DS04-27502-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
ASSP For Power Supply Applications
Bi-CMOS
Battery Backup IC
MB3790
■DESCRIPTION
The MB3790 is designed to control power supplies to SRAM, logic IC, or other circuit de vices and protects them
against momentar y power failures by using backup batter ies. In addition to its function to supply the power to
these devices, it has a function to switch the source of power to the primary or secondary back up battery when
the power supply voltage drops below a predetermined level. Also, it outputs a reset signal when the power supply
turns on or off or when a fault occurs in the power supply.
Ideally designed as a single-chip IC for power supply control, the MB3790 consumes only a minimal current and
comes in a t hin -t yp e package. There fore, it is best suited for power supp ly co ntr ol in me mory cards and si mil ar
other devices .
■FEATURES
• Input circuit current consumption when non-loaded: 50 µA [typ]
• Output drive current: 200 mA [max]
• Resistance between input and output: 0.5 ohms [typ]
• Input power-down detection level: 4.2 V ± 2.5 %
• On-chip power-on reset circuit
• Primary battery voltage-down detection levels: 2.65 V, 2.37 V
(Continued)
■PACKAGES
* :Since the SSOP is an extremely thin package, use a partial heating method when mounting the device.
Plastic SOP, 16 pin
(FPT-16P-M06)
Plas tic SSOP*, 20 pin
(FPT-20P-M04)
2
MB3790
(Continued)
• On-chip secondary battery recharging function
• Output current during battery backup: VBAT1: 500 µA [max], VBAT2: 50 µA [max]
• Leakage current: 0.5 µA [max]
■PIN ASSIGNMENTS
1
2
3
4
5
6
7
8
N.C.
V BAT1
V OUT
V OUT
V BAT2
ALARM1
ALARM2
GND
16
15
14
13
12
11
10
9
CONTROL
N.C.
V IN
V IN
V SENSE
CT
RESET
RESET
(TOP VIEW)
(FPT-16P-M06)
1
2
3
4
5
6
7
8
9
10
N.C.
V BAT1
V OUT
V OUT
V BAT2
N.C.
N.C.
ALARM1
ALARM2
GND
20
19
18
17
16
15
14
13
12
11
CONTROL
N.C.
V IN
V IN
V SENSE
N.C.
N.C.
CT
RESET
RESET
(TOP VIEW)
(
FPT-20P-M04
)
3
MB3790
■BLOCK DIAGRAM
ALARM1
CONTROL
+
-
+
-
+
-
V IN
V SENSE
GND
240KΩ
R
SQ
1.24V
590KΩ
V BAT2
CT
Vth:1.5V
=0.5Ω
R ON
100Ω
500Ω
3 µA
Vth:3V
V BAT1
2.37V
2.65V V IN
SBD
V IN
V OUT
V OUT
V OUT
ALARM2
RESET
RESET
Reference
voltage power
supply circuit
4
MB3790
■PIN DESCRIPTION
Pin number Symbol I/O Name and function
16P 20P
1 1 N.C. — Non connecti on
22V
BATI I This pin connects to the primary battery.
3, 4 3, 4 VOUT O These pins supply the output voltage. (Range of output current v alue
IOUT ≤ 200 mA)
55V
BAT2 I/O This pin connects to the secondary battery. When the power supply
voltage is greater than or equal to the detection level (i.e., VINH), the
secondary battery is recharged using the constant-voltage method of
charging.
— 6, 7 N.C. — Non connection
6 8 ALARM1 O This is an open-collector output pin for a primary battery alarm
signal. When the power supply voltage is greater than or equal to
VINH, it monitors the primary battery voltage. If the power supply
voltage is less than VINL, it does not monitor the primary battery
voltage. If VBAT1 is less than or equal to 2.65 V, its output voltage is
forced to a Low level.
7 9 ALARM2 O This is an open-collector output pin for a primary battery alarm
signal. When the power supply voltage is greater than or equal to
VINH, it monitors the primary battery voltage. If the power supply
voltage is less than VINL, it does not monitor the primary battery
voltage. If VBAT1 is less than or equal to 2.37 V, its output voltage is
forced to a Low level.
