VOW3120
www.vishay.com Vishay Semiconductors
Rev. 1.0, 27-Jan-14 1Document Number: 82442
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Wide Body 2.5 A IGBT and MOSFET Driver
DESCRIPTION
The VOW3120 consists of an infrared light emitting diode
optically coupled to an integrated circuit with a power
output stage. This optocoupler is ideally suited for driving
power IGBTs and MOSFETs used in motor control and
inverter applications. The high operating voltage range of
the output stage provides the drive voltages required by
gate controlled devices. The voltage and current supplied by
this optocoupler makes it ideally suited for directly driving
IGBTs with ratings up to 1200 V/100 A. For IGBTs with
higher ratings, the VOW3120 can be used to drive a discrete
power stage which drives the IGBT gate.
The VOW3120 provides higher isolation for applications
operating at higher working voltages, and or higher pollution
degree criteria. Higher VIORM, VIOTM, creepage and
clearance distances, make the VOW3120 ideal for many
industrial control and power conversion applications.
FEATURES
• 2.5 A minimum peak output current
• 10 mm minimum external creepage distance
• 25 kV/µs minimum common mode rejection
•I
CC = 2.5 mA maximum supply current
• Under voltage lock-out (UVLO) with hysteresis
• Wide operating VCC range: 15 V to 32 V
• 0.2 µs maximum pulse width distortion
• Industrial temperature range: -40 °C to +100 °C
• 0.5 V maximum low level output voltage (VOL)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Industrial welding equipment
• Motor drives
• Industrial inverters
• Commercial and residential solar inverters
• Wind generator inverters
• EV and plug-in HEV chargers
AGENCY APPROVALS
Safety application model number covering all products in
this datasheet is VOW3120. This model number should be
used when consulting safety agency documents.
• UL1577
•cUL
•CQC
• DIN EN 60747-5-5 (VDE 0884-5)
1
2
3
4
8
7
6
5
Shield
A
C
NC
NC
VO
NC
VCC
VEE
V
DE
ORDERING INFORMATION
VOW3 1 2 0 - X 0 # #T
PART NUMBER PACKAGE OPTION TAPE
AND
REEL
PACKAGE UL, cUL, CQC, VDE
SMD-8, 400 mil, option 7, wide-body VOW3120-X017T
10.16 mm typ.
0.75 mm
Option 7
VOW3120
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Rev. 1.0, 27-Jan-14 2Document Number: 82442
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Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Maximum pulse width = 10 µs, maximum duty cycle = 0.2 %. This value is intended to allow for component tolerances for designs with
IO peak minimum = 2.5 A. See applications section for additional details on limiting IOH peak.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Fig. 1 - Dissipated Operating Power vs. Operating Temperature
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Input forward current IF25 mA
Peak transient input current < 1 µs pulse width, 300 pps IF(TRAN) 1A
Reverse input voltage VR5V
Output power dissipation Pdiss 40 mW
LED junction temperature Tj125 °C
OUTPUT
High peak output current (1) IOH(PEAK) 2.5 A
Low peak output current (1) IOL(PEAK) 2.5 A
Supply voltage (VCC - VEE)0 to +35 V
Output voltage VO(PEAK) 0 to +VCC V
Output power dissipation Pdiss 220 mW
Output junction temperature Tj125 °C
OPTOCOUPLER
Isolation test voltage
(between emitter and detector) t = 1 min VISO 5300 VRMS
Storage temperature range Tstg -55 to +150 °C
Ambient operating temperature range Tamb -40 to +100 °C
Total power dissipation Ptot 260 mW
Lead solder temperature (2) For 10 s, 1.6 mm below seating plane Tsld 260 °C
RECOMMENDED OPERATING CONDITION
PARAMETER SYMBOL MIN. MAX. UNIT
Power supply voltage VCC - VEE 15 32 V
Input LED current (on) IF10 mA
Input voltage (off) VF(OFF) -3 0.8 V
Operating temperature Tamb -40 +100 °C
0
25
50
75
100
125
150
175
200
225
250
-40 -20 0 20 40 60 80 100
Ptot - Maximum Power Dissipation (mW)
Tamb - Ambient Temperature (°C)
Output Driver
IR- LED
VOW3120
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Rev. 1.0, 27-Jan-14 3Document Number: 82442
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Note
• The thermal characteristics table above were measured at 25 °C and the thermal model is represented in the thermal network below. Each
resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal
resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation
of the thermal model, please reference Vishay’s Thermal Characteristics of Optocouplers application note.
