MBRF20150CT
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
Low leakage current
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
IEC 61000-4-2, level 4 (ESD), >15KV (air)
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.70 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 150 Volts
FORWARD CURRENT - 20 Amperes
SEMICONDUCTOR
LITE-ON
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.℃
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
20
180
Typical Thermal Resistance (Note 2)
R
0JC
2.5
C/W
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
V
F
V
Voltage Rate of Change (Rated VR)
dv/dt 10000
I
R
@T
J
=125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C 8
5
uA
mA
T
C
=120 C
Maximum Forward
Voltage (Note 1)
I
F
=10A @
I
F
=10A @
I
F
=20A @
I
F
=20A @ T
J
=125 C
T
J
=25 C
T
J
=125 C
T
J
=25 C
MBRF20150CT
150
105
150
V/us
0.92
0.75
1.00
0.86
Typical Junction Capacitance
per element (Note 3)
C
J
250
pF
REV. 3, Jul-2012, KTHC31
G
I
C
E
J
B
K
A
M
D
L
N
F
HH
PIN
1 2 3
ITO-220AB
All Dimensions in millimeter
ITO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
15.50 16.50
10.40
10.0
3.00 3.50
9.30 9.00
2.90 3.60
13.46 14.22
1.15 1.70
0.75
2.70
N
M
L
K
J
I 1.00
2.40
0.70
0.45
3.00 3.30
4.36 4.77
2.48 2.80
2.80
2.50
PIN 1
PIN 3 PIN 2
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Device mounted on 226 x114 x 8mm Alumium plate
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
T
J,
T
STG
Operating Junction and Storage
Temperature Range
-65 to +175
℃
V
dis
V
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
2000