August 2010 Doc ID 15572 Rev 2 1/15
15
STFW6N120K3
STP6N120K3, STW6N120K3
N-channel 1200 V, 1.95 , 6 A, TO-3PF, TO-220, TO-247
Zener-protected SuperMESH3TM Power MOSFET
Features
100% avalanche tested
Extremely large avalanche performance
Gate charge minimized
Very low intrinsic capacitances
Zener-protected
Application
Switching applications
Description
These devices are an N-channel SuperMESH™
Power MOSFET obtained through optimization of
ST’s well-established strip-based PowerMESH™
layout. In addition to pushing on-resistance
significantly down, special attention has been
taken to ensure a very good dynamic
performance coupled with a very large avalanche
capability for the most demanding application.
Figure 1. Internal schematic diagram
Type VDSS
RDS(on)
max IDPw
STFW6N120K3 1200 V < 2.4 6 A 63
STP6N120K3 1200 V < 2.4 6 A 150 W
STW6N120K3 1200 V < 2.4 6 A 150 W
123
TO-220 TO-247
TO-3PF
123
123
Table 1. Device summary
Order codes Marking Package Packaging
STFW6N120K3
6N120K3
TO-3PF
Tu b eSTP6N120K3 TO-220
STW6N120K3 TO-247
www.st.com
Contents STFW6N120K3, STP6N120K3, STW6N120K3
2/15 Doc ID 15572 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STFW6N120K3, STP6N120K3, STW6N120K3 Electrical ratings
Doc ID 15572 Rev 2 3/15
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-3PF TO-220 TO-247
VGS Gate- source voltage 30 V
IDDrain current (continuous) at TC = 25 °C 6 A
IDDrain current (continuous) at TC = 100 °C 3.8 A
IDM (1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 20 A
PTOT Power dissipation at TC = 25 °C 63 150 150 W
IAR
Max current during repetitive or single pulse
avalanche (pulse width limited by TJMAX)7A
EAS
Single pulse avalanche energy (starting
TJ = 25 °C, ID = IAR, VDD = 50 V) 180 mJ
VESD(G-S) G-S ESD (HBM-C = 100 pF, R = 1.5 kΩ) 6000 V
VISO Insulation withstand voltage (AC) 3500 - - V
Tstg Storage temperature -55 to 150 °C
TJOperating junction temperature
Table 3. Thermal data
Symbol Parameter TO-3PF TO-220 TO-247 Unit
Rthj-case Thermal resistance junction-case 1.98 0.83 °C/W
Rthj-pcb
Thermal resistance junction to pcb minimum
footprint ---°C/W
Rthj-amb Thermal resistance junction-ambient max 50 62.5 50 °C/W
TJ
Maximum lead temperature for soldering
purpose 300 °C
Electrical characteristics STFW6N120K3, STP6N120K3, STW6N120K3
4/15 Doc ID 15572 Rev 2
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On / off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage ID = 1 mA, VGS = 0 1200 - - V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TJ = 125 °C --
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ± 20 V, VDS = 0 - - ± 10 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V
RDS(on)
Static drain-source on
resistance VGS = 10 V, ID = 2.5 A - 1.95 2.4
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 -
1050
90
1
-
pF
pF
pF
Co(tr) (1)
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as
Coss when VDS increases from 0 to 80% VDSS.
Equivalent
capacitance time
related
VGS = 0, VDS = 0 to 960 V - 40 - pF
Co(er) (2)
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS.
