REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
a
LC
2
MOS 4-/8-Channel
High Performance Analog Multiplexers
ADG408/ADG409
FEATURES
44 V Supply Maximum Ratings
VSS to VDD Analog Signal Range
Low On Resistance (100 V max)
Low Power (ISUPPLY < 75 mA)
Fast Switching
Break-Before-Make Switching Action
Plug-in Replacement for DG408/DG409
APPLICATIONS
Audio and Video Routing
Automatic Test Equipment
Data Acquisition Systems
Battery Powered Systems
Sample and Hold Systems
Communication Systems
GENERAL DESCRIPTION
The ADG408 and ADG409 are monolithic CMOS analog
multiplexers comprising eight single channels and four differen-
tial channels respectively. The ADG408 switches one of eight
inputs to a common output as determined by the 3-bit binary
address lines A0, A1 and A2. The ADG409 switches one of four
differential inputs to a common differential output as deter-
mined by the 2-bit binary address lines A0 and A1. An EN
input on both devices is used to enable or disable the device.
When disabled, all channels are switched OFF.
The ADG408/ADG409 are designed on an enhanced LC
2
MOS
process which provides low power dissipation yet gives high
switching speed and low on resistance. Each channel conducts
equally well in both directions when ON and has an input signal
range that extends to the supplies. In the OFF condition, signal
levels up to the supplies are blocked. All channels exhibit break-
before-make switching action, preventing momentary shorting
when switching channels. Inherent in the design is low charge
injection for minimum transients when switching the digital
inputs.
The ADG408/ADG409 are improved replacements for the
DG408/DG409 Analog Multiplexers.
PRODUCT HIGHLIGHTS
1. Extended Signal Range
The ADG408/ADG409 are fabricated on an enhanced
LC
2
MOS process giving an increased signal range that
extends to the supply rails.
2. Low Power Dissipation
3 Low R
ON
4. Single Supply Operation
For applications where the analog signal is unipolar, the
ADG408/ADG409 can be operated from a single rail power
supply. The parts are fully specified with a single +12 V
power supply and will remain functional with single supplies
as low as +5 V.
FUNCTIONAL BLOCK DIAGRAMS
ADG408
1 OF 8
DECODER
S1
S8
D
A0 A1 A2 EN
ADG409
1 OF 4
DECODER
S1A
S4B
DA
A0 A1 EN
DB
S4A
S1B
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 1998
ADG408/ADG409–SPECIFICATIONS
DUAL SUPPLY
1
B Version T Version
–408C to –558C to
Parameter +258C +858C +258C +1258C Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
SS
to V
DD
V
SS
to V
DD
V
R
ON
40 40 Ω typ V
D
= ±10 V, I
S
= –10 mA
100 125 100 125 Ω max
∆R
ON
15 15 Ω max V
D
= +10 V, –10 V
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF) ±0.5 ±50 ±0.5 ±50 nA max V
D
= ±10 V, V
S
= 710 V;
Test Circuit 2
Drain OFF Leakage I
D
(OFF) V
D
= ±10 V; V
S
= 710 V;
ADG408 ±1±100 ±1±100 nA max Test Circuit 3
ADG409 ±1±50 ±1±50 nA max
Channel ON Leakage I
D
, I
S
(ON) V
S
= V
D
= ±10 V;
ADG408 ±1±100 ±1±100 nA max Test Circuit 4
ADG409 ±1±50 ±1±50 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 2.4 V min
Input Low Voltage, V
INL
0.8 0.8 V max
Input Current
I
INL
or I
INH
±10 ±10 µA max V
IN
= 0 or V
DD
C
IN
, Digital Input Capacitance 8 8 pF typ f = 1 MHz
DYNAMIC CHARACTERISTICS
2
t
TRANSITION
120 120 ns typ R
L
= 300 Ω, C
L
= 35 pF;
250 250 ns max V
S1
= ±10 V, V
SS
= 710 V;
Test Circuit 5
t
OPEN
10 10 10 10 ns min R
L
= 300 Ω, C
L
= 35 pF;
V
S
= +5 V; Test Circuit 6
t
ON
(EN) 85 125 85 125 ns typ R
L
= 300 Ω, C
L
= 35 pF;
150 225 150 225 ns max V
S
= +5 V; Test Circuit 7
t
OFF
(EN) 65 65 ns typ R
L
= 300 Ω, C
L
= 35 pF;
150 150 ns max V
S
= +5 V; Test Circuit 7
Charge Injection 20 20 pC typ V
S
= 0 V, R
S
= 0 Ω, C
L
= 10 nF;
Test Circuit 8
OFF Isolation –75 –75 dB typ R
L
= 1 kΩ, f = 100 kHz;
V
EN
= 0 V; Test Circuit 9
