STFW6N120K3 STP6N120K3, STW6N120K3 N-channel 1200 V, 1.95 , 6 A, TO-3PF, TO-220, TO-247 Zener-protected SuperMESH3TM Power MOSFET Features Type VDSS RDS(on) max ID Pw STFW6N120K3 1200 V < 2.4 6A 63 STP6N120K3 1200 V < 2.4 6A 150 W STW6N120K3 1200 V < 2.4 6A 150 W 3 100% avalanche tested Extremely large avalanche performance Very low intrinsic capacitances Zener-protected 3 1 TO-220 Application 2 TO-3PF Gate charge minimized 1 Figure 1. 2 2 3 1 TO-247 Internal schematic diagram Switching applications Description These devices are an N-channel SuperMESHTM Power MOSFET obtained through optimization of ST's well-established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special attention has been taken to ensure a very good dynamic performance coupled with a very large avalanche capability for the most demanding application. Table 1. Device summary Order codes Marking Package STFW6N120K3 STP6N120K3 TO-3PF 6N120K3 STW6N120K3 August 2010 Packaging TO-220 Tube TO-247 Doc ID 15572 Rev 2 1/15 www.st.com 15 Contents STFW6N120K3, STP6N120K3, STW6N120K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/15 .............................................. 6 Doc ID 15572 Rev 2 STFW6N120K3, STP6N120K3, STW6N120K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-3PF TO-220 TO-247 Gate- source voltage 30 V ID Drain current (continuous) at TC = 25 C 6 A ID Drain current (continuous) at TC = 100 C 3.8 A Drain current (pulsed) 20 A VGS IDM (1) PTOT Power dissipation at TC = 25 C IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) EAS VESD(G-S) 150 150 W 7 A Single pulse avalanche energy (starting TJ = 25 C, ID = IAR, VDD = 50 V) 180 mJ G-S ESD (HBM-C = 100 pF, R = 1.5 k) 6000 V VISO Insulation withstand voltage (AC) Tstg Storage temperature TJ 63 3500 - - -55 to 150 V C Operating junction temperature 1. Pulse width limited by safe operating area Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case Rthj-pcb Thermal resistance junction to pcb minimum footprint Rthj-amb Thermal resistance junction-ambient max TJ Maximum lead temperature for soldering purpose Doc ID 15572 Rev 2 TO-3PF TO-220 TO-247 Unit 1.98 0.83 C/W - - - C/W 50 62.5 50 C/W 300 C 3/15 Electrical characteristics 2 STFW6N120K3, STP6N120K3, STW6N120K3 Electrical characteristics (TC = 25 C unless otherwise specified) Table 4. Symbol V(BR)DSS On / off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 1200 - - V IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TJ = 125 C - - 1 50 A A IGSS Gate-body leakage current (VDS = 0) - - 10 A VGS = 20 V, VDS = 0 VGS(th) Gate threshold voltage VDS = VGS, ID = 100 A 3 4 5 V RDS(on) Static drain-source on resistance - 1.95 2.4 Min. Typ. Max. Unit Table 5. Symbol VGS = 10 V, ID = 2.5 A Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 1050 90 1 - pF pF pF Co(tr) (1) Equivalent capacitance time related VGS = 0, VDS = 0 to 960 V - 40 - pF Co(er) (2) Equivalent capacitance energy related VGS = 0, VDS = 0 to 960 V - 25 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 3 - Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 960 V, ID = 7.2 A, VGS = 10 V (see Figure 20) - 34 7 23 - nC nC nC Ciss Coss Crss 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS. 4/15 Doc ID 15572 Rev 2 STFW6N120K3, STP6N120K3, STW6N120K3 Table 6. Symbol td(on) tr td(off) tf Table 7. Electrical characteristics Switching times on/off Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 600 V, ID = 3.6 A, RG = 4.7 , VGS = 10 V (see Figure 19) Min. Typ. Max Unit - 30 12 58 32 - ns ns ns ns Min. Typ. - - 6 20 A A Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 5 A, VGS = 0 - -- 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7.2 A, di/dt = 100 A/s VDD = 60 V TJ = 25 C (see Figure 24) - 580 7 25 - ns C A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7.2 A, di/dt = 100 A/s VDD = 60 V, TJ = 150 C (see Figure 24) - 840 9 22 - ns C A Min. Typ. 30 - trr Qrr IRRM trr Qrr IRRM Test conditions Max. Unit 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5% Table 8. Symbol BVGSO Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage IGS = 1 mA (open drain) Max. Unit - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 15572 Rev 2 5/15 Electrical characteristics STFW6N120K3, STP6N120K3, STW6N120K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-3PF Figure 3. !