TDA8542TS-T - NXP - Datasheet.Live

DATA SH EET

Product specification

Supersedes data of 1997 Nov 17 1998 Mar 25

INTEGRATED CIRCUITS

TDA8542TS

2 × 0.7 W BTL audio amplifier

1998 Mar 25 2

NXP Semiconductors Product specification

2 × 0.7 W BTL audio amplifier TDA8542TS

FEATURES

•Flexibility in use

•Few external components

•Low saturation voltage of output stage

•Gain can be fixed with external resistors

•Standby mode controlled by CMOS compatible levels

•Low standby current

•No switch-on/switch-off plops

•High supply voltage ripple rejection

•Protected against electrostatic discharge

•Outputs short-circuit safe to ground, VCC and across the

load

•Thermally protected.

GENERAL DESCRIPTION

The TDA8542TS is a two ch annel audio power amplifier

for an output power of 2 ×0.7 W with a 16 Ω load at a 5 V

supply. At a low supply voltage of 3.3 V an output power of

0.6 W with an 8 Ω load can be obtained. The circuit

contains two Bridge-Tied Load (BTL) amplifiers with a

complementary PNP-NPN output stage and standby/mute

logic. The TDA8542TS is available in a SSOP20 package.

APPLICATIONS

•Portable consumer prod ucts

•Personal computers

•Motor-driver (ser vo).

QUICK REFERENCE DATA

ORDERING INFORMATION

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCC supply voltage 2.2 5 18 V

Iqquiescent current VCC =5V −15 22 mA

Istb standby current −−10 μA

Pooutput power THD = 10%; RL=8Ω; VCC = 3.3 V 0.45 0.55 −W

THD = 10%; RL=16Ω; VCC =5V 0.6 0.7 −W

THD total harmonic distortion Po=0.4W −0.15 −%

SVRR supply voltage ripple rejection 50 −−dB

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

TDA8542TS SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

1998 Mar 25 3

NXP Semiconductors Product specification

2 × 0.7 W BTL audio amplifier TDA8542TS

BLOCK DIAGRAM

Fig.1 Block diagram.

handbook, full pagewidth

MBK445

STANDBY/MUTE LOGIC

20 kΩ

INL−

INL+

VCCL

OUTL−

OUTL+

−

STANDBY/MUTE LOGIC

20 kΩ

INR−

INR+

VCCR

SVR

MODE

OUTR−

OUTR+

−

BTL/SE

LGND RGND

CCL

CCR

20 11

110

n.c. 2

n.c. 7

n.c. 9

n.c. 12

n.c. 19

TDA8542TS

1998 Mar 25 4

NXP Semiconductors Product specification

2 × 0.7 W BTL audio amplifier TDA8542TS

PINNING

SYMBOL PIN DESCRIPTION

LGND 1 ground, left channel

n.c. 2 not connecte d

OUTL+ 3 positive loudsp eaker terminal, le ft

channel

MODE 4 operating mode select (standby,

mute, operating)

SVR 5 half supply voltage, decoupling

ripple rejection

BTL/SE 6 BTL loudspeaker or SE

headphone operation

n.c. 7 not connecte d

OUTR+ 8 positive loudspeaker terminal,

right channel

n.c. 9 not connecte d

RGND 10 ground, right channel

VCCR 11 supply voltage, right cha nnel

n.c. 12 not connected

OUTR−13 negative loudspe aker terminal,

right channel

INR−14 negative input, righ t channel

INR+ 15 positive input, right channel

INL+ 16 positive input, left channel

INL−17 negative input, left channel

OUTL−18 negative loudspe aker terminal,

left chan nel

n.c. 19 not connected

VCCL 20 supply voltage, left channel Fig.2 Pin configuration.

handbook, halfpage

TDA8542TS

MBK453

LGND

n.c.

OUTL+

MODE

SVR

BTL/SE

n.c.

OUTR+

n.c.

RGND

VCCL

n.c.

OUTL−

INL−

INL+

INR+

INR−

OUTR−

n.c.

