Advanced Technical Information HiPerFETTM Power Mosfet FMM 75-01F ID25 VDSS RDSon -Phaseleg Topologyin ISOPLUS i4-PACTM = 75 A = 100 V = 25 mW 1 5 MOSFETs Features Conditions VDSS TVJ = 25C to 150C Maximum Ratings VGS ID25 ID90 TC = 25C TC = 90C IF25 IF90 (diode) TC = 25C (diode) TC = 90C dv/dt VDS < VDSS; IF 300A;odiF/dto 100A/s; RG = 2 W TVJ = 150C EAR TC = 25C Symbol Conditions V 20 V 75 50 A A 100 60 A A 5 V/ns 30 mJ Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. RDSon VGS = 10 V; ID = ID90 VGSth VDS = 20 V; ID = 4 mA; IDSS VDS = VDSS; VGS = 0 V; TVJ = 25C TVJ = 125C IGSS 100 25 mW 2 4 0.25 VGS = 20 V; VDS = 0 V Qg Qgs Qgd VGS= 10 V; VDS = 0.5 * VDSS; ID = ID90 td(on) tr td(off) tf VGS= 10 V; VDS = 0.5 * VDSS; ID = ID90; RG = 2 W 180 35 85 nC nC nC 20 60 80 60 ns ns ns ns (diode) IF = 75 A; VGS = 0 V 1.2 trr (diode) IF = 37.5 A; -di/dt = 100 A/s; VDS = 25 V 300 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 0.3 mA mA Applications * drives and power supplies * battery or fuel cell powered * automotive, industrial vehicle etc. * secondary side of mains power supplies 200 nA VF RthJC V * HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode * ISOPLUS i4-PACTM package - isolated back surface - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline 1.5 V ns 0.5 K/W 022 Symbol 1-2 FMM 75-01F Component Symbol Dimensions in mm (1 mm = 0.0394") Conditions Maximum Ratings TVJ Tstg VISOL IISOL 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions dS,dA dS,dA pin - pin pin - backside metal RthCH with heatsink compound Weight (c) 2000 IXYS All rights reserved -55...+150 -55...+125 C C 2500 V~ 20...120 N Characteristic Values min. typ. max. 1.7 5.5 mm mm 0.15 K/W 9 g 2-2