AO3162
600V,0.034A N-Channel MOSFET
General Description Product Summary
700V@150℃
I
D
(at V
GS
=10V) 0.034A
R
DS(ON)
(at V
GS
=10V) < 500Ω
Symbol
V
DS
The AO3162 is fabricated using an advanced high voltage
MOSFET process that is designed to deliver high levels
of performance and robustness in popular AC-DC
applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.
V
DS
V
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Maximum
Drain-Source Voltage 600
SOT23A
Top View Bottom View
D
G
S
G
S
D
G
D
S
DS
V
GS
I
DM
Peak diode recovery dv/dt dv/dt
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJL
Junction and Storage Temperature Range -50 to 150 °C
Power Dissipation
A
T
A
=70°C 1.39
0.89
V±30Gate-Source Voltage
T
A
=70°C A
I
D
T
A
=25°C 0.034
0.028
0.16Pulsed Drain Current
B
Continuous Drain
Current
A,F
V/ns5
P
D
T
A
=25°C
Maximum Junction-to-Ambient
A
R
θJA
Maximum Junction-to-Ambient
A
90
W
Max
Thermal Characteristics Units
°C/W70
Parameter Typ
Maximum Junction-to-Lead
C
°C/W
°C/W
63 125
80
100
SOT23A
Top View Bottom View
D
G
S
G
S
D
G
D
S
Rev0: May 2012
www.aosmd.com Page 1 of 5
AO3162
Symbol Min Typ Max Units
600 - -
- 700 -
BV
DSS
/∆TJ - 0.69 - V/
o
C
- - 1
- - 10
I
GSS
Gate-Body leakage current - - ±100 nΑ
V
GS(th)
Gate Threshold Voltage 2.8 3.2 4.1 V
R
DS(ON)
- 154 500 Ω
g
FS
- 0.045 - S
V
SD
- 0.74 1 V
I
S
Maximum Body-Diode Continuous Current - - 0.034 A
I
SM
- - 0.16 A
C
iss
- 4.2 6 pF
C
oss
- 0.45 0.6 pF
C
rss
- 0.05 0.07 pF
R
g
14 28 42 Ω
Q
g
- 0.1 0.15 nC
Q
gs
- 0.03 0.05 nC
Q
gd
- 0.05 0.08 nC
t
D(on)
- 13.8 20 ns
t
r
- 10 15 ns
t
D(off)
- 39.2 57 ns
t
f
13
19
ns
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
I
DSS
Zero Gate Voltage Drain Current V
DS
=600V, V
GS
=0V
Gate Drain Charge
V
DS
=5V,
I
D
=8µA
V
DS
=480V, T
J
=125°C
I
S
=0.016A,V
GS
=0V
V
DS
=40V, I
D
=0.016A
Forward Transconductance
DYNAMIC PARAMETERS
Diode Forward Voltage
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge V
GS
=10V, V
DS
=400V, I
D
=0.01A
Gate Source Charge
µA
V
Zero Gate Voltage Drain Current ID=250µA, VGS=0V
V
DS
=0V, V
GS
=±30V
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
BV
DSS
Static Drain-Source On-Resistance V
GS
=10V, I
D
=0.016A
Reverse Transfer Capacitance V
GS
=0V, V
DS
=25V, f=1MHz
SWITCHING PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime V
GS
=10V, V
DS
=300V, I
D
=0.01A,
R
G
=6Ω
Turn-Off Fall Time
t
f
13
19
ns
t
rr
- 105 160 ns
Q
rr
- 9.5 14.3 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=0.016A,dI/dt=100A/µs,V
DS
=300V
Body Diode Reverse Recovery Time I
F
=0.016A,dI/dt=100A/µs,V
DS
=300V
Turn-Off Fall Time
A: The value of R θJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in
any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
F. The current rating is based on the t ≤10s thermal resistance rating.
Rev0: May 2012 www.aosmd.com Page 2 of 5
AO3162
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0246810
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=4V
4.5V
10V
5V
0
0.005
0.01
0.015
0.02
0.025
0123456
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
V
DS
=40V
25°C
0
50
100
150
200
250
300
0 0.01 0.02 0.03 0.04
RDS(ON) (Ω
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
VGS=10V
0
0.5
1
1.5
2
2.5
-75 -25 25 75 125 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=10V
ID=0.016A
40
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
ID=30A
25
°
125
°
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0246810
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=4V
4.5V
10V
5V
0
0.005
0.01
0.015
0.02
0.025
0123456
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
V
DS
=40V
25°C
0
50
100
150
200
250
300
0 0.01 0.02 0.03 0.04
RDS(ON) (Ω
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
VGS=10V
0
0.5
1
1.5
2
2.5
-75 -25 25 75 125 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=10V
ID=0.016A
0.8
0.9
1
1.1
1.2
-100 -50 0 50 100 150 200
BVDSS (Normalized)
TJ(oC)
Figure 5: Break Down vs. Junction Temperature
Rev0: May 2012 www.aosmd.com Page 3 of 5
AO3162
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0.00 0.03 0.06 0.09 0.12
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
VDS=400V
ID=0.01A
0.01
0.10
1.00
10.00
100.00
0.1 1 10 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
0.0001
0.001
0.01
0.1
1
1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
1s
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
10s
0
20
40
60
80
100
120
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
TJ(Max)=150°C
TA=25°C
0
2
4
6
8
10
0.00 0.03 0.06 0.09 0.12
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
VDS=400V
ID=0.01A
0.01
0.10
1.00
10.00
100.00
0.1 1 10 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
0.0001
0.001
0.01
0.1
1
1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
1s
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
10s
0
20
40
60
80
100
120
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
TJ(Max)=150°C
TA=25°C
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse Ton T
P
D
Rev0: May 2012 www.aosmd.com Page 4 of 5
AO3162
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
-
+
VDC
L
Vgs
Vds
Id
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
AR
DSS
2
E = 1/2 LI
AR
AR
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dtI
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
AR
AR
Rev0: May 2012 www.aosmd.com Page 5 of 5