Note
• Minimum and maximum values were tested over recommended operating conditions (Tamb = -40 °C to +100 °C, IF(ON) = 10 mA to 16 mA,
VF(OFF) = -3 V to 0.8 V, VCC = 15 V to 32 V, VEE = ground) unless otherwise specified. Typical values are characteristics of the device and are
the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. All typical values
were measured at Tamb = 25 °C and with VCC - VEE = 32 V.
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
LED power dissipation PLED 40 mW
Output power dissipation POUT 220 mW
Total power dissipation PTOT 260 mW
Maximum LED junction temperature Tj max. 125 °C
Maximum output die junction temperature Tj max. 125 °C
Thermal resistance, LED to output θED 315 °C/W
Thermal resistance, LED to board θEB 300 °C/W
Thermal resistance, output to board θDB 80 °C/W
Thermal resistance, board to ambient θBA 50 °C/W
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
High level output current VO = (VCC - 4 V) IOH 0.5 A
VO = (VCC - 15 V) IOH 2.5 A
Low level output current VO = (VEE + 2.5 V) IOL 0.5 A
VO = (VEE + 15 V) IOL 2.5 A
High level output voltage IO = -100 mA VOH VCC - 4 V
Low level output voltage IO = 100 mA VOL 0.2 0.5 V
High level supply current Output open, IF = 10 mA to 16 mA ICCH 2.5 mA
Low level supply current Output open, VF = -3 V to +0.8 V ICCL 2.5 mA
Threshold input current low to high IO = 0 mA, VO > 5 V IFLH 3.4 8 mA
Threshold input voltage high to low VFHL 0.8 V
Input forward voltage IF = 10 mA VF1 1.36 1.6 V
Temperature coefficient of forward voltage IF = 10 mA ΔVF/ΔTamb -1.4 mV/°C
Input reverse breakdown voltage IR = 10 µA V(BR) 5V
Input capacitance f = 1 MHz, VF = 0 V CIN 45 pF
UVLO threshold VO ≥ 5 V, IF = 10 mA VUVLO + 11 13.5 V
VUVLO - 9.5 12 V
UVLO hysteresis UVLOHYS 1.6 V
Capacitance (Input to Output) f = 1 MHz, VF = 0 V CIO 0.9 pF
TJE TJD
TJB
θ
DB
θ
EB
θ
BA
Tamb
θ
ED
VOW3120
www.vishay.com Vishay Semiconductors
Rev. 1.0, 27-Jan-14 4Document Number: 82442
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Minimum and maximum values were tested over recommended operating conditions (Tamb = -40 °C to +100 °C, IF(ON) = 10 mA to 16 mA,
VF(OFF) = -3 V to 0.8 V, VCC = 15 V to 32 V, VEE = ground) unless otherwise specified. Typical values are characteristics of the device and are
the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. All typical values
were measured at Tamb = 25 °C and with VCC - VEE = 32 V.
Fig. 2 - tPLH, tPHL, tr and tf Test Circuit and Waveforms
Note
• Minimum and maximum values were tested over recommended operating conditions (Tamb = -40 °C to +100 °C, IF(ON) = 10 mA to 16 mA,
VF(OFF) = -3 V to 0.8 V, VCC = 15 V to 32 V, VEE = ground) unless otherwise specified. Typical values are characteristics of the device and are
the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. All typical values
were measured at Tamb = 25 °C and with VCC - VEE = 32 V.
