 22 - AC780B-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm]) NPT25100 Page 11 NDS-001 Rev 6, April 2013 NPT25100 Figure 23 - AC780P-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm]) NPT25100 Page 12 NDS-001 Rev 6, April 2013 NPT25100 Nitronex, LLC 2305 Presidential Drive Durham, NC 27703 USA +1.919.807.9100 (telephone) +1.919.807.9200 (fax) info@nitronex.com www.nitronex.com Additional Information This part is lead-free and is compliant with the RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). 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All other product or service names are the property of their respective owners. (c) Nitronex, LLC 2012. All rights reserved. NPT25100 Page 13 NDS-001 Rev 6, April 2013