Agilent CNY17-x Phototransistor Optocoupler High Collector-Emitter Voltage Type Data Sheet Description The CNY17 contains a light emitting diode optically coupled to a phototransistor. It is packaged in a 6-pin DIP package and available in widelead spacing option and lead bend SMD option. Collector-emitter voltage is above 70 V. Response time, tr, is typically 5 s and minimum CTR is 40% at input current of 10 mA. Ordering Information Specify part number followed by Option Number (if desired). CNY17-3-XXXE Lead Free Option Number 000 = No Options 060 = IEC/EN/DIN EN 60747-5-2 Option W00 = 0.4" Lead Spacing Option 300 = Lead Bend SMD Option 500 = Tape and Reel Packaging Option Functional Diagram PIN NO. AND INTERNAL CONNECTION DIAGRAM 6 5 Schematic 4 ANODE 1 IF 6 + BASE VF CATHODE 1 1. ANODE 2. CATHODE 3. NC 2 3 - 2 IC 5 4 Features * High collector-emitter voltage (VCEO = 70 V) * High input-output isolation voltage (Viso = 5000 Vrms) * Current Transfer Ratio (CTR: min. 40% at IF = 10 mA, VCE = 5 V) * Response time (tr: typ., 5 s at VCC = 10 V, IC = 2 mA, RL = 100 ) * Dual-in-line package * UL approved * CSA approved * IEC/EN/DIN EN 60747-5-2 approved * Options available: - Leads with 0.4" (10.16 mm) spacing (W00) - Leads bends for surface mounting (300) - Tape and reel for SMD (500) - IEC/EN/DIN EN 60747-5-2 approvals (060) Applications * System appliances, measuring instruments * Signal transmission between circuits of different potentials and impedances * Feedback circuit in power supply COLLECTOR EMITTER 4. EMITTER 5. COLLECTOR 6. BASE CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD. Package Outline Drawings CNY17-X-000E 7.3 0.5 (0.287) MODEL NO. *2 LEAD FREE A CNY17 - 7.62 0.3 (0.3) 3.5 0.5 (0.138) 6.5 0.5 (0.256) Y Y WW DATE CODE *1 DIMENSIONS IN MILLIMETERS AND (INCHES) 0.5 TYP. (0.02) 3.3 0.5 (0.13) 2.8 0.5 (0.110) ANODE 2.54 0.25 (0.1) 0.5 0.1 (0.02) 0.26 (0.010) 7.62 ~ 9.98 CNY17-X-060E 7.3 0.5 (0.287) MODEL NO. *2 LEAD FREE A CNY17- V 7.62 0.3 (0.3) 3.5 0.5 (0.138) 6.5 0.5 (0.256) Y Y WW ANODE DATE CODE *1 DIMENSIONS IN MILLIMETERS AND (INCHES) 0.5 TYP. (0.02) 3.3 0.5 (0.13) 2.8 0.5 (0.110) 2.54 0.25 (0.1) 0.5 0.1 (0.02) 0.26 (0.010) 7.62 ~ 9.98 CNY17-X-W00E 7.3 0.5 (0.287) MODEL NO. *2 LEAD FREE A CNY17 - 7.62 0.3 (0.3) 3.5 0.5 (0.138) 6.5 0.5 (0.256) 6.9 0.5 (0.272) Y Y WW ANODE 2.3 0.5 (0.09) 2.8 0.5 (0.110) DATE CODE *1 2.54 0.25 (0.1) DIMENSIONS IN MILLIMETERS AND (INCHES) 2 0.5 0.1 (0.02) 0.26 (0.010) 10.16 0.5 (0.4) CNY17-X-300E 7.3 0.5 (0.287) MODEL NO. *2 LEAD FREE A CNY17 Y Y WW ANODE 7.62 0.3 (0.3) 0.35 +0.15/-0.10 (0.014) 3.5 0.5 (0.138) 6.5 0.5 (0.256) 1.2 0.1 (0.047) 0.35 0.25 (0.014) 2.54 0.25 (0.1) 1.0 0.25 (0.039) 10.16 0.3 (0.4) DATE CODE *1 DIMENSIONS IN MILLIMETERS AND (INCHES) 2) When using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of (1) above. 30 seconds 250C Temperature (C) Solder Reflow Temperature Profile 1) One-time soldering reflow is recommended within the condition of temperature and time profile shown at right. 