Fig. 3 - CMR Test Circuit and Waveforms
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Propagation delay time to logic low output Rg = 10 Ω, Cg = 10 nF, f = 10 kHz, duty cycle = 50 % tPHL 0.1 0.25 0.5 µs
Propagation delay time to logic high output Rg = 10 Ω, Cg = 10 nF, f = 10 kHz, duty cycle = 50 % tPLH 0.1 0.25 0.5 µs
Pulse width distortion Rg = 10 Ω, Cg = 10 nF, f = 10 kHz, duty cycle = 50 % PWD 0.3 µs
Rise time Rg = 10 Ω, Cg = 10 nF, f = 10 kHz, duty cycle = 50 % tr0.1 µs
Fall time Rg = 10 Ω, Cg = 10 nF, f = 10 kHz, duty cycle = 50 % tf0.1 µs
UVLO turn on delay VO > 5 V, IF = 10 mA TUVLO-ON 0.8 µs
UVLO turn off delay VO < 5 V, IF = 10 mA TUVLO-OFF 0.6 µs
COMMON MODE TRANSIENT IMMUNITY
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Common mode transient immunity at
logic high output
Tamb = 25 °C, IF = 10 mA to 16 mA,
VCM = 1500 V, VCC = 32 V |CMH|25 50 kV/µs
Common mode transient immunity at
logic low output
Tamb = 25 °C, VCM = 1500 V,
VCC = 32 V, VF = 0 V |CML|25 45 kV/µs
20979-3
1
3
2
45
7
6
8
0.1 µF
I = 7 mA to 16 mA
F
V = 15 V
to 32 V
CC
10 Ω
500 Ω
10 kHz
50 % Duty
Cycle
I
F
t
r
t
PLH t
PHL
OUT
90 %
50 %
10 %
t
f
VO
10 nF
+
+
20980-3
1
3
2
45
7
6
8
5 V
0 V
0.1 µF
A
V
O
V
O
V = 1500 V
CM
V = 32 V
CC V
OH
V
OL
V
O
Switch at A: I
F
= 10 mA
Switch at B: I
F
= 0 mA
dV
dt
Δt
Δt
V
CM
+
+
+
I
F
=
R
VOW3120
www.vishay.com Vishay Semiconductors
Rev. 1.0, 27-Jan-14 5Document Number: 82442
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• As per IEC 60747-5-5, §7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Fig. 4 - Safety Power Dissipation vs. Ambient Temperature Fig. 5 - Safety Input Current vs. Ambient Temperature
SAFETY AND INSULATION RATINGS
PARAMETER SYMBOL VALUE UNIT
MAXIMUM SAFETY RATINGS
Output safety power PSO 800 mW
Input safety current Isi 350 mA
Safety temperature TS175 °C
Comparative tracking index CTI 250
INSULATION RATED PARAMETERS
Maximum withstanding isolation voltage t = 1 min VISO 5300 VRMS
Maximum transient isolation voltage VIOTM 8000 Vpeak
Maximum repetitive peak isolation voltage VIORM 1414 Vpeak
Insulation resistance Tamb = 25 °C, VDC = 500 V RIO ≥ 1012 Ω
Isolation resistance Tamb = 100 °C, VDC = 500 V RIO ≥ 1011 Ω
Input to output test voltage, method b VIORM x 1.875 = VPR, 100 % production test with tM = 1 s,
partial discharge < 5 pC VPR 2651 Vpeak
Input to output test voltage, method a VIORM x 1.6 = VPR, 100 % production test with tM = 10 s,
partial discharge < 5 pC VPR 2262 Vpeak
Climatic classification (according to IEC 68 part 1) 40/110/21
Environment (pollution degree in accordance to DIN VDE 0109) 2
Clearance distance (DIP-8 wide body) ≥ 10 mm
Creepage distance (DIP-8 wide body) ≥ 10 mm
Insulation thickness DTI ≥ 0.4 mm
0
100
300
400
500
600
700
800
900
Safety Power Output (mW)
-55
Ambient Temperature (°C)
1551259565355-25 185
200
0
50
100
150
200
250
300
350
400
Safety Input Current (mA)
-55
Ambient Temperature (°C)
1551259565355-25 185
VOW3120
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Rev. 1.0, 27-Jan-14 6Document Number: 82442
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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 6 - High Output Voltage Drop vs. Ambient Temperature
Fig. 7 - Output High Current vs. Ambient Temperature
Fig. 8 - Low Level Output Voltage vs. Ambient Temperature
Fig. 9 - Output Low Current vs. Ambient Temperature
Fig. 10 - Output Low Voltage vs. Output Low Current
Fig. 11 - Output High Voltage vs. Output High Current
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
-40 -20 0 20 40 60 80 100
(VOH-VCC) - High Output Voltage Drop (V)
Tamb - Ambient Temperature (°C)
IOUT = -100 mA
VEE = 0 V
VCC = 15 V to 32 V
