MOSFET
2010
ѻકⳂᔩ
Discrete Semiconductors
ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ
䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛
㗤催䚼ӊˈϔᑨׅܼDŽ
ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ
䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛
㗤催䚼ӊˈϔᑨׅܼDŽ
MOSFET
01 MOSFET
02
MOSFET
3
5
7
8
9
MOSFET ѻક㒓㸼
ݙ䚼⬉䏃೒ ໪ᔶሎᇌ೒
11
16 17
Contents
ᇣൟ֓ᨎᴎ఼乚ඳ᮹䍟Ԣ⬉偅ࡼ࣪DŽ
ᇍᑨ䖭ϔ䳔∖ⱘ㡖㛑㋏߫DŽ
ϢҹᕔѻકⳌ↨ˈᇚᓔ݇ᤳ༅ޣᇥ 30% ⱘ
催ᗻ㛑催䗳ᓔ݇㋏߫ (400~600V)DŽ
೼Ϣҹᕔⱘ CPT3 ᇕ㺙ৠㄝⱘᅝ㺙䴶⿃ݙ
ᅲ⦄໻⬉⌕࣪ⱘ催⬉⌕㋏߫DŽ
೼ℸ᥼ߎ VDSS=45Vǃ60V ѻક㒓ˈ᳔䗖⫼Ѣ󱂖Ϫҷൟ LED 㚠ܝ⎆᱊⬉㾚ǃ
ҹঞ 24V 䕧ܹⱘ偀䖒偅ࡼ఼⬉䏃DŽ
MOSFETѻક㒓㸼
ECOMOSTM ㋏߫
LED㚠ܝ♃ / 偀䖒偅ࡼ⫼MOSFET
TCPT3ᇕ㺙MOSFET
催䗳ᓔ݇㗤催MOSFET
Close Up
Standard
03 MOSFET
■
ECOMOSTM 系列
Close Up
MOSFET产品线表
ID(A)
0.2 / 0.3 1 / 1.3 1.5 / 2 2.4 / 2.5 3 / 3.5 4 / 4.5
5 / 6 / 6.5 / 7 / 7.5
Page
Package
Drive
Voltage
(V)
V
DSS
(V)
P. 5
P. 5
P. 6
P. 5
P. 6
P. 6
EMT3
TUMT3
TUMT6
VMT3
EMT3
TSMT3
WEMT6
TUMT6
TSMT3
TUMT3
TSMT6
TSST8
WEMT6
TSMT8
TSMT6
TSST8
TSMT8
VMT3
P. 5
VMT3
EMT3
TUMT3
P. 5
P. 6
P. 6
P. 5
TSMT6
TSST8
TSMT8
WEMT6
EMT6
TSST8
TUMT6
TSST8
TUMT6
EMT6
US6J11(P+P)
ES6U1(P)
RZF013P01(P) RZF030P01(P)
RZL035P01(P)
RW1A013ZP(P)
TT8J1(P+P)
RZL025P01(P)
RZR025P01(P)
RW1A025ZP(P)
RUF025N02(N)
RUL035N02(N)
EM6M2(P+N)
EM6K33(N+N)
EM6K7(N+N)
EM6J1(P+P)
RZM002P02(P)
RUE002N02(N)
RZE002P02(P)
RUM002N05(N)
RUE002N05(N)
QS6J11(P+P)
RZR020P01(P)
RW1A020ZP(P)
RUR020N02(N)
RZF020P01(P)
RW1C015UN(N)
RW1C020UN(N)
RUF020N02(N)
QS8J2(P+P)
QS8J1(P+P)
RZR040P01(P)
RUR040N02(N)
RZQ045P01(P)
RT1A040ZP(P)
RUQ050N02(N)
PT1C060UN(N)
PQ1C065UN(N)
PQ1C075UN(N)
RZQ050P01(P)
RT1A050ZP(P)
RQ1A060ZP(P)
RQ1A070ZP(P)
TT8U1(P)
TT8U2(P)
ES6U2(N)
US6M11(P+N)
US6K4(N+N)
TT8K1(N+N)
TT8J21(P+P)
EM6K6(N+N)
RUM002N02(N)
RUM003N02(N)
RUE003N02(N)
RUF015N02(N)
1.5
1.2
1.5
1.8
1.2
1.5
12
20
20
50
20
20
20
12
20
50
12
12 / 20
1.8
Single TypeDual Type
Built-in Diode
Discrete Semiconductors
04 MOSFET
Discrete Semiconductors
RSQ015N06(N)
QS6K21(N+N)
TSMT6
Page
ID(A)
Drive
Voltage
(V)
V
DSS
(V)
6 / 7 8 / 9 10 / 11 12 / 13 15 / 16 18 / 19
20 / 21 / 25
4 / 5
Package
10 P. 9
LPT
R6025ANZ(N)
CPT3
TO-3PF
500
525
600
R5205CND(N)
R6004AND(N) R6006AND(N)
R5207AND(N)
R4008AND(N)
R6012ANJ(N) R6015ANJ(N) R6020ANJ(N)R6018ANJ(N) LPT
R5009ANJ(N) R5011ANJ(N) R5013ANJ(N) R5016ANJ(N) R5021ANJ(N)
R5007ANJ(N) R5019ANJ(N)
R5005CNX(N) R5007ANX(N) R5009ANX(N) R5011ANX(N) R5013ANX(N) R5016ANX(N) R5021ANX(N)R5019ANX(N)
TO-220FM
400
CPT3
CPT3
TO-220FM
R6008ANX(N) R6010ANX(N) R6012ANX(N) R6015ANX(N) R6018ANX(N) R6020ANX(N)
Page
ID(A)
Drive
Voltage
(V)
V
DSS
(V)
1 / 1.5 2 / 2.5 3 / 3.5 4.54 5 6 / 6.5
7 8 / 8.5 9.5
2.5
2.5
4
4
P. 9
45
60
60
45
Package
TSMT3
SOP8
SOP8
TSMT3
TSMT6
SOP8
SOP8
TSMT6
RTR025N05(N)
RTR020N05(N)
RTQ020N05(N)
RSR020N06(N) RSR030N06(N)
RTR030N05(N)
RSS060P05(P)
RVQ040N05(N)
RSH070N05(N)
RSH070P05(P)
RSS085N05(N)
RSS080N05(N)
RSS095N05(N)
RSH065N06(N)
SH8K22
(N+N)
SP8K23
(N+N)
SP8K24
(N+N)
SP8K31
(N+N)
SP8K32
(N+N)
SP8K33
(N+N)
■
高速开关耐高压MOSFET
Page
ID(A)
Drive Voltage
(V)
VDSS
(V) 16 20 Package
TCPT3 P. 8
RSY200N05(N)RSY160P05(P)
45
4
■
TCPT3封装MOSFET
■
LED背光灯 / 马达驱动用MOSFET
Dual Type Single Type
〇ᅮⱘԢ⬉偅ࡼ
䗮䖛䞛⫼ᮄⱘԢ⬉偅ࡼᎹᑣˈᅲ⦄њ೼
VGS=1.2V ᴵӊϟⱘ〇ᅮ䖤԰DŽ঺໪ˈϢҹᕔ
ⱘ2.5V ѻકⳌ↨ˈ໻ᐙ䰡Ԣњᇐ䗮⬉䰏DŽ
ᅗᰃᇚᇐ䗮⢊ᗕϟⱘࡳ㗫ޣᇥ 20~90% ⱘ㡖
㛑㋏߫DŽ
05
Discrete Semiconductors
MOSFET
ᑨ⫼⬉䏃՟
໻ᐙࠞޣ
ᇐ䗮⢊ᗕϟⱘࡳ㗫
ECOMOS
TM
㋏߫
LED Driver
Load Switch Drive Muting Circuit DC/DC Converter Charger Control Switch
<ON-resistance Comparison>
10
9
8
7
6
5
4
3
2
1
0
12 345
ECOMOSTM
(1.2V Drive)
90%
90%
Down
Down
Drive Voltage : VGS(V)
ON-resistance : R
DS
(on) (Ω)
Conventional Product
(2.5V Drive)
Battery
90% Down
1.8
݇Ѣݙ䚼⬉䏃䇋খ䯙 P.16DŽ
∗1 V
GS
=1.2V ∗2 VGS
=1.8
V∗3 VGS=4V
Nch
Package PD(W) Polarity Part No.