-V )$ ! TO3PF K =0.5 0.2 O N $3 PE RA ITE TION D BY IN T M HIS AX A 2 REA IS ,I / S S MS M Thermal impedance for TO-3PF 0.1 -1 10 0.05 0.02 MS 4J # 4C # Figure 4. -4 10 -3 10 -2 10 -1 10 tp (s) Figure 5. Thermal impedance for TO-220 Figure 7. Thermal impedance for TO-247 is n) S( o pe ra ite tion d by in t m his ax a RD rea 10s 100s 1ms O Li m 10ms Tj=150C Tc=25C 0.1 Sinlge pulse 0.01 0.1 10 1 Figure 6. 100 1000 VDS(V) Safe operating area for TO-247 AM07309v1 ID (A) on ) 10s 100s 1ms S( pe ra ite tion d by in t m his ax a RD rea is 10 O Li m 10ms Tj=150C Tc=25C 0.1 6/15 10 -5 10 AM07308v1 10 0.01 0.1 -2 6$36 Safe operating area for TO-220 ID (A) 1 Single pulse 3INLGE PULSE 1 0.01 Sinlge pulse 1 10 100 1000 VDS(V) Doc ID 15572 Rev 2 STFW6N120K3, STP6N120K3, STW6N120K3 Figure 8. Output characteristics )$ ! Electrical characteristics Figure 9. !-V 6'36 Transfer characteristics !-V )$ ! 6 6$3 6 6 6 6$36 Figure 10. Normalized BVDSS vs temperature AM07911v1 BVDSS (norm) 1.10 6'36 Figure 11. Static drain-source on resistance AM07909v1 RDS(on) () 2.6 VGS=10V 1.05 2.2 1.00 1.8 0.95 1.4 0.90 0.85 -50 0 50 100 1 0.5 TJ(C) Figure 12. Output capacitance stored energy !-V %OSS * 1.5 2.5 3.5 4.5 ID(A) Figure 13. Capacitance variations AM07912v1 C (pF) 10000 Ciss 1000 100 Coss 10 1 Crss 6$36 0.1 0.1 Doc ID 15572 Rev 2 1 10 100 VDS(V) 7/15 Electrical characteristics STFW6N120K3, STP6N120K3, STW6N120K3 Figure 14. Gate charge vs gate-source voltage Figure 15. Normalized on resistance vs temperature !-V 6'3 6 RDS(on) () 2.5 6$$6 6'3 )$! AM079071v1 VGS=10V 6$3 2 1.5 1 0.5 1GN# Figure 16. Normalized gate threshold voltage vs temperature !-V 6'3TH NORM 0 -75 25 -25 75 125 TJ(C) Figure 17. Maximum avalanche energy vs temperature !-V %!3 M* 4* # Figure 18. Source-drain diode forward characteristics 63$ 6 !-V 4* # 4* # 4* # 8/15 )3$! Doc ID 15572 Rev 2 4* # STFW6N120K3, STP6N120K3, STW6N120K3 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 F 2200 RL F VGS IG=CONST VDD 100 Vi=20V=VGMAX VD RG 2200 F D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100H S 3.3 F B 25 1000 F D VDD 2200 F 3.3 F VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 23. Unclamped inductive waveform AM01471v1 Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 15572 Rev 2 10% AM01473v1 9/15 Package mechanical data 4 STFW6N120K3, STP6N120K3, STW6N120K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 Doc ID 15572 Rev 2 STFW6N120K3, STP6N120K3, STW6N120K3 Package mechanical data TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S Doc ID 15572 Rev 2 11/15 Package mechanical data STFW6N120K3, STP6N120K3, STW6N120K3 TO-3PF mechanical data DIM. A C D D1 E F F2 G G1 H L L2 L3 L4 L5 L6 L7 N R Dia mm. typ min. 5.30 2.80 3.10 1.80 0.80 0.65 1.80 10.30 max. 5.70 3.20 3.50 2.20 1.10 0.95 2.20 11.50 5.45 15.30 9.80 22.80 26.30 43.20 4.30 24.30 14.60 1.80 3.80 3.40 10 15.70 10.20 23.20 26.70 44.40 4.70 24.70 15 2.20 4.20 3.80 7627132_C 12/15 Doc ID 15572 Rev 2 STFW6N120K3, STP6N120K3, STW6N120K3 Package mechanical data TO-247 mechanical data mm. Dim. A Min. 4.85 Typ A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e Max . 5.15 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 oP 3.55 3.65 oR 4.50 5.50 S 5.50 Doc ID 15572 Rev 2 13/15 Revision history 5 STFW6N120K3, STP6N120K3, STW6N120K3 Revision history Table 9. 14/15 Document revision history Date Revision Changes 15-Apr-2009 1 First release. 02-Aug-2010 2 Document status promoted from preliminary data to datasheet. Inserted Section 2.1: Electrical characteristics (curves). Doc ID 15572 Rev 2 STFW6N120K3, STP6N120K3, STW6N120K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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