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TOSHIBA Schottky Barrier Diode
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○ DC-DC Converters
○ Radio-Frequency Rectification in Switching Regulators
○ Reverse-Current Protection in Mobile Devices
• Repetitive peak reverse voltage : VRRM = 30 V
• Average forward current : IF (AV) = 5.0 A
• Peak forward voltage : VFM = 0.37 V (max)
• Suitable for high-density board assembly due to the use of a small
Toshiba Nickname: M−FLATTM
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Repetitive peak reverse voltage VRRM 30 V
Average forward current IF (AV) 5.0 (Note 1) A
Non-repetitive peak forward surge current IFSM 70 (50 Hz) A
Junction temperature Tj −40 to 125 °C
Storage temperature Tstg −40 to 150 °C
Note 1: Tℓ = 36°C: Rectangular waveform (α = 180°), VR = 15 V
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Peak forward voltage
VFM (1) IFM = 1 A (pulse test) 0.27
V
VFM (2) IFM = 3 A (pulse test) 0.31
VFM (3) IFM = 5 A (pulse test) 0.35 0.37
Repetitive peak reverse current
IRRM (1) VRRM = 5 V (pulse test) 0.31
mA
IRRM (2) VRRM = 30 V (pulse test) 3.3 8.0
Junction capacitance Cj VR = 10 V, f = 1.0 MHz 330 pF
Thermal resistance
(junction to ambient)
Rth (j-a)
Device mounted on a ceramic board
board size 50 mm × 50 mm
soldering land size 2 mm × 2 mm
board thickness 0.64 mm
60
°C/W
Device mounted on a glass-epoxy board
board size 50 mm × 50 mm
soldering land size 6 mm × 6 mm
board thickness 1.6 mm
135
Thermal resistance (junction to lead) Rth (j-ℓ) 16
Unit
: mm
JEDEC ―
JEITA ―
TOSHIBA 3-4E1S
Weight: 0.023 g (typ.)
Start of commercial production
2000-07
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Marking
Abbreviation Code Part No.
S4 CMS04
Land pattern dimensions for reference only
Handling Preca ution
1) Schottky barrier diodes have reverse current characteristic compared to the other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. This
device is VF - IRRM trade-off type, lower VF higher IRRM; therefore, thermal runaway might occur when voltage is
applied. Please take forward and reverse loss into consideration during design.
2) The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we recommend
when you design a circuit with a device.
VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/°C. Take this
temperature coefficient into account designing a device at low temperature.
IF (AV): We recommend that the worst case current be no greater than 80% of the absolute maximum rating of
IF(AV) and Tj be below 100°C. When using this device, take the margin into consideration by using an
allowable Ta max - IF(AV) curve.
IFSM: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,
which seldom occurs during the lifespan of the device.
Tj: Derate this rating when using a device in order to ensure high reliability. We recommend that the device
be used at a Tj of below 100°C.
3) Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When
using a device, please design a circuit board and a soldering land size to match the appropriate thermal resistance
value.
4) For other design considerations, see the Toshiba website.
3.0
1.4
2.1
Unit: mm
1.4
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Maximum allowable lead temperature
Tℓ max (°C)
Forward voltage VF (V)
I
F
– V
F
Forward current IF
(A)
Average forward current IF (AV) (A)
P
F (AV)
– I
F (AV)
Average forward power dissipation
P
F (AV)
(W)
Average forward current IF (AV) (A)
M
aximum allowable ambi
ent temperature
Ta max (°C)
Average forward current IF (AV) (A)
Tℓ max – I
F (AV)
Ta max – I
F (AV)
Maximum
allowable lead temperature
Tℓ max (°C)
Average forward current IF (AV) (A)
Tℓ max – I
F (AV)
1 0 2 3 5 6
60
0
20
40
80
100
4 7 8
120
140
α = 120°
180°
270°
DC
1 0 2 3 5 6
60
0
20
40
80
100
4 7 8
120
140
1 0 2 3 5 6
60
0
20
40
80
100
4 7 8
120
140
0
1.2
0
0.4
0.8
1.8
1.6
2.4
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
0.1
0 1.4 0.2
1
10
100
0.4 0.6 0.8 1.0 1.2
α = 60°
120°
DC
125°C
75°C
Tj = 25°C
α = 60°
180°
270°
DC
120°
α = 60°
270°
DC
180°
120°
Device mounted on a ceramic board:
board size: 50 mm × 50 mm
Soldering land: size 2 mm × 2 mm
board thickness: 0.64 mm
Pulse test
180°
Conduction angle: α
360°
0°
α
Rectangular
waveform
I
F(AV)
Conduction angle: α
VR = 5 V
360°
0°
α
Rectangular
waveform
I
F(AV)
Conduction angle: α
VR = 5 V
360°
0°
α
Rectangular
waveform
I
F(AV)
Conduction angle: α
VR = 15 V
360°
0°
α
Rectangular
waveform
I
F(AV)
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Reverse current IR
(mA)
R
epetitive
peak forward current I
FRM
(A)
Reverse voltage VR (V)
C
j
–V
R
Junction capacitance Cj (pF)
Number of cycles
Repetitive peak forward current
Junction temperature Tj (°C)
I
R
– T
j
Reverse voltage VR (V)
P
R (AV)
– V
R
Average reverse power dissipation
P
R (AV)
(W)
Transient thermal res
istance rth (j-a) (°C/W)
rth (j-a) – t
Time (s)
0.5
0.001 0.01 0.1 1 10 100 1000
1
10
100
500
0.1
0 20 40 60 80 100 120 160
1
100
1000
140
10
4
8
12
16
0
0 10 20
30
24
28
20
100
1 10 100
1000
0
1 10 100
60
80
100
40
20
f = 1 MHz
Ta = 25°C
f = 50 Hz
Ta = 25°C
Pulse test
20 V
VR = 30 V
15 V
10 V
5 V
VR = 3 V
DC
300°
240°
180°
120°
α = 60°
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land size: 2.1 mm × 1.4 mm
board thickness: 1.6 mm
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land size: 6 mm × 6 mm
board thickness: 1.6 mm
Device mounted on a ceramic board:
board size: 50 mm × 50 mm
Soldering land: size 2 mm × 2 mm
board thickness: 0.64 mm
Conduction angle: α
Rectangular
waveform
360°
VR
0°
α
Tj = 125°C
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