2N3700
HIGH VOL T AGE, MEDIUM POWER, NPN
TRANSISTOR FOR HIGH RELIABILITY
APPLICATIONS
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• JEDEC TO-18 METAL PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• HIGH VOLTAGE
APPLICATIONS:
Hermetically sealed 2N3700 for high reliability
applications requiring small size and low
weight devices.
VCBO Collector – Base Voltage (IE= 0)
VCEO Collector – Emitter Voltage (IB= 0)
VEBO Emitter – Base Voltage (IC= 0)
ICCollector Current
PDTotal Power Dissipation (Tamb ≤25°C)
(Tcase ≤ 25°C)
(Tcase ≤ 100°C)
Rja Ther mal Resistance Junction to Ambient
Tstg Storage Temperature
140V
80V
7V
1A
0.5W
1.8W
1W
350°C/W
–65 to 200°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
TO-18 (TO-206AA)
METAL PACKAGE
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5266
Issue 1
!
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5
.
3
3
(
0
.
2
1
0
)
4
.
3
2
(
0
.
1
7
0
)
1
2
.
7
(
0
.
5
0
0
)
m
i
n
.
5.33 (0.210)
4.32 (0.170)
12.7 (0.500)
min.
PIN 1 – Emitter
Underside View
PIN 2 – Base PIN 3 – Collector
Parameter Test Conditions Min. Typ. Max. Unit
nA
µA
nA
V
V
V
-
-
-
-
-
-
V
V
10
10
10
0.2
0.5
1.1
50
90
100 300
50
15
40
140
7
VCB = 90V
VCB = 90V Tamb = 150°C
VEB = 5V
IC= 150mA IB= 15mA
IC= 500mA IB= 50mA
IC= 150mA IB= 15mA
IC= 0.1mA
IC= 10mA
IC= 150mA
IC= 500mA
IC= 1A
IC= 150mA Tamb = -55°C
IC= 100µA
IE= 100µA
ICBO Collector – Base Cut-off Current
(IE= 0)
IEBO Emitter Cut-off Current (IC= 0)
VCE(sat)* Collector – Emitter Saturation Voltage
VBE(sat)* Base – Emitter Saturation Voltage
hFE* DC Current Gain (VCE = 10V)
V(BR)CBO Collector-base Breakdown Voltage
(IE= 0)
V(BR)EBO Emitter-base BreakdownVoltage
(IC= 0)
2N3700
Parameter Test Conditions Min. Typ. Max. Unit
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
fTTransition Frequency
hfe Small Signal Current Gain
CEBO Emitter-base Capacitance
CCBO Collector-base Capacitance
rbb’Cb’c Feedback time constant
IC= 50mA VCE = 10V f = 20MHz
IC= 1mA VCE = 5V f = 1kHz
IC= 0 VEB = 0.5V f = 1MHz
IC= 0 VCB = 10V f = 1MHz
IC= 10mA VCB = 10V f = 4MHz
100
80 400
60
12
25 400
MHz
-
pF
pF
ps
* Pulse test tp = 300µs , δ ≤ 1%
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5266
Issue 1