Channel-to-Channel Crosstalk 85 85 dB typ R
L
= 1 kΩ, f = 100 kHz;
Test Circuit 10
C
S
(OFF) 11 11 pF typ f = 1 MHz
C
D
(OFF) f = 1 MHz
ADG408 40 40 pF typ
ADG409 20 20 pF typ
C
D
, C
S
(ON) f = 1 MHz
ADG408 54 54 pF typ
ADG409 34 34 pF typ
POWER REQUIREMENTS
I
DD
11µA typ V
IN
= 0 V, V
EN
= 0 V
55µA max
I
SS
11µA typ
55µA max
I
DD
100 100 µA typ V
IN
= 0 V, V
EN
= 2.4 V
200 500 200 500 µA max
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. A
–2–
(VDD = +15 V, VSS = –15 V, GND = 0 V, unless otherwise noted)
–3–
REV. A
ADG408/ADG409
SINGLE SUPPLY
1
B Version T Version
–408C to –558C to
Parameter +258C +858C +258C +1258C Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 to V
DD
0 to V
DD
V
R
ON
90 90 Ω typ V
D
= +3 V, +10 V, I
S
= –1 mA
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF) ±0.5 ±50 ±0.5 ±50 nA max V
D
=8 V/0 V, V
S
= 0 V/8 V;
Test Circuit 2
Drain OFF Leakage I
D
(OFF) V
D
=8 V/0 V, V
S
= 0 V/8 V;
ADG408 ±1±100 ±1±100 nA max Test Circuit 3
ADG409 ±1±50 ±1±50 nA max
Channel ON Leakage I
D
, I
S
(ON) V
S
= V
D
= 8 V/0 V;
ADG408 ±1±100 ±1±100 nA max Test Circuit 4
ADG409 ±1±50 ±1±50 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 2.4 V min
Input Low Voltage, V
INL
0.8 0.8 V max
Input Current
I
INL
or I
INH
±10 ±10 µA max V
IN
= 0 or V
DD
C
IN
, Digital Input Capacitance 8 8 pF typ f = 1 MHz
DYNAMIC CHARACTERISTICS
2
t
TRANSITION
130 130 ns typ R
L
= 300 Ω, C
L
= 35 pF;
V
S1
= 8 V/0 V, V
S8
= 0 V/8 V;
Test Circuit 5
t
OPEN
10 10 ns typ R
L
= 300 Ω, C
L
= 35 pF;
V
S
= +5 V; Test Circuit 6
t
ON
(EN) 140 140 ns typ R
L
= 300 Ω, C
L
= 35 pF;
V
S
= +5 V; Test Circuit 7
t
OFF
(EN) 60 60 ns typ R
L
= 300 Ω, C
L
= 35 pF;
V
S
= +5 V; Test Circuit 7
Charge Injection 5 5 pC typ V
S
= 0 V, R
S
= 0 Ω, C
L
= 10 nF;
Test Circuit 8
OFF Isolation –75 –75 dB typ R
L
= 1 kΩ, f = 100 kHz;
V
EN
= 0 V; Test Circuit 9
Channel-to-Channel Crosstalk 85 85 dB typ R
L
= 1 kΩ, f = 100 kHz;
Test Circuit 10
C
S
(OFF) 11 11 pF typ f = 1 MHz
C
D
(OFF) f = 1 MHz
ADG408 40 40 pF typ
ADG409 20 20 pF typ
C
D
, C
S
(ON) f = 1 MHz
ADG408 54 54 pF typ
ADG409 34 34 pF typ
POWER REQUIREMENTS
I
DD
11µA typ V
IN
= 0 V, V
EN
= 0 V
55µA max
I
DD
100 100 µA typ V
IN
= 0 V, V
EN
= 2.4 V
200 500 200 500 µA max
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +12 V, VSS = 0 V, GND = 0 V, unless otherwise noted)
ADG408/ADG409
REV. A
–4–
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= +25°C unless otherwise noted)
V
DD
to V
SS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+44 V
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +25 V
V
SS
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –25 V
Analog, Digital Inputs
2
. . . . . V
SS
–2 V to V
DD
+2 V or 20 mA,
Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 20 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle max) . . . . . . . . . . . 40 mA
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . . –55°C to +125°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Cerdip Package, Power Dissipation . . . . . . . . . . . . . . . 900 mW
θ
JA
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 76°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +300°C
Plastic Package, Power Dissipation . . . . . . . . . . . . . . . 470 mW
θ
JA
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 117°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +260°C
TSSOP Package, Power Dissipation . . . . . . . . . . . . . . 450 mW
θ
JA
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 155°C/W
θ
JC
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 50°C/W
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 600 mW
θ
JA
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 77°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at A, EN, S or D will be clamped by internal diodes. Current should
be limited to the maximum ratings given.
