© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/20/13
TVS Diode Arrays (SPA® Diodes)
Lightning Surge Protection - SLVU2.8 Series
Description
Features
Applications
The SLVU2.8 series was designed to protect low voltage,
CMOS devices from ESD and lightning induced transients.
There is a compensating diode in parallel with the low
voltage TVS to protect one unidirectional line or a high
speed data pair when two devices are paired together.
These robust structures can safely absorb repetitive ESD
strikes at ±30kV (contact discharge) per the IEC61000-4-2
standard and each structure can safely dissipate up to 40A
(IEC61000-4-5, tP=8/20μs) with very low clamping voltages.
Pinout
Functional Block Diagram
• ESD,IEC61000-4-2,
±30kV contact, ±30kV air
• EFT,IEC61000-4-4,40A
(5/50ns)
• Lightning,IEC61000-4-5,
40A (8/20μs)
• Lowcapacitanceof2pF
per line (Pin 2 to 1)
• Lowleakagecurrentof
1μA (MAX) at 2.8V
• SmallSOT23-3(JEDEC
TO-236) package saves
board space
• 10/100/1000Ethernet
• WAN/LANEquipment
• SwitchingSystems
• Desktops,Servers,and
Notebooks
• AnalogInputs
• BaseStations
12
3
3
12
RoHS
Pb
GREEN
Ethernet
PHY
J1
J8
RJ-45
Connector
NC
NC
Application Example
SLVU2.8 Series 2.8V 40A TVS Array
Additional Information
Datasheet Samples
Resources
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/20/13
TVS Diode Arrays (SPA® Diodes)
Lightning Surge Protection - SLVU2.8 Series
Absolute Maximum Ratings
Parameter Rating Units
Peak Pulse Power (tP=8/20µs) 600 W
Peak Pulse Current (tP=8/20µs) 40 A
Operating Temperature –40 to 125 ºC
Storage Temperature –55 to 150 ºC
Electrical Characteristics (TOP = 25°C)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage VRWM IR≤1μA 2.8 V
Reverse Breakdown Voltage VBR IT=2μA 3.0 V
Snap Back Voltage VSB IT=50mA 2.8 V
Reverse Leakage Current ILEAK VR=2.8V (Pin 2 or 3 to 1) 1 μA
Clamping Voltage1
VC
IPP=5A, tP=8/20μs (Pin 3 to 1) 5.7 7. 0 V
Clamping Voltage1IPP=24A, tP=8/20μs (Pin 3 to 1) 8.3 12.5 V
Clamping Voltage1IPP=5A, tP=8/20μs (Pin 2 to 1) 7. 0 8.5 V
Clamping Voltage1IPP=24A, tP=8/20μs (Pin 2 to 1) 13.9 15.0 V
Dynamic Resistance RDYN (VC2 - VC1) / (IPP2 - IPP1) (Pin 2 to 1) 0.4 Ω
ESD Withstand Voltage1VESD
IEC61000-4-2 (Contact) ±30 kV
IEC61000-4-2 (Air) ±30 kV
Diode Capacitance1CDVR=0V, f=1MHz (Pin 2 to 1) 2.0 2.5 pF
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Note: 1Parameter is guaranteed by design and/or device characterization.
Figure 2: Clamping Voltage vs. IPP
Figure 1:
Capacitance vs. Reverse Voltage
Figure 3: Pulse Waveform
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0 0.5 1.0 1.5 2.0 2.5
DC Bias (V)
Capacitance (pF)
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
0.0 5.0 10.0 15.0 20.0 25.0 30.0
Time (μs)
Percent of I
PP
0
2
4
6
8
10
12
14
0510 15 20 25
Peak Pulse Current-I
PP
(A)
Clamping Voltage-V
C
(V)
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/20/13
TVS Diode Arrays (SPA® Diodes)
Lightning Surge Protection - SLVU2.8 Series
Product Characteristics
Lead Plating Matte Tin
Lead Material Copper Alloy
Lead Coplanarity 0.0004 inches (0.102mm)
Substitute Material Silicon
Body Material Molded Epoxy
Flammability UL 94 V-0
Notes :
