DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features Latest MOSFET silicon technology Key parameters optimized for Class-D audio amplifier applications Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency Low Qrr for better THD and lower EMI Low package stray inductance for reduced ringing and lower EMI Can deliver up to 400 W per channel into 8load in half-bridge configuration amplifier Dual sided cooling compatible Compatible with existing surface mount technologies RoHS compliant, halogen-free Lead-free (qualified up to 260C reflow) VDS 200 V RDS(ON) typ. @ VGS = 10V 51 m Qg typ. 34 nC RG(int) typ. 1.0 DirectFET(R) ISOMETRIC MZ Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details) SQ SX ST SH MQ MX MT MN MZ Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6641PbF device utilizes DirectFET(R) packaging technology. DirectFET(R) packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET(R) package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET(R) package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Base part number Package Type IRF6641PbF DirectFET Medium Can Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF6641TRPbF Absolute Maximum Ratings VGS ID @ TC = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TC = 25C PD @TA = 25C PD @TA = 70C EAS IAR TJ TSTG Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Power Dissipation Single Pulse Avalanche Energy Avalanche Current Linear Derating Factor Operating Junction and Storage Temperature Range Max. 20 26 4.6 3.7 37 89 2.8 1.8 46 11 0.022 -40 to + 150 Units V A W mJ A W/C C Notes through are on page 9 1 www.irf.com (c) 2013 International Rectifier July 1, 2013 IRF6641TRPbF Thermal Resistance Parameter Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted RJA RJA RJA RJC RJ-PCB Static @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient VGS(th) IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Typ. --- 12.5 20 --- 1.0 Min. 200 --- --- 3.0 --- --- --- --- --- Typ. --- 0.23 51 4.0 -11 --- --- --- --- Max. --- --- 59.9 4.9 --- 20 250 100 -100 Units V V/C m V mV/C A S nA Max. 45 --- --- 1.4 --- Units C/W Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 5.5A VDS = VGS, ID = 150A VDS = 200V, VGS = 0V VDS = 160V, VGS = 0V, TJ=125C VGS = 20V VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw td(on) tr td(off) tf Ciss Coss Crss Coss Forward Transconductance Total Gate Charge Pre-VthGate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance 13 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 34 8.7 1.9 9.5 14 11 16 11 31 6.5 2290 240 46 1780 --- 48 --- --- 14 --- --- --- --- --- --- --- --- --- --- Coss Output Capacitance --- 100 --- Min. --- Typ. --- Max. 26 --- --- 37 nC ns pF VDS = 10V, ID = 5.5A VDS = 100V VGS = 10V ID = 5.5A VDS = 16V, VGS = 0V VDD = 100V, VGS = 10V ID = 5.5A RG = 6.2 VGS = 0V VDS = 25V = 1.0MHz VGS=0V, VDS=1.0V, =1.0MHz VGS=0V, VDS=160V, =1.0MHz Diode Characteristics IS ISM VSD trr Qrr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge www.irf.com (c) 2013 International Rectifier Units Conditions A MOSFET symbol showing the integral reverse p-n junction diode. V TJ = 25C, IS = 5.5A, VGS = 0V ns TJ = 25C, IF = 5.5A,VDD = 100V nC di/dt = 100A/s D G S --- --- --- --- 85 320 1.3 130 480 July 1, 2013 IRF6641TRPbF 100 100 BOTTOM VGS 15V 10V 8.0V 7.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 7.0V 10 BOTTOM 10 7.0V 1 60s PU LSE W ID TH 60s PU LSE W IDTH Tj = 150C Tj = 25C 0.1 1 0.1 1 0.1 10 VDS, Drain-to-Source Voltage (V) 2.5 100 Typical RDS(on) (Normalized) ID = 5.5A VGS = 10V 10 T J = 150C T J = 25C T J = -40C 1 VDS = 10V 60s PULSE WIDTH 0.1 2 4 6 8 10 12 14 2.0 1.5 1.0 0.5 16 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 100000 ID= 5.5A VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + Cgd, C ds SHORTED C rss = C gd C oss = C ds + Cgd 10000 C iss 1000 Coss 100 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) C rss 10 10.0 VDS = 160V VDS = 100V 8.0 VDS = 40V 6.0 4.0 2.0 0.0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) www.irf.com (c) 2013 International Rectifier 0 5 10 15 20 25 30 35 40 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs Gate-to-Source Voltage July 1, 2013 IRF6641TRPbF 1000 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 25C T J = -40C 10 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) T J = 150C 1 10 1 100sec 10msec 0.1 Tc = 25C Tj = 150C Single Pulse VGS = 0V 0.01 0 