ORDERING INFORMATION
Model
1
Temperature Range Package Option
2
ADG408BN –40°C to +85°C N-16
ADG408BR –40°C to +85°C R-16A
ADG408BRU –40°C to +85°C RU-16
ADG408TQ –55°C to +125°C Q-16
ADG409BN –40°C to +85°C N-16
ADG409BR –40°C to +85°C R-16A
ADG409TQ –55°C to +125°C Q-16
NOTES
1
To order MIL-STD-883, Class B processed parts, add /883B to T grade part
numbers.
2
N = Plastic DIP; Q = Cerdip; R = 0.15" Small Outline IC (SOIC);
RU = Think Shrink Small Outline Package (TSSOP).
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG408/ADG409 feature proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy electrostatic discharges. Therefore,
proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ADG408/ADG409
REV. A –5–
TERMINOLOGY
V
DD
Most positive power supply potential.
V
SS
Most negative power supply potential in dual
supplies. In single supply applications, it may
be connected to ground.
GND Ground (0 V) reference.
R
ON
Ohmic resistance between D and S.
∆R
ON
Difference between the R
ON
of any two
channels.
I
S
(OFF) Source leakage current when the switch is off.
I
D
(OFF) Drain leakage current when the switch is off.
I
D
, I
S
(ON) Channel leakage current when the switch is on.
V
D
(V
S
) Analog voltage on terminals D, S.
C
S
(OFF) Channel input capacitance for “OFF”
condition.
C
D
(OFF) Channel output capacitance for “OFF”
condition.
C
D
, C
S
(ON) “ON” switch capacitance.
C
IN
Digital input capacitance.
t
ON
(EN) Delay time between the 50% and 90% points of
the digital input and switch “ON” condition.
t
OFF
(EN) Delay time between the 50% and 90% points of
the digital input and switch “OFF” condition.
t
TRANSITION
Delay time between the 50% and 90% points of
the digital inputs and the switch “ON” condition
when switching from one address state to another.
t
OPEN
“OFF” time measured between the 80% point
of both switches when switching from one
address state to another.
V
INL
Maximum input voltage for Logic “0.”
V
INH
Minimum input voltage for Logic “1.”
I
INL
(I
INH
) Input current of the digital input.
Crosstalk A measure of unwanted signal which is coupled
through from one channel to another as a result
of parasitic capacitance.
Off Isolation A measure of unwanted signal coupling through
an “OFF” channel.
Charge A measure of the glitch impulse transferred
Injection from the digital input to the analog output
during switching.
I
DD
Positive supply current.
I
SS
Negative supply current.
PIN CONFIGURATIONS (DIP/SOIC/TSSOP)
TOP VIEW
(Not to Scale)
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
A0
EN
V
SS
S1
S2
S3
S4
D
A1
A2
GND
V
DD
S5
S6
S7
S8
ADG408
TOP VIEW
(Not to Scale)
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
A0
EN
V
SS
S1A
S2A
S3A
S4A
DA
A1
GND
V
DD
S1B
S2B
S3B
S4B
DB
ADG409
ADG408 Truth Table
ON
A2 A1 A0 EN SWITCH
