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FDFMA2P029Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode -20V, -3.1A, 95m: Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses. Max rDS(on) = 95m: at VGS = -4.5V, ID = -3.1A Max rDS(on) = 141m: at VGS = -2.5V, ID = -2.5A HBM ESD protection level > 2.5kV (Note 3) The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Schottky VF < 0.37V @ 500mA Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm RoHS Compliant Pin 1 A MicroFET 2X2 C D NC A 1 6 C NC 2 5 G D 3 4 S S G MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed Units V 12 V -3.1 -6 Power Dissipation PD Ratings -20 TJ, TSTG Operating and Storage Junction Temperature Range VRRM Schottky Repetitive Peak Reverse Voltage IO Schottky Average Forward Current (Note 1a) 1.4 (Note 1b) 0.7 A W -55 to +150 C 20 V 2 A Thermal Characteristics RTJA Thermal Resistance, Junction to Ambient (Note 1a) 86 RTJA Thermal Resistance, Junction to Ambient (Note 1b) 173 RTJA Thermal Resistance, Junction to Ambient (Note 1c) 86 RTJA Thermal Resistance, Junction to Ambient (Note 1d) 140 C/W Package Marking and Ordering Information Device Marking .P29 Device FDFMA2P029Z (c)2008 Fairchild Semiconductor Corporation FDFMA2P029Z Rev.B2 Package MicroFET 2X2 1 Reel Size 7" Tape Width 8mm Quantity 3000 units www.fairchildsemi.com FDFMA2P029Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode July 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient -20 V ID = -250PA, referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = -16V, VGS = 0V -1 PA IGSS Gate to Source Leakage Current VGS = 12V, VDS = 0V 10 PA -1.5 V mV/C -12 On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250PA, referenced to 25C 4 VGS = -4.5V, ID = -3.1A 60 95 rDS(on) Static Drain to Source On-Resistance VGS = -2.5V, ID = -2.5A 88 141 VGS = -4.5V, ID = -3.1A,TJ =125C 87 140 VDS = -10V, ID = -3.1A -11 VDS = -10V, VGS = 0V, f = 1MHz 540 720 pF 120 160 pF 100 150 pF 13 24 ns 11 20 ns 37 59 ns 36 58 ns 7 10 nC gFS Forward Transconductance -0.6 -1.0 mV/C m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge VDD = -10V, ID = -1A VGS = -4.5V, RGEN = 6: VDD = -10V, ID = -3.1A VGS = -4.5V 1.1 nC 2.4 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = -1.1A (Note 2) -0.8 IF = -3.1A, di/dt = 100A/Ps -1.1 A -1.2 V 25 ns 9 nC Schottky Diode Characteristics VR IR Reverse Voltage Reverse Leakage IR = 1mA TJ = 25C TJ = 25C VR = 20V IF = 500mA VF Forward Voltage IF = 1A FDFMA2P029Z Rev.B2 2 20 V 30 300 PA mA TJ = 125C 10 45 TJ = 25C 0.32 0.37 TJ = 125C 0.21 0.26 TJ = 25C 0.37 0.435 TJ = 125C 0.28 0.33 V www.fairchildsemi.com FDFMA2P029Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics TJ = 25C unless otherwise noted (b) MOSFET RTJA = 173C/W when mounted on a minimum pad of 2 oz copper (c) Schottky RTJA = 86oC/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB. (d) Schottky RTJA = 140oC/W when mounted on a minimum pad of 2 oz copper. a)86oC/W when mounted on a 1in2 pad of 2 oz copper. b)173oC/W when mounted on a minimum pad of 2 oz copper. c)86oC/W when mounted on a 1in2 pad of 2 oz copper. d)140oC/W when mounted on a minimum pad of 2 oz copper. 2: Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. FDFMA2P029Z Rev.B2 3 www.fairchildsemi.com FDFMA2P029Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Notes: 1: RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJCis guaranteed by design while RTJA is determined by the user's board design. (a) MOSFET RTJA = 86C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 6 PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX 5 VGS = -2.0V 4 VGS = -4.5V 3 VGS = -3.0V VGS = -2.5V 2 VGS = -1.5V 1 0 0.0 0.5 1.0 1.5 2.6 VGS =-2.0V 2.2 1.8 VGS = -3.5V 1.4 VGS = -3.0V 1.0 0.6 2.0 0 1 1.6 ID = -3.1A VGS = -4.5V 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 6 200 ID = -1.55A PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX 160 120 TJ = 125oC 80 TJ = 25oC 0 150 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX VDD= -5V 4 TJ = 3 125oC TJ = -55oC 2 1 TJ = 25oC 0 0.0 0.5 1.0 1.5 2.0 -VGS, GATE TO SOURCE VOLTAGE (V) 10 10 VGS = 0V 1 TJ = 125oC TJ = 25oC 0.1 0.01 TJ = -55oC 0.001 0.0001 0.0 2.5 Figure 5. Transfer Characteristics FDFMA2P029Z Rev.B2 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage 6 -ID, DRAIN CURRENT (A) 5 40 Figure 3. Normalized On-Resistance vs Junction Temperature 5 2 3 4 -ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics VGS = -4.5V PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.4 VGS = -2.5V 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDFMA2P029Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 1000 IDD = -3.1A Ciss 8 CAPACITANCE (pF) VDD = -5V VDD = -15V 6 VDD = -10V 4 2 0 2 4 6 8 10 Qg, GATE CHARGE(nC) 12 100 50 0.1 14 f = 1MHz VGS = 0V 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics 20 10 50 rDS(on) LIMIT 100us 1ms 1 10ms VGS=-4.5V 0.1 100ms 1s 10s DC SINGLE PULSE R o =173 TJA C/W o TA = 25 C 0.01 0.1 1 10 60 40 o TA=25 C 30 20 SINGLE PULSE 10 0 -4 10 -3 10 10 TJ = 125oC 1 TJ = 85oC 0.01 TJ = 25oC 0.001 0 200 400 600 VF, FORWARD VOLTAGE(mV) 800 -1 0 1 2 10 3 10 100 TJ = 125oC 10 1 TJ = 85oC 0.1 0.01 TJ = 25oC 0.001 0 5 10 15 20 VR, REVERSE VOLTAGE (V) 25 30 Figure 12. Schottky Diode Reverse Current Figure 11. Schottky Diode Forward Voltage FDFMA2P029Z Rev.B2 -2 10 10 10 10 t, PULSE WIDTH (s) Figure 10. Single Pulse Maximum Power Dissipation IR, REVERSE LEAKAGE CURRENT (mA) Figure 9. Forward Bias Safe Operating Area 0.1 20 SINGLE PULSE o RTJA = 173 C/W -VDS, DRAIN to SOURCE VOLTAGE (V) IF, FORWARD CURRENT(A) Crss Figure 7. Gate Charge Characteristics P(PK), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 0 Coss 5 www.fairchildsemi.com FDFMA2P029Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA 0.01 0.005 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDFMA2P029Z Rev.B2 6 www.fairchildsemi.com FDFMA2P029Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted FDFMA2P029Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. 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