VCCR

FUNCTIONAL DESCRIPTION

The TDA8542TS is a 2 ×0.7 W BTL audio power amplifier

capable of delivering 2 ×0.7 W output power to a 16 Ω

load at THD = 10% using a 5 V power supply. Using the

MODE pin the device can be switched to stan dby and

mute condition. The device is protected by an internal

thermal shutdo wn protection mechanism. The g ain can be

set within a range from 6 to 30 dB by external feed back

resistors.

Power amplifier

The power amplifier is a Bridge-Tied Load (BTL) amplifie r

with a complementary PNP-NPN output stage.

The voltage loss on the positive supply line is the

saturation voltage of a PNP power transistor , on the

negative side the sat ur ation voltage of a NPN power

transistor. The total voltage loss is <1 V and with a 5 V

supply voltage and with a 16 Ω loudspeaker an output

power of 0.7 W can be delivered.

Mode select pin

The device is in the standby mode (with a very low current

consumption) if the voltage at the MODE pin is

>(VCC −0.5 V), or if this pin is floatin g. At a MODE voltage

level of less than 0.5 V the amplifier is fully operational.

In the range betw een 1.5 V and VCC −1.5 V the amplifier

is in mute condition. The mute condition is useful to

suppress plop noise at the ou tput caused by chargin g of

the input capacitor.

1998 Mar 25 5

NXP Semiconductors Product specification

2 × 0.7 W BTL audio amplifier TDA8542TS

Headphone connection

A headphone can be connected to the amplifier using two

coupling capaci tors for each channel. The common

GND pin of the headphone is connected to the ground of

the amplifier (see Fig.13). In this case the BTL/SE pin must

be either at a logic HIGH lev el or not connected at all.

The two coupling capacitors can be omitted if it is allowed

to connect the common GND pin of the headph one jack

not to ground, but to a voltage level of 1⁄2VCC. See Fig.4 for

the application diagram. In this case the BTL/SE pin must

be either at a logic LOW level or connected to groun d.

If the BTL/SE pin is at a LOW level, the power amplifier for

the positive loudsp eaker term inal is always in mute

condition.

LIMITING VALUES

In accordance with th e Absolute Ma ximum Ratin g System (IEC 1 34).

QUALITY SPECIFICATION

In accordance with “SNW-FQ-611-E”.

THERMAL CHARACTE RISTICS

Note

1. See Section “Thermal design considerations”.

Table 1 Maximum ambient temperature at different cond itions

Note

1. See Section “Thermal design considerations”.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCC supply voltage operating −0.3 +18 V

VIinput voltage −0.3 VCC +0.3 V

IORM repetitive peak output current −1A

Tstg storage temperature non-operating −55 +150 °C

Tamb operating ambient temperature −40 +85 °C

Vsc AC and DC short-circ u i t saf e voltage −10 V

Ptot total power dissipation −1.12 W

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient in free air 110(1) K/W

VCC

(V) RL

(Ω)Po

(W)

CONTINUOUS SINE WAVE DRIVEN

Pmax

(W) Tamb(max)

(°C)

3.3 4 2 ×0.65 1.12 27(1)

3.3 8 2 ×0.55 0.60 84

582×1.2 1.33 −(1)

5162×0.70 0.80 62

1998 Mar 25 6

NXP Semiconductors Product specification

2 × 0.7 W BTL audio amplifier TDA8542TS

DC CHARACTERISTICS

VCC =5V; T

amb =25°C; RL=8Ω; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified.

Notes

1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal

to the DC output offset voltage divided by RL.

2. The DC output vo ltage with respect to ground is approxima te l y 1⁄2VCC.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCC supply volt a ge operating 2.2 5 18 V

Iqquiescent current RL=∞; note 1 −15 22 mA

Istb stan dby current VMODE =V

CC −−10 μA

VODC output voltage note 2 −2.2 −V

⎪VOUT+ −VOUT−⎪differential output voltage offset −−50 mV

IIN+, IIN−input bias current −−500 nA

VMODE input voltage mode select operating 0 −0.5 V

mute 1.5 −VCC −1.5 V

standby VCC −0.5 −VCC V

IMODE input current mod e s elect 0 < VMODE <V

CC −−20 μA

VBTL/SE in put voltage BTL/SE pin single-ended 0 −0.6 V

BTL 2 −VCC V

IBTL/SE input cu rrent BTL/SE pin VBTL/SE =0 −−100 μA

1998 Mar 25 7

NXP Semiconductors Product specification

2 × 0.7 W BTL audio amplifier TDA8542TS

AC CHARACTERISTICS

VCC =5V; T

amb =25°C; RL=8Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified.

