SQJ401EP
www.vishay.com Vishay Siliconix
S11-1396-Rev. A, 18-Jul-11 2Document Number: 67063
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = - 250 μA - 12 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 0.45 - 0.6 - 1.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 8 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = - 12 V - - - 1
μA VGS = 0 V VDS = - 12 V, TJ = 125 °C - - - 50
VGS = 0 V VDS = - 12 V, TJ = 175 °C - - - 250
On-State Drain Currenta I
D(on) V
GS = - 4.5 V VDS ≤ - 5 V - 30 - - A
Drain-Source On-State Resistancea R
DS(on)
VGS = - 4.5 V ID = - 15 A - 0.0050 0.0060
Ω
VGS = - 4.5 V ID = - 15 A, TJ = 125 °C - - 0.0073
VGS = - 4.5 V ID = - 15 A, TJ = 175 °C - - 0.0080
VGS = - 2.5 V ID = - 15 A - 0.0065 0.0080
Forward Transconductancebgfs VDS = - 15 V, ID = - 15 A - 60 - S
Dynamicb
Input Capacitance Ciss
VGS = 0 V VDS = - 6 V, f = 1 MHz
- 8012 10 015
pF Output Capacitance Coss - 3808 4760
Reverse Transfer Capacitance Crss - 3320 4150
Total Gate ChargecQg
VGS = - 4.5 V VDS = - 6 V, ID = - 8.9 A
- 109 164
nC Gate-Source ChargecQgs -11-
Gate-Drain ChargecQgd -29-
Gate Resistance Rgf = 1 MHz 1.8 3.7 5.6 Ω
Turn-On Delay Timectd(on)
VDD = - 6 V, RL = 6 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω
-4365
ns
Rise Timectr -6395
Turn-Off Delay Timectd(off) - 263 395
Fall Timectf - 166 250
Source-Drain Diode Ratings and Characteristicsb
Pulsed CurrentaISM - - - 120 A
Forward Voltage VSD IF = - 25 A, VGS = 0 - - 0.8 - 1.2 V