CMLM0305
CMLM0305G*
Multi Discrete Module™
SURFACE MOUNT
N-CHANNEL MOSFET AND
LOW VF SILICON SCHOTTKY DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM0305 and
CMLM0305G are Multi Discrete Modules™ consisting
of a single N-Channel Enhancement-mode MOSFET
and a Low VF Schottky diode packaged in a space
saving PICOmini™ SOT-563 surface mount case. This
device is designed for small signal general purpose
applications where size and operational efficiency are
prime requirements.
MAXIMUM RATINGS - CASE: (TA=25°C) SYMBOL UNITS
Power Dissipation (Note 1) PD 350 mW
Power Dissipation (Note 2) PD 300 mW
Power Dissipation (Note 3) PD 150 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
MAXIMUM RATINGS - Q1: (TA=25°C) SYMBOL UNITS
Drain-Source Voltage VDS 50 V
Drain-Gate Voltage VDG 50 V
Gate-Source Voltage VGS 12 V
Continuous Drain Current ID 280 mA
Maximum Pulsed Drain Current IDM 1.5 A
MAXIMUM RATINGS - D1: (TA=25°C) SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 40 V
Continuous Forward Current IF 500 mA
Peak Repetitive Forward Current, tp≤1.0ms IFRM 3.5 A
Peak Forward Surge Current, tp=8.0ms IFSM 10 A
ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IGSSF, IGSSR V
GS=5.0V 100 nA
IGSSF, IGSSR VGS=10V 2.0 μA
IGSSF, IGSSR V
GS=12V 2.0 μA
IDSS V
DS=50V, VGS=0 50 nA
BVDSS V
GS=0, ID=10μA 50 V
VGS(th) VDS=VGS, ID=250μA 0.49 1.0 V
FEATURES:
• ESD protection up to 2kV
• Low rDS(on) Transistor (3Ω MAX @ VGS=1.8V)
• Low VF Schottky Diode (0.47V MAX @ 0.5A)
APPLICATIONS:
• DC / DC Converters
• Battery Powered Portable Equipment
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2
* Device is Halogen Free by design
MARKING CODES: CMLM0305: 5C3
CMLM0305G*: 5CG
SOT-563 CASE
R3 (18-January 2010)
www.centralsemi.com
CMLM0305
CMLM0305G*
Multi Discrete Module™
SURFACE MOUNT
N-CHANNEL MOSFET AND
LOW VF SILICON SCHOTTKY DIODE
ELECTRICAL CHARACTERISTICS - Q1 - Continued:
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
VSD V
GS=0, IS=115mA 1.4 V
rDS(ON) V
GS=1.8V, ID=50mA 1.6 3.0 Ω
rDS(ON) V
GS=2.5V, ID=50mA 1.3 2.5 Ω
rDS(ON) V
GS=5.0V, ID=50mA 1.1 2.0 Ω
gFS V
DS=10V, ID=200mA 200 mS
Crss VDS=25V, VGS=0, f=1.0MHz 5.0 pF
Ciss V
DS=25V, VGS=0, f=1.0MHz 50 pF
Coss V
DS=25V, VGS=0, f=1.0MHz 25 pF
ELECTRICAL CHARACTERISTICS - D1: (TA=25°C)
IR V
R=10V 20 μA
IR V
R=30V 100 μA
BVR I
R=500μA 40 V
VF I
F=100μA 0.13 V
VF I
F=1.0mA 0.21 V
VF I
F=10mA 0.27 V
VF I
F=100mA 0.35 V
VF I
F=500mA 0.47 V
CT V
R=1.0V, f=1.0MHz 50 pF
LEAD CODE:
1) Gate Q1
2) Source Q1
3) Cathode D1
4) Anode D1
5) Anode D1
6) Drain Q1
SOT-563 CASE - MECHANICAL OUTLINE
MARKING CODES:
CMLM0305: 5C3
CMLM0305G*: 5CG
* Device is Halogen Free by design
www.centralsemi.com
R3 (18-January 2010)