1. All dimensions are in millimeters
2. Dimensions include solder plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form.
5. Package surface matte finish VDI 11-13.
Time
Temperature
TP
TL
TS(max)
TS(min)
25
tP
tL
tS
time to peak temperature
Preheat
P
rehea
t
Ramp-up
R
amp-up
Ramp-down
R
amp-d
o
Critical Zone
TL to TP
C
ritical Zon
e
T
L
to
T
P
Reflow Condition Pb – Free assembly
Pre Heat
- Temperature Min (Ts(min))150°C
- Temperature Max (Ts(max))200°C
- Time (min to max) (ts)60 – 180 secs
Average ramp up rate (Liquidus) Temp
(TL) to peak 3°C/second max
TS(max) to TL - Ramp-up Rate 3°C/second max
Reflow - Temperature (TL) (Liquidus) 217°C
- Temperature (tL)60 – 150 seconds
Peak Temperature (TP)260+0/-5 °C
Time within 5°C of actual peak
Temperature (tp)20 – 40 seconds
Ramp-down Rate 6°C/second max
Time 25°C to peak Temperature (TP)8 minutes Max.
Do not exceed 260°C
Soldering Parameters
NC
Data Line
Protection of one unidirectional line
Low capacitance protection of one high speed data pair
D1
D2
Ethernet
PHY
J1
J8
RJ-45
Connector
NC
NC
Protection of one unidirectional data line is realized by
connecting pin 3 to the protected line, and pins 1 and 2 to
GND. In this configuration, the device presents a maximum
loading capacitance of tens of picofarads. During positive
transients, the internal TVS diode will conduct and steer
current from pin 3 to 1 (GND), clamping the data line at or
below the specified voltages for the device (see Electrical
Characteristics section). For negative transients, the internal
compensating diode is forward biased, steering the current
from pin 2 (GND) to 3.
Application Example Detail
Low capacitance protection of a high-speed data pair is
realized by connecting two devices in antiparallel. As shown,
pin 1 of the first device is connected to D1 and pin 2 is
connected to D2. Additionally, pin 2 of the second device is
connected to D1 and pin 1 is connected to D2. Pin 3 must be
NC (or not connected) for both devices. When the potential
on D1 exceeds the potential on D2 (by the rated standoff
voltage), pin 2 on the second device will steer current into
pin 1. The compensating diode will conduct in the forward
direction steering current into the avalanching TVS diode
which is operating in the reverse direction. For the opposite
transient, the first device will behave in the same manner. In
this two device arrangement, the total loading capacitance is
two times the rated capacitance from pin 2 to pin 1 which will
typically be much less than 10pF making it suitable for high-
speed data pair such as 10/100/1000 Ethernet.
NC
Data Line
Protection of one unidirectional line
Low capacitance protection of one high speed data pair
D1
D2
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/20/13
TVS Diode Arrays (SPA® Diodes)
Lightning Surge Protection - SLVU2.8 Series
Package Dimensions — SOT-23
Package SOT23-3
Pins 3
JEDEC TO-236
Millimetres Inches
Min Max Min Max
A0.89 1. 12 0.035 0.044
A1 0.01 0.1 0.0004 0.004
b0.3 0.5 0.012 0.020
c0.08 0.2 0.003 0.008
D2.8 3.04 0.110 0.120
E2.1 2.64 0.083 0.104
E1 1. 2 1. 4 0.047 0.055
e0.95 BSC 0.038 BSC
e1 1.90 BSC 0.075 BSC
L1 0.54 REF 0.021 REF
M2.29 .90
N0.95 0.038
O0.78 0.30 TYP
P0.78 0.30 TYP
b
3
E1 E
2
1
e
e1
D
A
A1
C
L1
M
N
O
P
Recommended Pad Layout
Embossed Carrier Tape & Reel Specification — SOT23-3 Package
[.009 ± .0005]
.229 ± .013
[.028]
13.5º MAX
8º MAX
9º MAX
.71
[.081]
2.06
.99
[.039]
.46
[.018]
A
0
K
0
B
0
P0 P1
P
D
D1
E
F
W
Symbol Millimetres Inches
Min Max Min Max
A0 3.05 3.25 0.12 0.128
B0 2.67 2.87 0.105 0.113
D3.9 4.1 0.153 0.161
D1 1.95 2.05 0.788 0.792
E1.65 1.85 0.065 0.073
F3.45 3.55 0.136 0.14
K0 1. 12 1.32 0.476 0.484
P0.95 1.05 0.037 0.041
P0 3.9 4.1 0.153 0.161
P1 1. 6 0.063
W7. 9 8.3 0.311 0.327
Ordering Information
Part Number Package Marking Min. Order Qty.
SLVU2.8HTG SOT23-3 U2.8 3000
Part Numbering System Part Marking System
SLVU2.8 HTG
Series Package
H = SOT23-3
T= Tape & Reel
G= Green
U2.8
U2.8
Product Series
U = SLVU2.8
Voltage Level
