DATA SHEET
GaAs MES FET
NES1821B-30
30W L-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
1996©
Document No. P12094EJ1V0DS00 (1st edition)
Date Published November 1996 N
Printed in Japan
PRELIMINARY DATA SHEET
DESCRIPTION
The NES1821B-30 is power GaAs FET which provides
high output power and high gain in the 1.8-2.1 GHz
band.
Internal input matching circuits are designed to
optimize performance. The device has a 0.8
m
m gate
length for increased linear gain. To reduce thermal
resistance, the device uses PHS (Plated Heat Sink)
technology.
The device incorporates WSi (tungsten silicide) gate
for high reliability and SiO2 glassivation for
surface stability.
FEATURES
·
High output power
·
High gain
·
High power added efficiency
·
Internally matched input
·
High reliability
ABSOLUTE MAXIMUM RATINGS (TA = 25
°°
C)
Drain to Source Voltage VDS 15 V
Gate to Source Voltage VGS –7 V
Gate to Drain Voltage VGD –18 V
Drain Current ID27 A
Gate Current IG180 mA
Total Power Dissipation PT(*) 110 W
Channel Temperature Tch 175
°
C
Storage Temperature Tstg –65 to +175
°
C
*TC = 25
°
C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
PACKAGE DIMENSIONS (UNIT: mm)
SOURCE
R1.2
2.4
DRAIN
1.0±0.1
GATE
24±0.3
20.4
17.4±0.38.0
0.1
2.4
0.2 MAX
1.8 4.5 MAX
2
NES1821B-30
ELECTRICAL CHARACTERISTICS (TA = 25
°°
C)
CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Saturated Drain Current IDSS
--
18.0
--
AVDS = 2.5 V, VGS = 0 V
Pinch-off Voltage VP
-
4.0
-
2.6
--
VVDS = 2.5 V, IDS = 80 mA
Thermal Resistance Rth
--
1.4 1.7
°
C/W Channel to Case
Output Power PO *1 44.5 45.0
--
dBm
Linear Gain GL 11.0 13.0
--
dB
Drain Current ID *2
--
2.5
--
A
*1 PIN = 35.5 dBm *2 PO = 37 dBm
RECOMMENDING OPERATING LIMITS
Rg *3
(
W
)VDS
(V) Tch
(
°
C) G.C.P
*4
30 to 10 to 125 to 3 dB comp
Note
*3 Rg is the series resistance between the gate supply and the FET gate.
*4 G.C.P: Gain Compression Point
freq. = 1.96 GHz
VDS = 10 V
IDS = 1.0 A set
Rg = 30
W
*3
3
NE
S
1821B-30
TYPICAL RF PERFORMANCE
f = 1.96 GHz, Vd = 10 V, Id = 1 A set, Rg = 30
W
1813 23 28 33 38
Pin (dBm)
46
41
36
31
26
21
5000
7000
9000
1000
3000
–1000 –50
0
50
100
150
200
Pout
(dBm)
Pout
I
D
I
g
I
D
(mA) I
g
(mA)
I
g
4
NES1821B-30
S-PARAMETER
VDS = 10 V, Ids = 1 A set
FREQUENCY S11 S21 S12 S22
MHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
1 600.000 0.793 114.8 1.210
-
18.4 0.027
-
92.7 0.903 144.0
1 610.000 0.786 113.9 1.235
-
20.1 0.028
-
94.2 0.904 143.5
1 620.000 0.779 113.0 1.256
-
21.2 0.029
-
95.7 0.908 143
1 630.000 0.774 112.2 1.286
-
21.8 0.030
-
97.7 0.909 142.5
1 640.000 0.766 111.3 1.337
-
22.3 0.032
-
100.4 0.912 141.8
1 650.000 0.758 110.4 1.412
-
23 0.033
-
103.3 0.914 141.3
1 660.000 0.752 109.4 1.511
-
24.7 0.034
-
106.6 0.919 140.7
1 670.000 0.744 108.5 1.616
-
27.7 0.035
-
109.7 0.920 140.0
1 680.000 0.736 107.4 1.711
-
32.0 0.036
-
112.6 0.924 139.3
1 690.000 0.728 106.4 1.768
-
36.8 0.036
-
114.6 0.927 138.5
1 700.000 0.720 105.3 1.791
-
41.4 0.036
-
116.1 0.929 137.6
1 710.000 0.710 104.2 1.783
-
45.5 0.037
-
116.8 0.931 136.9
1 720.000 0.698 103.0 1.758
-
48.3 0.039
-
117.4 0.934 136.0
1 730.000 0.688 101.9 1.748
-
49.8 0.041
-
118.1 0.936 134.9