8 10 GND — This pin connects to the ground (0 V).
9 11 RESET O This pin outputs a reset signal. When the power supply voltage is
less than or equal to VINL, it outputs a High level.
If the power supply voltage of SRAM is less than the designated
range, it directly controls the CE or CS of SRAM to disable writes and
thereby protect the data in memory.
10 12 RESET O This pin outputs an inverted signal of RESET.
11 13 CT— This pin is used to set the reset pulse width.
Insert a capacitor between this pin and GND to set the pulse width.
— 14, 15 N.C. — Non connection
12 16 VSENSE I This pin accepts comparator input for detecting the power supply
voltage level. For details, refer to APPLICATION in this data sheet.
13, 14 17, 18 VIN I These pins accept the input voltage f or the device.
15 19 N.C. — Non connecti on
16 20 CONTROL I This pin is used for output control. F or details, refer to APPLICATION
in this data sheet.
5
MB3790
■FUNCTIONAL DESCRIPTION
1. Battery Backup Function
• When the power supply v oltage exceeds the voltage detection le v el (i.e., VINH), the device outputs a current of
up to 200 mA from the VIN power supply to the load circuit via the VOUT pin.
• When the power supply v oltage is less than or equal to VINL, the device switches the source of power for VOUT
from VIN to the primary or secondary battery for backup purposes.
2. Power Supply Voltage Le vel Detect Function
When the power supply v oltage drops below VINL, the v oltage lev el detection comparator is actuated to perf orm the
following (note that the detection voltage level has the hysteresis characteristics listed in ELECTRICAL CHARAC-
TERISTICS in this data sheet):
• The comparator first outputs the RESET signal (High level).
• It switches the source of power for the load circuit to the primary or secondary battery.
The power supply voltage detection level can be adjusted by fitting an external resistor to the VSENSE pin. When
adjusting the detection level, be sure to set it to 4.0 V or higher by considering the power supply voltage for the
internal circuit operation.
In addition, the detection set time can be extended by connecting a capacitator . For this method of adjustment, ref er
to APPLICATION in this data sheet.
3. Reference Voltage Circuit
This is a temperature-compensated reference voltage circuit of a band gap type so that it outputs a trimming-
adjusted exact reference voltage.
The reference voltage power supply is used to set the reference voltage/c onstant current values of t he dete ction
circuit, as well as the secondary battery recharging voltage.
4. Power-on Reset Function
By charging the capacitator connected to the CT pin with constant current (approx. 3 µA), this function determines
the reset pulse width. The calculation formula for this is given below:
Reset pulse width tPO (sec) ≅ CT (F) × 106
(When CT = 1000 pF, tPO ≅ 1 ms [typ])
5. Primary Battery Voltage Detection Function
If the primary battery v oltage drops below the detection level when the power supply voltage is greater than or equal
to VINL, the device outputs an alarm signal (Low level) from th e CMOS output pin, ALARM1 or ALARM2.
Note that the voltage level detecti on c omp arator has t he hysteresis characteristi cs l ist ed in ELE C TRICA L CHA R-
ACTERISTICS in this data sheet.
• When the primary battery voltage is 2.65 V [typ] or less:
The ALARM1 output pin is forced to a Low level to issue an alarm indicating that it’ s time to replace the primary
battery.
• When the primary battery voltage is 2.37 V [typ] or less:
The AL ARM 2 out put pin is forced to a low level to issue an alarm in dicati ng that th e pr ima r y ba ttery voltage
is less than the voltage necessary to retain the SRAM data (approx. 2.0 V)
6. Secondary Battery Rechar ging Function
When the pow er supply voltage is greater than or equal to VINL, the device recharges the secondary battery using
the cons tant-voltage metho d of ch arging. Not e that th e typical value of the device's inte r nal re chargin g resi stor is
500 ohms.
6
MB3790
■DESCRIPTION OF OPERATION
1. Operation When the Input Voltage Goes On or Off
(1) Power-on
While the power supply voltage is less than VINH (4.3 V typ), the protected devices such as SRAM or a microprocessor
are in the standby mode with the power supplied by the battery.
