SMCJ5V0(C)A – SMCJ170(C)A
Taiwan Semiconductor
1 Version: B1910
1500W Transient Voltage Suppressor
FEATURES
● Glass passivated junction
● 1500W peak pulse power capability
on 10/1000µs waveform
● Excellent clamping capability
● Low-Incremental surge resistance
● Fast response time: Typically less than 1.0ps from 0V
to BV minimum for unidirectional and 5.0ns for bidirectional
● Typical IR less than 1μA above 10V
● UL certificate #E258596
● UL94V-0 flammability classification
SMC/DO-214AB
Band denotes cathode on unidirectional devices only.
No band on bi-directional devices. Bi-directional types
have CA suffix where electrical chatacteristics apply in
both directions suitable for bi-directional applications.
ABSOLUTE MAXIMUM RATINGS
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation tp=1ms
PPPM 1500 W
Peak pulse current on 10/1000µs waveform IPPM see table A
Non-Repetitive Peak Forward Surge Current
Superimposed on Rated Load (JEDEC Method)(1) IFSM 200 A
Junction temperature TJ -55 to +150 °C
Storage temperature TSTG -55 to +150 °C
Note:
1. Measured on 8.3ms single half-sine wave; duty cycle = 4 pulses per minute maximum.
SMCJ5V0(C)A – SMCJ170(C)A
Taiwan Semiconductor
2 Version: B1910
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
Uni-directional
Bi-directional (C)
Device
Part
Marking(2)
Reverse
Stand-Off
Voltage
VRWM
(V)
Breakdown
Voltage
VBR
(V)
Test
Current
IT
(mA)
Clamping
Voltage
at IPPM
VC(V)
Peak Pulse
Current
IPPM (A)
Reverse
Leakage
Current
at VRWM
IR (μA) (3)
Min. Max.
SMCJ5V0(C)A GDE 5.0 6.40 7.00 10 9.2 163.0 1000
SMCJ6V0(C)A GDG 6.0 6.67 7.37 10 10.3 145.6 1000
SMCJ6V5(C)A GDK 6.5 7.22 7.98 10 11.2 133.9 500
SMCJ7V0(C)A GDM 7.0 7.78 8.60 10 12.0 125.0 200
SMCJ7V5(C)A GDP 7.5 8.33 9.21 1 12.9 116.3 100
SMCJ8V0(C)A GDR 8.0 8.89 9.83 1 13.6 110.3 50
SMCJ8V5(C)A GDT 8.5 9.44 10.4 1 14.4 104.2 20
SMCJ9V0(C)A GDV 9.0 10.0 11.1 1 15.4 97.4 10
SMCJ10(C)A GDX 10 11.1 12.3 1 17.0 88.2 5
SMCJ11(C)A GDZ 11 12.2 13.5 1 18.2 82.4 5
SMCJ12(C)A GEE 12 13.3 14.7 1 19.9 75.3 5
SMCJ13(C)A GEG 13 14.4 15.9 1 21.5 69.8 5
SMCJ14(C)A GEK 14 15.6 17.2 1 23.2 64.7 5
SMCJ15(C)A GEM 15 16.7 18.5 1 24.4 61.5 5
SMCJ16(C)A GEP 16 17.8 19.7 1 26.0 57.7 5
SMCJ17(C)A GER 17 18.9 20.9 1 27.6 54.3 5
SMCJ18(C)A GET 18 20.0 22.1 1 29.2 51.4 5
SMCJ20(C)A GEV 20 22.2 24.5 1 32.4 46.3 5
SMCJ22(C)A GEX 22 24.4 26.9 1 35.5 42.3 5
SMCJ24(C)A GEZ 24 26.7 29.5 1 38.9 38.6 5
SMCJ26(C)A GFE 26 28.9 31.9 1 42.1 35.6 5
SMCJ28(C)A GFG 28 31.1 34.4 1 45.4 33.0 5
SMCJ30(C)A GFK 30 33.3 36.8 1 48.4 31.0 5
SMCJ33(C)A GFM 33 36.7 40.6 1 53.3 28.1 5
SMCJ36(C)A GFP 36 40.0 44.2 1 58.1 25.8 5
SMCJ40(C)A GFR 40 44.4 49.1 1 64.5 23.3 5
SMCJ43(C)A GFT 43 47.8 52.8 1 69.4 21.6 5
SMCJ45(C)A GFV 45 50.0 55.3 1 72.7 20.6 5