IF = 7 mA to 16 mA
1.0
1.5
2.0
2.5
3.0
-40 -20 0 20 40 60 80 100
IOH - Output High Current (A)
Tamb - Ambient Temperature (°C)
VCC = 15 V to 32 V
VOUT = VCC - 4 V
IF = 16 mA
0.1
0.2
0.3
0.4
0.5
-40 -20 0 20 40 60 80 100
VOL - Low Level Output Voltage (V)
Tamb - Ambient Temperature (°C)
VF(OFF) = -3.0 V to 0.8 V
VEE = 0 V
VCC = 15 V to 32 V
IOL = 100 mA
1.0
1.5
2.0
2.5
3.0
-40 -20 0 20 40 60 80 100
IOL - Output Low Current (A)
Tamb - Ambient Temperature (°C)
VCC = 15 V to 32 V
VOUT = 2.5 V
VF(OFF) = -3 V to 0.8 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0 0.5 1.0 1.5 2.0 2.5
VOL - Output Low Voltage (V)
IOL - Output Low Current (A)
100 °C
25 °C
-40 °C
VCC = 15 V to 32 V
VEE = 0 V
VF(OFF) = -3.0 V to 0.8 V
-6
-5
-4
-3
-2
-1
0.0 0.5 1.0 1.5 2.0 2.5
VOH - VCC - Output High Voltage (V)
IOH - Output High Current (A)
100 °C
-40 °C
25 °C
VCC = 15 V to 32 V
IF = 7 mA to 16 mA
VEE = 0 V
VOW3120
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Fig. 12 - Supply Current vs. Ambient Temperature
Fig. 13 - Supply Current vs. Supply Voltage
Fig. 14 - threshold Current vs. Ambient Temperature
Fig. 15 - Output Low Voltage vs. Forward Current
Fig. 16 - Propagation Delay vs. Supply Voltage
Fig. 17 - Propagation Delay vs. Ambient Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-40 -20 0 20 40 60 80 100
ICC - Supply Current (mA)
Tamb - Ambient Temperature (°C)
ICCL
ICCH
VCC = 32 V
IF = 10 mA for ICCH
IF = 0 mA for ICCL
0.5
1.0
1.5
2.0
2.5
15 20 25 30
ICC - Supply Current (mA)
VCC - Supply Voltage (V)
ICCL
ICCH
Tamb = 25 °C
IF = 10 mA for ICCH
IF = 0 mA for ICCL
0
1
2
3
4
5
-40 -20 0 20 40 60 80 100
IFHL/FLH - Threshold Current (mA)
Tamb - Ambient Temperature (°C)
IFHL
IFLH
VCC = 15 V to 32 V
0
5
10
15
20
25
30
0 1 2 3 4 5
VO - Output Voltage (V)
IF - Forward Current (mA)
100
200
300
400
500
15 20 25 30
t
p
- Propagation Delay (ns)
V
CC
- Supply Voltage (V)
tPLH
tPHL
IF = 10 mA, Tamb = 25 °C,
Rg = 10 Ω, Cg = 10 nF,
f = 10 kHz, Duty cycle = 50 %
100
200
300
400
500
-40 -20 0 20 40 60 80 100
tp - Propagation Delay (ns)
Tamb - Ambient Temperature (°C)
tpHL
tpLH
VCC = 32 V, IF = 10 mA ,
Rg = 10 Ω, Cg = 10 nF,
f = 10 kHz, Duty cycle = 50 %
VOW3120
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Fig. 18 - Propagation Delay vs. Forward Current
Fig. 19 - Propagation Delay vs. Series Load Resistance
Fig. 20 - Propagation Delay vs. Series Load Capacitance
Fig. 21 - Forward Current vs. Forward Voltage
100
200
300
400
500
5.0 7.5 10.0 12.5 15.0
tp - Propagation Delay (ns)
IF - Forward Current (mA)
tPLH
tPHL
VCC = 32 V, Tamb = 25 °C,
Rg = 10 Ω, Cg = 10 nF
f = 10 kHz, Duty cycle = 50 %
100
200
300
400
500
0 10 20 30 40 50
t
p
- Propagation Delay (ns)
R
g
- Series Load Resistance ()
tPLH
tPHL
IF = 9 mA, VCC = 32 V,
Tamb = 25 °C, Cg = 10 nF
f = 10 kHz, Duty cycle = 50 %
100
200
300
400
500
0 20 40 60 80 100
tp - Propagation Delay (ns)
Cg - Series Load Capacitance (nF)
tPLH
tPHL
IF = 9 mA, VCC = 32 V,
Tamb = 25 °C, Rg = 10 Ω,
f = 10 kHz, duty cycle = 50 %
1
10
100
1.0 1.2 1.4 1.6 1.8
IF - Forward Current (mA)
VF - Forward Voltage (V)
Tamb = 25 °C
VOW3120
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PACKAGE DIMENSIONS in millimeters
SMD-8, wide-body (Option 7)
PACKAGE MARKING (Example of VOW3120-X017T)
Notes
• The VDE logo is only marked on option 1 parts.
• Tape and reel (T) and package option (option 7) are not part of the package markings.
VOW3120
V YWW 68
VOW3120
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PACKING INFORMATION (Tape and Reel)
Fig. 22 - Tape and Reel Shipping Medium
Fig. 23 - Tape and Reel Packing Option 7 (750 parts per reel)
Top cover tape
Embossment
Embossed carrier
17998