When the power supply voltage rises to a lev el greater than or equal to VINH, the PMOS transistor between the input/
output pins tur ns on and the power for su ch devices is supplied from the VIN pin. At the same time, the primar y
battery voltage detection and the secondary battery recharging operations are actuated.
(2) Standby mode
When th e power supp ly voltage r ises to a level gre ater than or equal to VINH, the RE SET pi n outp uts a High level
f or the set duration of time and the de vices such as SRAM or a microprocessor are held in the standby mode. Note
that the set duration of time can be adjusted by changing the capacitance of the CT pin.
The RESET pin outputs an inverted signal of the RESET pin.
(3) Active mode
The reset signal is cleared and the devices such as SRAM or a microprocessor are placed in the operating mode.
V IN
(1)
DV IN V INH
V INL
V OUT
RESET
V IN-DV1
V BAT1-DVB1
V IN-DV1
V BAT1-DVB1
t PO t PO
V IN-DV1RESET
(2) (3) (4) (2) (3) (4)
High level Low level High level Low level High level
Low levelHigh levelLow levelHigh levelLow level
7
MB3790
(4) Momentary power failure or voltage dip
When the p ower su pply voltage d ro ps les s than or equa l to VINL. (4.2 V ty p) as the p ower supply go es down or its
v oltage dips momentarily, the RESET pin outputs a High le v el and the RESET pin outputs a low lev el. The de vices
such as SRAM or a microprocessor are thereby placed in the standby mode and powered from the battery. When
in this mode, the primary battery voltage detection and the secondary battery recharging operations are stopped.
Note: To guarantee backup operation in case of momentary power failure, make sure the 5 V-to-0 V f all time on VIN
is 50 µs or more by using, for example, a capacitator.
2. Alarm Operation
If the primary battery v oltage decreases while the power supply v oltage (VIN) is greater than or equal to VINH (4.3 V
typ), alarm signals are output as described below. At this time, if the VBAT1 pin is released open, the output from the
alarm pin becomes indeterminate.
(1) Primary battery replacement alarm (alarm-1 output)
If the primary battery v oltage drops to VBAT1 (2.65 V typ), the ALARM1 pin is f orced to a Low lev el to issue an alarm
indicating that it’s time to replace the primary battery.
(2) Primary battery minimum voltage alarm (alarm-2 output)
If the primary battery voltage fur ther drops to VBAT2 (2.3 7 V t yp ), the ALARM2 pi n is forced to a Low level to iss ue
an alarm indicati ng that the pr i mar y battery power has d ropped be low the voltage nec essary to retai n the SR AM
data (approx. 2.0 V).
V BAT1
(1)
DV BAT1 V BATH1
DV BAT2
V BATL1
V BATH2
V BATL2
ALARM1
ALARM2
(1)
(2)(2)
8
MB3790
■ABSOLUTE MAXIMUM RATINGS (Ta = +25°C)
* :When mounted on a 4 cm-square doub le-side epoxy board.
WARNING: Permanent device damage ma y occur if the above ABSOLUTE MAXIMUM RATINGS are e xceeded.
Funct ion al operation sho uld be r estricted to the cond iti ons a s detailed in the ope ratio nal sec tio ns of
this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
■RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Conditions Rating Unit
Input vo lta ge VIN
—
–0.3 to 6 V
Battery voltage VBAT –0.3 to 6 V
Reset output Voltage VRESET – 0.3 to VOUT + 0.3 (≤ 6) V
Alarm output Volt ag e VALARM – 0.3 to VIN + 0.3 (≤ 6) V
Output current IOUT 250 mA
Out put high current IOH Source current 6mA
Output low current IOL Sink current 6mA
Power dissipation PDTa ≤ +25°CSSOP 450* mW
SOP 540* mW
Storage temperature Tstg — –55 to +125 °C
Parameter Symbol Conditions Value Unit
Min. Typ. Max.
