Silicon Carbide Schottky Diode 650 V, 30 A FFSP3065A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. 1. Cathode 2. Anode Schottky Diode Features * * * * * * * Max Junction Temperature 175C Avalanche Rated 180 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is Pb-Free, Halogen Free/BFR Free and RoHS Compliant 1 2 TO-220-2LD CASE 340BB Applications MARKING DIAGRAM * General Purpose * SMPS, Solar Inverter, UPS * Power Switching Circuits $Y&Z&3&K FFSP 3065A $Y &Z &3 &K FFSP3065A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2016 January, 2020 - Rev. 2 1 Publication Order Number: FFSP3065A/D FFSP3065A ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Parameter Value Unit Peak Repetitive Reverse Voltage 650 V Single Pulse Avalanche Energy (Note 1) 180 mJ Continuous Rectified Forward Current @ TC < 148C 30 A TC = 25C, 10 ms 1125 A TC = 150C, 10 ms 1040 A Symbol VRRM EAS IF IF,Max Non-Repetitive Peak Forward Surge Current IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 150 A IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 75 A PTOT Power Dissipation TC = 25C 240 W TC = 150C 40 W -55 to +175 C TJ, TSTG Operating and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 180 mJ is based on starting TJ = 25C, L = 0.5 mH, IAS = 27 A, V = 50 V. THERMAL CHARACTERISTICS Symbol RqJC Parameter Thermal Resistance, Junction to Case, Max Value Unit 0.62 C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 30 A, TC = 25C - 1.50 1.75 V IF = 30 A, TC = 125C - 1.6 2.0 IF = 30 A, TC = 175C - 1.72 2.4 VR = 650 V, TC = 25C - - 200 VR = 650 V, TC = 125C - - 400 VR = 650 V, TC = 175C - - 600 Total Capacitive Charge V = 400 V - 100 - nC Total Capacitance VR = 1 V, f = 100 kHz - 1705 - pF VR = 200 V, f = 100 kHz - 180 - VR = 400 V, f = 100 kHz - 130 - Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Packing Method Quantity FFSP3065A FFSP3065A TO-220-2LD Tube 50 Units www.onsemi.com 2 FFSP3065A TYPICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) 10-5 30 TJ = 25C 20 IR, Reverse Current (A) IF, Forward Current (A) TJ = 75C TJ = -55C 10 TJ = 175C TJ = 125C 0 0.0 0.5 1.0 1.5 VF, Forward Voltage (V) TJ = 175C 10-6 10-7 TJ = 125C TJ = 75C 10-8 10-9 100 2.0 Figure 1. Forward Characteristics 150 D = 0.2 D = 0.3 D = 0.5 50 D = 0.7 0 25 D=1 50 75 100 125 150 300 400 500 VR, Reverse Voltage (V) 600 650 200 150 100 50 0 175 25 50 75 100 125 150 TC, Case Temperature (5C) TC, Case Temperature (5C) Figure 3. Current Derating Figure 4. Power Derating 140 175 5000 120 100 Capacitance (pF) QC, Capacitive Charge (nC) 200 250 D = 0.1 100 TJ = -55C Figure 2. Reverse Characteristics PTOT, Power Dissipation (W) IF, Peak Forward Current (A) 200 TJ = 25C 80 60 40 1000 100 20 0 0 100 200 300 400 500 10 0.1 600 650 1 10 100 650 VR, Reverse Voltage (V) VR, Reverse Voltage (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSP3065A TYPICAL CHARACTERISTICS (Continued) (TJ = 25C unless otherwise noted) EC, Capacitive Energy (mJ) 30 20 10 0 0 100 200 300 400 500 600 650 VR, Reverse Voltage (V) Figure 7. Capacitance Stored Energy ZqJC, Normalized Thermal Impedance 2 1 D=0.5 PDM D=0.2 0.1 t1 D=0.1 D=0.05 D=0.02 D=0.01 SINGLE PULSE 0.05 10-4 t2 NOTES: ZqJC(t) = r(t) x RqJC RqJC = 0.62C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 10-3 10-2 10-1 1 t, Rectangular Pulse Duration (s) Figure 8. Junction-to-Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD - t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-220-2LD CASE 340BB ISSUE O 4.09 3.50 0.36 M 10.67 9.65 A B A M B 3.43 2.54 7 3 5 3 1 2 8.89 6.86 1.40 0.51 16.51 14.22 9.40 8.38 DATE 31 AUG 2016 6.86 5.84 5 3 16.15 15.75 13.40 12.19 6.35 MAX 0.60 MAX C 14.73 13.60 1.65 1.25 1.91 0.61 0.33 2.54 5.08 2.92 2.03 1.02 0.38 0.36 M 5 3 5 3 4.80 4.30 DOCUMENT NUMBER: DESCRIPTION: 98AON13832G TO-220-2LD C A B NOTES: A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K, VARIATION AC,DATED APRIL 2002. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME Y14.5-2009. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. 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