V
GS
=1.5V V
GS
=2.5V
R
DS
(on) Typ.(m
Ω
)
V
GS
=4.5V
Nch
Pch
Nch+Nch
Pch+Pch
Nch+Pch
Nch+Nch
0.15
0.15
0.15
0.8
Nch
Pch
RUM003N02
RSM002P03
RUE002N05
EM6K7
EM6K6
EM6J1
EM6M2
RUF015N02
RUF020N02
RUF025N02
RZF013P01
RZF020P01
RZF030P01
0.8Ω
0.7
Ω
1.7Ω1.6Ω
1Ω0.8Ω
0.8Ω0.7Ω
0.8Ω
95
39
1.4Ω
75
28
1.6
Ω
∗3
2.4
Ω
∗1
1.6
Ω
∗1
220
∗2
1Ω
∗2∗3
∗3
∗3
2.4
Ω
∗1
1Ω
∗2
Internal
Circuit
Internal
Circuit
–
–
–
–
–
–
–
–
⑨
⑪
⑩
–
–
–
–
–
–
105
280
170
190
130
75
530
72
200
170
V
DSS
(V)
20
–30
50
20
–20
1Ω0.8Ω
2.4
Ω
∗1
–20
20
49 398020
–12
–12
20
0.8Ω
1.6
Ω
∗1
2.5
I
D
(A)
–0.2
–0.2
0.3
0.2
0.3
0.2
1.5
2
–1.3
–2
–3
–0.2
0.2
Drive
Voltage
(V)
Drive
Volta ge
(V)
1.5
4
Pch RZE002P02 1Ω0.8Ω
2.4
Ω
∗1
–20 –0.2 1.2
1.2
1.8
RUM002N02 0.8Ω
1.6
Ω
∗1
–
–
20 0.2 1.2
–
RUM002N05 1.7Ω
1.6
Ω
2.4
Ω
∗1
50 0.2 1.2
1.2
Nch RUE003N02 0.8Ω0.7Ω1Ω
∗2
20 0.3 1.8
RUE002N02
–
–
0.8Ω
1.6
Ω
∗1
20 0.2 1.2
EM6K33 1.7Ω1.6Ω
2.4
Ω
∗1
⑨
⑨
50 0.2 1.2
1.2
1.8
1.5
1.5
1.5
1.5
1.2
1.2
1.5
1.5
1.5
1.5
1.5
1.5
1.8
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
20
–12
20
Nch
Nch
Package
P
D
(W)
Polarity Part No. ID
(A)
V
GS
=1.5V V
GS
=2.5V
RDS(on) Typ.(mΩ)
V
GS
=4.5V
Pch
Nch+Nch
Pch+Pch
Pch+Pch
Pch
Nch+Pch
1
1
1.25
Nch
Pch
TUMT6
(2017)
TSMT3
(2916)
TSMT6
(2916)
RZL025P01
RZL035P01
US6K4
US6J11
US6M11
RUL035N02
RUR020N02
RUR040N02
RZR020P01
RZR025P01
RZR040P01
RZQ045P01
RZQ050P01
RUQ050N02
QS6J11
–3.5
–2
–2.5
3.5
1.5
–1.3
–4
–2.5
4
2
5
–4.5
–5
–2
–
–
–
⑨
⑩
⑪
–
–
–
–
–
–
–
–
⑪
50
55
55
66
66
200
200
530
170
44
110
110
40
31
30
36
38
105
280
170
95
105
60
33
26
60
27
V
DSS
(V)
–12
20
–12
20
20
–12
20
–12
–12
–12
20
–12
–12
–12
31
44
26
130
190
–1.3 530 280–12 190
1.5 300 170
20 130
75
25
75
44
22
22
25
19
75
VMT3
(1208)
EMT3
(1608)
EMT6
(1612)
TUMT3
(2017)
220
∗2
ѻક㒓
䗮䖛ᓔথᮄⱘԢ⬉偅ࡼᎹᑣˈ
ৃҹ೼ VGS=1.2V ᴵӊϟ䖤԰ⱘ
MOSFETDŽ
ὖ㽕 ⡍⚍
・Ԣ⬉偅ࡼ
・Ԣᇐ䗮⬉䰏
⫼䗨
䋳㥋ᓔ݇
LED ♃偅ࡼ
䴭䷇⬉䏃
DC/DC 䕀ᤶ఼
⬉∴ܙ⬉᥻ࠊㄝ
06
Discrete Semiconductors
MOSFET
90% Down
ECOMOS
TM
WEMT6 / TSST8 / TSMT8 ᇕ㺙
ᇣൟ催ࡳ⥛
RDS(on)↨ҹᕔѻકԢ
㱑Ўᇣൟ /㭘ൟᇕ㺙ˈᅲ⦄њ
催ࡳ⥛ⱘ ECOMOSTM ㋏߫ѻકDŽ
ὖ㽕 ⡍⚍
・ᇣൟǃ㭘ൟǃ催ࡳ⥛ᇕ㺙
・ޣᇥᅝ㺙䴶⿃
TUMT5
30％
thinner
40％
Smaller
Identical performance in a thinner,
smaller package
1.6×1.6×0.6mm
WEMT6
190mΩ Typ. (at 4.5V)
PD＝0.7W
ES6U1(Nch+SBD 0.5A)
170mΩTyp. (at 4.5V)
US5U1(Nch+SBD 0.5A)
TUMT6
RDS (on)
60％ lower
3.0×1.9×0.8mm
TSST8
19mΩ Typ. (at 4.5V)
PD＝1.25W
RT1A050ZP
50mΩTyp. (at 4.5V)
RTL030P02
TSMT6
RDS (on)
80％ lower
3.0×2.8×0.8mm
TSMT8
8mΩ Typ. (at 4.5V)
PD＝1.5W
RQ1A070ZP
35mΩTyp. (at 4.5V)
RTQ040P02
ѻક㒓
Nch
Package Polarity Part No. VGS=2.5V
RDS(on) Typ.(mΩ)
VGS=4.5V
Pch
Pch
Nch+Nch
Pch+Pch
PD(W)
0.7
0.8
1.25
1.5
Pch+SBD（1A）
Pch+Pch
WEMT6
TSST8
TSMT8 Pch
Nch
VDSS(V) ID(A) VGS=1.5V
Internal
Circuit
Drive
Voltage
(V)
݇Ѣݙ䚼⬉䏃䇋খ䯙 P.16DŽ
QS8J1 28 21–12 –4.5 48 1.5 ⑫
Nch+SBD（0.5A）
ES6U2 170
20 1.5 130300 ②
1.5
Pch+SBD（0.5A）
ES6U1 280 190–12 –1.3 530 ⑤
1.5
TT8J1 60 44–12 –2.5 ⑫
110 1.5
RW1C020UN 95
20 2 75170 –
1.5
RW1C015UN 17020 1.5 300 –130 1.5