Input vo lta ge VIN
—
—5.05.5 V
Battery voltage VBAT —3.03.3 V
Output current IOUT 0—200mA
Output current during
battery backup
IO(BAT1) Supply from the
primary battery ——500µA
IO(BAT2) Supply from the
secondary battery ——50
Operating temperature Top —–30—+70°C
9
MB3790
■ELECTRICAL CHARACTERISTICS
• DC characteristics
(Recommended operating conditions unless otherwise noted.) (VIN = +5 V, Ta = +25°C)
(Continued)
Parameter Symbol Conditions Value Unit
Min. Typ. Max.
All sections Input current IIN1 IOUT = 0 mA — 50 100 µA
Backup
Power
Supply
Section
Input/output voltage
difference DV1IOUT = 1 mA — 0.5 10 mV
DV2IOUT = 200 mA — 100 300 mV
Output delay time tro CO = 0.01 µF, CT = 0 — 2.0 10 µs
Power
Supply
Monitoring
Section
Input low voltage detection
VINL VIN 4.10 4.20 4.30 V
Ta = – 30°C to + 70°C 4.05 4.20 4.35 V
VINH VIN 4.20 4.30 4.40 V
Ta = – 30°C to + 70°C 4.15 4.30 4.45 V
Input low voltage hysteresis
width DVIN VINH – VINL 50 100 150 mV
Reset output voltage VOHR IOHR = 1 mA 4.5 4.8 — V
VOLR IOLR = 5 mA — 0.2 0.4 V
Reset output voltage
duri ng backup V IN = 0 V
VBAT1 = 3 V
VOHR IOHR = 0.2 mA 2.2 2.6 — V
VOLR IOLR = 3 mA — 0.2 0.4 V
Reset pulse width tPO CT = 1000 pF 0.5 1.0 2.0 ms
Input pulse width tPI 5.0 — — µs
Reset output rise time trR CT = 1000 pF
CL = 100 pF —2.03.0µs
Reset output fall time tfR —0.21.0µs
Reset output delay time tpdR VIN slew rate < 0.1 V/µs — 2.0 10 µs
10
MB3790
(Continued)
(VIN = +5 V, Ta = +25°C)
Parameter Symbol Conditions Value Unit
Min. Typ. Max.
Battery-1
Monitoring
Section
Low voltage detection 1
VBATL1 VBAT 2.55 2.65 2.75 V
Ta = – 30°C to +70°C 2.52 2.65 2.78 V
VBATH1 VBAT 2.59 2.69 2.79 V
Ta = – 30°C to +70°C 2.56 2.69 2.82 V
Low voltage detection-1
hysteresis width DVBAT1 VBATH1 – VBATL1 20 40 60 mV
Low voltage detection 2
VBATL2 VBAT 2.27 2.37 2.47 V
Ta = – 30°C to +70°C 2.24 2.37 2.50 V
VBATH2 VBAT 2.31 2.41 2.51 V
Ta = – 30°C to +70°C 2.28 2.41 2.54 V
Low voltage detection-2
hysteresis width DVBAT2 VBATH2 – VBATL2 20 40 60 mV
Low voltage detection
difference DVBAT VBATL1 – VBATL2 0.26 0.28 0.30 V
Battery- 1 inp ut curr ent IBATA VBAT = 3 V, VIN = 0 V –100 — 500 nA
IBATB VBAT = 3 V, VIN = 5 V –10 0 — 500 nA
Battery- 1 outp ut voltage
difference
during backup, CTL = GND DVB1 IBAT1 = 100 µA — 0.30 0.35 V
IBAT1 = 10 µA — 0.10 0.15 V
Alarm output voltage VOHA IOHA = 4 m A 4.5 4.8 — V
VOLA IOLA = 5 mA — 0.2 0.4 V
Alarm output rise time trA CL = 100 pF —2.03.0µs
Alarm output fall time tfA —0.21.0µs
Alarm output delay time tpdA 50 mV overdriv e — 2.0 10 µs
Battery-2
Monitoring
Section
Battery- 2 re ch ar gin g
voltage VCHG ICHG = –10 µA 2.80 3.00 3.20 V
