2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–239 March 1, 2001-11
FEATURES
• Variety of Current Transfer Ratios at 5.0 mA
– AA: 50–600%
– AGB: 100–600%
– AGR: 100–300%
– ABM: 200–400%
– ABL: 200–600%
– AY: 50–150%
– AB: 80–260%
• Low CTR Degradation
• Good CTR Linearity Depending on Forward
Current
• Isolation Test Voltage, 5300 V
RMS
• High Collector-emitter Voltage,
V
CEO
=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS (TRansparent IOn
Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100" (2.54 mm) Spacing
• High Common-mode Interference Immunity
(Unconnected Base)
• Underwriters Lab File #52744
• VDE 0884 Available with Option 1
DESCRIPTION
The SFH615XXX features a large assortment of cur-
rent transfer ratio, low coupling capacitance and high
isolation voltage. These couplers have a GaAs infra-
red emitting diode emitter, which is optically coupled
to a silicon planar phototransistor detector, and is
incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of >8 mm are
achieved with option 6. This version complies with IEC
950 (DIN VDE 0805) for reinforced insulation up to an
operation voltage of 400 V
RMS
or DC.
V
DE
Maximum Ratings
Emitter
Reverse Voltage................................................................................6.0 V
DC Forward Current........................................................................60 mA
Surge Forward Current (t
P
≤
10
µ
s) ....................................................2.5 A
Total Power Dissipation................................................................100 mW
Detector
Collector-Emitter Voltage.................................................................... 70 V
Emitter-Collector Voltage................................................................... 7.0 V
Collector Current.............................................................................50 mA
Collector Current (t
P
≤
1.0 ms)........................................................100 mA
Total Power Dissipation................................................................150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74......................................................................5300 V
RMS
Creepage...................................................................................
≥
7.0 mm
Clearance...................................................................................
≥
7.0 mm
Insulation Thickness between Emitter and Detector..................
≥
0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1...............................................
≥
175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C ................................................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C ..............................................................
≥
10
11
Ω
Storage Temperature Range..............................................–55 to +150
°
C
Ambient Temperature Range .............................................–55 to +100
°
C
Junction Temperature ..................................................................... 100
°
C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
≥
1.5 mm) ........................................... 260
°
C
.255 (6.48)
.268 (6.81)
1
2
4
3
.179 (4.55)
.190 (4.83)
pin one ID
.030 (.76)
.045 (1.14)
4°
typ.
0.100 (2.54)
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
10°
3°–9°
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
.050 (1.27)
Dimensions in inches (mm)
1
2
4
3
Anode Collector
Cathode Emitter
SFH615AA/AGB/AGR/ABM/
ABL/AY/AB
5.3 kV TRIOS
Optocoupler
High Reliability
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH615AA/AGB/AGR/ABM/ABL/AY/AB
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–240 March 1, 2001-11
Table 1. Characteristics
(
T
A
=25
°
C)
Table 2. Current Transfer Ratio
(
I
C
/
I
F
at
V
CE
=5.0 V)
and Collector-emitter Leakage Current
Switching Operation
(with saturation)
Parameter Symbol Value Unit Condition
Emitter (IR GaAs)
Forward Voltage
V
F
1.25(
≤
1.65) V
I
F
=60 mA
Reverse Current
I
R
0.01(
≤
10)
µ
A
V
R
=6.0 V
Capacitance
C
0
13 pF
V
R
=0 V, f=1.0 MHz
Thermal Resistance
R
thJA
750 K/W —
Detector (Si Phototransistor)
Capacitance
C
CE
5.2 pF
V
CE
=5 V, f=1.0 MHz
Thermal Resistance
R
thJA
500 K/W —
Package
Collector-Emitter Saturation Voltage
V
CEsat
0.25(
≤
0.4) V
I
F
=10 mA,
I
C
=2.5 mA
Coupling Capacitance C
C
0.4 pF —
Parameter AA AGB AGR ABM ABL AY AB
Unit
I
C
/
I
F
(
I
F
=5.0 mA) 50–600 100–600 100–300 200–400 200–600 50–150 80–260 %
Collector-Emitter Leakage
Current,
I
CEO,
V
CEO
=10 V
10(
≤
100) 10(
≤
100) 10(
≤
100) 10(
≤
100) 10(
≤
100) 10(
≤
100) 10(
≤
100) nA
IF1 kΩ
VCC=5 V
47 Ω
Parameter Symbol Value Unit Condition
Turn-on Time
t
on
2.0
µ
s
I
F
=5.0 mA
Turn-off Time
t
off
25
µ
s
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH615AA/AGB/AGR/ABM/ABL/AY/AB
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–241 March 1, 2001-11
Figure 1. Current Transfer Ratio
(typical) vs. Temperature
I
F
=10 mA,
V
CE
=0.5 V
Figure 2. Transistor Capacitance
(typical) vs. Collector-emitter Voltage
T
A
=25
°
C
, f=1.0 MHz
Figure 3. Permissible Diode Forward
Current vs. Ambient Temperature
20
15
10
0
5
pF
C
10-2 10-1 10-0 101102
V
Ve
CCE
Figure 4. Output Characteristics (typi-
cal). Collector Current vs.
Collector-emitter Voltage
T
A
=25
°
C
Figure 5. Permissible Pulse Handling
Capability. Forward Current vs. Pulse-
width
Pulse cycle D=parameter,
T
A
=25
°
C
Figure 6. Diode Forward Voltage
(typical) vs. Forward Current
Figure 7. Permissible Power Dissipation
vs. Ambient Temperature
