APT100S20BG - MICROCHIP TECHNOLOGY

1 - Cathode

2 - Anode

Back of Case - Cathode APT100S20B(G) 200V 120A

053-6021 Rev C 7-2006

TO-247

STATIC ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

PRODUCT BENEFITS

•Low Losses

•Low Noise Switching

•Cooler Operation

•Higher Reliability Systems

•Increased System Power

Density

PRODUCT FEATURES

•Ultrafast Recovery Times

•Soft Recovery Characteristics

•Popular TO-247 Package or

Surface Mount D3PAK Package

•Low Forward Voltage

•High Blocking Voltage

•Low Leakage Current

PRODUCT APPLICATIONS

•Parallel Diode

-Switchmode Power Supply

-Inverters

•Free Wheeling Diode

-Motor Controllers

-Converters

•Snubber Diode

•Uninterruptible Power Supply (UPS)

•48 Volt Output Rectifiers

•High Speed Rectifiers

HIGH VOLTAGE SCHOTTKY DIODE

Symbol

IRM

UNIT

Volts

MIN TYP MAX

.89 .95

1.06

.76

470

Forward Voltage

Maximum Reverse Leakage Current

Junction Capacitance, VR = 200V

IF = 100A

IF = 200A

IF = 100A, TJ = 125°C

VR = 200V

VR = 200V, TJ = 125°C

Characteristic / Test Conditions

Maximum D.C. Reverse Voltage

Maximum Peak Repetitive Reverse Voltage

Maximum Working Peak Reverse Voltage

Maximum Average Forward Current 1 (TC = 125°C, Duty Cycle = 0.5)

RMS Forward Current (Square wave, 50% duty) 1

Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)

Operating and StorageTemperature Range

Lead Temperature for 10 Sec.

Avalanche Energy (2A, 50mH)

Symbol

VRRM

VRWM

IF(AV)

IF(RMS)

IFSM

TJ,TSTG

EVAL

UNIT

Volts

Amps

°C

APT100S20B(G)

200

120

318

1000

-55 to 150

300

100

Microsemi Website - http://www.microsemi.com

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

DYNAMIC CHARACTERISTICS APT100S20B(G)

053-6021 Rev C 7-2006

THERMAL AND MECHANICAL CHARACTERISTICS

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

1 Countinous current limited by package lead temperature.

MIN TYP MAX

-70

- 230

-6-

- 110

- 690

-11-

-95

- 1750

-32

UNIT

Amps

Characteristic

Reverse Recovery Time

Reverse Recovery Charge

Maximum Reverse Recovery Current

Reverse Recovery Time

Reverse Recovery Charge

Maximum Reverse Recovery Current

Reverse Recovery Time

Reverse Recovery Charge

Maximum Reverse Recovery Current

Symbol

trr

Qrr

IRRM

trr

Qrr

IRRM

trr

Qrr

IRRM

Test Conditions

IF = 100A, diF/dt = -200A/µs

VR = 133V, TC = 25°C

IF = 100A, diF/dt = -200A/µs

VR = 133V, TC = 125°C

IF = 100A, diF/dt = -700A/µs

VR = 133V, TC = 125°C

ZθJC, THERMAL IMPEDANCE (°C/W)

10-5 10-4 10-3 10-2 10-1 1.0

RECTANGULAR PULSE DURATION (seconds)

FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION

0.20

0.18

0.16

0.14

0.12

0.10

0.08

0.06

0.04

0.02

Note:

Duty Factor D = t1/t2

Peak TJ = PDM x ZθJC + TC

PDM

0.5

SINGLE PULSE

0.1

0.3

0.7

0.05

FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL

Characteristic / Test Conditions

Junction-to-Case Thermal Resistance

Package Weight

Maximum Mounting Torque

Symbol

RθJC

Torque

MIN TYP MAX

.18

0.22

5.9

1.1

UNIT

°C/W

lb•in

N•m

0.00817 0.0174 0.0593

0.00514 0.00242 0.0158

Dissipated Power

(Watts)

(C) T

(C)

EXT

are the external thermal

impedances: Case to sink,

sink to ambient, etc. Set to

zero when modeling only

the case to junction.

EXT

0.095

0.384

D = 0.9

053-6021 Rev C 7-2006

APT100S20B(G)

TYPICAL PERFORMANCE CURVES

Duty cycle = 0.5

TJ= 150°C

Lead Temperature

Limited

TJ= 125°C

VR= 133V

50A

100A 130A

trr

Qrr

trr

IRRM

Qrr, REVERSE RECOVERY CHARGE IF, FORWARD CURRENT

(nC) (A)

IRRM, REVERSE RECOVERY CURRENT trr, REVERSE RECOVERY TIME

(A) (ns)

TJ = -55°C

TJ = 25°C

TJ = 125°C

TJ = 150°C

130A

100A

50A

0 0.5 1.0 1.5 0 200 400 600 800

0 200 400 600 800 0 200 400 600 800

360

300

240

180

120

2500

2000

1500

1000

500

TJ= 125°C

VR= 133V

100A

50A

130A

TJ= 125°C

VR= 133V

120

100

VF, ANODE-TO-CATHODE VOLTAGE (V) -diF/dt, CURRENT RATE OF CHANGE(A/µs)

Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change

-diF/dt, CURRENT RATE OF CHANGE (A/µs) -diF/dt, CURRENT RATE OF CHANGE (A/µs)

Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change

TJ, JUNCTION TEMPERATURE (°C) Case Temperature (°C)

Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature

VR, REVERSE VOLTAGE (V) Time in Avalanche (µs)

Figure 8. Junction Capacitance vs. Reverse Voltage Figure 9. Single Pulse UIS SOA

1.2

1.0

0.8

0.6

0.4

0.2

0.0

6000

5000

4000

3000

2000

1000

025 50 75 100 125 150 25 50 75 100 125 150

1 10 100 200 1 10 100 1000 2500

400

300

200

100

200

100

CJ, JUNCTION CAPACITANCE Kf, DYNAMIC PARAMETERS

(pF) (Normalized to 700A/µs)

PEAK AVALANCHE CURRENT IF(AV) (A)

(A)

APT100S20B(G)

053-6021 Rev C 7-2006

Zero

diF/dt - Rate of Diode Current Change Through Zero Crossing.

IF - Forward Conduction Current

IRRM - Maximum Reverse Recovery Current.

trr - Reverse

ecovery Time, measured from zero crossing where

diode

Qrr - Area Under the Curve Defined by IRRM and trr.

current goes from positive to negative, to the point at which the straight

line through I

RRM

and 0.25 I

RRM

passes through zero.

Figure 9. Diode Test Circuit

Figure 10, Diode Reverse Recovery Waveform and Definitions

0.25 IRRM

PEARSON 2878

CURRENT

TRANSFORMER

diF/dt Adjust

30µH

D.U.T.

+18V

trr/Qrr

Waveform

APT20M20LLL

TO-247 Package Outline

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

20.80 (.819)

21.46 (.845)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

10.90 (.430) BSC

3.50 (.138)

3.81 (.150)

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

2.21 (.087)

2.59 (.102)

0.40 (.016)

0.79 (.031)

Dimensions in Millimeters and (Inches)

Cathode

Anode

Cathode

e1 SAC: Tin, Silver, Copper