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IRF6641TRPbF
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRF6641PbF DirectFET Medium Can Tape and Reel 4800 IRF6641TRPbF
SQ SX ST SH MQ MX MT MN MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and
internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6641PbF device utilizes DirectFET® packaging technology. DirectFET® packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET® package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET® package
also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation.
These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter Max. Units
VGS Gate-to-Source Voltage ±20 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 26
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.6
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.7 A
IDM Pulsed Drain Current 37
EAS Single Pulse Avalanche Energy 46 mJ
IAR Avalanche Current 11 A
PD @TC = 25°C Power Dissipation 89
PD @TA = 25°C Power Dissipation 2.8 W
PD @TA = 70°C Power Dissipation 1.8
Linear Derating Factor 0.022 W/°C
TJ Operating Junction and -40 to + 150 °C
TSTG Storage Temperature Range
Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details)
DIGITAL AUDIO MOSFET
DirectFET® ISOMETRIC
MZ
VDS 200 V
RDS(ON) typ. @ VGS = 10V 51 m
Qg typ. 34 nC
RG(int) typ. 1.0
Key Parameters
Features
Latest MOSFET silicon technology
Key parameters optimized for Class-D audio amplifier
applications
Low RDS(on) for improved efficiency
Low Qg for better THD and improved efficiency
Low Qrr for better THD and lower EMI
Low package stray inductance for reduced ringing and lower
EMI
Can deliver up to 400 W per channel into 8load in half-bridge
configuration amplifier
Dual sided cooling compatible
Compatible with existing surface mount technologies
RoHS compliant, halogen-free
Lead-free (qualified up to 260°C reflow)
Notes through are on page 9
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IRF6641TRPbF
D
S
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.23 ––– V/°C Reference to 25°C, ID = 1.0mA
RDS(on) Static Drain-to-Source On-Resistance ––– 51 59.9 m VGS = 10V, ID = 5.5A
VGS(th) Gate Threshold Voltage 3.0 4.0 4.9 V VDS = VGS, ID = 150µA
VGS(th) Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 200V, VGS = 0V
––– ––– 250 VDS = 160V, VGS = 0V, TJ=125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Forward Transconductance 13 ––– ––– S VDS = 10V, ID = 5.5A
Qg Total Gate Charge ––– 34 48
Qgs1 Pre-VthGate-to-Source Charge ––– 8.7 ––– V
DS = 100V
Qgs2 Post-Vth Gate-to-Source Charge ––– 1.9 ––– nC VGS = 10V
Qgd Gate-to-Drain Charge ––– 9.5 14 I
D = 5.5A
Qgodr Gate Charge Overdrive ––– 14 –––
Qsw Switch Charge (Qgs2 + Qgd) ––– 11 –––
VDS = 16V, VGS = 0V
td(on) Turn-On Delay Time ––– 16 ––– VDD = 100V, VGS = 10V
tr Rise Time ––– 11 ––– ns ID = 5.5A
td(off) Turn-Off Delay Time ––– 31 ––– RG = 6.2
tf Fall Time ––– 6.5 –––
Ciss Input Capacitance ––– 2290 ––– VGS = 0V
Coss Output Capacitance ––– 240 ––– V
DS = 25V
Crss Reverse Transfer Capacitance ––– 46 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 1780 ––– VGS=0V, VDS=1.0V, ƒ=1.0MHz
Coss Output Capacitance ––– 100 ––– VGS=0V, VDS=160V, ƒ=1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 26 A MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 37 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 5.5A, VGS = 0V
trr Reverse Recovery Time ––– 85 130 ns TJ = 25°C, IF = 5.5A,VDD = 100V
Qrr Reverse Recovery Charge ––– 320 480 nC di/dt = 100A/µs
Thermal Resistance
Parameter Typ. Max. Units
RJA Junction-to-Ambient ––– 45
RJA Junction-to-Ambient 12.5 –––
RJA Junction-to-Ambient 20 –––
°C/W
RJC Junction-to-Case ––– 1.4
RJ-PCB Junction-to-PCB Mounted 1.0 –––
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IRF6641TRPbF
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
110 100 1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss
= C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 5 10 15 20 25 30 35 40
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VGS, Gate-to-Source Voltage (V)
VDS= 160V
VDS= 100V
VDS= 40V
ID= 5.5A
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
0.1 110
VDS, Drain-to-Sour ce Voltage (V)
1
10
100
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
BOTTOM 7. 0V
60µs PULSE WIDTH
Tj = 25°C
7.0V
0.1 110
VDS
, Drain- to-Source Voltag e (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
7.0V
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
10V
8.0V
BOTTOM 7. 0V
2 4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
TJ = 150°C
TJ = 25°C
TJ = -40°C
VDS = 10V
60µs PULSE W IDTH
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Tem per ature (°C)
0.5
1.0
1.5
2.0
2.5
Typical RDS(on) (Normalized)
ID = 5.5A
VGS = 10V
Fig 6. Typical Gate Charge vs Gate-to-Source Voltage
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IRF6641TRPbF
0 1 10 100 1000
VDS, Drain- to- Source Voltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS( on)
Tc = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
Fig 8. Maximum Safe Operating Area
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source- to- Drain Voltage (V)
0
1
10
100
ISD, Reverse Drain Current (A)
TJ = 150°C
TJ = 25°C
TJ = -40°C
VGS = 0V
25 50 75 100 125 150
TA , Ambient Temperatur e ( °C)
0
1
2
3
4
5
ID, Drain Current (A)
Fig 7. Typical Source-Drain Diode Forward Voltage
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100 1000
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
Thermal Response ( Z thJA )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Fig 9. Maximum Drain Current vs. Ambient Temperature
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
2.0
3.0
4.0
5.0
6.0
Typical VGS(th), Gate threshold Voltage (V)
ID = 150µA
ID = 250µA
ID = 1.0m A
ID = 1.0A
Fig 10. Typical Threshold Voltage vs.
