© 2000 IXYS All rights reserved 1 - 2
022
IXYS reserves the right to change limits, test conditions and dimensions.
ID25 = 75 A
VDSS = 100 V
RDSon = 25 mW
HiPerFETTM
Power Mosfet
-Phaseleg Topology-
in ISOPLUS i4-PACTM
1
5
Advanced Technical Information
FMM 75-01F
Features
• HiPerFETTM technology
- low RDSon
- low gate charge for high frequency
operation
- unclamped inductive switching (UIS)
capability
- dv/dt ruggedness
- fast intrinsic reverse diode
• ISOPLUS i4-PACTM package
- isolated back surface
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
Applications
• drives and power supplies
• battery or fuel cell powered
• automotive, industrial vehicle etc.
• secondary side of mains power
supplies
MOSFETs
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C to 150°C 100 V
VGS ±20 V
ID25 TC = 25°C 75 A
ID90 TC = 90°C 50 A
IF25 (diode) TC = 25°C 100 A
IF90 (diode) TC = 90°C 60 A
dv/dt VDS < VDSS; IF £ 300A;ôdiF/dtô£ 100A/µs; RG = 2 W5 V/ns
TVJ = 150°C
EAR TC = 25°C 30 mJ
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon VGS = 10 V; ID = ID90 25 mW
VGSth VDS = 20 V; ID = 4 mA; 2 4 V
IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C 0.3 mA
TVJ = 125°C 0.25 mA
IGSS VGS = ±20 V; VDS = 0 V 200 nA
Qg180 nC
Qgs 35 nC
Qgd 85 nC
td(on) 20 ns
tr60 ns
td(off) 80 ns
tf60 ns
VF(diode) IF = 75 A; VGS = 0 V 1.2 1.5 V
trr (diode) IF = 37.5 A; -di/dt = 100 A/µs; VDS = 25 V 300 ns
RthJC 0.5 K/W
VGS= 10 V; VDS = 0.5 • VDSS; ID = ID90
VGS= 10 V; VDS = 0.5 • VDSS;
ID = ID90; RG = 2 W
© 2000 IXYS All rights reserved 2 - 2
FMM 75-01F
Component
Symbol Conditions Maximum Ratings
TVJ -55...+150 °C
Tstg -55...+125 °C
VISOL IISOL £ 1 mA; 50/60 Hz 2500 V~
FCmounting force with clip 20...120 N
Symbol Conditions Characteristic Values
min. typ. max.
dS,dApin - pin 1.7 mm
dS,dApin - backside metal 5.5 mm
RthCH with heatsink compound 0.15 K/W
Weight 9g
Dimensions in mm (1 mm = 0.0394")
