StrongIRFET™
IRF7480MTRPbF
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
Benefits
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Lead-Free, RoHS Compliant
Base part number Package Type
Standard Pack
Form Quantity
IRF7480MPbF DirectFET® ME Tape and Reel 4800 IRF7480MTRPbF
Orderable Part Number
VDSS 40V
RDS(on) typ. 0.95m
max 1.20m
ID (Silicon Limited) 217A
ID (double-sided cooling) 330A
Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature
DirectFET® ISOMETRIC
ME
DirectFET® N-Channel Power MOSFET
1 2016-5-4
DD
S
GSS
SS
S
46810 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
0.5
1.0
1.5
2.0
2.5
3.0
RDS(on)
, Drain-to -Source On Resistance (m
)
ID = 132A
TJ = 25°C
TJ = 125°C
25 50 75 100 125 150
TC , Case Temperature (°C)
0
25
50
75
100
125
150
175
200
225
ID, Drain Current (A)
IRF7480MTRPbF
2 2016-5-4
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Used double sided cooling , mounting pad with large heatsink.
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 217
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 137A
IDM Pulsed Drain Current 868
PD @TC = 25°C Maximum Power Dissipation 96 W
Linear Derating Factor 0.77 W/°C
VGS Gate-to-Source Voltage ± 20 V
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy 81
EAS (Thermally limited) Single Pulse Avalanche Energy 206
IAR Avalanche Current See Fig.15,16, 23a, 23b A
EAR Repetitive Avalanche Energy mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJA Junction-to-Ambient ––– 45
°C/W
RJA Junction-to-Ambient 12.5 –––
RJA Junction-to-Ambient 20 –––
RJC Junction-to-Case ––– 1.3
RJ-PCB Junction-to-PCB Mounted 0.75 –––
mJ
ID @ TC (top)= 25°C
TC (bottom)= 25°C Continuous Drain Current, VGS @ 10V (double-sided cooling) 330
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 30 ––– mV/°C Reference to 25°C, ID = 1.0mA
RDS(on) Static Drain-to-Source On-Resistance ––– 0.95 1.20 m VGS = 10V, ID = 132A
––– 1.60 –––VGS = 6.0V, ID = 66A
VGS(th) Gate Threshold Voltage 2.1 3.0 3.9 V VDS = VGS, ID = 150µA
IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 40V, VGS = 0V
––– ––– 150 VDS = 40V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
RG Internal Gate Resistance ––– 0.81 –––
nA
TC measured with thermocouple mounted to top (Drain) of part.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with small clip
heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with
small clip heatsink (still air)
IRF7480MTRPbF
3 2016-5-4
D
S
G
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 370 ––– ––– S VDS = 10V, ID = 132A
Qg Total Gate Charge ––– 123 185
nC
ID = 132A
Qgs Gate-to-Source Charge ––– 31 ––– VDS =20V
Qgd Gate-to-Drain ("Miller") Charge ––– 44 ––– VGS = 10V
Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 79 ––– ID = 132A, VDS =0V, VGS = 10V
td(on) Turn-On Delay Time ––– 21 –––
ns
VDD = 20V
tr Rise Time ––– 70 ––– ID = 30A
td(off) Turn-Off Delay Time ––– 68 ––– RG = 2.7
tf Fall Time ––– 58 ––– VGS = 10V
Ciss Input Capacitance ––– 6680 –––
pF
VGS = 0V
Coss Output Capacitance ––– 1035 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 700 ––– ƒ = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1240 ––– VGS = 0V, VDS = 0V to 32V
Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 1515 ––– VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 87
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 868 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ= 25°C,IS =132A, VGS = 0V
dv/dt Peak Diode Recovery ––– 2.4 ––– V/ns
TJ =150°C,IS =132A,
VDS = 40V
trr Reverse Recovery Time ––– 44 ––– ns TJ = 25° C VR = 34V,
––– 46 ––– TJ = 125°C IF = 132A
Qrr Reverse Recovery Charge ––– 56 ––– TJ = 25°C di/dt = 100A/µs
––– 63 ––– TJ = 125°C
IRRM Reverse Recovery Current ––– 2.1 ––– A TJ = 25°C
nC
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.009mH, RG = 50, IAS = 132A, VGS =10V.
ISD ≤ 132A, di/dt ≤ 920A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note # AN-994. http://www.irf.com/technical-info/appnotes/an-994.pdf
R
is measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 20A, VGS =10V.
