© 2016 IXYS CORPORATION, All Rights Reserved DS100694A(03/16)
X2-Class HiPerFETTM
Power MOSFET
IXFT80N65X2HV VDSS = 650V
ID25 = 80A
RDS(on)
38m
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 650 V
VGS(th) VDS = VGS, ID = 4mA 3.5 5.0 V
IGSS VGS = 30V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 50 A
TJ = 125C 3 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 38 m
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 650 V
VDGR TJ= 25C to 150C, RGS = 1M650 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C80A
IDM TC= 25C, Pulse Width Limited by TJM 160 A
IATC= 25C20A
EAS TC= 25C3J
dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns
PDTC= 25C 890 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TL Maximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
Weight 4 g
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features
High Voltage Package
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
TO-268HV (IXFT)
G
D (Tab)
S
G = Gate D = Drain
S = Source Tab = Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT80N65X2HV
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V 80 A
ISM Repetitive, pulse Width Limited by TJM 320 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 200 ns
QRM 1.7 μC
IRM 16.7 A
IF = 40A, -di/dt = 100A/μs
VR = 100V
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 33 55 S
RGi Gate Input Resistance 0.6
Ciss 8300 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 5010 pF
Crss 1.6 pF
Co(er) 280 pF
Co(tr) 1160 pF
td(on) 32 ns
tr 24 ns
td(off) 70 ns
tf 11 ns
Qg(on) 140 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 50 nC
Qgd 40 nC
RthJC 0.14 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3 (External)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
© 2016 IXYS CORPORATION, All Rights Reserved
Fig. 1. Output Characteristics @ TJ = 25ºC
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5 3 3.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
7V
5V
Fig. 3. Output Characteristics @ TJ = 125ºC
0
10
20
30
40
50
60
70
80
012345678
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
4V
Fig. 4. RDS(on) Normalized to ID = 40A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
3.8
-50 -25 0 25 50 75 100 125 150
T
J
- D e grees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 40A
I
D
= 80A
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
0
20
40
60
80
100
120
140
160
180
200
0 5 10 15 20 25
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
9V
5V
Fig. 5 . R
DS(on)
No rmalized to I
D
= 40A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 20 40 60 80 100 120 140 160 180 200
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
- D egrees Cent igra de
BV
DSS
/ V
GS(th)
- Normalized
BV
DSS
V
GS(th)
IXFT80N65X2HV
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT80N65X2HV
Fig. 8. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 7. Maximum Drain Current vs .
Case Temperature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Cent igrade
I
D
- Amperes
Fig. 9. Transconductance
0
10
20
30
40
50
60
70
80
90
0 102030405060708090100
I
D
- Am peres
g
f s
- Si em ens
T
J
= - 40º C
125ºC
25ºC
Fig. 10. Forward Voltage Drop of Intrinsic Diode
0
20
40
60
80
100
120
140
160
180
200
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 11. Gate Charge
0
2
4
6
8
10
0 20406080100120140
Q
G
- NanoCoulombs
V
GS
- Volts
VDS
= 325V
I D = 40A
I G = 10mA
Fig. 12. Capacitance
1
10
100
1,000
10,000
100,000
1 10 100 1000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
© 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: F_80N65X2(Z8-S602) 11-19-15
Fig. 15. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 15. Maximum Transient Thermal Impedance
aaaaa
0.3
Fig. 14. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
10 100 1,000
VDS - Volts
ID - Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
100µs
R
DS(
on
)
Limit
1ms
10ms
Fig. 13. Output Ca pacitance Stored Energy
0
10
20
30
40
50
60
0 100 200 300 400 500 600
VDS - Volts
EOSS - MicroJoules
IXFT80N65X2HV
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT80N65X2HV
PINS:
1 - Gate 2 - Source
3 - Drain
TO-268HV Outline