Battery-2 recharging current ICHG VCHG = 2.0 V 1.0 2.0 — mA
Battery- 2 outp ut voltage
difference
duri ng backup DVB2 IBAT2 = 10 µA — 0.10 0.15 V
11
MB3790
■TIMING CHART
1. Rise/Fall Times on Reset and Alarm Pins: tr/tf
2. Reset Pulse Width: tPO; Input Pulse Width: tPI; Reset Output Delay Time: tpdR
ALARM1
ALARM2
RESET
RESET
10%
90% 90%
10%
t r t f
5V
RESET
4V
V IN
t PI
t pdR
t PO t pdR
V INH
V INL
V IH-DV1
V BAT1-DVB2
12
MB3790
3. Alarm Output delay time: tpdA
4. VOUT Output Delay Time: tro
50mV
V BAT1 50mV V BATL1, V BATL2
t pdA
ALARM1
ALARM2
5V
V IN
t ro
V OUT
98%
13
MB3790
■TYPICAL CHARACTERISTIC CURVES
(Continued)
3.0
2.8
2.6
2.4
2.2
2.00.0 -0.2 -0.4 -0.6 -0.8 -1.0
Current I (mA)
Output voltage VOH (V)
V IN = OPEN
V BAT1 =+3V
0.5
0.4
0.3
0.2
0.1
00.0 1.0 2.0 3.0 4.0 5.0
Current I (mA)
Output voltage VOL (V)
V IN =+5V
V BAT1 =+3V
5.0
4.8
4.6
4.4
4.2
4.00.0 -0.4 -0.8 -1.2 -1.6 -2.0
Current I (mA)
Output voltage VOH (V)
V IN =+5V
V BAT1 =+3V
0.5
0.4
0.3
0.2
0.1
00.0 1.0 2.0 3.0 4.0 5.0
Current I (mA)
Output voltage VOL (V)
V IN = OPEN
V BAT1 =+3V
5.0
4.8
4.6
4.4
4.2
4.00.0 -1.0 -2.0 -3.0 -4.0 -5.0
Current I (mA)
Output voltage VOH (V)
V IN =+5V
V BAT1 =+3V
0.5
0.4
0.3
0.2
0.1
00.0 1.0 2.0 3.0 4.0 5.0
Current I (mA)
Output voltage VOL (V)
V IN =+5V
V BAT1 =+2V
1. VOH characteristics of RESET pin 2. VOL characteristics of RESET pin
3. VOH characteristics of RESET pin 4. VOL characteristics of RESET pin
5. VOH characteristics of ALM pin 6. VOL characteristics of ALM pin
14
MB3790
(Continued)
50
40
30
20
10
0-40 -20 0 20
Ambient temperature Ta (°C)
Input current I
IN
(µA)
60
70
40 60 80
V
IN
=+5V
2.7
2.6
2.5
2.4
2.3
2.2-40 -20 0 20
Ambient temperature Ta (°C)
Battery voltage V
BAT
(V)
2.8
2.9
40 60 80
V
BATH1
V
BATL1
V
BATH2
V
BATL2
4.4
4.3
4.2
4.1
4.0
3.9-40 -20 0 20
Ambient temperature Ta (°C)
Power-down detection voltage V
IN
(V)
4.5
4.6
40 60 80
V
INL
V
INH
7. Temperature characteristics of input current
7. Temperature characteristics of power-down
detection voltage
8. Temperature characteristics of battery power
detection voltage
15
MB3790
■APPLICATION
1. Method of Using the CONTROL Pin
It is possib le to control the operation of analog s witch 1 b y entering a High or Low level to the CONTROL pin while
being powered by the battery . The T able below shows how the analog switch operates when its operation is controlled
from the CONTROL pin.
When us ing the pr ima r y and t he secondary batter ies in combinat ion as in the case of memo r y cards, be sure to
set the CONTROL pin High to prevent the primary battery from being recharged by the secondary battery current
flowing from analog switch 1.
