INTERSIL 2N3954-2N3958 Monolithic Dual N-Channel JFET GENERAL, DESCRIPTION Matched FET pairs for differential amplifiers. This family of general purpose FETs is characterized for low and PIN CHIP medium frequency differential amplifiers requiring low CONFIGURATION TOPOGRAPHY offset voltage, drift, noise, and capacitance. 8017 4 023.00 x} FEATURES Offset Voltage <S5mV Drift<SuVv/C TO-71 I o > * @ Low Capacitance ~ Cie, = 4 pF Max sow a Spot Noise Figure = 0.5 dB Max | wre Superior Tracking Ability Saw, Sent @ Low Output Conductance os = 35 umho Max GATE 3x amie ABSOLUTE MAXIMUM RATINGS @ 25C (unless otherwise noted) ORDERING INFORMATION Any Case-To-Lead Voltage +100 V TO-71 WAFER DICE Gate-Drain or Gate-Source Voltage 50 V 2N3954 2N3954/W 2N3954/D Gate-To-Gate Volt +100 V Gate Current ue 50 mA &, 2Y Ge 8, 2N3954A | 2N3954A/W | 2N3954A/D Total Device Dissipation 85C (Each Side) 250 mW SM 2N3955 | 2N3955/W_| 2N3955/D piste Temperature | (Both Sides) 500 mit 2N3955A | 2N3955A/W | 2N3955A/D ower Derating (Each Side -86 mi , (Both Sides) 43m . *12N3956 | 2N3956/W__| 2N3956/D Storage Temperature Range -65C to +128C 2N3957 | 2N3957/W 2N3957/D Lead Temperature . 2N3958 2N3958/W 2N3958/D {1/16 from case for 10 seconds} 300C ELECTRICAL CHARACTERISTICS (25C unless otherwise notec!) 2N3954 | 213054 | 2N3955 | 2N3955A | 23956 | 2N2957 | 2N3958 PARAMETER tn [MAX [in [MAX [Min [MAx[ Min] Max|MIN | MAX [MIN [MAX|MIN | MAX|UNIT| TEST CONDITIONS ; Game Revere G = 100 =100 700 100 =100 160 100 pA [VGe> a0V, Gss ate Reverse Current 500 =500 =500 =500 =600 =) 7600 | nA |Vps-0 Ta = 128C Gate-Source Breakdo Vpg=0 BVass Voltege reece | so 80 -60 50 -50 -50 -50 / ion tua Gate-Source Cutoff . Vos = 20V. Vesiott) Voltage 1.0] -48 |-10] -45 |-1.0]-45 | -10] -45| 1.0] -45 |-10} -45 [10] 481 OP ag Gate-Source Forward Vos =o Vestn Voltage 2.0 20 20 2.0 2.0 2.0 2.0 Woot mA -42 -42 42 4.2 4.2 4.2 4.2 1p = 50 uA vi Gate-Source Volt Vps=20V Gs are-source vos 05] 40/05] -a0|-05|-40|-o4] -40|-05| -40{-05| -4.0[-05[ -4.0 ds Ip = 200 nA \ Gate Operating C -50 -50 -50 -50 ~50 -50 -501. pA |Vpsg= 20V, S ate Operating Current 250 260 -250 250 ~250 ~250 7260] nA lip =200WA [Ta = 125C Saturation Drain ' Vos = 20V. F J . . . . . . . .! os . mA Ipss cae o5| 50| a5] so0| 05] 50] 05] 5.0] 05] 5.0] 08] 50 5.0 Ven=0 Commen-Source Forward | 1000 | 3000 | 1000 | 3000 |1000 [3000 | 1000] 3000 | 1000 | 3000 |1000 | 3000 | 1000 | 3000 f= 1 kHz %s T 1000 1000 1000 1000 1000 1000 1000, , 1 = 200 MHz yumho / Sos Common-Source Output 36 35 35 35 35 36 35 f= 1kHe Conductance Vps = 20V, . . Vas 70 Ciss Common-Source Input 40 40 40 4.0 4.0 40 40 Capacitance Common Source Reverse . . . 1.2 1.2 1.2 1.2 F f= 1MHz Crs Transfer Capacitance 12 12 12 . p VoGz10V, Cago Drain-Gate Capacitance 15 15 15 15 18 18 15 lee Vos = 20V NF Fommon Source Spor 0s 05 05 05 05 05 05} aB | Vgs=0 f= 100 Hz loise Figure Rg = 10MQ Differential Gate Vps = 20V, 1 1 21 lig1-tgal Current 10 10 10 0 10 0 10) PA | y= 200 wa T= 128C Drain Saturation Current a Vos - 20V 0 | 0. 1.0|0.95| 1.0]095} 10/0.95{ 10/090] 1.0] 0: 1.0 'DSS1/!DSS2 Ratio 0.95} 1.0 | 0.95 0 | 0.95} 1.0 85 Vos -0 Differential Gate-Source - . 7 . 1 2 lVes1-VGsai Voltage 5.0 5.0 10.0 5.0 5 20 5 AVest-Vasol Gare Sours Differential 08 a4 2.0 12 40 6.0 0} ly = 20v, [T= 28C to -56C 3 oltage Change wi > SINGS? Temperature 1.0 0.5 25 15 5.0 75 10.0 Ip = 200 HA | T = 25C to 126C 9fs1/9fs2 Transconductance Ratio | 0.97 1.0 | 0.97 1.0]0.97] 1.0] 0.95 1.0] 0.95 1.0] 0.90 1.0 | 0.85 1.0 f=1kHz 1-59