RW1A013ZP 280 190
–12 –1.3 530 –1.5
RW1A020ZP 105 75
–12 –2 –200 1.5
RW1A025ZP –
58 42
–12 –2.5 110 1.5
RT1A040ZP –12 –4 –55 1.5
30 22
RT1A050ZP –12 –5 –
48 1.526 19
TT8K1 65 5220 2.5 –
100 1.5
Nch PT1C060UN 24 20
20 6–
33 1.5
–12 –6
RQ1A060ZP 22 16 –
39 1.5
11 8–12 –7
RQ1A070ZP –
19 1.5
TT8U1 105 80
–20 –2.4 ⑧
180 1.5
TT8U2 105 80
–20 –2.4 ⑧
180 1.5
TT8J21 68 49–20 –2.5 ⑫
140 1.5
11
RQ1C075UN –
20 14
20 7.5 1.5
16
RQ1C065UN –29 1920 6.5 1.5
∗1 : VGS=1.2V
QS8J2 36 26–12 –4 66 ⑫
1.5
*1
໛᳝ VDSS=45Vǃ60V ⱘ2⾡ѻકDŽᢹ᳝ᇣൟ 㭘ൟ ࡳ⥛ᇕ㺙 TSMT3ǃ
6ҹঞ SOP8 ᇕ㺙ⱘ Nch Pch ѻક㒓DŽ঺໪ˈ䖬໛᳝⬉䏃ঠ⬉䏃
ѻકDŽᇍᑨᑓ⊯⫼䗨DŽ
Єᆠⱘѻક㒓
07
Discrete Semiconductors
MOSFET
LED㚠ܝ♃ / 偀䖒偅ࡼ⫼MOSFET
VDSS=45V, 60V
ѻક㒓
Փ⫼⬉䏃՟
ѻક㒓
<Half bridge>
M
<Full bridge>
M
Motor drive circuitLED backlight circuit VIN
Control
IC
LED
Controller
DC / DC
IC
㧔Unit:mm㧕
〈TSMT6〉
2.8
1.6
2.9
1.0Max.
〈TSMT3〉
1.0Max.
2.9
2.8
1.6
〈SOP8〉
1.25W1.0W 2.0W
1.75
3.9
6.0
5.0
∗
1=
VGS=4.5V
Package Polarity Part No. VGS=4.0V VGS=4.5V
RDS(on) Typ.(mΩ)
PD(W) VDSS(V) ID(A) VGS=10VVGS=2.5V
Qg(nc)
V
GS
=5V
Nch
RTR030N05
RTR025N05
RTR020N05
45
45
45
3.0
2.5
2.0
65
125
180 135
45
90
RSQ015N06
RVQ040N05
60
45 4.0 53 47 38
63
1.5 –
–
275
Nch+Nch QS6K21
45 1.0 415 310
RSS085N05
45 8.5
–
16
Nch RSS080N05
45 8.0
–
18
RSH070N05
45 7.0
–
23
RSH065N06
60 6.5
–
28
SP8K24
45 6.0
–
24
SP8K23
45 5.0
–
33
Nch+Nch SH8K22
45 4.5
–
41
SP8K33
60 5.0
–
38
SP8K32
60 4.5
–
52
SP8K31
60 3.5
–
105
Pch
RSH070P05
–45 –7.0
–
25
RSS095N05
45 9.5 –14
RSS060P05
–45 –6.0
–
50
95
18
20
25
31
26
36
46
40
55
28
15
38 35
SOP8
TSMT3
Nch
130
260
300
100
–
–
–
230
–
13
15
18
24
18
26
33
34
46
85
19
11
26
–
–
–
–
–
–
–
–
⑬
⑬
⑬
⑬
⑬
⑬
–
–
–
–
–
23
RSR030N06
60 3.0 –75 70 60
–
5
2
15.3
13
12
11
15.4
8
7
34
18.9
∗
1
∗
1
∗
1
6.2
3.2
2.9
RTQ020N05
45 2.0 200 150 140 –
–
∗1
∗1
2.3
∗
1
1.5
8.6
6.8
3.7
RSR020N06
60 2.0 –150 140 120
–
2.7
TSMT6
1.0
2.0
1.25
Internal
Circuit
݇Ѣݙ䚼⬉䏃䇋খ䯙 P.16DŽ
⡍⚍
・Ԣᇐ䗮⬉䰏
⫼䗨
・LED㚠ܝ♃⬉䏃
・偀䖒偅ࡼ⬉䏃
೼ℸ᥼ߎVDSS=45Vǃ60Vѻક㒓ˈ
᳔䗖⫼Ѣ󱂖ϪҷൟLED㚠ܝ⎆᱊TV
ҹঞ24V䕧ܹⱘ偀䖒偅ࡼ⬉䏃DŽ
ὖ㽕
催ࡳ⥛ / 㭘ൟ࣪
䗮䖛ᬍ୘ᬷ⛁ᬜ⥛ˈ೼ϢҹᕔⱘCPT3ᇕ㺙
ৠㄝⱘᅝ㺙䴶⿃ݙᅲ⦄њ໻⬉⌕࣪DŽৠᯊ催
ᑺ䰡Ԣ14%ˈᅲ⦄њ㭘ൟ࣪DŽ
08
Discrete Semiconductors
MOSFET
Փ⫼⬉䏃՟
ѻક㒓
᳝ࡽѢޣᇥLCD㚠ܝ♃
䗚ব఼⬉䏃ㄝⱘথ⛁䞣
TCPT3ᇕ㺙MOSFET
Nch
TCPT3 20
Pch
45 20 28 25 20
–45 –16 50 45 35
12
17
RSY200N05
RSY160P05
Package PD(W) Polarity Part No. VDSS(V) ID(A) RDS(on) Typ.(mΩ)Qg(nC)
VGS=5V
VGS=4V VGS=4.5V VGS=10V
CPT3 TCPT3
9.5
2.0
14%
Thinner
Higher current
2.3 9.5
6.5 6.6
(Unit:mm)
TCPT3
（Back side）
໻ൟ⎆᱊ᰒ⼎ሣ(LCD)ⱘথ
⛁䞣៤Ў䞡㽕䇒乬DŽ೼䖭Ͼ
㚠ܝ♃䗚ব఼⬉䏃Ёˈ催ࡳ
⥛ⱘTCPT3ᇕ㺙᳝ࡽѢޣᇥ
থ⛁䞣DŽ
<Half bridge>
M
<
3-phase motor control
>
M
<Full bridge>
M
LCD backlight inverter circuit
24VIN
trans
Control
CCFL / EEFL
Motor drive circuit
ᅗᰃ೼ϢҹᕔⱘCPT3ᇕ㺙ৠㄝ
ⱘᅝ㺙䴶⿃ݙᅲ⦄໻⬉⌕࣪ⱘ
催ࡳ⥛㋏߫DŽ
ὖ㽕 ⡍⚍
・㭘ൟᇕ㺙
・催ࡳ⥛໻⬉⌕
⫼䗨
・LCD㚠ܝ♃䗚ব఼⬉䏃
・偀䖒偅ࡼ⬉䏃
09
Discrete Semiconductors
MOSFET
催䗳ᓔ݇ Ԣᓔ݇ᤳ༅
催䗳trr（PrestoMOSTM）
䗮䖛ᓔথᮄⱘ㗤催Ꮉᑣˈᅲ⦄њԢᇐ䗮⬉䰏ԢQgDŽѻક㒓ࣙᣀĀ催䗳ᓔ݇ǃ㗤催
MOSFET㋏߫āˈ᳔䗖ড়⫼Ѣᓔ݇⬉⑤ⱘPFC⬉䏃ҹঞЏᓔ݇⬉䏃DŽ㗠Ϩˈᮄ᥼ߎ᳔䗖
ড়⫼Ѣ⬉⑤ϔԧൟ䗚ব఼ㄝ催䗳trrൟĀPrestoMOSTMāʽ䗮䖛催䗳ᓔ݇ҹঞݙ䚼Ѡᵕㅵ