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 10 100 1000 VDS, Drain-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 6.0 Typical VGS(th) , Gate threshold Voltage (V) 5 4 ID, Drain Current (A) 1msec 3 2 1 5.0 4.0 ID = 150A ID = 250A ID = 1.0mA ID = 1.0A 3.0 2.0 0 25 50 75 100 125 -75 -50 -25 150 TA , Ambient Temperature (C) 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 10. Typical Threshold Voltage vs. Junction Temperature Fig 9. Maximum Drain Current vs. Ambient Temperature Thermal Response ( Z thJA ) 100 10 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com (c) 2013 International Rectifier July 1, 2013 100 200 ID = 5.5A 180 T J = 25C 90 160 Typical RDS(on) ( m) RDS(on), Drain-to -Source On Resistance (m) IRF6641TRPbF 140 120 TJ = 125C 100 80 TJ = 25C 60 80 Vgs = 7.0V Vgs = 8.0V Vgs = 10V Vgs = 15V 70 60 40 20 50 0 4 6 8 10 12 14 0 16 10 VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance vs. Gate Voltage 20 30 40 50 60 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 15V DRIVER L VDS D.U.T RG IAS 20V + V - DD A 0.01 tp Fig 15a. Unclamped Inductive Test Circuit V(BR)DSS EAS , Single Pulse Avalanche Energy (mJ) 200 ID 180 3.7A 5.7A BOTTOM 11A 160 140 120 100 80 60 40 20 0 25 tp TOP 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 14. Maximum Avalanche Energy vs. Drain Current I AS Fig 15b. Unclamped Inductive Waveforms Fig 16a. Switching Time Test Circuit 5 www.irf.com (c) 2013 International Rectifier Fig 16b. Switching Time Waveforms July 1, 2013 Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 17a. Gate Charge Test Circuit Qgd Qgodr Fig 17b. Gate Charge Waveform Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs IRF6641TRPbF DirectFET(R) Substrate and PCB Layout, MZ Outline (Medium Size Can, Z-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com (c) 2013 International Rectifier July 1, 2013 IRF6641TRPbF DirectFET(R) Outline Dimension, MZ Outline (Medium Size Can, D-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DIMENSIONS METRIC CODE MIN MAX A 6.35 6.25 B 4.80 5.05 C 3.95 3.85 D 0.45 0.35 E 0.72 0.68 F 0.72 0.68 G 0.97 0.93 H 0.67 0.63 J 0.32 0.28 K 1.26 1.13 L 2.66 2.53 M 0.616 0.676 R 0.020 0.080 P 0.17 0.08 IMPERIAL MAX MAX 0.246 0.250 0.189 0.201 0.152 0.156 0.014 0.018 0.027 0.028 0.027 0.028 0.037 0.038 0.025 0.026 0.011 0.013 0.044 0.050 0.100 0.105 0.0235 0.0274 0.0008 0.0031 0.003 0.007 DirectFET(R) Part Marking Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com (c) 2013 International Rectifier July 1, 2013 IRF6641TRPbF DirectFET(R) Tape & Reel Dimension (Showing component orientation). LOADED TAPE FEED DIRECTION NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6641TRPBF). For 1000 parts on 7" reel, order IRF6641TR1PBF CODE A B C D E F G H DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.201 0.209 5.10 5.30 0.256 0.264 6.50 6.70 0.059 N.C 1.50 N.C 0.059 0.063 1.50 1.60 STANDARD OPTION METRIC CODE MIN MAX A 330.0 N.C B 20.2 N.C C 12.8 13.2 D 1.5 N.C E 100.0 N.C F N.C 18.4 G 12.4 14.4 H 11.9 15.4 REEL DIMENSIONS (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC MIN MAX MIN MAX MIN MAX 12.992 N.C 6.9 177.77 N.C N.C 0.795 0.75 N.C 19.06 N.C N.C 0.504 0.53 0.50 13.5 0.520 12.8 0.059 0.059 N.C 1.5 N.C N.C 3.937 2.31 N.C 58.72 N.C N.C N.C N.C 0.53 N.C 0.724 13.50 0.488 0.47 11.9 N.C 0.567 12.01 0.469 0.47 11.9 N.C 0.606 12.01 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Qualification Information Consumer (per JEDEC JESD47F) Qualification Level Moisture Sensitivity Level DirectFET MSL1 (per JEDEC J-STD-020D) Yes RoHS Compliant Qualification standards can be found at International Rectifier's web site: http://www.irf.com/product-info/reliability/ Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.77mH, RG = 25, IAS = 11A. Surface mounted on 1 in. square Cu board. Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Used double sided cooling , mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. TC measured with thermal couple mounted to top (Drain) of part. R is measured at TJ of approximately 90C. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com (c) 2013 International Rectifier July 1, 2013 IRF6641TRPbF Revision History Date 06/28/2013 05/17/2013 10 www.irf.com Comments Added the Consumer qualification level information, on page 9. Converted the data sheet to Class-D Audio formatting template. No change in electrical parameters. (c) 2013 International Rectifier July 1, 2013