Equivalent
capacitance energy
related
VGS = 0, VDS = 0 to 960 V - 25 - pF
RG
Intrinsic gate
resistance f = 1 MHz open drain - 3 -
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 960 V, ID = 7.2 A,
VGS = 10 V
(see Figure 20)
-
34
7
23
-
nC
nC
nC
STFW6N120K3, STP6N120K3, STW6N120K3 Electrical characteristics
Doc ID 15572 Rev 2 5/15
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 6. Switching times on/off
Symbol Parameter Test conditions Min. Typ. Max Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 600 V, ID = 3.6 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
-
30
12
58
32
-
ns
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed) --6
20
A
A
VSD (2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 5 A, VGS = 0 - -- 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7.2 A, di/dt = 100 A/µs
VDD = 60 V TJ = 25 °C (see
Figure 24)
-
580
7
25
-
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7.2 A, di/dt = 100 A/µs
VDD = 60 V, TJ = 150 °C
(see Figure 24)
-
840
9
22
-
ns
µC
A
Table 8. Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BVGSO
Gate-source breakdown
voltage IGS = ± 1 mA (open drain) 30 - - V
Electrical characteristics STFW6N120K3, STP6N120K3, STW6N120K3
6/15 Doc ID 15572 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-3PF Figure 3. Thermal impedance for TO-3PF
Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220
Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247
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STFW6N120K3, STP6N120K3, STW6N120K3 Electrical characteristics
Doc ID 15572 Rev 2 7/15
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Normalized BVDSS vs temperature Figure 11. Static drain-source on resistance
Figure 12. Output capacitance stored energy Figure 13. Capacitance variations
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Electrical characteristics STFW6N120K3, STP6N120K3, STW6N120K3
8/15 Doc ID 15572 Rev 2
Figure 14. Gate charge vs gate-source voltage Figure 15. Normalized on resistance vs
temperature
Figure 16. Normalized gate threshold voltage
vs temperature
Figure 17. Maximum avalanche energy vs
temperature
Figure 18. Source-drain diode forward
characteristics
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STFW6N120K3, STP6N120K3, STW6N120K3 Test circuits
Doc ID 15572 Rev 2 9/15
3 Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
Figure 21. Test circuit for inductive load
switching and diode recovery times
Figure 22. Unclamped inductive load test
circuit
Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform
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VDD
VD
IDM
ID
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VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package mechanical data STFW6N120K3, STP6N120K3, STW6N120K3
10/15 Doc ID 15572 Rev 2
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
STFW6N120K3, STP6N120K3, STW6N120K3 Package mechanical data
Doc ID 15572 Rev 2 11/15
TO-220 type A mechanical data
Dim mm
Min Typ Max
A 4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.480.70
D 15.25 15.75
D1 1.27
E10 10.40
e 2.40 2.70
e1 4.95 5.15
F1.231.32
H1 6.20 6.60
J1 2.40 2.72
L1314
L1 3.50 3.93
L20 16.40
L3028.90
P3.75 3.85
Q 2.65 2.95
0015988_Rev_S
Package mechanical data STFW6N120K3, STP6N120K3, STW6N120K3
12/15 Doc ID 15572 Rev 2
DIM. mm.
min. typ max.
A5.30 5.70
C2.803.20
D3.10 3.50
D1 1.80 2.20
E0.80 1.10
F 0.65 0.95
F2 1.80 2.20
G 10.30 11.50
G1 5.45
H 15.30 15.70
L9.80 10 10.20
L2 22.8023.20
L326.30 26.70
L4 43.20 44.40
L5 4.30 4.70
L6 24.30 24.70
L7 14.60 15
N1.80 2.20
R3.80 4.20
Dia3.40 3.80
TO-3PF mechanical data
7627132_C
STFW6N120K3, STP6N120K3, STW6N120K3 Package mechanical data
Doc ID 15572 Rev 2 13/15
Dim. mm.
Min. Typ Max .
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
øP 3.55 3.65
øR 4.50 5.50
S 5.50
TO-247 mechanical data
Revision history STFW6N120K3, STP6N120K3, STW6N120K3
14/15 Doc ID 15572 Rev 2
5 Revision history
Table 9. Document revision history
Date Revision Changes
15-Apr-2009 1 First release.
02-Aug-2010 2 Document status promoted from preliminary data to datasheet.
Inserted Section 2.1: Electrical characteristics (curves).
STFW6N120K3, STP6N120K3, STW6N120K3
Doc ID 15572 Rev 2 15/15
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