1 740.000 0.675 100.6 1.763
-
50.2 0.045
-
119.6 0.938 133.8
1 750.000 0.662 99.3 1.822
-
49.9 0.049
-
122.5 0.940 132.7
1 760.000 0.646 98.0 1.947
-
50.1 0.052
-
126.5 0.940 131.4
1 770.000 0.631 96.5 2.136
-
51.7 0.055
-
131.1 0.939 130.2
1 780.000 0.614 94.9 2.350
-
55.6 0.057
-
136.0 0.937 128.6
1 790.000 0.593 93.3 2.547
-
61.2 0.059
-
140.2 0.934 127.0
1 800.000 0.571 91.6 2.682
-
67.6 0.060
-
143.8 0.929 125.2
1 810.000 0.546 89.8 2.742
-
73.9 0.062
-
146.4 0.923 123.4
1 820.000 0.519 87.9 2.749
-
79.0 0.065
-
148.6 0.916 121.3
1 830.000 0.488 85.9 2.748
-
83.0 0.068
-
151.0 0.907 119.1
1 840.000 0.453 83.9 2.771
-
86.0 0.073
-
154.1 0.891 116.5
1 850.000 0.411 81.9 2.846
-
88.3 0.080
-
158.1 0.870 113.6
1 860.000 0.362 80.3 3.006
-
90.9 0.086
-
163.4 0.845 110.5
1 870.000 0.307 79.5 3.249
-
94.8 0.093
-
169.5 0.814 107.1
1 880.000 0.243 80.9 3.544
-
100.6 0.098
-
175.9 0.774 103.2
1 890.000 0.176 88.9 3.819
-
108.4 0.104 177.3 0.721 99.1
1 900.000 0.124 113.0 4.028
-
117.1 0.109 170.1 0.651 94.9
1 910.000 0.134 152.3 4.143
-
125.9 0.113 162.4 0.569 90.6
1 920.000 0.208 172.6 4.189
-
134.3 0.117 154.1 0.470 87.5
1 930.000 0.307 177.0 4.201
-
142.6 0.118 145.0 0.360 86.5
1 940.000 0.410 175.3 4.179
-
151.0 0.117 135.9 0.253 91.9
1 950.000 0.511 170.6 4.110
-
159.7 0.115 127.2 0.174 112.1
1 960.000 0.602 164.9 3.967
-
168.2 0.111 118.9 0.168 147.0
1 970.000 0.678 158.9 3.762
-
176.3 0.107 111.1 0.230 168.2
1 980.000 0.739 152.9 3.531 176.3 0.101 103.6 0.312 175.3
1 990.000 0.787 147.3 3.299 169.6 0.094 96.5 0.391 176.5
2 000.000 0.822 142.2 3.081 163.3 0.088 90.5 0.462 175.3
2 010.000 0.848 137.5 2.850 157.0 0.081 85.3 0.524 173.4
2 020.000 0.865 133.2 2.607 151.2 0.076 81.0 0.576 171.2
2 030.000 0.880 129.2 2.363 146.2 0.071 77.2 0.623 168.9
2 040.000 0.887 125.7 2.129 142.6 0.068 73.5 0.661 166.6
2 050.000 0.892 122.5 1.927 140.2 0.065 69.3 0.695 164.6
2 060.000 0.895 119.4 1.772 138.9 0.062 64.3 0.724 162.6
2 070.000 0.898 116.5 1.670 138.0 0.059 58.7 0.747 160.7
2 080.000 0.897 113.8 1.613 136.6 0.054 53.5 0.768 158.7
2 090.000 0.896 111.1 1.583 134.1 0.050 49.2 0.788 157.1
2 100.000 0.894 108.7 1.546 130.3 0.045 45.9 0.804 155.5
2 110.000 0.891 106.3 1.485 125.4 0.041 44.6 0.819 154.0
2 120.000 0.887 103.9 1.386 120.2 0.038 43.6 0.831 152.7
2 130.000 0.884 101.7 1.265 116.0 0.036 43.7 0.842 151.3
2 140.000 0.879 99.5 1.141 113.2 0.035 43.5 0.851 150
2 150.000 0.875 97.2 1.031 112.1 0.035 42.4 0.860 148.7
2 160.000 0.871 95.1 0.949 112.6 0.035 39.7 0.871 147.5
2 170.000 0.865 93.0 0.897 114 0.034 35.5 0.879 146.4
2 180.000 0.861 90.9 0.880 115.0 0.033 30.5 0.885 145.4
2 190.000 0.856 88.6 0.888 114.7 0.030 26.0 0.892 144.2
5
NE
S
1821B-30
[MEMO]
6
NES1821B-30
[MEMO]
7
NE
S
1821B-30
[MEMO]
NES1821B-30
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document.
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property rights of third parties by or arising from use of a device described herein or any other liability arising
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
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Anti-radioactive design is not implemented in this product.
M4 96. 5