Junction Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF6641TRPbF
010 20 30 40 50 60
ID, Drain Current (A)
50
60
70
80
90
100
Typical RDS(on) (m)
TJ = 25°C
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
25 50 75 100 125 150
Starting T J , Junction Temperature ( °C)
0
20
40
60
80
100
120
140
160
180
200
EAS , Single Pulse Avalanche Energy (mJ)
IDTOP
3.7A
5.7A
BOTTOM 11A
4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
0
20
40
60
80
100
120
140
160
180
200
RDS(on)
, Drain-to -Source On Resistance (m
)
ID = 5.5A
TJ = 25°C
TJ = 125°C
Fig 12. Typical On-Resistance vs. Gate Voltage Fig 13. Typical On-Resistance vs. Drain Current
Fig 15a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 14. Maximum Avalanche Energy vs. Drain Current
tp
V
(BR)DSS
I
AS
Fig 15b. Unclamped Inductive Waveforms
Fig 16a. Switching Time Test Circuit Fig 16b. Switching Time Waveforms
Fig 17a. Gate Charge Test Circuit
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 17b. Gate Charge Waveform
VDD
Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
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IRF6641TRPbF
DirectFET® Substrate and PCB Layout, MZ Outline
(Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8 www.irf.com © 2013 International Rectifier July 1, 2013
IRF6641TRPbF
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
DirectFET® Outline Dimension, MZ Outline
(Medium Size Can, D-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all
recommendations for stencil and substrate designs.
DirectFET® Part Marking
IMPERIAL
MAX
0.246
0.189
0.152
0.014
0.027
0.027
0.037
0.025
0.011
0.044
0.100
0.0235
0.0008
0.003
MIN
6.25
4.80
3.85
0.35
0.68
0.68
0.93
0.63
0.28
1.13
2.53
0.616
0.020
0.08
MAX
6.35
5.05
3.95
0.45
0.72
0.72
0.97
0.67
0.32
1.26
2.66
0.676
0.080
0.17
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
DIMENSIONS
METRIC
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.038
0.026
0.013
0.050
0.105
0.0274
0.0031
0.007
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IRF6641TRPbF
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
DirectFET® Tape & Reel Dimension (Showing component orientation).
Qualification Information†
Qualification Level
Moisture Sensitivity Level DirectFET MSL1
(per JEDEC J-STD-020D†††)
RoHS Compliant Yes
Consumer††
(per JEDEC JESD47F) †††
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Starting TJ = 25°C, L = 0.77mH, RG = 25, IAS = 11A.
Surface mounted on 1 in. square Cu board.
Pulse width 400µs; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
80% VDSS.
Used double sided cooling , mounting pad with
large heatsink.
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
TC measured with thermal couple mounted to top
(Drain) of part.
R is measured at TJ of approximately 90°C.
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
CODE
A
B
C
D
E
F
G
H
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
1.60
MIN
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
0.063
DIMENSIONS
METRIC IMPERIAL
LOADED TAPE FEED DIRECTION
STANDARD OPTION (QTY 4800)
MIN
330.0
20.2
12.8
1.5
100.0
N.C
12.4
11.9
CODE
A
B
C
D
E
F
G
H
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
12.992
0.795
0.504
0.059
3.937
N.C
0.488
0.469
MAX
N.C
N.C
0.520
N.C
N.C
0.724
0.567
0.606
METRIC IMPERIAL
TR1 OPTION (QTY 1000)
IMPERIAL
MIN
6.9
0.75
0.53
0.059
2.31
N.C
0.47
0.47
MAX
N.C
N.C
12.8
N.C
N.C
13.50
12.01
12.01
MIN
177.77
19.06
13.5
1.5
58.72
N.C
11.9
11.9
METRIC
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
REEL DIMENSIONS
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6641TRPBF). For 1000 parts on 7"
reel, order IRF6641TR1PBF
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