Notes

1. Gain of the amplifier is in test circuit of Fig.3.

2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a

source impedance of RS=0Ω at the input.

3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS=0Ω at the input.

The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to

the positive supply rail.

4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS=0Ω at the input.

The ripple vo ltage is a sine wave with a f requency betw een 100 Hz and 20 kHz and an amplitud e of 100 mV (RMS),

which is applied to the positive supply rail.

5. Output voltage in mute position is measured with a 1 V (RMS) input voltage in a bandwidth of 20 kHz, so including

noise.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Pooutput power at VCC =5V

THD = 10%; R L=8Ω− 1.2 −W

THD = 10%; R L=16Ω− 0.70 −W

THD = 0.5%; R L=8Ω− 0.9 −W

THD = 0.5%; R L=16Ω− 0.5 −W

at VCC =3.3V

THD = 10%; R L=4Ω− 0.65 −W

THD = 10%; R L=8Ω− 0.55 −W

THD = 0.5%; R L=4Ω− 0.45 −W

THD = 0.5%; R L=8Ω− 0.38 −W

THD total harmonic distortion Po=0.4W −0.15 0.3 %

Gv(cl) closed-loop voltage gain note 1 6 −30 dB

Zi(dif) differential input impedance −100 −kΩ

Vn(o) noise output voltage note 2 −−100 μV

SVRR supply voltage ripple rejec tio n note 3 50 −−dB

note 4 40 −−dB

Vo(mute) output voltage in mute condition note 5 −−200 μV

αcs channel separation 40 −−dB

2R2

-------

1998 Mar 25 8

NXP Semiconductors Product specification

2 × 0.7 W BTL audio amplifier TDA8542TS

TEST AND APPLICATION INFORMATION

Test conditions

Because the application can be either Bridge-Tied Load

(BTL) or Single-Ended (SE), the curves of each application

are shown sep arately.

The thermal resistance = 110 K/W for the SSOP20; the

maximum sine wave power dissipation for Tamb =25°C is:

For Tamb =60°C the maximum total power dissipat ion is:

Thermal design considerations

The ‘measured’ therma l res i stance of the IC package is

highly depend ent on the configura tion and size of the

application board. Data may not be comp arable between

different semiconduc tor manufacturers because the

application boards an d test methods are no t (y et)

standardized. Also, the thermal performance of packages

for a specific application may be different than presented

here, becaus e the configuration of the ap plication boards

(copper area) may be different. Philips Semiconductors

uses FR-4 type application boards with 1 oz copper traces

with solder coating.

The SSOP package has improved thermal conductivity

which reduces the thermal resistance. Using a practical

PCB layout (see Fig.22) with wider copper tracks to the

corner pins and just under the IC, the the rmal resistance

from junction to ambient can be reduced to approximately

80 K/W. For Tamb =60°C the maximum total power

dissipation for this PCB layout is:

BTL application

Tamb =25°C if not specially mentioned, VCC =5V,

f=1kHz, R

L=8Ω, Gv= 20 dB, audio band-pass

22 Hz to 22 kHz.

The BTL application diagram is illustrated in Fig.3.

The quiescent cur rent has been measured without an y

load impedance. The total harmonic distortion as a

function of frequency was measured with a low-pass filter

of 80 kHz. The value of capacitor C3 influences the

behaviour of t he SVR R at lo w freq uenc ies, in crea sing the

value of C3 increases the performance of the SVRR.

The figure of the mode select vo ltage (Vms) as a function

of the supply volta ge shows three areas; operating, mute

and standby. It shows, that the DC-switching levels of the

mute and standby respectively depends on th e supply

voltage level.

SE application

Tamb =25°C if not specially mentioned, VCC =7.5V,

f=1kHz, R

L=4Ω, Gv= 20 dB, audio band-pass

22 Hz to 22 kHz.

The SE application diagram is illustrated in Fig.14.

