NTE3123
Phototransistor
Silicon NPN, Intermediate Acceptance,
High Sensitivity, Darlington
Features:
DEpoxy Resin Package
DCompact
DIntermediate Acceptance: ∆q = ±40° Typ
DVisible Light Cut–Off
Applications:
DVCRs
DOptoelectronic Switches
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO 35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Collector Voltage, VECO 6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Disspation, PC75mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, Topr –25° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –40° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature, TL
During Soldering, 1.4mm from surface of resin edge, 3sec +260°C. . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Current ICVCE = 2V, Ev = 2ȏx, Note 1 0.2 0.4 0.8 mA
Collector Dark Current ICBO VCE = 10V, Ee = 0 – – 10–6 A
Collector–Emitter Saturation Volt age VCE(sat) IC = 0.8mA, Ee = 1mW/cm2,
Note 1 – – 1.0 V
Peak Emission Wavelength λP– 860 – nm
Response Time (Rise) trVCE = 2V, IC = 5mA, RL = 100Ω– 400 2000 µs
Response Time (Fall) tf– 300 1500 µs
Half Intensity Angle ∆q–±40 – deg.
Note 1. Ee, Ev: Illuminance, irradiance by CIE standard light source A (tungsten lamp).
.118 (3.0)
.100
(2.54)
.059
(1.5)
.728
(18.5)
.118
(3.0)
.157
(4.0)
1.575
(40.0)
.020 (0.5)
.110 (2.8)
.045 (1.15)
Emitter Collector
.098 (2.5)
Dia