ⱘ催䗳trr࣪ˈ᳝ࡽѢ催ᬜǃᤳ༅࣪ҹঞ⬉⑤ᑩᵓⱘᇣൟ࣪DŽ
໻ᐙޣᇥᓔ݇ᤳ༅
ὖ㽕
⡍⚍
・ᇍᑨ催ᓔ݇乥⥛DŽ
˄ޣᇥᓔ݇ᤳ༅˅
・ޣᇥ䚼ӊ᭄
˄ޣᇥᓔ݇ᤳ༅Ԣᇐ䗮⬉䰏˅
⫼䗨
・
ᓔ݇⬉⑤
・✻ᯢ
⡍⚍
・᳝ࡽѢᅲ⦄䗚ব఼ⱘ催ᬜ⥛࣪
・᳝ࡽѢޣᇥᅝ㺙䴶⿃
˄ᇕ㺙ሎᇌ㓽ᇣ : Ԣᇐ䗮⬉䰏ǃ
এ䰸њᑊ㸠Փ⫼ⱘFRD˅
⫼䗨
・LCD-TV
˄⬉⑤ϔԧൟ䗚ব఼˅
・໾䰇㛑⬉∴ࡳ⥛䇗㡖఼
・⬉ᴎ偅ࡼ
催䗳ᓔ݇㗤催MOSFET
ᑨ⫼⬉䏃՟
Presto : ᛣ໻߽䇁ˈᰃ⫼ᴹ㸼⼎Āᵕᖿāⱘ䷇Фᴃ䇁
FRD FRD
MOSFET MOSFET
No FRD
Conventional Product
PrestoMOSTM
RDS (on) × Qg Comparison
30
25
20
15
10
5
450 500 550 600 650
RDS (on) × Qg (Ω・nC)
VDSS (V)
Conventional product
Conventional product
RDX
RDX
series
series
RDS (on) × Qg
comparison
50% reduction
Conventional Product
RDX series
R4□□□ to R6□□□ series
Switching Speed Comparison (OFF)
300
250
200
150
100
50
0
-50
-100
-150
4
3.5
3
2.5
2
1.5
1
0.5
0
-0.5
-1
4
3.5
3
2.5
2
1.5
1
0.5
0
-0.5
-1
300
250
200
150
100
50
0
-50
-100
-150
[V] [V] [A]
[A]
Conventional Product
VDS VDS
IDID
Qg Comparison
140ns
Speed
30%
faster
R4□□□ to R6□□□ series
200ns200ns
Convensional
Convensional
product
product
Convensional
product
Qg reduced 40%
R4□□□ to R6□□□ series
Current
Time
Measurement Conditions㧦di/dt=100µsޓIF=8A (Rated Current)
Conventional Products
trr reduced
80%
trr Waveforms (During Reverse Recovery)
Under Development
10
Discrete Semiconductors
MOSFET
■
催䗳ᓔ݇ൟ
■
催䗳trrൟ
Ć໻⬉⌕ѻક˄~50A˅г೼ᓔথЁDŽ
Conventional product
RDX series
Convensional
product
Package PD(W) PolarityPart No. VDSS(V) ID(A) RDS(on) Typ.(Ω)
VGS=10V
Qg(nC)
VGS=10V
TO-3PF
CPT3
LPT
TO-220FM
50
75
40
40
150
100
40
20
40
50
50
Nch
Nch
Nch
Nch
500 7 0.8 13
500 9 0.55 21
500 11 0.38 30
500 13 0.29 35
500 16 0.21 50
500 19 0.18 55
500 21 0.17 64
600 12 0.32 35
600 15 0.23 60
600 25 0.12 88
600 18 0.21 55
600 20 0.19 65
500 13 0.29 35
500 7 0.8 13
500 9 0.55 21
500 11 0.38 30
600 8 0.6 21
600 10 0.43 25
600 12 0.32 35
600 18 0.21 63
R5009ANJ
R5011ANJ
R5016ANJ
R5019ANJ
R5021ANJ
R6012ANJ
R6015ANJ
R6018ANJ
R5013ANJ
R6020ANJ
R5007ANJ
R5009ANX
R5011ANX
R5013ANX
500 16 0.21 50
R5016ANX
500 19 0.18 55
R5019ANX
500 21 0.16 64
15
600 6 0.9
R5021ANX
R6008ANX
R6006ANX
R6010ANX
R6012ANX
600 15 0.23 60
R6015ANX
R6018ANX
600 20 0.17 65
R6020ANX
R5007ANX
R6025ANZ
525 5 1.3 10.8
R5205CND
525 7 0.78 13
R5207AND
600 6 0.9 15
R6006AND
400 8 0.73 15
R4008AND
Package PD(W) PolarityPart No. VDSS(V) ID(A) RDS(on) Typ.(Ω)
VGS=10V
Qg(nC)
VGS=10V
trr(Typ)
(ns)
TO-220FM 50 Nch 500 11 0.4 30
600 8 0.73 20
500 9 0.65 18 78
85
67
R5011FNX
R6008FNX
R5009FNX
11
Discrete Semiconductors
MOSFET
MOSFETѻક㒓㸼 Standard
■
ᇣֵোMOSFET
Package PolarityPart No. VDSS(V) ID(A) RDS(on) Typ.(Ω)
V
GS
=2.5VV
GS
=1.5V V
GS
=4V V
GS
=4.5V V
GS
=10V
PD(W)
∗1
∗1
∗1
∗2
∗1
∗1
∗1
∗2
∗1
∗1
∗1
∗1
∗1
∗1
∗1
∗1 : VGS = 1.2V ∗2 : VGS = 1.8V
∗1
∗2
0.2
0.2
−0.2
0.3
0.1
0.25
−0.2
0.2
0.2
−0.2
0.3
0.1
0.25
−0.2
0.2
0.2
−0.2
0.2
−0.2
0.3
0.1
0.25
0.1
−0.2
0.2
0.25
0.1
−0.25
0.1
0.2
0.1
0.25
−0.2
0.2
0.25
0.5
0.5
0.2
0.2
1.6
2.4
2.4
1
2.4
1.6
2.4
1
1.6
2.4
2.4
1.6
2.4
1
2.4
2.4
2.4
EMT6
UMT5
UMT6
SST3
SMT6
VMT3
EMT3
SMT3
UMT3
Nch+Nch
Nch+Nch
Pch+Pch