217C 200C 150C 60 sec 25C 60 ~ 150 sec 90 sec Time (sec) Absolute Maximum Ratings Storage Temperature, TS Operating Temperature, TA Lead Solder Temperature, max. (1.6 mm below seating plane) Average Forward Current, IF Reverse Input Voltage, VR Input Power Dissipation, PI Collector Current, IC Collector-Emitter Voltage, VCEO Emitter-Collector Voltage, VECO Collector-Base Voltage, VCBO Collector Power Dissipation Total Power Dissipation Isolation Voltage, Viso (AC for 1 minute, R.H. = 40 ~ 60%) 3 260C (Peak Temperature) -55C to +150C -55C to +100C 260C for 10 s 60 mA 6V 100 mW 150 mA 70 V 6V 70 V 150 mW 250 mW 5000 Vrms 60 sec Electrical Specifications (TA = 25C) Parameter Forward Voltage Reverse Current Terminal Capacitance Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Base Breakdown Voltage Collector Current *Current Transfer Ratio CNY17-1 CNY17-2 CNY17-3 CNY17-4 Collector-Emitter Saturation Voltage Symbol VF IR Ct ICEO BVCEO BVECO BVCBO IC CTR Response Time (Rise) Response Time (Fall) Isolation Resistance Floating Capacitance IF - FORWARD CURRENT - mA 60 40 20 -25 0 25 50 75 100 125 TA - AMBIENT TEMPERATURE - C Figure 1. Forward current vs. temperature. 4 Test Conditions IF = 60 mA VR = 6 V V = 0, f = 1 MHz VCE = 10 V IC = 0.1 mA, IF = 0 IE = 10 A, IF = 0 IC = 0.1 mA, IF = 0 IF = 10 mA VCE = 5 V V IF = 10 mA, IC = 2.5 mA tr tf Riso - - 1 x 1011 5 5 - 10 10 - s s Cf - - 2 pF VCE = 5 V, IC = 10 mA RL = 100 DC 500 V 40 ~ 60% R.H. V = 0, f = 1 MHz IC x 100% IF 80 0 -55 Max. 1.7 10 100 50 - - - 32 80 125 200 320 0.3 PC - COLLECTOR POWER DISSIPATION - mW * CTR = Typ. 1.4 - - - - - - - - - - - - Units V A pF nA V V V mA % VCE(sat) Min. - - - - 70 6 70 4 40 63 100 160 - 200 160 150 100 50 0 -55 -25 0 25 50 75 100 125 TA - AMBIENT TEMPERATURE - C Figure 2. Collector power dissipation vs. temperature. Figure 3. Frequency response. 200 TA = 50C TA = 0C 100 TA = 25C TA = -25C 50 20 10 5 2 0.5 0 1.0 1.5 2.5 2.0 3.0 VCE = 5 V TA = 25C 180 160 140 RBE = 120 100 80 60 100 k 40 500 k 20 0 2 0 IF = 10 mA VCE = 5 V 100 50 0 -55 -25 0 25 50 75 0.16 0.08 0.06 0.04 0.02 tf 2 1 0.05 0.1 0.2 0.5 RL - LOAD RESISTANCE - k Figure 10. Response time vs. load resistance. 5 25 50 75 100 TA - AMBIENT TEMPERATURE - C Figure 8. Collector-emitter saturation voltage vs. temperature. VCE(SAT.) - COLLECTOR-EMITTER SATURATION VOLTAGE - V RESPONSE TIME - s tr 0.5 0.02 0 30 TA = 25C 5 IC = 0.5 mA 4 IC = 1 mA 3 IC = 2 mA 2 IC = 3 mA IC = 5 mA 1 0 0 2.5 5.0 7.5 10.0 IF - FORWARD CURRENT - mA Figure 11. Collector-emitter saturation voltage vs. forward current. IF = 20 mA 25 20 IF = 10 mA 15 10 IF = 5 mA 5 IF = 2 mA 0 2 4 8 6 10 10-6 VCE = 10 V 10-7 10-8 10-9 10-10 10-11 10-12 10-13 -30 0 20 40 60 12.5 80 100 TA - AMBIENT TEMPERATURE - C Figure 9. Collector dark current vs. temperature. 6 IF = 10 mA VCC = 5 V TA = 25C 35 Figure 6. Collector current vs. collectoremitter voltage. 0.12 -25 PC (MAX.) VCE - COLLECTOR-EMITTER VOLTAGE - V 0.10 0 -55 100 Figure 7. Relative current transfer ratio vs. temperature. 5 50 20 IF = 10 mA IC = 2.5 mA 0.14 TA - AMBIENT TEMPERATURE - C 10 10 Figure 5. Current transfer ratio vs. forward current. VCE(SAT.) - COLLECTOR-EMITTER SATURATION VOLTAGE - V RELATIVE CURRENT TRANSFER RATIO - % Figure 4. Forward current vs. forward voltage. 150 5 IF - FORWARD CURRENT - mA VF - FORWARD VOLTAGE - V TA = 25C 40 IF = 30 mA 0 ICEO - COLLECTOR DARK CURRENT - A 1 45 200 IC - COLLECTOR CURRENT - mA TA = 75C CTR - CURRENT TRANSFER RATIO - % IF - FORWARD CURRENT - mA 500 Test Circuit for Response Time Test Circuit for Frequency Response VCC VCC RL RD RD INPUT OUTPUT OUTPUT ~ INPUT 10% OUTPUT 90% ts td tr tf www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6756 2394 India, Australia, New Zealand: (+65) 6755 1939 Japan: (+81 3) 3335-8152 (Domestic/International), or 0120-61-1280 (Domestic Only) Korea: (+65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (+65) 6755 2044 Taiwan: (+65) 6755 1843 Data subject to change. Copyright (c) 2004 Agilent Technologies, Inc. Obsoletes 5989-0290EN October 27, 2004 5989-1736EN RL