X X X 0 NONE
00011
00112
01013
01114
10015
10116
11017
11118
ADG409 Truth Table
ON SWITCH
Al A0 EN PAIR
X X 0 NONE
0011
0112
1013
1114
ADG408/ADG409
REV. A
–6–
Typical Performance Characteristics
VD (VS) – Volts
120
20
–15 15–10
RON – V
–5 0 5 10
80
40
100
60
VDD = +10V
VSS = –10V
VDD = +5V
VSS = –5V
VDD = +12V
VSS = –12V
VDD = +15V
VSS = –15V
TA = +258C
Figure 1. R
ON
as a Function of V
D
(V
S
): Dual Supply Voltage
V
D
(V
S
) – Volts
100
30
–15 15–10
R
ON
– V
–5 0 5 10
80
70
50
40
60
90
+1258C
+858C
+258C
V
DD
= +15V
V
SS
= –15V
Figure 2. R
ON
as a Function of V
D
(V
S
) for Different
Temperatures
V
D
(V
S
) – Volts
0.2
–0.2
LEAKAGE CURRENT – nA
0
–0.1
0.1
–15 15–10 –5 0 5 10
T
A
= +258C
V
DD
= +15V
V
SS
= –15V
I
S
(OFF)
I
D
(ON)
I
D
(OFF)
Figure 3. Leakage Currents as a Function of V
D
(V
S
)
V
D
(V
S
) – Volts
180
400153
R
ON
– V
6912
140
120
80
60
160
100
T
A
= +258C
V
DD
= +5V
V
SS
= 0V
V
DD
= +12V
V
SS
= 0V
V
DD
= +15V
V
SS
= 0V
V
DD
= +10V
V
SS
= 0V
Figure 4. R
ON
as a Function of V
D
(V
S
): Single Supply
Voltage
V
D
(V
S
) – Volts
130
600122
R
ON
– V
46810
100
80
70
90
120
V
DD
= +12V
V
SS
= 0V
+1258C
+858C
+258C
110
Figure 5. R
ON
as a Function of V
D
(V
S
) for Different
Temperatures
V
D
(V
S
) – Volts
0.04
–0.060122
LEAKAGE CURRENT – nA
46810
0
–0.04
0.02
–0.02
T
A
= +258C
V
DD
= +12V
V
SS
= 0V
I
S
(OFF)
I
D
(ON)
I
D
(OFF)
Figure 6. Leakage Currents as a Function of V
D
(V
S
)
ADG408/ADG409
REV. A –7–
V
IN
– Volts
120
201153
t – ns
5791113
60
40
100
80
V
DD
= +15V
V
SS
= –15V
t
TRANSITION
t
ON
(EN)
t
OFF
(EN)
Figure 7. Switching Time vs. V
IN
(Bipolar Supply)
VSUPPLY – Volts
400
05157
t – ns
91113
200
100
300
VIN = +5V
tTRANSITION
tON (EN)
tOFF (EN)
Figure 8. Switching Time vs. Single Supply
FREQUENCY – Hz
10
4
10
3
10
2
I
DD
– mA
10M10 100 1k 10k 100k 1M
V
DD
= +15V
V
SS
= –15V
EN = 2.4V
EN = 0V
Figure 9. Positive Supply Current vs. Switching Frequency
V
IN
– Volts
140
401133
t – ns
57911
100
60
120
80
V
DD
= +12V
V
SS
= 0V t
TRANSITION
t
ON
(EN)
t
OFF
(EN)
Figure 10. Switching Time vs. V
IN
(Single Supply)
V
SUPPLY
– Volts
300
0
6561567
t – ns
69611 613
200
100
V
IN
= +5V
t
TRANSITION
t
ON
(EN)
t
OFF
(EN)
Figure 11. Switching Time vs. Bipolar Supply
EN = 0V
FREQUENCY – Hz
10
4
10
3
10
–1
10M1M10
I
SS
– mA
100 1k 10k 100k
10
2
10
1
10
0
V
DD
= +15V
V
SS
= –15V
EN = 2.4V
Figure 12. Negative Supply Current vs. Switching
Frequency
ADG408/ADG409
REV. A
–8–
FREQUENCY – Hz
110
70 1k 1M10k
OFF ISOLATION – dB
100k
90
80
100
V
DD
= +15V
V
SS
= –15V
Figure 13. Off Isolation vs. Frequency
V
DD
= +15V
V
SS
= –15V
FREQUENCY – Hz
110
70
1k 1M10k
CROSSTALK – dB
100k
90
80
100
60
Figure 14. Crosstalk vs. Frequency
Test Circuits
I
DS
V1
SD
V
S
R
ON
= V1/I
DS
Test Circuit 1. On Resistance
S1
D
S2
S8
A
EN
GND
V
DD
V
SS
V
DD
V
SS
+0.8V
V
D
