TIP120, 121, 122, 125, 126, 127
Darlington Transistors
Page 1 30/05/05 V1.0
Features:
••Designed for general-purpose amplifier and low speed switching applications.
••Collector-Emitter sustaining voltage-VCEO(sus) = 60V (Minimum) - TIP120, TIP125
80V (Minimum) - TIP121, TIP126
100V (Minimum) - TIP122, TIP127.
••Collector-Emitter saturation voltage-VCE(sat) = 2.0V (Maximum) at IC= 3.0A.
••Monolithic construction with built-in-base-emitter shunt resistors.
Minimum Maximum
A 14.68 15.31
B 9.78 10.42
C 5.01 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Dimensions : Millimetres
Maximum Ratings
Characteristic Symbol TIP120 TIP121 TIP122 Unit
TIP125 TIP126 TIP127
Collector-Emitter Voltage VCEO 60 80 100 VCollector-Base Voltage VCBO
Emitter-Base Voltage VEBO 5.0
Collector Current -Continuous
-Peak
IC
ICM
5.0
8.0 A
Base Current IB120 mA
Total Power Dissipation at TC= 25°C
Derate above 25°C PD65
0.52
W
W/°C
Operating and Storage Junction
Temperature Range TJ, TSTG -65 to +150 °C
Thermal Characteristics
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 1.92 °C/W
Pin 1. Base
2. Collector
3. Emitter
4. Collector (Case)
NPN PNP
TIP120 TIP 125
TIP121 TIP 126
TIP122 TIP 127
5.0 Ampere
Darlington
Complementary Silicon
Power Transistors
60 - 100 Volts
65 Watts
TO-220
TIP120, 121, 122, 125, 126, 127
Darlington Transistors
Page 2 30/05/05 V1.0
Characteristic Symbol Minimum Maximum Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC= 30mA, IB= 0) TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
VCEO(sus) 60
80
100
- V
Collector Cut off Current
(VCE = 30V, IB= 0) TIP120, TIP125
(VCE = 40V, IB= 0) TIP121, TIP126
(VCE = 50V, IB= 0) TIP122, TIP127
ICEO -0.5
0.5
0.5
mA
Collector Cut off Current
(VCB = 60V, IB= 0) TIP120, TIP125
(VCB = 80V, IB= 0) TIP121, TIP126
(VCB = 100V, IB= 0) TIP122, TIP127
ICBO -0.2
0.2
0.2
Collector Cut off Current
(VEB =5.0V, IC= 0) IEBO - 2.0
ON Characteristics (1)
DC Current Gain
(IC= 0.5A, VCE = 3.0V)
(IC= 3.0A, VCE = 3.0V)
hFE 1000
1000
- -
Collector-Emitter Saturation Voltage
(IC= 3.0A, IB= 12mA)
(IC= 5.0A, IB= 20mA)
VCE(sat) - 2.0
4.0 V
Base-Emitter On Voltage
(IC= 3.0A, VCE = 3.0V) VBE(on) - 2.5
Dynamic Characteristics
Small-Signal Current Gain
(IC= 3.0A, VCE = 4.0V, f = 1.0MHz) hfe 4.0 - -
Output Capacitance
(VCB = 10V, IE= 0, f = 0.1MHz) TIP120, TIP121, TIP122
TIP125, TIP126, TIP127
Cob -300
250 pF
Electrical Characteristics (TC= 25°C unless otherwise noted)
(1) Pulse Test : Pulse Width = 300µs, Duty Cycle ≤2.0%
FIGURE-1 POWER DERATING
TIP120, 121, 122, 125, 126, 127
Darlington Transistors
Page 3 30/05/05 V1.0
FIGURE - 2 SWITCHING TIME
FIGURE - 3 SWITCHING TIME
FIGURE - 4 SMALL SIGNAL CURRENT GAIN FIGURE - 5 CAPACITANCES
TIP120, 121, 122, 125, 126, 127
Darlington Transistors
Page 4 30/05/05 V1.0
There are two limitations on the power handling ability of a transistor:
average junction temperature and second breakdown safe operating
area curves indicate Ic-VCE limits of the transistor that must not be
subjected to greater dissipation than the curves indicate.
The data of Figure - 6 is based on TJ(PK) = 150°C;Tc is variable
depending on power level. Second breakdown pulse limits are valid for
duty cycles to 10% provided TJ(PK) ≤150°C, At high case
temperatures, thermal limitation will reduce the power that can be
handled to values less than the limitations imposed by second
breakdown.
FIGURE - 7 DC CURRENT GAIN
FIGURE - 8 COLLECTOR SATURATION REGION
FIGURE - 6 ACTIVE REGION SAFE OPERATING AREA
TIP120, 121, 122, 125, 126, 127
Darlington Transistors
Page 5 30/05/05 V1.0
IC
A
VCEO
(maximum)
V
hFE
minimum
at Ic= 3A
Ptot at
25°C
W
Package
Part Number
NPN PNP
5
60
1000 65 TO-220
TIP120 TIP125
80 TIP121 TIP126
100 TIP122 TIP127
FIGURE - 9 “ON” VOLTAGES
Specifications
For enquiries from all other markets
TIP120, 121, 122, 125, 126, 127
Darlington Transistors
Page 6 30/05/05 V1.0
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