IRF7480MTRPbF
4 2016-5-4
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
0 20 40 60 80 100 120 140 160
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 32V
VDS= 20V
ID= 132A
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
60µs PULSE WIDTH
Tj = 25°C
4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
60µs PULSE WIDTH
Tj = 150°C
4.5V
2345678
VGS, Gate-to-Source Voltage (V)
1.0
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
VDS = 10V
60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.6
0.80.8
1.01.0
1.21.2
1.41.4
1.61.6
1.8
0.6
0.8
1.0
1.2
1.4
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 132A
VGS = 10V
IRF7480MTRPbF
5 2016-5-4
Fig 10. Maximum Safe Operating Area
Fig 11. Drain-to-Source Breakdown Voltage
Fig 9. Typical Source-Drain Diode Forward Voltage
-5 0 5 10 15 20 25 30 35 40
VDS, Drain-to-Source Voltage (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Energy (µJ)
Fig 12. Typical Coss Stored Energy
Fig 13. Typical On-Resistance vs. Drain Current
020 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
RDS(on), Drain-to -Source On Resistance (
m)
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
0.2 0.4 0.6 0.8 1.0
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Temperature ( °C )
40
41
42
43
44
45
46
47
48
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 1.0mA
0.1 1 10
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
1msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
DC
IRF7480MTRPbF
6 2016-5-4
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 16. Maximum Avalanche Energy vs. Temperature
Fig 15. Avalanche Current vs. Pulse Width
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
t
av = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Z
thJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
I
av = 2T/ [1.3·BV·Zth]
E
AS (AR) = PD (ave)·tav
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z
thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 132A
IRF7480MTRPbF
7 2016-5-4
Fig 17. Threshold Voltage vs. Temperature
Fig 21. Typical Stored Charge vs. dif/dt
Fig 18. Typical Recovery Current vs. dif/dt
100 200 300 400 500 600 700
diF /dt (A/µs)
2
3
4
5
6
7
8
9
IRRM (A)
IF = 88A
VR = 34V
TJ = 25°C
TJ = 125°C
100 200 300 400 500 600 700
diF /dt (A/µs)
2
3
4
5
6
7
8
9
IRRM (A)
IF = 132A
VR = 34V
TJ = 25°C
TJ = 125°C
100 200 300 400 500 600 700
diF /dt (A/µs)
80
100
120
140
160
180
200
QRR (nC)
IF = 88A
VR = 34V
TJ = 25°C
TJ = 125°C
100 200 300 400 500 600 700
diF /dt (A/µs)
40
80
120
160
200
QRR (nC)
IF = 132A
VR = 34V
TJ = 25°C
TJ = 125°C
Fig 20. Typical Stored Charge vs. dif/dt
Fig 19. Typical Recovery Current vs. dif/dt
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
VGS(th), Gate threshold Voltage (V)
ID = 150µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
IRF7480MTRPbF
8 2016-5-4
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 23a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 25a. Gate Charge Test Circuit
tp
V
(BR)DSS
I
AS
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 25b. Gate Charge Waveform
VDD
IRF7480MTRPbF
9 2016-5-4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
DirectFET® Board Footprint, ME Outline
(Medium Size Can, E-Designation)
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET®.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
G
DS
DD
D
S
SS
S
IRF7480MTRPbF
10 2016-5-4
DirectFET® Outline Dimension, ME Outline
(Medium Size Can, E-Designation)
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET®. This includes
all recommendations for stencil and substrate designs.
DirectFET® Part Marking
Dimensions are shown in
millimeters (inches)
CODE
A
B
C
D
E
F
G
H
J
L
0.017
0.083
0.156
0.044
0.018
0.024
MAX
0.250
0.38
2.08
3.85
1.08
0.35
0.58
MIN
6.25
4.80
0.42
2.12
3.95
1.12
0.45
0.62
MAX
6.35
5.05
0.015
0.082
0.152
0.043
0.023
0.014
MIN
0.189
0.246
METRIC IMPERIAL
DIMENSIONS
0.93 0.97
1.28 1.32
0.0380.037
0.0520.050
J1 0.0230.620.58 0.024
0.0350.920.88 0.036K
0.199
L1 0.1443.63 3.67 0.143
M
P
0.028
0.007
0.59
0.08
0.70
0.17
0.023
0.003
N0.02 0.08 0.0008 0.003
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
GATE MARKING
LOGO
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF7480MTRPbF
11 2016-5-4
DirectFET® Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF7480MTRPBF). For 1000 parts on 7"
reel, order IRF7480MTR1PBF
REEL DIMENSIONS
MAX
N.C
N.C
0.520
N.C
N.C
0.724
0.567
0.606
IMPERIAL
MIN
330.0
20.2
12.8
1.5
100.0
N.C
12.4
11.9
STANDARD OPTION (QTY 4800)
CODE
A
B
C
D
E
F
G
H
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
12.992
0.795
0.504
0.059
3.937
N.C
0.488
0.469
METRIC
MIN
6.9
0.75
0.53
0.059
2.31
N.C
0.47
0.47
TR1 OPTION (QTY 1000)
MAX
N.C
N.C
12.8
N.C
N.C
13.50
12.01
12.01
MIN
177.77
19.06
13.5
1.5
58.72
N.C
11.9
11.9
METRIC
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
IMPERIAL
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING
DIMENSIONS IN MM CODE
A
B
C
D
E
F
G
H
IMPERIAL
MIN
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
1.60
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
METRIC
DIMENSIONS
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
0.063
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF7480MTRPbF
12 2016-5-4
Qualification Information†
Qualification Level
Industrial *
(per JEDEC JESD47F†† guidelines)
Moisture Sensitivity Level DFET 1.5
MSL1
(per JEDEC J-STD-020D††)
RoHS Compliant Yes
† Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
* Industrial qualification standards except autoclave test conditions.
Revision History
Date Comments
11/07/2014
Updated EAS (L =1mH) = 206mJ on page 2
Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 20A, VGS =10V” on page 3
Updated RJA from “60°C/W” to “45°C/W” on page 2.
05/14/2015 Updated registered trademark from DirectFETTM to DirectFET® on page 1,9 and 10.
05/04/2016 Updated datasheet with corporate template.
Added ID (double- sided cooling) = 300A on pages1 and 2.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
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