If the BTL/SE pin (pin 6) is connected to ground, the

positive outputs (pins 3 and 8) will be in mute condition

with a DC level of 1⁄2VCC. When a headphone is use d

(RL≥25 Ω) the SE headphone application can be used

without output coupling capacitors; load between negative

output and one of the positive outputs (e.g. pin 3) as

common pin. The channel separation will be less in

comparison with the application using a coupling capacitor

connected to ground.

Increasing the valu e of e lectroly tic ca pacito r C3 will resu lt

in a better channel separation. Because the positive output

is not designed for high output current (2 ×Io) at low load

impedance (≤16 Ω), the SE applic ation with output

capacitors connected to ground is advised. The capacitor

value of C4/C5 in combination with the load impedance

determines the low frequency behaviour. The THD as a

function of frequency was measured using a low-pass filter

of 80 kHz. The value of capacitor C3 influences the

behaviour of t he SVR R at lo w freq uenc ies, in crea sing the

value of C3 increases the performance of the SVRR.

General remark

The frequency characteristic can be adapted by

connecting a sma ll capacitor across the feedback resistor.

To improve the immunity of HF radiation in radio circuit

applications, a small capacitor can be connected in parallel

with the feedback resistor (56 kΩ); this crea tes a low-pass

filter.

150 25–

110

---------------------- 1.14 W=

150 60–

110

---------------------- 0.82 W=

150 60–

---------------------- 1.12 W=

1998 Mar 25 9

NXP Semiconductors Product specification

2 × 0.7 W BTL audio amplifier TDA8542TS

BTL APPLICATION

handbook, full pagewidth

MBK443

VCC

ViL

OUTL−

INL−

INL+

OUTL+

100 nF 100 μF

20 11

110

TDA8542TS

OUTR−

GND

INR−14

INR+

SVR 15

MODE

BTL/SE

OUTR−

OUTR+

47 μF

1 μF

1 μFR1

10 kΩ

50 kΩ

ViR

Fig.3 BTL application.

Pins 2, 7, 9, 12 and 19 are not connected.

Gain left 2 R2

--------

×=

Gain right 2 R4

--------

×=

Fig.4 Iq as a function of VCC.

RL=∞.

handbook, halfpage

(mA)

VCC (V)

0420

81216

MGD890

Fig.5 THD as a function o f Po.

f=1kHz; G

v=20dB; V

CC =5V; R

L=8Ω.

handbook, halfpage

THD

(%)

10−2

10−1

MBK446

10−210−11Po (W) 10

1998 Mar 25 10

NXP Semiconductors Product specification

2 × 0.7 W BTL audio amplifier TDA8542TS

Fig.6 THD as a function of frequency.

Po=0.5W; G

v=20dB; V

CC =5V; R

L=8Ω.

handbook, halfpage

−1

−2

MBK447

10 10

THD

(%)

f (Hz) 10

Fig.7 Channel separation as a function of

frequency.

VCC =5V,V

o=2V, R

L=8Ω.

(1) Gv=30dB.

(2) Gv=20dB.

(3) Gv=6dB.

handbook, halfpage

−100

−90

−80

−70

−60 MGD893

10 102103104105

f (Hz)

αcs

(dB) (1)

(2)

(3)

Fig.8 SVRR as a function of frequency.

VCC =5V,R

s=0Ω, Vr=100mV.

(1) Gv=30dB.

(2) Gv=20dB.

(3) Gv=6dB.

handbook, halfpage

−80

−60

−40

−20 MGD894

10 10

SVRR

(dB)

f (Hz)

(1)

(2)

(3)

Fig.9 Po as a function of VCC.

THD = 10%.

(1) RL=8Ω.

(2) RL=16Ω.

handbook, halfpage

048

(W)

VCC (V) 12

2.5

1.5

0.5

MBK448

(1) (2)

1998 Mar 25 11

NXP Semiconductors Product specification

2 × 0.7 W BTL audio amplifier TDA8542TS

Fig.10 Worst case power dissipation as a function

of VCC.

(1) RL=8Ω.

(2) RL=16Ω.

handbook, halfpage

(1) (2)

VCC (V)

04812

MBK449

(W)

Fig.11 P as a function of Po.

Sine wave of 1 kHz; VCC =5V; R

L=8Ω.

handbook, halfpage

00.5 2.51 1.5 2 Po (W)

MBK450

(W)

Fig.12 Vo as a function of Vms.

