Features
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Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
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GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RF MEMS
D10040200GTH
40-1000MHz GaAs POWER DOUBLER HYBRID
The D10040200GTH is a Hybrid Power Doubler amplifier module. The
part employs GaAs die and is operated from 40MHz to 1000MHz. It pro-
vides excellent linearity and superior return loss performance with low
noise and optimal reliability.
OUTPUTINPUT
+VB
Excellent Linearity
Superior Return Loss Perfor-
mance
Extremely Low Distortion
Optimal Reliability
Low Noise
Unconditionally Stable Under
All Terminations
20.0dB Min. Gain at 1GHz
440mA Max. at 24VDC
Applications
40MHz to 1000MHz CATV
Amplifier Systems
Document Revision Level B
9
Package: SOT-115J
D10040200G
TH 40-
1000MHz
GaAs Power
Doubler Hybrid
Parameter Specification Unit Condition
Min. Typ. Max.
Overall VB= 24V; TMB=30°C; ZS=ZL=75Ω
Power Gain 19.5 20.0 20.5 dB f=50MHz
20.0 21.5 22 dB f=1000MHz
Slope [1] 1.0 1.5 2.0 dB f=40MHz to 1000MHz
Flatness of Frequency Response 0.8 dB f=40MHz to 1000MHz (Peak to Valley)
Input Return Loss 20.0 dB f=40MHz to 320MHz
19.0 dB f=320MHz to 640MHz
17.0 dB f=640MHz to 870MHz
16.0 dB f= 870 MHz to 1000 MHz
Output Return Loss 20.0 dB f=40MHz to 320MHz
19.0 dB f=320MHz to 640MHz
18.0 dB f=640MHz to 870MHz
17.0 dB f=870MHz to 1000MHz
Noise Figure 5.5 6.5 dB f=50MHz to 1000MHz
Total Current Consumption (DC) 420.0 440.0 mA
1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.