• Control Conditions of CONTR OL Pin
*1: If the CONTROL pin is released open, the logic state of the CMOS circuit ma y become instab le letting current
flow into the circuit. Therefore, the CONTROL pin must always have a High or Low level input.
*2: The ON-resistance of the analog switch is approximately 10 K ohms.
Operating state Control conditions ON/OFF State of analog switch*2
Input voltage (VIN)CONTROL pin*1Analog switch 1 Analog switch 2
Standby/active state VIN > VINL High/Low OFF OFF
Backup state VINL > VIN High (= VOUT)OFF ON
VINL > VIN Low (= GND) ON ON
Analog Switc h connection Diagram
V BAT1
Connection to the
primary battery
Analog Switch 1
SBD
V BAT2
Analog Switch 2
V OUT
Connection to the
secondary battery
16
MB3790
3. Outputting Reset Signal Forcibly
The reset signal can be output for cibly by bringing the VSENSE pin of the MB3790 to a Low level (< 1.24). The reset
signal is held on until the capacitator CT is charged up after the VSENSE pin is released open.
[Reset Pulse Width Calculation Formula]
Reset Pulse Width tPO (sec) = CT (F) ×106 (where CT = capacitance)
Example: When CT = 1000 pF, tPO = 1 ms (Typ)
Forced Reset Method 1
Forced Reset Method 2
V IN V IN
VSENSE
47KΩ
SW
CT
GND
CT
SW: Turned on (VRESET = High)
V IN V IN
VSENSE
47KΩ
Control signal
input pin
CT
GND
10KΩ
10KΩ
Q1
CT
When the voltage enough to turn on Q1 (≥ approx. 1.2 V) gives to the Control signal input pin,
VRESET is equal to High level.
17
MB3790
4. Adjusting the Supply Voltage Detection Level Set time
The MB3790 outputs a reset signal when the power supply momentarily goes down or its voltage sags for 5 µs or
more. The set time before this reset signal is output can be extended by connecting a capacitor to the VSENSE pin.
5. Compatibility with JEIDA Memory Card Guideline Ver. 4
The MB3 790 ha s its AL M1 and ALM2 pin s pec if icati ons matc he d to the BV D2 an d BV D1 pin speci fic ati ons of the
JEID A Memory Card Guideline Ver . 4. Therefore, the ALM1 and ALM2 pins can be connected directly to the BVD2
and BVD1 pins.
• Alarm Pin Detection Voltage Levels
VBAT1: Primary battery voltage
Pin Name VBAT1 ≤ 2.37 V 2.37 V < VBAT1 ≤ 2.65V 2.65 V ≤ VBAT1 Connected Pin
ALM1 Low level Low level High level BVD2
ALM2 Low level High level High level BVD1
Adjusting the Supply Voltage Detection Level Set Time
V IN V IN
VSENSE
CGND
5V
4V
t PI
18
MB3790
■STANDARD DEVICE CONFIGURATION
■ORDERING INFORMATION
Part number Package Remarks
MB3790PF 16 pin, Plastic SOP
(FPT-16P-M06)
MB3790PFT 20 pin, Plastic SSOP
(FPT-20P-M04)
V IN
C 1
ALARM1
*1
ALARM2
GND
*2
ALARM1
V BAT1
V OUT
V OUT
V BAT2
ALARM2
GND RESET
RESET
CT
V IN
V IN
CONTROL
*2
C 2
*1
CT
L
O
G
I
C
S
R
A
M
Primary
battery
Secondary
battery
*1 For C1 and C2, use capacitors of 0.022 µF or more.
*2 For VIN and VOUT, connect these two pins to the mating pins, respectively.