Band-pass = 22 Hz to 22 kHz.

(1) VCC =3V.

(2) VCC =5V.

(3) VCC =12V.

handbook, halfpage

−2

−1

−3

−4

−6

−5

MGD898

−1

(V)

Vms (V)

10 10

(1) (2) (3)

Fig.13 VMODE as a fu nction of VP.

handbook, halfpage

048

VMODE

(V)

12 V

(V)

MGL210

operating

mute

standby

1998 Mar 25 12

NXP Semiconductors Product specification

2 × 0.7 W BTL audio amplifier TDA8542TS

SE APPLICATION

handbook, full pagewidth

MBK444

VCC

ViL OUTL−

INL−

INL+

OUTL+

100 nF

470 μF

100 μF

20 11

110

TDA8542TS

OUTR−

GND

RL = 8 Ω

INR−14

INR+

SVR 15

MODE

BTL/SE

OUTR−

OUTR+

47 μF

1 μF

1 μFR1

10 kΩ

100 kΩ

ViR

Fig.14 Single-ended application.

Pins 2, 7, 9, 12 and 19 are not connected.

Gain left R2

--------

Gain right R4

--------

Fig.15 THD as a function of Po.

f=1kHz, G

v=20dB.

(1) VCC =7.5V, R

L=4Ω.

(2) VCC =9V, R

L=8Ω.

(3) VCC =12V, R

L=16Ω.

handbook, halfpage

Po (W)

THD

(%)

10−1

10−2

MGD899

10−210−11

(1)

(2)

(3)

Fig.16 THD as a function of frequency.

Po=0.5W, G

v=20dB.

(1) VCC =7.5V, R

L=4Ω.

(2) VCC =9V, R

L=8Ω.

(3) VCC =12V, R

L=16Ω.

handbook, halfpage

THD

(%)

f (Hz)

10−1

10−2

MGD900

10 102103104105

(1)

(2)

(3)

1998 Mar 25 13

NXP Semiconductors Product specification

2 × 0.7 W BTL audio amplifier TDA8542TS

Fig.17 Channel separ ation as a function of

frequency.

Vo=1V, G

v=20dB.

(1) VCC =5V, R

L=32Ω, to buffer.

(2) VCC =7.5V, R

L=4Ω.

(3) VCC =9V, R

L=8Ω.

(4) VCC =12V, R

L=16Ω.

(5) VCC =5V, R

L=32Ω.

handbook, halfpage

−100

−80

−60

−40

−20 MGD901

(2)

102103104f (Hz) 105

(4)

(5)

(1)

(3)

αcs

(dB)

Fig.18 SVRR as a function of frequency .

RS=0Ω, Vripple =100mV.

(1) Gv=24dB.

(2) Gv=20dB.

(3) Gv=0dB.

handbook, halfpage

−80

−60

−40

−20 MGD902

10 102103

SVRR

(dB)

f (Hz)

104105

(1)

(2)

(3)

Fig.19 Po as a function of VCC.

THD = 10%.

(1) RL=4Ω.

(2) RL=8Ω.

(3) RL=16Ω.

handbook, halfpage

(1) (2)

(3)

(W)

VCC (V)16

1.6

1.2

0.8

0.4

MBK451

Fig.20 Worst case power dissipation as a function

of VCC.

THD = 10%.

(1) RL=4Ω.

(2) RL=8Ω.

(3) RL=16Ω.

handbook, halfpage

VCC (V)

048

(1) (2) (3)

1612

MBK452

(W)

1998 Mar 25 14

NXP Semiconductors Product specification

2 × 0.7 W BTL audio amplifier TDA8542TS

Fig.21 P as a function of Po.

f=1kHz.

(1) VCC =12V, R

L=16Ω.

(2) VCC =7.5V, R

L=4Ω.

