NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 309 SFH 309 FA SFH 309 SFH 309 FA Wesentliche Merkmale Features * Speziell geeignet fur Anwendungen im Bereich von 380 nm bis 1180 nm (SFH 309) und bei 880 nm (SFH 309 FA) * Hohe Linearitat * 3 mm-Plastikbauform im LED-Gehause * Gruppiert lieferbar * Especially suitable for applications from 380 nm to 1180 nm (SFH 309) and of 880 nm (SFH 309 FA) * High linearity * 3 mm LED plastic package * Available in groups Anwendungen Applications * Lichtschranken fur Gleich- und Wechsellichtbetrieb * Industrieelektronik * Messen/Steuern/Regeln" * Photointerrupters * Industrial electronics * For control and drive circuits Typ Type Bestellnummer Ordering Code Typ Type Bestellnummer Ordering Codes SFH 309 Q62702P0859 SFH 309 FA Q62702-P0941 SFH 309-3/4 Q62702P3592 SFH 309 FA-3/4 Q62702-P3590 SFH 309-4 Q62702P0998 SFH 309 FA-4 Q62702-P0178 SFH 309-4/5 Q62702P3593 SFH 309 FA-4/5 Q62702-P3591 SFH 309-5 Q62702P0999 SFH 309 FA-5 Q62702-P0180 SFH 309-5/6 Q62702P3594 SFH 309 FA-5/6 Q62702-P5199 2007-04-02 1 SFH 309, SFH 309 FA Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 100 C Kollektor-Emitterspannung Collector-emitter voltage VCE 35 V Kollektorstrom Collector current IC 15 mA Kollektorspitzenstrom, < 10 s Collector surge current ICS 75 mA Verlustleistung, TA = 25 C Total power dissipation Ptot 165 mW Warmewiderstand Thermal resistance RthJA 450 K/W 2007-04-02 2 SFH 309, SFH 309 FA Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value SFH 309 SFH 309 FA Einheit Unit Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 860 900 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 380 ... 1150 730 ... 1120 nm 0.038 0.038 mm2 Bestrahlungsempfindliche Flache ( 220 m) A Radiant sensitive area Abmessungen der Chipflache Dimensions of chip area LxB LxW 0.45 x 0.45 0.45 x 0.45 mm x mm Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface H 2.4 ... 2.8 2.4 ... 2.8 mm Halbwinkel Half angle 12 12 Grad deg. Kapazitat, VCE = 0 V, f = 1 MHz, E = 0 Capacitance CCE 5.0 5.0 pF Dunkelstrom Dark current VCE = 25 V, E = 0 ICEO 1 ( 200) 1 ( 200) nA 2007-04-02 3 SFH 309, SFH 309 FA Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V SFH 309: Ev = 1000 Ix, Normlicht/ standard light A, VCE = 5 V Symbol Symbol IPCE IPCE Anstiegszeit/Abfallzeit tr , t f Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-EmitterSattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.5 mW/cm2 VCEsat Wert Value -2 -3 -4 -5 -6 0.4 ... 0.8 1.5 0.63 ... 1.25 2.8 1.0 ... 2.0 4.5 1.6 ... 3.2 7.2 2.5 ... 5.0 11.2 mA 5 6 7 8 9 s 200 200 200 200 200 mV 1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. 1) IPCEmin is the min. photocurrent of the specified group. Directional Characteristics Srel = f () 2007-04-02 Einheit Unit 4 mA SFH 309, SFH 309 FA Relative Spectral Sensitivity, SFH 309 Srel = f () Relative Spectral Sensitivity, SFH 309 FA Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V Photocurrent IPCE = f (VCE), Ee = Parameter Dark Current ICEO = f (VCE), E = 0 OHF01121 100 S rel % 80 60 40 20 0 400 600 800 1000 nm 1200 Total Power Dissipation Ptot = f (TA) OHF01527 10 1 nA CEO 10 0 10 -1 10 -2 10 -3 Dark Current ICEO = f (TA), VCE = 25 V, E = 0 OHF01530 10 3 nA CEO Capacitance CCE = f (VCE), f = 1 MHz, E = 0 5 10 15 20 25 30 V 35 V CE Photocurrent IPCE/IPCE25 = f (TA), VCE = 5 V OHF01528 5.0 0 PCE OHF01524 1.6 PCE 25 C CE pF 1.4 4.0 10 2 1.2 3.5 10 1 3.0 1.0 2.5 0.8 2.0 0.6 1.5 10 0 0.4 1.0 0.2 0.5 10 -1 -25 0 2007-04-02 25 50 75 C 100 TA 0 10 -2 10 -1 10 0 5 10 1 V 10 2 V CE 0 -25 0 25 50 75 C 100 TA SFH 309, SFH 309 FA Mazeichnung Package Outlines Collector (Transistor) Cathode (Diode) o3.1 (0.122) o2.9 (0.114) 0.7 (0.028) 0.4 (0.016) 0.8 (0.031) 0.4 (0.016) 2.54 (0.100) spacing Area not flat 5.2 (0.205) 4.5 (0.177) 4.1 (0.161) 3.9 (0.154) 4.0 (0.157) 3.6 (0.142) 3.5 (0.138) 1.8 (0.071) 1.2 (0.047) 29 (1.142) 27 (1.063) 0.6 (0.024) 0.4 (0.016) Chip position 6.3 (0.248) 5.9 (0.232) GEOY6653 Mae in mm (inch) / Dimensions in mm (inch). 2007-04-02 6 SFH 309, SFH 309 FA Lotbedingungen Soldering Conditions Wellenloten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling 0 0 50 100 150 200 s 250 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-02 7