19
MB3790
■PACKAGE DIMENSIONS
(Continued)
16-pin, Plastic SOP
(FPT-16P-M06)
+0.40
–0.20
+.016
–.008
+0.05
–0.02
+.002
–.001
+0.25
–0.20 +.010
–.008
0.68(.027)MAX
0.18(.007)MAX
0.15(.006)
0.20(.008)
Details of "B" part
"B"
8.89(.350)REF
1.27(.050)
TYP
INDEX 6.80
.268
0.15
.006
10.15 .400
(.307±.016)(.209±.012)
(.018±.004)
(STAND OFF)
(.020±.008)
0.50±0.20
5.30±0.30 7.80±0.40
0.05(.002)MIN
2.25(.089)MAX
0.45±0.10
Details of "A" part
0.20(.008)
0.40(.016)
0.18(.007)MAX
0.68(.027)MAX
"A"
M
Ø0.13(.005)
0.10(.004)
1994 FUJITSU LIMITED F16015S-2C-4
CDimensions in mm (inches)
20
MB3790
(Continued)
Since the SSOP (FPT-20P-M04) is built in an extremely thin structure, use a partial heating method when mounting
the device.
20-p in, Plastic SSOP
(CASE No.: FPT-20P-M04)
+0.05
–0.02
+.002
–.001
+0.10
–0.05
+.004
–.002
INDEX *
Details of "A" part
(STAND OFF)
(.004±.004)
0.10±0.10
(.020±.008)
0.50±0.20
0°~10°
"A"
0.15
.006
5.40(.213)NOM
0.10(.004)
(.043±.004)
1.10±0.10
5.85(.230)REF
0.22
.009
(.0256±.0047)
0.65±0.12
(.252±.008)
6.40±0.20
(.173±.004)
4.40±0.10
*
(.256±.004)
6.50±0.10
1994 FUJITSU LIMITED F20014S-1C-4
CDimensions in mm (inches)
24
FUJITSU LIMITED
For further information please contact:
Japan
FUJITSU LIMITED
Corporate Global Business Support Division
Electronic Devices
KAWASAKI PLANT, 4-1-1, Kamikodanaka
Nakahara-ku, Kawasaki-shi
Kanagawa 211-88, Japan
Tel: (044) 754-3763
Fax: (044) 754-3329
North and South America
FUJITSU MICROELECTRONICS, INC.
Semiconductor Division
3545 North First Street
San Jose, CA 95134-1804, U.S.A.
Tel: (408) 922-9000
Fax: (408) 432-9044/9045
Europe
FUJITSU MIKROELEKTRONIK GmbH
Am Siebenstein 6-10
63303 Dreieich-Buchschlag
Germany
Tel: (06103) 690-0
Fax: (06103) 690-122
Asia Pacific
FUJITSU MICROELECTR ONICS ASIA PTE. LIMITED
#05-08, 151 Lorong Chuan
New Tech P ark
Singapore 556741
Tel: (65) 281-0770
Fax: (65) 281-0220
F9703
FUJITSU LIMITED Printed in Japan
All Rights Reserved.
The contents of this document are subject to change without
notice. Customers are advised to consult with FUJITSU sales
representatives before ordering.
The information and circuit diagrams in this document presented
as examples of semiconductor device applications, and are not
intended to be incorporated in devices for actual use. Also,
FUJITSU is unable to assume responsibility for infringement of
any patent rights or other rights of third parties arising from the
use of this information or circuit diagrams.
FUJITSU semiconductor devices are intended for use in
standard applications (computers, office automation and other
office equipment, industrial, communications, and measurement
equipment, personal or household devices, etc.).
CAUTION:
Customers considering the use of our products in special
applications where failure or abnormal operation may directly
affect human lives or cause physical injury or property damage,
or where extremely high levels of reliability are demanded (such
as aerospace systems, atomic energy controls, sea floor
repeaters, vehicle operating controls, medical devices for life
support, etc.) are requested to consult with FUJITSU sales
representatives before such use. The company will not be
responsible for damages arising from such use without prior
approval.
Any semiconductor devices have inherently a certain rate of
failure. You must protect against injury, damage or loss from
such failures by incorporating safety design measures into your
facility and equipment such as redundancy, fire protection, and
prevention of over-current levels and other abnormal operating
conditions.
If any products described in this document represent goods or
technologies subject to certain restrictions on export under the
Foreign Exchange and Foreign Trade Control Law of Japan, the
prior authorization by Japanese government should be required
for export of those products from Japan.