(3) VCC =9V, R

L=8Ω.

handbook, halfpage

(1)

(2)

(3)

2.4

1.6

0.8

00.4 0.8 1.6

1.2

(W)

Po (W)

MGD905

1998 Mar 25 15

NXP Semiconductors Product specification

2 × 0.7 W BTL audio amplifier TDA8542TS

Fig.22 Printed- circ uit board layout (BTL).

handbook, full pagewidth

−OUT1 +OUT1

−OUT2 +OUT2

+VCC

IN1

IN2 CIC

Nijmegen

MODE

11 10

GND TDA

8542TS

8547TS

SELECT

11 kΩ

10 kΩ

11 kΩ

56 kΩ

1 μF

47 μF

100 μF

100 nF

TDA

8542/47TS

MGK997

b. Top view components layout.

a. Top view copper lay out.

1998 Mar 25 16

NXP Semiconductors Product specification

2 × 0.7 W BTL audio amplifier TDA8542TS

PACKAGE OUTLINE

UNIT A1A2A3bpcD

(1) E(1) (1)

ELL

pQZywv θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.15

01.4

1.2 0.32

0.20 0.20

0.13 6.6

6.4 4.5

4.3 0.65 1 0.2

6.6

6.2 0.65

0.45 0.48

0.18 10

0.13 0.1

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

0.75

0.45

SOT266-1 MO-152 99-12-27

03-02-19

detail X

vMA

(A )

0.25

110

20 11

pin 1 index

0 2.5 5 mm

scale

SOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266

-1

max.

1.5

1998 Mar 25 17

NXP Semiconductors Product specification

2 × 0.7 W BTL audio amplifier TDA8542TS

SOLDERING

Introduction

There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when

through-hole and surface mounted components are mixed

on one printed-circuit board. However, wave soldering is

not always suitable for surface mounted ICs, or for

printed-circuits with high population densities. In these

situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.

A more in-depth acco un t of sold er ing ICs can be found in

our “IC Package Databook” (order code 93 98 652 90011).

Reflow soldering

Reflow soldering techniques are suitable for all SSOP

packages.

Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied

to the printed-circuit board by screen printing, stencilling or

pressure-s yringe dispensing before package placement.

Several techniques ex is t for reflowing; for example,

thermal conduction by heated belt. Dwell times vary

between 50 and 300 seconds depending on heating

method. Typical reflow temperatures range fr om

215to250°C.

Preheating is necessary to dry the paste and evaporate

the binding agent. Preheating duration: 45 minutes at

45 °C.

Wave soldering

Wave soldering is not recommended for SSOP packages.

This is because of the likelihood of so lder bridging due to

closely-spaced leads and the possibility of incomplete

solder penetr ation in multi-lead devices.

If wave soldering cannot be avoided, the following

conditions must be observed:

•A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)

soldering technique should be used.

•The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate

solder thieves at the downstream end.

Even with these conditions, only consider wave

soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or

SSOP20 (SOT266-1).

During placement and before soldering, the package must

be fixed with a droplet of adh esive. The adhesive c an be

applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the

adhesive is cured.

Maximum permissible solder temp erature is 260 °C, and

maximum duration of pack age immersion in solder is

10 seconds, if cooled to less than 150 °C within

6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal

of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first so ldering two diagonally -

opposite end leads. Use only a low voltage solder in g iron

(less than 24 V) applied to the flat part of the lead. Contact

time must be limit ed to 10 seconds at up t o 300 °C. When

using a dedicated tool, all other leads can be soldered in

one operatio n wi th in 2 to 5 seconds between

270 and 320 °C.

1998 Mar 25 18

NXP Semiconductors Product specification

2 × 0.7 W BTL audio amplifier TDA8542TS

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s ) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document co ntains data from the objective specification for pro duc t

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production This document contains the prod uct specification.

DISCLAIMERS

Limited warranty and liability ⎯ Information in this

document is believed to be accurate and re liable.

However, NXP Semiconduc tors does not give any

representations or warranties, expressed or implied, as to

the accuracy or completeness of such information and

shall have no liability for the consequences of use of such

information.

In no event shall NXP Semiconductors be liable for any

indirect, incidental, punitive, special or cons equential

damages (including - without limitation - lost profits, lost

savings, busin es s interru ption, costs related to the

removal or replacement of any products or rework

charges) whether or not such damages are based on tort

(including negligence), warranty, breach of contract or any

other legal theory.