Nch
Pch
0.15
Nch
Pch
Nch
0.15
Nch
Nch
Pch
Pch
Pch
0.15
Nch
Pch
0.2
Nch+Nch0.15
Nch+Nch
Pch+Pch
0.15
Nch0.2
0.2
0.2
Nch+Nch
Nch
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
––
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.8
1.7
1
0.8
7
3
1.7
0.8
1
0.8
7
3
0.8
1.7
1
0.8
1
0.8
7
3
7
2
1.7
3
7
7
1.7
7
3
1.7
3
0.65
0.7
5
2.3
1.6
0.7
5
2.3
1.6
0.7
0.7
5
2.3
5
1.1
2.3
5
1.6
5
5
2.3
1.6
2.3
0.42
0.6
2.8
2.8
1.6
0.8
2.1
1.4
1.6
0.8
2.1
1.4
1.6
0.8
0.8
2.1
1
1.6
2.1
1.4
1.6
2.1
1.4
1.6
2.1
0.4
0.51
1.7
0.9
1.7
0.9
1.7
1.7
0.9
1.7
0.9
1.7
0.35
1.5
1.7
RSM002N06
RUM002N05
RUM002N02
RZM002P02
RUM003N02
2SK3541
RSM002P03
RSE002P03
RSE002N06
RUE002N05
RZE002P02
RUE002N02
RUE003N02
2SK3019
EM6K7
EM6J1
EM6M2
EM6K33
EM6K6
EM6M1
EM6K1
EM6K31
RSU002N06
RUU002N05
2SK3018
RSU002P03
UM5K1N
UM6K33N
UM6K1N
EM6K31N
UM6J1N
RK7002B
RUC002N05
RJK005N03
RHK005N03
2SK2731
SM6K2
20
50
−20
20
30
60
−30
50
20
−20
20
30
60
−30
20
50
−20
20
−20
20
30
60
30
−20
50
60
30
−30
30
50
30
60
−30
50
60
30
30
30
60
Nch
Pch
12
Discrete Semiconductors
MOSFET
■
Ёࡳ⥛MOSFET
Package
P
D
(W)
PolarityPart No.
V
DSS
(V) I
D
(A) R
DS
(on) Typ.(mΩ)
VGS=2.5VVGS=1.5V VGS=4V VGS=4.5V VGS=10V
TSMT8 1.5
TUMT3
WEMT6
TUMT6
1
0.8
1
0.7
1.25
1.25
1.25
TSST8
TSMT6
TSMT3
TSMT5
ΩΩΩ
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
∗2
∗2
∗2
∗2
∗2
∗2
∗2
∗2
∗1
∗2
∗2
∗2
∗2
∗2
∗2
∗2
∗2
∗2
∗2
∗2
∗2
∗2
∗2
∗2
∗2
∗2
∗2
∗2
Pch+Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch+Nch
Pch+Pch
Pch+Pch
Pch+Pch
Pch+Pch
Nch+Nch
Nch+Nch
Nch+Nch
Nch+Nch
Nch+Nch
Nch+Nch
Pch
Pch
Pch
Pch
Pch
Pch
Nch
Nch
Nch
Nch
Pch
Nch
Nch
Nch
Nch
Pch
Pch
Pch
Pch
Pch
Nch
Nch
Pch
Nch
Nch
Nch
Nch
170
300
110
200
530
80
170
72
200
530
220
66
66
110
530
300
530
220
33
100
48
55
110
140
100
140
100
180
140
55
170
55
110
200
40
44
50
200
20
29
19
39
49
66
20
30
30
30
−20
−30
−30
30
30
−20
20
20
30
1.5
3.5
1.5
1.5
−1
−3.5
−2.5
1.4
1.4
−1
6
2.5
2.5
−5
−4
−5
−4
−2.5
−2.5
−2.5
2.5
−2.4
2.5
2.5
−2.5
−2.5
4
2
−4
−2.5
−2
4
2.5
3
2.5
2
2.5
3
2
−4
−3
−1.5
0.5
95
170
58
105
280
49
95
39
105
280
170
70
240
38
36
60
280
170
280
170
56
240
240
570
570
24
65
95
26
30
60
68
65
68
65
105
95
68
33
95
30
60
105
47
95
68
125
180
27
26
31
105
42
55
138
200
260
415
260
310
260
310
14
19
11
22
27
36
55
75
130
42
75
190
250
170
39
75
28
75
190
130
48
170
250
170
31
26
44
190
130
190
130
40
170
170
280
55
85
250
250
280
20
52
65
19
22
36
45
44
49
52
49
52
80
65
49
95
25
75
22
44
75
34
66
48
95
130
74
70
140
45
85
170
7.2
22
19
25
75
30
38
89
140
170
310
170
155
170
155
36
60
148
47
240
34
85
11
16
8
16
21
26
40
55
48
38
32
17
170
115
170
115
40
55
170
170
26
32
60
50
60
120
32
55
115
6.8
300
27
44
96
38
210
25
55
28
40
38
22
12
2
1.8
12
6.5
2.4
1.4
3.2
5
2
18
6.5
2.4
1.8
3.7
1.6
1.4
3.2
5.7
20
2.5
2.4
2
2.4
1.8
4.6
1.6
1.6
2.1
8
5.2
1.4
1.4
2.1
11
3.6
3.2
34
30
13
10.5
13
12
3.6
12
3.6
6.7
3.2
12
4.8
8
2
30
13
6.5
5.9
3.3