V
S
I
S
(OFF)
Test Circuit 2. I
S
(OFF)
S1
D
S2
S8 A
EN
GND
V
DD
V
SS
V
DD
V
SS
+0.8V
V
D
V
S
I
D
(OFF)
Test Circuit 3. I
D
(OFF)
S1 D
S8 A
EN
GND
VDD VSS
VDD VSS
2.4V
VD
VS
ID (ON)
Test Circuit 4. I
D
(ON)
ADG408/ADG409
REV. A –9–
V
DD
V
SS
V
DD
V
SS
V
S1
V
S8
OUTPUT
ADG408*
A0
A1
A2
50V
V
IN
2.4V EN
GND
S1
S2 THRU S7
S8
D
300V35pF
*SIMILAR CONNECTION FOR ADG409
3V
0V
ENABLE
DRIVE (V
IN
)
t
TRANSITION
t
TRANSITION
OUTPUT
50% 50%
90%
90%
t
r
< 20ns
t
f
< 20ns
Test Circuit 5. Switching Time of Multiplexer, t
TRANSlTlON
VDD VSS
VDD VSS
VS
OUTPUT
ADG408*
A0
A1
A2
50V
VIN
2.4V EN
GND
S1
S2 THRU S7
S8
D
300V35pF
*SIMILAR CONNECTION FOR ADG409
3V
0V
ADDRESS
DRIVE (VIN)
OUTPUT 80%80%
tOPEN
Test Circuit 6. Break-Before-Make Delay, t
OPEN
V
DD
V
SS
V
DD
V
SS
V
S
OUTPUT
ADG408*
A0
A1
A2
EN
GND
S1
S2 THRU S8
D
300V35pF
*SIMILAR CONNECTION FOR ADG409
50V
V
IN
3V
0V
ENABLE
DRIVE (V
IN
)
OUTPUT
50% 50%
t
ON
(EN) t
OFF
(EN)
0.9V
O
0.9V
O
Test Circuit 7. Enable Delay, t
ON
(EN), t
OFF
(EN)
ADG408/ADG409
REV. A
–10–
V
DD
V
SS
V
DD
V
SS
ADG408*
A0
A1
A2
EN
GND
D
*SIMILAR CONNECTION FOR ADG409
V
IN
V
OUT
S
C
L
10nF
R
S
V
S
D V
OUT
3V
V
IN
V
OUT
Q
INJ
= C
L
3 D V
OUT
Test Circuit 8. Charge Injection
V
DD
V
SS
V
DD
V
SS
ADG408
A0
A1
A2
EN GND
DV
OUT
S1
V
S
S8
0V
1kV
OFF ISOLATION = 20 LOG V
OUT
/V
IN
Test Circuit 9. OFF Isolation
V
DD
V
SS
V
DD
V
SS
ADG408
A0
A1
A2
EN
GND
D
S1
V
S
S8
V
OUT
1kV
CROSSTALK = 20 LOG V
OUT
/V
IN
S2
1kV
2.4V
Test Circuit 10. Channel-to-Channel Crosstalk
ADG408/ADG409
REV. A –11–
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
Plastic DIP (N-16)
16
18
9
PIN 1
0.87 (22.1) MAX
0.25
(6.35) 0.31
(7.87)
SEATING
PLANE
0.100
(2.54)
BSC
0.18
(4.57)
0.035
(0.89)
0.125
(3.18)
MIN
0.018
(0.46) 0.033
(0.84)
0.18
(4.57)
MAX
0.3 (7.62)
0.011
(0.28)
Cerdip (Q-16)
16
18
9
0.310 (7.87)
0.220 (5.59)
PIN 1
0.005 (0.13) MIN 0.080 (2.03) MAX
SEATING
PLANE
0.022 (0.558)
0.014 (0.356)
0.200 (5.08)
MAX
0.840 (21.34) MAX
0.150
(3.81)
MIN
0.070 (1.78)
0.030 (0.76)
0.200 (5.08)
0.125 (3.18) 0.100
(2.54)
BSC
0.060 (1.52)
0.015 (0.38)
15°
0°
0.320 (8.13)
0.290 (7.37)
0.015 (0.38)
0.008 (0.20)
SO (Narrow Body) (R-16A)
16 9
81
0.3937 (10.00)
0.3859 (9.80)
0.2440 (6.20)
0.2284 (5.80)
0.1574 (4.00)
0.1497 (3.80)
PIN 1
SEATING
PLANE
0.0098 (0.25)
0.0040 (0.10)
0.0192 (0.49)
0.0138 (0.35)
0.0688 (1.75)
0.0532 (1.35)
0.0500
(1.27)
BSC 0.0099 (0.25)
0.0075 (0.19) 0.0500 (1.27)
0.0160 (0.41)
8°
0°
0.0196 (0.50)
0.0099 (0.25) x 45°
Thin Shrink Small Outline Package (TSSOP)
(RU-16)
16 9
8
1
0.201 (5.10)
0.193 (4.90)
0.256 (6.50)
0.246 (6.25)
0.177 (4.50)
0.169 (4.30)
PIN 1
SEATING
PLANE
0.006 (0.15)
0.002 (0.05)
0.0118 (0.30)
0.0075 (0.19)
0.0256
(0.65)
BSC
0.0433
(1.10)
MAX
0.0079 (0.20)
0.0035 (0.090)
0.028 (0.70)
0.020 (0.50)
8°
0°
C1824a–0–4/98
PRINTED IN U.S.A.
