1 repent Mem ERA ERIE rE te | SAMSUNG -SEMICONDUCTCR . INC. MPS6517 . AMPLIFIER TRANSISTOR * Collector-Emitter Voltage: Veeco =40V Collector Dissipation: P. (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25C) ue D J eaesiue 0007324 & i PNP EPITAXIAL SILICON TRANSISTOR T-29-21 Characteristic Symbol Rating . Unit Collector-Emitter Voltage Vceo 40 Vv Collector-Base Voltage Veceo 40 Vv Emitter-Base Voitage Veeo 4 Vv Collector Current Ic 100 mA Collector Dissipation | Po 625 mw Junction Temperature . Tj 150 C Storage Temperature Tetg -5-150| C * Refer to 2N3906 for graphs ELECTRICAL CHARACTERISTICS (Ta=25C) TO-92 1, Emitter 2. Base 3. Collector Characteristic Symbol Test Conditions Mina Tye Max Unit Collector-Emitter Breakdown Voltage BVceo Io =500pA, fg =0 40 Vv Emitter-Base Breakdown Voltage BVeso le =10pA, Ig =0 4 Vv Collector Cut-off Current Icno Va =30V, le =0 50 nA DC Current Gain Nee Ig =2MA, Voge = 10V 90 180 ale =100mA, Vee =10V 60 Collector-Emitter Saturation voltage Vee (sat) Ig =50mA, la=SmA 0.5 Vv Output Capacitance Cob Vp =10V, le =O 3.5 pF . f=100KHz Pulse Test: Pulse Width < 300ps, Duty Cycle<2% 594 cf SAMSUNG SEMICONDUCTOR