6.2
3.2
2.9
2.9
5
2.7
10.5
5.2
3.2
3.5
12
35
31
6.5
7.6
4.6
2.4
2.3
1.7
1.5
1.6
3
1.6
3
6.8
5.3
2.2
6.3
2
14
5.2
18
11
58
34
27
20
10
8.4
5.4
4.6
13
26
270
190
50
180
270
190
42
180
180
310
60
95
270
270
310
70
40
52
70
115
36
70
53
100
135
83
75
150
52
95
190
7.4
32
40
94
150
180
180
170
180
170
40
67
168
53
255
38
95
45
60
53
40
36
19
∗1 : V
GS
= 1.8V ∗2 : V
GS
= 5V
Qg(nC)
VGS=4.5V
2
30 110 76 71 2.8
5
−5
−4.5
−2
4.5
3.5
2
2
1
1
1.5
−1.5
1.5
−1.5
4.5
3.5
2
4
1.5
−4.5
−3
7.5
6.5
−7
−6
−4.5
−5
−4
4
−5
−7
3.5
−4
20
20
−12
−12
−12
30
−30
2
1.5
−2.5
−2
−1.3
1.4
1.5
−1.3
3.5
−3.5
−2.5
−1.3
1.5
20
20
−12
−12
−12
30
30
45
45
45
30
60
60
−30
−30
−30
250
20
−12
−12
−12
30
30
30
45
30
45
30
−20
30
−20
30
30
30
45
60
−30
−30
20
20
−12
−12
−12
20
30
30
30
−30
−12
−12
−30
−30
−12
−20
20
−20
20
−20
30
−20
−30
20
−20
−12
−12
20
−12
20
20
−12
−12
−12
−30
−30
45
−30
−30
30
−12
2.5
2
−3
−2
−1.3
1.5
2.5
1.5
1.4
−1.5
RW1C020UN
RW1C015UN
RW1A025ZP
RW1A020ZP
RW1A013ZP
RW1E014SN
RW1E015RP
RUF025N02
RUF020N02
RZF030P01
RZF020P01
RZF013P01
RUF015N02
RTF025N03
RTF015N03
RSF014N03
RRF015P03
RUL035N02
RZL035P01
RZL025P01
US6J11
US6M11
US6K4
RTL035N03
US6K1
US6M2
RRL035P03
RRL025P03
US6K2
US6M1
RT1C060UN
TT8K1
TT8K2
RT1A050ZP
RT1A040ZP
RT1E050RP
RT1E040RP
TT8J1
TT8J21
TT8M1
TT8M3
TT8M2
TT8J2
RUR040N02
RUR020N02
RZR040P01
RZR025P01
RZR020P01
RTR040N03
RTR025N03
RTR030N05
RTR025N05
RTR020N05
RSR025N03
RSR030N06
RSR020N06
RRR040P03
RRR030P03
RRR015P03
RDR005N25
QS5K2
RUQ050N02
RZQ050P01
RZQ045P01
QS6J11
RTQ045N03
RTQ035N03
RTQ020N03
RTQ020N05
QS6K1
QS6K21
QS6M3
QS6M4
RSQ045N03
RSQ035N03
RSQ020N03
RVQ040N05
RSQ015N06
RRQ045P03
RRQ030P03
RQ1C075UN
RQ1C065UN
RQ1A070ZP
RQ1A060ZP
QS8J1
QS8J5
QS8J4
QS8K21
RQ1E050RP
RQ1E070RP
QS8K2
QS8J2
Nch
Pch
Nch
Pch
13
Discrete Semiconductors
MOSFET
■
<WEMT ・ TUMT ・ TSST ・ TSMT>
■
<MPT3 ・ MPT6>
ES6U2
ES6U3
ES6U1
ES6U41
ES6U42
US5U1
US5U3
US5U30
US5U38
US5U2
US5U35
US6U37
TT8U1
TT8U2
QS5U36
QS5U34
QS5U13
QS5U16
QS5U12
QS5U17
QS5U28
QS5U26
QS5U21
QS5U27
QS5U23
QS5U33
QS6U22
QS6U24
−20
−20
20
20
30
30
30
30
−20
−20
−20
−20
−20
−20
−20
−30
−2.4
−2.4
2.5
1.5
2
2
2
2
-2
−1.5
−1.5
−1.5
−1.5
−2
−1.5
−1
180
180
120
220
105
105
74
170
110
110
110
110
175
260
260
260
260
310
76
76
76
76
97
180
180
180
180
160
170
600
80
80
58
130
71
71
71
71
90
160
160
160
160
145
155
500
95
300
6.7
6.7
3.5
1.8
2.8
2.8
2.8
2.8
4.8
4.2
4.2
4.2
4.2
3.4
3.0
1.7
20
30
−12
30
−20
30
30
−20
−20
30
−45
30
1.5
1.4
−1.3
1.5
−1
1.5
1.5
−1
−1
1.4
−0.7
1.5
300
530
170
280
240
570
240
240
570
570
240
270
180
310
180
180
310
310
270
1000
180
130
250
190
170
280
170
170
280
280
250
900
170
170
170
600
1.8
1.4
2.4
1.6
2.1
1.6
1.6
2.1
2.1
1.4
1.7
1.6
∗1
∗1
∗4
∗4
∗3
∗3
∗2
∗2
−−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−−
−−
−
−−
−−
−
−
−
−
−
−
∗1 :VGS=5V ∗5 :VGS=1.8V∗2,∗3,∗4㧦Ϟϟકৡ⡍ᗻⳌৠˈݙ䚼⬉䏃ϡৠ
Package PD(W) Part No. VDSS(V) ID(A) RDS(on) Typ.(mΩ)
V
