TOSHIBA 2$J315 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L?-z-MOSIV) 2$J315 DCc-DC CONVERTER INDUSTRIAL APPLICATIONS Unit in mm 6.8MAX. % @ 4-Volt Gate Drive | 5.2202 ! 0.6MAK. Low Drain-Source ON Resistance : Rpg (ON) = 0.25 (Typ.) nt e High Forward Transfer Admittance : [Y,| = 3.08 (Typ.) : y @ Low Leakage Current : Ipgg = 100 A (Max.) (Vps = 60 V) werony 3 oeMax. @ Enhancement-Mode : Vth = 0.8~-2.0V 0 f+ 0 (Vps = 10V, Ip = 1 mA) x 3| & 7 MAXIMUM RATINGS (Ta = 25C) ; 1. GATE CHARACTERISTIC SYMBOL | RATING UNIT 2. DRAIN : (HEAT SINK) Drain-Source Voltage Vpss 60 Vv 3. SOURCE 3 Drain-Gate Voltage (Rgg = 20k) VDGR 60 Vv JEDEC _ Gate-Source Voltage Vass +20 Vv EIAJ SC-64 DC Ip 5 Drain Current A TOSHIBA 2-7B1B Pulse Ipp 20 Drain Power Dissipation (Te = 25C)| Pp 20 WwW Channel Temperature Teh 150 C bemax. Storage Temperature Range Tstg 55~150 C ame 3 4 0.8MAX. THERMAL CHARACTERISTICS (sos CHARACTERISTIC SYMBOL | MAX. | UNIT 23,24 -lfoswre Thermal Resistance, Channel to Case Rth(ch-c)| 6-25 | C/W o| 2 Thermal Resistance, Channel to Ambient | Rth(ch-a)| 125 | C/W 12.2 3 al This transistor is an electrostatic sensitive device. Please handle with caution. 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC EIAJ SC-64 TOSHIBA 2-7B2B Weight : 0.36 g 96100 1EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 2000-02-01 1/2TOSHIBA 283315 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Gate Leakage Current Iagss Vag = 16 V, Vps =0V _ _ +10] A Drain Cut-off Current Ipss Vps = -60V, Vag =0V |-100] A Drain-Source Breakdown Voltage V(BR)DSS | Ip = 10mA, Vas = OV 60) 7 Vv Gate Threshold Voltage Vth Vps = -10V, Ip = -1mA | -0.8} 2.0) V . . Vag = -4V, Ip = -2.5A | 0.81 | 0.40 Drain-Source ON Resistance RDS (ON) Oo, Vag = -10V, Ip = -2.5A | | 0.21 | 0.25 Forward Transfer Admittance IY fz] Vps = -10V, Ip = 2.5A 18] 30] Ss Input Capacitance Cigs 500 | = -1 = Reverse Transfer Capacitance Cregg ;ps MHz OV; Vas = OV, _ 90]; pF Output Capacitance Cogs _ 290 | _ Ip = -2.5A Rise Time ty Vas OV Li _ 20 _ 10 V VOUT Turn-on Time ton S RL = _ 30 | Switching Time 2 12.0 ns Fall Time te 30 | VDD = 30V . VIN : ty, te < 5 ns, Turn-off Time toff Duty < 1%, tw = 10 ps 140 |} Total Gate Charge _ (Gate-Source Plus Gate-Drain) Qe DD = lov i 20) Gate-Source Charge Qes I GS ~ BA > 13 | nC Gate-Drain (Miller) Charge Qed D= _ 7| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Continuous Drain Reverse Current IDR _ _ _ -5 A Pulse Drain Reverse Current IDRP | -20 A Diode Forward Voltage VDSF IprR = 5A, Vag =0V 1.5 Vv MARKING J315 ++TYPE UU Lot Number | | [fe Month (Starting from Alphabet A) Year (Last Number of the Christian Era) 2000-02-01 2/2