Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM50GP120
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate VISOL 2,5 kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier min. typ. max.
Durchlaßspannung
forward voltage Tvj = 150°C, IF = 50 A VF- 1,05 - V
Schleusenspannung
threshold voltage Tvj = 150°C V(TO) - - 0,8 V
Ersatzwiderstand
slope resistance Tvj = 150°C rT- - 6,5 mW
Sperrstrom
reverse current Tvj = 150°C, VR =
1600 V IR-3-mA
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip TC = 25°C RAA'+CC' - 4 - mW
Transistor Wechselrichter/ Transistor Inverter min. typ. max.
Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 50 A VCE sat - 2,2 2,55 V
collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 50 A - 2,5 - V
Gate-Schwellenspannung
gate threshold voltage VCE = VGE, Tvj = 25°C, IC = 2 mA VGE(TO) 4,5 5,5 6,5 V
Eingangskapazität
input capacitance
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V Cies - 3,3 - nF
Kollektor-Emitter Reststrom VGE = 0V, Tvj = 25°C, VCE = 1200 V ICES - 3,0 500 µA
collector-emitter cut-off current VGE = 0V, Tvj =125°C, VCE = 1200 V - 4,0 - mA
Gate-Emitter Reststrom
gate-emitter leakage current VCE = 0V, VGE =20V, Tvj =25°C IGES - - 300 nA
Einschaltverzögerungszeit (ind. Last) IC = INenn, VCC = 600 V
turn on delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 15 Ohm td,on -65-ns
VGE = ±15V, Tvj = 125°C, RG = 15 Ohm - 60 - ns
Anstiegszeit (induktive Last) IC = INenn, VCC = 600 V
rise time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 15 Ohm tr-45-ns
VGE = ±15V, Tvj = 125°C, RG = 15 Ohm - 45 - ns
Abschaltverzögerungszeit (ind. Last) IC = INenn, VCC = 600 V
turn off delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 15 Ohm td,off - 380 - ns
VGE = ±15V, Tvj = 125°C, RG = 15 Ohm - 400 - ns
Fallzeit (induktive Last) IC = INenn, VCC = 600 V
fall time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 15 Ohm tf-10-ns
VGE = ±15V, Tvj = 125°C, RG = 15 Ohm - 30 - ns
Einschaltverlustenergie pro Puls IC = INenn, VCC = 600 V
turn-on energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 15 Ohm Eon - 6,5 - mWs
L S = 50 nH
Abschaltverlustenergie pro Puls IC = INenn, VCC = 600 V
turn-off energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 15 Ohm Eoff - 6 - mWs
L S = 50 nH
Kurzschlußverhalten tP £ 10µs, VGE £ 15V, RG = 15 Ohm
SC Data Tvj£125°C, VCC =720 V ISC - 300 - A
dI/dt = 4000 A/µs
2(11)
DB-PIM-10.xls