GS
=2.5VV
GS
=2.5V V
GS
=4V V
GS
=4.5V V
GS
=10V
1.25
1.25
1.25
1.25
0.8
1
WEMT6
TUMT5
TUMT6
TSST8
TSMT5
TSMT6
Pch+SBD (0.5A)
Nch+SBD (0.5A)
Pch+SBD (0.5A)
Nch+SBD (0.5A)
Pch+SBD (0.5A)
Nch+SBD (0.5A)
Pch+SBD (0.5A)
Nch+SBD (0.5A)
Pch+SBD (0.1A)
Pch+SBD (1.0A)
Pch+SBD (1.0A)
Pch+SBD (1.0A)
Pch+SBD (1.0A)
Pch+SBD (0.7A)
Pch+SBD (0.7A)
Pch+SBD (0.5A)
Nch+SBD (0.7A)
Nch+SBD (0.7A)
Nch+SBD (0.5A)
Nch+SBD (0.5A)
Nch+SBD (1.0A)
Pch+SBD (0.7A)
Pch+SBD (0.7A)
Qg(nC)
VGS=4.5V
∗5
∗1
∗1
Polarity
60
30
60
−30
−30
−30
−30
−12
2
3
2
−5
−7.5
−9
−10
−91911
210 170
160
240
58
25
21
14
165
200
52
22
18
12.5
18
90
150
36
15
13
9
9.2
21
30
39
58 ∗1
−
−
−
−
−
−
−
−
−
−
−
−−
−
−
−
−
−
−
−
Package PD(W) Polarity
Part No. RDS(on) Typ.(mΩ)
V
GS
=4VV
GS
=2.5VV
GS
=1.5V V
GS
=4.5V V
GS
=10V
2
MPT3
(4525)
MPT6
(4532)
Nch
Pch
VDSS(V) ID(A)
∗1 :VGS=4.5V
Qg(nC)
VGS=5V
RJP020N06
RHP030N03
RHP020N06
RP1E050RP
RP1E075RP
RP1E090RP
RP1E100RP
RP1A090ZP
14
Discrete Semiconductors
MOSFET
■
<SOP8>˄⬉䏃ൟ˅
■
<SOP8>˄ঠ⬉䏃ൟ˅
RSH140N03
RSH125N03
RSH110N03
RSH100N03
RSH090N03
RSH065N03
RSH070N05
RSH065N06
RRH140P03
RRH100P03
RRH090P03
RRH075P03
RRH050P03
RRH040P03
RSH070P05
Package PD(W) PolarityPart No. VDSS(V) ID(A) RDS(on) Typ.(mΩ)
2SOP8
Qg(nC)
VGS=5V
30
30
30
30
30
30
45
60
−30
−30
−30
−30
−30
−30
−45
14
12.5
11
10
9
6.5
7
6.5
−14
−10
−9
−7.5
−5
−4
−7
6.5
9.3
11.2
13.5
17
30
25
31
7.3
14
17
25
58
95
28
6
8.6
10.3
12.5
15
27
23
28
6.7
12.5
15
22
52
85
25
4.9
6.5
7.6
9.5
11
19
18
24
5
9
11
15
36
55
19
37
20
17
14
11
6.1
12
11
80
39
30
21
9.2
5.2
34
Nch
Pch
VGS=4V VGS=4.5V VGS=10V
30
30
30
30
30
45
60
−30
−30
−30
30
−30
30
−30
30
−30
30
−30
45
−45
80
−80
250
−250
9
7
6
5
3.5
4.5
4.5
−9
−7
−4.5
9
−7
6
−7
5
−4.5
3.5
−3.5
4.5
−3.5
3.4
−2.6
3
−2.5
17
25
33
58
107
46
55
19
31
60
17
30
33
30
58
65
107
120
46
66
120
230
16
23
30
52
93
41
52
17.5
29
55
16
25
30
25
52
57
93
100
41
60
110
220
12
17
21
36
59
33
46
13.5
21.5
40
12
20
21
20
36
40
59
65
33
45
90
165
1.25Ω
2.2Ω
15
8.4
7.2
3.9
2.5
6.8
7
35
18
8
15
25
7.2
25
3.9
8.5
2.5
5.5
6.8
13
6.6
8.2
5.2
8
−
−
−
−
SH8K4
SH8K3
SH8K2
SH8K1
SH8K5
SH8K22
SH8K32
SH8J66
SH8J65
SH8J62
SH8M4
SH8M5
SH8M3
SH8M2
SH8M24
SH8M41
SH8M70 ∗
Package PD(W) Polarity
Part No. RDS(on) Typ.(mΩ)
VGS=4V VGS=4.5V VGS=10V
2
Nch+Nch
Pch+Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
VDSS(V) ID(A)
∗ :VGS=10V
SOP8
Qg(nC)
VGS=5V
∗
15
Discrete Semiconductors
MOSFET
■
ࡳ⥛MOSFET (CPT3, TO-220FN, TO220-FM)
★： ᓔথЁ
PD(W)Package Polarity
Part No. VDSS(V) ID(A)
Nch
Nch
Nch
30
35
40
30
35
40
20
20
TO-220FN
TO-220FM
CPT3
TCPT3
Pch
Pch
Nch
RDS(on) Typ.(Ω)
VGS=4V VGS=10V
2SK2503
RSD050N06
RK3055E
RSD150N06
RSD050N10
RSD220N06
2SK2504
RSD200N10
RDD050N20
RCD040N25
RCD060N25
RCD080N25
RSD130P10
RSY160P05
RSY200N05
RDN050N20
RDN100N20
RDN150N20
RCX050N25
RCX080N25
RCX100N25
RCX120N25
RCX330N25
RCX510N25
60
60
60
60
60
100
100
100
200
250
250
250
−100
−45
45
200
