MMDT4124
Document number: DS30164 Rev. 10 - 2 1 of 3
www.diodes.com January 2009
© Diodes Incorporated
MMDT4124
DUAL NPN SMALL SIGNAL SURF ACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMDT4126)
• Ideal for Medium Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Notes 5 and 6)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound,
Note 6. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current – Continuous (Note 1) IC 200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Notes 1 & 2) PD 200 mW
Thermal Resistance, Junction to Ambient (Note 1) R
JA 625 °C/W
Operating and Storage and Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage V
BR
CBO 30 ⎯ V IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage V
BR
CEO 25 ⎯ V IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V
BR
EBO 5.0 ⎯ V IE = 10μA, IC = 0
Collector Cutoff Current ICBO ⎯ 50 nA VCB = 20V, IE = 0V
Emitter Cutoff Current IEBO ⎯ 50 nA VEB = 3.0V, IC = 0V
ON CHARACTERISTICS (Note 4)
DC Current Gain hFE 120
60 360
⎯ ⎯ IC = 2.0mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
Collector-Emitter Saturation Voltage VCE
SAT
⎯ 0.30 V IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage VBE
SAT
⎯ 0.95 V IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ⎯ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance Cibo ⎯ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0
Small Signal Current Gain hfe 120 480 ⎯ VCE = 1.0V, IC = 2.0mA, f = 1.0kHz
Current Gain-Bandwidth Product fT 300 ⎯ MHz VCE = 20V, IC = 10mA, f = 100MHz
Noise Figure NF ⎯ 5.0 dB VCE = 5.0V, IC = 100μA,
RS = 1.0kΩ, f = 1.0kHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
4. Short duration pulse test used to minimize self-heating effect.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Top View Device Schematic
C
2
B
1
E
1
E
2
B
2
C
1