SFH615AA/AGB/AGR/ABM/ ABL/AY/AB 5.3 kV TRIOS Optocoupler High Reliability FEATURES * Variety of Current Transfer Ratios at 5.0 mA - AA: 50-600% - AGB: 100-600% - AGR: 100-300% - ABM: 200-400% - ABL: 200-600% - AY: 50-150% - AB: 80-260% * Low CTR Degradation * Good CTR Linearity Depending on Forward Current * Isolation Test Voltage, 5300 VRMS * High Collector-emitter Voltage, VCEO=70 V * Low Saturation Voltage * Fast Switching Times * Field-Effect Stable by TRIOS (TRansparent IOn Shield) * Temperature Stable * Low Coupling Capacitance * End-Stackable, .100" (2.54 mm) Spacing * High Common-mode Interference Immunity (Unconnected Base) * Underwriters Lab File #52744 V * VDE 0884 Available with Option 1 D E DESCRIPTION The SFH615XXX features a large assortment of current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm lead spacing. Creepage and clearance distances of >8 mm are achieved with option 6. This version complies with IEC 950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Dimensions in inches (mm) 2 1 pin one ID .255 (6.48) .268 (6.81) Anode 1 4 Collector Cathode 2 3 3 Emitter 4 .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .050 (1.27) typ. .300 (7.62) typ. .130 (3.30) .150 (3.81) 4 typ. .018 (.46) .022 (.56) 10 .020 (.508 ) .035 (.89) .050 (1.27) 3-9 .008 (.20) .012 (.30) .230 (5.84) .250 (6.35) .110 (2.79) .130 (3.30) 0.100 (2.54) Maximum Ratings Emitter Reverse Voltage ................................................................................6.0 V DC Forward Current ........................................................................60 mA Surge Forward Current (tP10 s) ....................................................2.5 A Total Power Dissipation ................................................................100 mW Detector Collector-Emitter Voltage....................................................................70 V Emitter-Collector Voltage...................................................................7.0 V Collector Current.............................................................................50 mA Collector Current (tP1.0 ms)........................................................100 mA Total Power Dissipation ................................................................150 mW Package Isolation Test Voltage between Emitter and Detector, refer to Climate DIN 40046, part 2, Nov. 74 ......................................................................5300 VRMS Creepage ................................................................................... 7.0 mm Clearance................................................................................... 7.0 mm Insulation Thickness between Emitter and Detector.................. 0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0 303, part 1............................................... 175 Isolation Resistance VIO=500 V, TA=25C ................................................................ 1012 VIO=500 V, TA=100C .............................................................. 1011 Storage Temperature Range..............................................-55 to +150C Ambient Temperature Range .............................................-55 to +100C Junction Temperature ..................................................................... 100C Soldering Temperature (max. 10 s. Dip Soldering Distance to Seating Plane 1.5 mm) ........................................... 260C 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-239 March 1, 2001-11 Table 1. Characteristics (TA=25C) Parameter Symbol Value Unit Condition Forward Voltage VF 1.25(1.65) V IF=60 mA Reverse Current IR 0.01(10) A VR=6.0 V Capacitance C0 13 pF VR=0 V, f=1.0 MHz Thermal Resistance RthJA 750 K/W -- Capacitance CCE 5.2 pF VCE=5 V, f=1.0 MHz Thermal Resistance RthJA 500 K/W -- Collector-Emitter Saturation Voltage VCEsat 0.25(0.4) V IF=10 mA, IC=2.5 mA Coupling Capacitance CC 0.4 pF -- Emitter (IR GaAs) Detector (Si Phototransistor) Package Table 2. Current Transfer Ratio (IC/IF at VCE=5.0 V) and Collector-emitter Leakage Current Parameter AA AGB AGR ABM ABL AY AB Unit IC/ IF (IF=5.0 mA) 50-600 100-600 100-300 200-400 200-600 50-150 80-260 % Collector-Emitter Leakage Current, ICEO, VCEO=10 V 10(100) 10(100) 10(100) 10(100) 10(100) 10(100) 10(100) nA Switching Operation (with saturation) IF 1 k VCC=5 V Parameter Symbol Value Unit Condition Turn-on Time ton 2.0 s IF=5.0 mA Turn-off Time toff 25 s 47 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) SFH615AA/AGB/AGR/ABM/ABL/AY/AB 2-240 March 1, 2001-11 Figure 1. Current Transfer Ratio (typical) vs. Temperature IF=10 mA, VCE=0.5 V Figure 4. Output Characteristics (typical). Collector Current vs. Collector-emitter Voltage TA=25C Figure 6. Diode Forward Voltage (typical) vs. Forward Current Figure 2. Transistor Capacitance (typical) vs. Collector-emitter Voltage TA=25C, f=1.0 MHz Figure 5. Permissible Pulse Handling Capability. Forward Current vs. Pulsewidth Pulse cycle D=parameter, TA=25C Figure 7. Permissible Power Dissipation vs. Ambient Temperature 20 pF C 15 10 5 CCE 0 10-2 10-1 10-0 101 V Ve 102 Figure 3. Permissible Diode Forward Current vs. Ambient Temperature 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) SFH615AA/AGB/AGR/ABM/ABL/AY/AB 2-241 March 1, 2001-11