SMCJ48(C)A GFX 48 53.3 58.9 1 77.4 19.4 5
SMCJ51(C)A GFZ 51 56.7 62.7 1 82.4 18.2 5
SMCJ54(C)A GGE 54 60.0 66.3 1 87.1 17.2 5
SMCJ58(C)A GGG 58 64.4 71.2 1 93.6 16.0 5
SMCJ60(C)A GGK 60 66.7 73.7 1 96.8 15.5 5
SMCJ64(C)A GGM 64 71.1 78.6 1 103.0 14.6 5
SMCJ70(C)A GGP 70 77.8 86.0 1 113.0 13.3 5
SMCJ75(C)A GGR 75 83.3 92.1 1 121.0 12.4 5
SMCJ78(C)A GGT 78 86.7 95.8 1 126.0 11.9 5
SMCJ5V0(C)A – SMCJ170(C)A
Taiwan Semiconductor
3 Version: B1910
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
Uni-directional
Bi-directional (C)
Device
Part
Marking(2)
Reverse
Stand-Off
Voltage
VRWM
(V)
Breakdown
Voltage
VBR
(V)
Test
Current
IT
(mA)
Clamping
Voltage
at IPPM
VC(V)
Peak Pulse
Current
IPPM (A)
Reverse
Leakage
Current
at VRWM
IR (μA) (3)
Min. Max.
SMCJ85(C)A GGV 85 94.4 104.0 1 137.0 10.9 5
SMCJ90(C)A GGX 90 100.0 111.0 1 146.0 10.3 5
SMCJ100(C)A GGZ 100 111.0 123.0 1 162.0 9.3 5
SMCJ110(C)A GHE 110 122.0 135.0 1 177.0 8.5 5
SMCJ120(C)A GHG 120 133.0 147.0 1 193.0 7.8 5
SMCJ130(C)A GHK 130 144.0 159.0 1 209.0 7.2 5
SMCJ150(C)A GHM 150 167.0 185.0 1 243.0 6.2 5
SMCJ160(C)A GHP 160 178.0 197.0 1 259.0 5.8 5
SMCJ170(C)A GHR 170 189.0 209.0 1 275.0 5.5 5
Notes:
2. Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices.
3. For bidirectional parts with VRWM < 10 V, the IR max limit is doubled.
SMCJ5V0(C)A – SMCJ170(C)A
Taiwan Semiconductor
4 Version: B1910
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig1. Peak Pulse Power rating Curve
Fig2. Pulse Derating Curve
Fig3. Pulse Waveform
Fig4. Junction Capacitance
0
25
50
75
100
125
0 25 50 75 100 125 150 175 200
PULSE POWER (%)
TA, AMBIENT TEMPERATURE (°C)
10
100
1000
10000
1 10 100 1000
CAPACITANCE (pF)
REVERSE VOLTAGE (V)
f=1.0MHz
Vsig=50mVp-p
Measured at
Zero Bias
Measured at
Stand-Off
Voltage (V)
0
20
40
60
80
100
120
140
0 0.5 1 1.5 2 2.5 3
IPPM, PEAK PULSE CURRENT (%)
t, TIME (ms)
Peak value
I
PPM
Rise time tr=10μs to 100%
Half value-IPPM/2
Pulse width(td) is defined
as the point where the peak
current decays to 50% of IPPM
10/1000μs, waveform
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10
PULSE POWER, KW
PULSE WIDTH, (ms)
SMCJ5V0(C)A – SMCJ170(C)A
Taiwan Semiconductor
5 Version: B1910
Fig5. Non-repetitive surge current
10
100
1000
1 10 100
PEAK FORWARD SURGE CURRENT(A)
NUMBER OF CYCLES at 60Hz
Unidirectional only
8.3ms single half sine-wave
JEDEC method
SMCJ5V0(C)A – SMCJ170(C)A
Taiwan Semiconductor
6 Version: B1910
PACKAGE OUTLINE DIMENSIONS
DO-214AB (SMC)
SUGGESTED PAD LAYOUT
DIM. Unit (mm)
Min Max
A 3.27 2.75
B 6.60 7.15
C 5.55 6.25
D - 2.65
E 0.75 1.60
F 7.75 8.15
G 0.05 0.203
H 0.15 0.41
Symbol Unit (mm)
A 2.6
B 3.2
C 7.2
SMCJ5V0(C)A – SMCJ170(C)A
Taiwan Semiconductor
7 Version: B1910
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