Notwithstanding any damages that customer might incur

for any reason whatsoever, NXP Semiconductors’

aggregate and cu mulative liability towa rds customer for

the products described herein shall be limited in

accordance with the Terms and conditions of comme rcial

sale of NXP Semiconductors.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconduct ors pr oduc ts are

not designed, au thorized or warranted to be suitable for

use in life support, life-critical or safety-critical systems or

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reas onably be

expected to result in pe rs onal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductor s pr oducts in such equi pme nt or

application s and therefor e such inclusion and / o r use is at

the customer’s own risk.

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of

their applications and products using NXP

Semiconductors products, and NXP Semiconductors

accepts no liability for any assistance with applications or

customer product design. It is customer’s sole

responsibility to determine whether the NXP

Semiconductors pro du ct is su itable and fit for the

customer’s applications and products planned, as well as

for the planned a pplication and use of custo m er’s third

party customer(s). Customers should provide appropriate

design and opera t ing saf eg ua rd s to minimize the risks

associated with their applications an d products.

NXP Semiconduc tors does n ot a ccept any liabil ity rela ted

to any default, damage, costs or problem which is based

on any weakne ss or default in t he customer’s applic ations

or products, or the application or use by customer’s third

party customer( s) . C us to m er is responsible for doing all

necessary testing for the customer’s applications and

products using NXP Semiconductors produc ts in order to

avoid a default of the applic ations and the products or of

the application or use by customer’s third party

customer(s). NXP does not accept any liability in this

respect.

1998 Mar 25 19

NXP Semiconductors Product specification

2 × 0.7 W BTL audio amplifier TDA8542TS

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) will cause permanent damage to

the device. Limiting values are stress ratings only and

(proper) operation of the device at these or any other

conditions abo ve those given in the Recommended

operating conditions section (if present) or the

Characteristics sections of this document is not warranted.

Constant or repeated exposure to limiting values will

permanently and irreversibly affect the quality and

reliability of the device.

Terms and conditions of commercial sale ⎯ NXP

Semiconductors products are sold s ubject to the general

terms and conditio ns of commercial sale, as published at

http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written ind i vidual agreement. In case an

individual agreeme nt is co nc luded only the terms and

conditions of the resp ective agreement shall app ly. NXP

Semiconductors hereby expressly objects to a pplying the

customer’s general terms and conditions with regard to the

purchase of NXP Semicon ductors products by customer.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for acceptance or the grant, conveyance or

implication of any license under any copyrights, patents or

other industrial or intellectual proper ty rights.

Export control ⎯ This document as well as the item(s)

described he re in may be subject to export control

regulations. Export might require a prior authorization from

national auth or itie s.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

Non-automotive qualified products ⎯ Unless this data

sheet expressly states that this specific NXP

Semiconductors product is au tomotive qualified, the

product is not suitable for automotive use. It is neither

qualified nor te sted in accordanc e with automot ive testing

or application requirements. NXP Semiconductors accepts

no liability for inclusion and/or use of non-automotive

qualified prod ucts in automotive eq uip ment or

applications.

In the event that customer uses the product for design-in

and use in automotive applications to automotive

specifications and standards, customer (a) shall use the

product without NXP Semiconductors’ warranty of the

product for such au t omo tive application s, use and

specifications, and (b) whenever customer uses the

product for automotive applications beyond NXP

Semiconductors’ specifications such use shall be so lely at

customer’s own ris k, and (c) customer fully inde m nifies

NXP Semiconductors for any liability, damages or failed

product clai ms r esult ing fr om custo mer desi gn an d us e o f

the product for automotive ap plic ations beyond NXP

Semiconductors ’ st andard warran ty and NXP

Semiconductors’ product specifications.

NXP Semiconductors

provides High Performance Mixed Signal and Standard Product

solutions that leverage its leading RF, Analog, Power Management,

Interface, Security and Digital Processing expertise

Contact information

For additional information p lease visit: http://www.nxp.com

For sales offices addresses send e-mail to: salesaddresses@nxp.com

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information pr e sent ed in this documen t d oes not form part o f an y q uot ation or contract, is b elieve d to be accurate a nd re li a ble and may be change d

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, exc ept for package outline

drawings which were updated to the latest version.

Printed in The Netherlands 545102/25/02/pp20 Date of releas e : 1998 Mar 25 Document order number: 9397 750 03351