200
200
250
250
250
250
250
250
5
5
8
15
22
5
5
20
5
4
6
8
−13
−16
20
5
10
15
5
8
10
12
33
51
0.10
0.17
0.048
0.03
0.153
0.25
0.045
0.155
0.05
0.028
0.078
0.11
0.037
0.022
0.141
0.18
0.041
0.55
0.78
0.41
0.225
0.135
0.035
0.02
0.55
0.27
0.12
0.85
0.46
0.245
0.18
0.077
0.048
0.15MAX.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
16
Discrete Semiconductors
MOSFET
②Nch+SBD
(1) Gate
(2) Source
(3) Anode
(4) Cathode
(5) Drain
(1) (2) (3)
(5) (4)
⑦Pch+SBD
(1) Gate
(2) Source
(3) Anode
(4) Cathode
(5) Drain
(6) Drain
(1) (2)
(5)
(3)
(6) (4)
④Pch+SBD
(1) Anode
(2) Source
(3) Gate
(4) Drain
(5) Cathode
(1) (2) (3)
(5) (4)
⑥Pch+SBD
(1) Anode
(2) Source
(3) Gate
(4) Drain
(5) N/C
(6) Cathode
(1) (2) (3)
(6) (5) (4)
⑨Nch+Nch
(1)TR1: Source
(2)TR1: Gate
(3)TR2: Drain
(4)TR2: Source
(5)TR2: Gate
(6)TR1: Drain
(1) (2) (3)
(6) (5) (4)
⑩Nch+Pch
(1)TR1: Source
(2)TR1: Gate
(3)TR2: Drain
(4)TR2: Source
(5)TR2: Gate
(6)TR1: Drain
(1) (2) (3)
(6) (5) (4)
⑪Pch+Pch
(1)TR1: Source
(2)TR1: Gate
(3)TR2: Drain
(4)TR2: Source
(5)TR2: Gate
(6)TR1: Drain
(1) (2) (3)
(6) (5) (4)
⑤Pch+SBD
(1) Gate
(2) Source
(3) Anode
(4) Cathode
(5) Drain
(1) (2) (3)
(5) (4)
①Nch+SBD
(1)
(1) Anode
(2) Source
(3) Gate
(4) Drain
(5) Cathode
(2) (3)
(5) (4)
■MOSFET + SBD
■MOSFET Dual
③Nch+SBD
(1) Gate
(2) Source
(3) Cathode
(4) Anode
(5) Anode
(6) Drain
(1) (2) (3)
(6) (5) (4)
⑫Pch+Pch
(1)TR1: Gate
(2)TR1: Source
(3)TR2: Gate
(4)TR2: Source
(5)TR2: Drain
(6)TR2: Drain
(7)TR1: Drain
(8)TR1: Drain
(1) (2) (3)
(8) (5)(6)(7)
(4)
⑬Nch+Nch
(1)TR1: Source
(2)TR1: Gate
(3)TR2: Source
(4)TR2: Gate
(5)TR2: Drain
(6)TR2: Drain
(7)TR1: Drain
(8)TR1: Drain
(1) (2) (3)
(8) (5)(6)(7)
(4)
(1) Anode
(2) Anode
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Cathode
(8) Cathode
⑧Pch+SBD
(1) (2) (3)
(8) (5)(6)(7)
(4)
ݙ䚼⬉䏃೒
17
Discrete Semiconductors
MOSFET
໪ᔶሎᇌ೒
⊼ : 1) ᇕ㺙ҷⷕЁ( ) ݙⱘᄫヺЎJEITA㓪োˈ< > ݙⱘᄫヺЎJEDEC㓪োDŽ
2) ݇Ѣ䆺㒚ሎᇌˈ䇋খ䯙㾘ḐкDŽ (Unit : mm)
㸼䴶ᅝ㺙ൟ
TCPT3
18
Discrete Semiconductors
MOSFET
ᦦӊൟ
(Unit : mm)
⊼ : ݇Ѣ䆺㒚ሎᇌˈ䇋খ䯙㾘ḐкDŽ
Catalog No.52P6214C 12.2009 ROHM ©
ᴀ䌘᭭᠔䆄䕑ⱘݙᆍᰃ៾㟇ᑈ᳜᮹ⱘᴤ᭭DŽ
Ϲ⽕ℶ೼≵᳝ᕫࠄ㔫ྚ݀ৌ䆌ৃⱘᚙމϟ䕀䕑ǃ㗏ᴀ䌘᭭ⱘ䚼ߚ៪ܼ䚼ݙᆍDŽ
ᴀ䌘᭭᠔䆄䕑ⱘݙᆍˈ᳝෎ѢЎՓ݊᳈ࡴᅠ୘ㄝ಴㗠᳾ܜ乘֓䖯㸠ׂᬍⱘᚙމDŽ
ᴀ䌘᭭᠔䆄䕑ⱘݙᆍাᰃѻકⱘᚙމҟ㒡DŽ㽕Փ⫼䆹ѻકᯊˈ䇋ࡵᖙ䗮䖛߿ⱘ䗨ᕘ㦋প㾘Ḑ䇈ᯢкˈ䖯ϔℹ⹂䅸ѻકⱘ㾘Ḑঞ݊ᗻ㛑DŽ
݇Ѣᴀ䌘᭭᠔䆄䕑ⱘᑨ⫼⬉䏃ᅲ՟ᅗⱘখ᭄ㄝֵᙃᰃ䇈ᯢᴀѻક೼󰵼ޚࡼ԰Փ⫼ᮍ⊩ⱘᴵӊϟDŽ᠔ҹ೼䞣ѻ䆒䅵ᯊ䇋ܙߚഄ㗗㰥໪䚼䇌ᴵӊDŽ
ᴀ䌘᭭᠔䆄䕑ⱘݙᆍᰃ࡯∖ޚ⹂᮴䇃㗠ᜢ䞡㓪ࠊ៤ⱘˈԚϛϔ⫼᠋ᮍߎ⦄಴䆹ݙᆍᄬ೼䫭䇃៪ᠧᄫᏂ䫭䗴៤ᤳ༅ⱘᚙމˈ㔫ྚ݀ৌϡќᡓᢙ䋷ӏDŽ
ᴀ䌘᭭᠔ҟ㒡ⱘᡔᴃݙᆍᰃѻકⱘ݌ൟᎹ԰⢊މᑨ⫼⬉䏃В՟ㄝˈᇍѢ㔫ྚ៪݊Ҫ݀ৌⱘⶹ䆚ѻᴗঞ݊Ҫ᠔᳝ᴗ߽᳾خᯢ⹂ⱘǃᱫ⼎ⱘޚќᅲᮑ៪Փ⫼ⱘᡓ䇎DŽབ಴Փ⫼䖭ѯᡔᴃݙᆍ㗠ᓩথ㑴㒋ˈ㔫ྚ
݀ৌϡќᡓᢙ䋷ӏDŽ
ᴀ䌘᭭᠔ҟ㒡ⱘѻકৃᑨ⫼Ѣϔ㠀ⱘ⬉ᄤ䆒໛˄བAV㺙㕂ǃOA㺙㕂ǃ䗮ֵ䆒໛ǃᆊ⫼⬉఼ѻકঞစФ䆒໛ˈㄝㄝ˅DŽ
ᴀ䌘᭭᠔䗄ѻક᳾԰Ā䰆䕤ᇘ䆒䅵āDŽ
㔫ྚ݀ৌϔⳈ೼ࡾ࡯ᦤ催ѻકⱘ䋼䞣ৃ䴴ᗻˈԚ᳝ᯊ䖬Ӯߎ⦄䖭ḋ䙷ḋⱘ಴ᓩথⱘᬙ䱰DŽ
Ꮰᳯ᠔Փ⫼ᴎ఼ⱘޣ䕑ǃݫԭ䆒䅵ǃ䰆☿࢓㫧ᓊǃᬙ䱰᮴⹡ㄝᅝֱܼ䱰᥾ᮑ㛑໳থ᣹԰⫼ˈ೼㔫ྚѻકߎ⦄ᬙ䱰ᯊϡ㟇Ѣѻ⫳Ҏ䑿ᅝܼџᬙǃ☿♒ᤳ༅ㄝDŽབᵰ䍙乱Փ⫼៪䖱ড䇈ᯢкϞⱘՓ⫼⊼ᛣџ乍ˈ
㔫ྚ݀ৌὖϡᡓᢙӏԩ䋷ӏDŽ
ᴀѻકϡᰃЎᑨ⫼Ѣ㽕∖᳝ᵕ催ৃ䴴ᗻⱘǃϔᮺ䆹ѻકߎ⦄ᬙ䱰៪䇃ࡼ԰ӮⳈ᥹ঞҎ៪ᤳᆇҎԧⱘᴎ఼ǃ㺙㕂㋏㒳˄བ⭫఼Ẅǃ䖤䕧ᴎ఼ǃ㟾ぎᅛ㟾㺙㕂ǃᄤ㛑᥻ࠊǃ➗᭭᥻ࠊঞ৘⾡ᅝܼ㺙
㕂ˈㄝㄝ˅㗠䆒䅵ǃࠊ䗴ⱘDŽབᵰᑨ⫼ѢϞ䴶᠔߫⡍ᅮ⫼䗨ˈ㔫ྚὖϡᡓᢙӏԩ䋷ӏDŽ೼㗗㰥ᇚᴀѻકᑨ⫼ѢϞ䴶᠔߫⡍ᅮ⫼䗨ᯊˈ䇋џܜϢ㔫ྚⱘ㧹Ϯ䚼䮼পᕫ㘨㋏ˈ݅ৠ䅼䆎ⷨおDŽ
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