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VTP Process Photodiodes
VTP PROCESS
FAST RESPONSE, HIGH DARK RESISTAN CE
FEATURES
• Visible to enhanced IR spectral range
• Integral visible rejection filters availab le
• R espons e @ 940 nm, 0.60 A/W, ty pical
• -1 to 2% linearity over 7 to 9 decades
• Low dark currents
• High shunt resistance
• High reverse voltage rating
• Low capacitance
PRO DUCT DESCR IPTION
Photodiodes in this series have been designed for low junction
ca pa ci tance. The l ow er t he capaci t an ce, th e f aster the r e sponse
of the diode. Also, speed can be further increased by reverse
b i asing the diodes wh i ch lo wers th e capacita nce eve n m ore .
These diodes have exc ell ent response in t he IR region and are
well matched to IR LEDs. Respo nsivit y is cate gor i zed at 940 nm
(GaAs LED). Some diodes are available in packages which
incorporate a visible rejection filter effectively blocking any light
below 700 nm.
Diodes made with the VTP process are suitable for operation
under reverse bias conditions but may be used in the
photovoltaic mode. Typical reverse breakdown voltages are
around 140 V. Low dar k cur rents under rever se bias are also a
feature of this series.
